公开(公告)号：US20130079552A1

公开(公告)日：2013-03-28

申请号：US13638407

申请日：2010-09-01

Applicant: Hyo Young Lee ,  In Kyu Moon ,  Jung Hyun Lee

Inventor： Hyo Young Lee ,  In Kyu Moon ,  Jung Hyun Lee

IPC: C09K3/00 ,  C01B31/04

CPC classification number: C09K3/00 ,  B01D69/08 ,  B01D71/021 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/192 ,  H01G9/042 ,  H01M4/48 ,  Y10S977/847

Abstract: The present invention relates to a novel graphene oxide reducing agent and a method for manufacturing a reduced graphene oxide from graphene oxide using same. More particularly, in the present invention, the reduced graphene oxide is manufactured by reducing a graphene oxide using a reducing agent containing a halogen element, and is applicable as an electric conductor, a semiconductor, and an insulator in various fields.

Abstract translation: 本发明涉及一种新颖的氧化石墨烯氧化物还原剂及其使用氧化石墨烯氧化物的方法。 更具体地，在本发明中，通过使用含有卤素元素的还原剂还原石墨烯氧化物来制造还原型石墨烯氧化物，并且可用作各种领域的导电体，半导体和绝缘体。

公开(公告)号：US20130014694A1

公开(公告)日：2013-01-17

申请号：US13547710

申请日：2012-07-12

Applicant: Jong Sun MAENG ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Ki Sung KIM

Inventor： Jong Sun MAENG ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Ki Sung KIM

IPC: C30B25/14 ,  C30B25/10 ,  C30B25/02

CPC classification number: H01L21/0262 ,  C30B25/14 ,  C30B29/406 ,  H01L21/0254

Abstract: A method of growing a semiconductor epitaxial thin film and a method of fabricating a semiconductor light emitting device using the same are provided. The method of growing a semiconductor epitaxial thin film, includes: disposing a plurality of wafers loaded in a wafer holder in a reaction chamber; and jetting a reactive gas including a chlorine organic metal compound to the wafers through a gas supply unit provided to extend in a direction in which the wafers are loaded, to grow a semiconductor epitaxial thin film on a surface of each of the wafers.

Abstract translation: 提供一种生长半导体外延薄膜的方法和使用其制造半导体发光器件的方法。 生长半导体外延薄膜的方法包括：将装载在晶片保持器中的多个晶片布置在反应室中; 并且通过设置成在晶片被加载的方向上延伸的气体供给单元将包括氯有机金属化合物的反应气体喷射到晶片，以在每个晶片的表面上生长半导体外延薄膜。

公开(公告)号：US08257953B2

公开(公告)日：2012-09-04

申请号：US12089587

申请日：2006-10-02

Applicant: Jung Hyun Lee ,  Suk Tae Kwon ,  Sung Gyun Kang ,  Sang Jin Kim ,  Jung Ho Hyun ,  Kae Kyoung Kwon ,  Yun Jae Kim ,  Hyun Sook Lee ,  Seung Seob Bae ,  Ki Hoon Nam ,  Jae Kyu Lim ,  Jung Ho Jeon ,  Sung Hyun Yang

Inventor： Jung Hyun Lee ,  Suk Tae Kwon ,  Sung Gyun Kang ,  Sang Jin Kim ,  Jung Ho Hyun ,  Kae Kyoung Kwon ,  Yun Jae Kim ,  Hyun Sook Lee ,  Seung Seob Bae ,  Ki Hoon Nam ,  Jae Kyu Lim ,  Jung Ho Jeon ,  Sung Hyun Yang

IPC: C12N9/12 ,  C12N15/11

CPC classification number: C12N9/1252

Abstract: The present invention relates to a hyperthermophilic DNA polymerase and a preparation method thereof. The invention provides a novel hyperthermophilic DNA polymerase isolated from a Thermococcus sp. strain, a functional equivalent thereof, a protein having the amino acid sequence thereof, and a preparation method thereof. The DNA polymerase according to the invention is a DNA polymerase, which is hyperthermophilic and has an elongation ability and fidelity higher than those of prior commercial DNA polymerases. Thus, the DNA polymerase according to the invention will be useful in precision analysis, precision diagnosis, identification and the like, which require accurate PCR.

Abstract translation: 本发明涉及一种超嗜热DNA聚合酶及其制备方法。 本发明提供了从Thermococcus sp。分离的新型超嗜热DNA聚合酶。 菌株，其功能等同物，具有其氨基酸序列的蛋白质及其制备方法。 根据本发明的DNA聚合酶是DNA聚合酶，其是超嗜热的，并且具有比以前的商业DNA聚合酶更高的伸长能力和保真度。 因此，根据本发明的DNA聚合酶可用于需要精确PCR的精密分析，精确诊断，鉴定等。

公开(公告)号：US08106394B2

公开(公告)日：2012-01-31

申请号：US12314835

申请日：2008-12-17

Applicant: Jung-hyun Lee ,  Sang-jun Choi ,  Hyung-jin Bae

Inventor： Jung-hyun Lee ,  Sang-jun Choi ,  Hyung-jin Bae

IPC: H01L29/68

CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/16

Abstract: A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a storage node connected to the switching structure. The storage node includes a lower electrode, a first layer, a second layer, and an upper electrode that may be sequentially stacked. The first layer may be formed on the lower electrode and includes at least one of oxygen (O), sulfur (S), selenium (Se), tellurium (Te) and combinations thereof. The second layer may be formed on the first layer and includes at least one of copper (Cu), silver (Ag) and combinations thereof. The second layer may be formed of a material having an oxidizing power less than that of the first layer. The upper electrode may be formed on the second layer.

Abstract translation: 提供了多层存储节点，电阻随机存取存储器件及其制造方法。 电阻式随机存取存储器件包括连接到开关结构的开关结构和存储节点。 存储节点包括可以顺序堆叠的下电极，第一层，第二层和上电极。 第一层可以形成在下电极上，并且包括氧（O），硫（S），硒（Se），碲（Te）及其组合中的至少一种。 第二层可以形成在第一层上，并且包括铜（Cu），银（Ag）及其组合中的至少一种。 第二层可以由具有小于第一层的氧化能力的材料形成。 上电极可以形成在第二层上。

公开(公告)号：US08035095B2

公开(公告)日：2011-10-11

申请号：US12007013

申请日：2008-01-04

Applicant: Jung-hyun Lee ,  Myoung-jae Lee

Inventor： Jung-hyun Lee ,  Myoung-jae Lee

IPC: H01L45/00

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  G11C2213/79

Abstract: Provided is a resistive random access memory device that includes a storage node connected to a switching device. The resistive random access memory device includes a first electrode, a resistance variable layer, and a second electrode which are sequentially stacked, wherein a diffusion blocking layer is formed between the first electrode and the resistance variable layer or between the resistance variable layer or/and the second electrode.

Abstract translation: 提供了一种电阻随机存取存储器件，其包括连接到开关器件的存储节点。 电阻式随机存取存储器件包括依次堆叠的第一电极，电阻变化层和第二电极，其中在第一电极和电阻变化层之间或电阻变化层之间或/或电阻变化层之间形成扩散阻挡层 第二电极。

公开(公告)号：US08026329B2

公开(公告)日：2011-09-27

申请号：US12483318

申请日：2009-06-12

Applicant: Young Hee Kim ,  Soo Ryong Kim ,  Woo Teck Kwon ,  Jung Hyun Lee

Inventor： Young Hee Kim ,  Soo Ryong Kim ,  Woo Teck Kwon ,  Jung Hyun Lee

IPC: C08G77/12

CPC classification number: C08G77/60 ,  C08G77/12

Abstract: Provided are polycarbosilane and a method of producing the same. The polycarbosilane contains an allyl group, and thus can be cured by UV absorption when not exposed to the air.

Abstract translation: 提供聚碳硅烷及其制备方法。 聚碳硅烷含有烯丙基，因此当不暴露于空气时，可通过紫外线吸收而固化。

公开(公告)号：US20110204461A1

公开(公告)日：2011-08-25

申请号：US12923273

申请日：2010-09-13

Applicant: Jung-hyun Lee

Inventor： Jung-hyun Lee

IPC: H01L31/0232

CPC classification number: H01L27/14647 ,  H01L27/14621

Abstract: Example embodiments are directed to a stack-type image sensor including resistance change elements. The stack-type image sensor includes at least two light-sensing layers that detect different color light stacked on different layers. The stack-type image sensor may not require a size of a unit pixel that detects a light color to be less than 1 μm in order to generate a high resolution color image. As such, resolution saturation may be avoided.

Abstract translation: 示例性实施例涉及包括电阻变化元件的堆叠型图像传感器。 堆叠型图像传感器包括至少两个检测层叠在不同层上的不同颜色光的感光层。 为了生成高分辨率彩色图像，堆叠型图像传感器可能不需要检测光颜色小于1μm的单位像素的尺寸。 因此，可以避免分辨率饱和。

公开(公告)号：USD643389S1

公开(公告)日：2011-08-16

申请号：US29373050

申请日：2011-02-23

Applicant: Jung-Hyun Lee ,  Jun-Ho Yang

Designer： Jung-Hyun Lee ,  Jun-Ho Yang

公开(公告)号：US07875525B2

公开(公告)日：2011-01-25

申请号：US12289966

申请日：2008-11-07

Applicant: Jung-hyun Lee ,  Hion-suck Baik ,  Soon-ho Kim ,  Jae-young Choi

Inventor： Jung-hyun Lee ,  Hion-suck Baik ,  Soon-ho Kim ,  Jae-young Choi

IPC: H01L21/20

CPC classification number: H01L28/65 ,  H01L27/10852 ,  H01L28/75 ,  H01L28/91

Abstract: A stack-type capacitor includes a lower electrode, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, wherein the lower electrode includes a first metal layer having a cylindrical shape and a second metal layer filled in the first metal layer. In the capacitor, an amount of oxygen included in the lower electrode is decreased to suppress oxidation of a TiN layer. Thus, a stable stack-type capacitor may be formed, which increases greatly the performance of highly integrated DRAMs.

Abstract translation: 堆叠型电容器包括下电极，形成在下电极上的电介质层和形成在电介质层上的上电极，其中下电极包括具有圆柱形状的第一金属层和填充在第二金属层中的第二金属层 第一金属层。 在电容器中，下部电极中包含的氧的量减少以抑制TiN层的氧化。 因此，可以形成稳定的堆叠型电容器，这大大增加了高度集成的DRAM的性能。

公开(公告)号：US20100300119A1

公开(公告)日：2010-12-02

申请号：US12649939

申请日：2009-12-30

Applicant: Je Heon JUNG ,  Jung Hyun LEE ,  Woon Sik KWON ,  Heui Joo PARK ,  Chi Hwan LEE ,  Yeong Chun KIM

Inventor： Je Heon JUNG ,  Jung Hyun LEE ,  Woon Sik KWON ,  Heui Joo PARK ,  Chi Hwan LEE ,  Yeong Chun KIM

IPC: F04B15/06 ,  F04D29/52 ,  F04D29/66 ,  F04B19/06 ,  F17C13/00

CPC classification number: F04B15/06 ,  F04B19/06 ,  F04B37/14 ,  F04D1/00 ,  F04D5/002 ,  F04D7/02 ,  F04D9/001 ,  F04D9/002 ,  F04D9/003 ,  F04D13/024 ,  F04D27/0207 ,  F04D27/0215 ,  F04D27/023 ,  F04D29/406

Abstract: A pump for supplying a cryogenic liquid coolant in accordance with the present invention includes: a housing having an inlet port for introducing a cryogenic liquid coolant, an outlet port for discharging the cryogenic liquid coolant introduced through the inlet port, and a chamber for connecting the inlet port and the outlet port; an impeller rotatably retained in the housing for introducing the cryogenic liquid coolant through the inlet port and discharging the same through the outlet port; and a vapor exhausting part provided in the housing for exhausting vapor generated from the cryogenic liquid coolant.

Abstract translation: 根据本发明的用于供应低温液体冷却剂的泵包括：壳体，其具有用于引入低温液体冷却剂的入口端口，用于排出通过入口端口引入的低温液体冷却剂的出口，以及用于将 入口和出口; 可旋转地保持在壳体中的叶轮，用于将低温液体冷却剂引入入口并将其通过出口排出; 以及设置在壳体中以排出由低温液体冷却剂产生的蒸汽的蒸汽排出部分。