公开(公告)号：US20200292131A1

公开(公告)日：2020-09-17

申请号：US16748854

申请日：2020-01-22

Applicant: KCTECH CO., LTD.

Inventor： Dong Min Kim

IPC: F17C7/00 ,  H05B1/02 ,  H01L21/67

Abstract: The present invention relates to a fluid supply apparatus, that is, a fluid supply apparatus configured to supply a fluid having a predetermined temperature to a chamber. The fluid supply apparatus according to the present invention includes a supply line through which a fluid to be supplied to a chamber flows, at least one bypass line which branches off from a first branch portion of the supply line and connected to a second branch portion of the supply line, and a heater configured to heat the fluid flowing through the bypass line.

公开(公告)号：US20200157382A1

公开(公告)日：2020-05-21

申请号：US16323514

申请日：2017-06-16

Applicant: KCTECH CO.,LTD.

Inventor： Han Teo PARK ,  Hyun Goo KONG ,  Sang Mi LEE

IPC: C09G1/02 ,  C09K3/14

Abstract: The present invention relates to a slurry composition for polishing a tungsten barrier layer. A slurry composition for polishing a tungsten barrier layer according to an embodiment of the present invention comprises abrasive grains and a sulfur-containing amino acid, and can improve edge over erosion (EOE).

公开(公告)号：US20200002573A1

公开(公告)日：2020-01-02

申请号：US16426906

申请日：2019-05-30

Applicant: KCTECH CO., LTD.

Inventor： Hyungoo Kong ,  Jinsook Hwang ,  Sangmi Lee ,  Inseol Hwang ,  Nara Shin

IPC: C09G1/02

Abstract: Provided is a polishing slurry composition including colloidal silica abrasive particles, a metal oxide monomolecular complexing agent, an oxidizer, and a pH adjusting agent, a water-soluble polymer, or both.

公开(公告)号：US20250002755A1

公开(公告)日：2025-01-02

申请号：US18684241

申请日：2022-08-08

Applicant: KCTECH CO., LTD.

Inventor： Jin Sook HWANG ,  Hyun Goo KONG ,  Yun Su KIM

IPC: C09G1/02 ,  C09K3/14

Abstract: The present invention relates to a slurry composition for metal polishing, comprising: colloidal silica; and an oxidizing agent; and at least one selected from among a polishing catalyst, a metal polishing enhancer, a polishing inhibitor, and a dishing and erosion reducer, wherein the colloidal silica has a particle size distribution of colloidal silica according to equation 1.

公开(公告)号：US20240066657A1

公开(公告)日：2024-02-29

申请号：US18140977

申请日：2023-04-28

Applicant: KCTECH CO., LTD.

Inventor： Ji Hoon SON ,  Jeong Heon HAN ,  Ki Hyuk YANG

IPC: B24B37/005 ,  G01B11/06 ,  G01N21/31 ,  G06N3/08

CPC classification number: B24B37/005 ,  G01B11/06 ,  G01N21/31 ,  G06N3/08

Abstract: Provided are a control method, a control apparatus, a training method, and a training apparatus based on thickness estimation of a wafer substrate. The training method includes generating a training spectrum signal according to a thickness of a wafer substrate using an optical model, generating a training spectrum signal having a noise by applying a noise based on a noise parameter to the training spectrum signal, calculating a similarity between the training spectrum signal having the noise and an actually measured spectrum signal, and when the similarity satisfies a set condition, training a noise reduction model using the training spectrum signal having the noise.

公开(公告)号：US20230212429A1

公开(公告)日：2023-07-06

申请号：US18088607

申请日：2022-12-25

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  In Seol HWANG ,  Hyun Goo KONG

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided is a slurry composition for a metal film for a contact process. A polishing slurry composition includes abrasive particles, a compound including one or more functional groups capable of hydrogen bonding, a nonionic polymer including one or more hydrophilic functional groups in a repeating unit structure, and an oxidizer.

公开(公告)号：US11592342B2

公开(公告)日：2023-02-28

申请号：US16823705

申请日：2020-03-19

Applicant: KCTECH CO., LTD.

Inventor： Jae Won Lee ,  Ju Young Lee ,  Kyung Cheol Jeong ,  Jun Ho Lee ,  Yong Guk Park

IPC: G01K13/02 ,  G01K1/14 ,  G01K1/143

Abstract: Disclosed is a temperature detection device. The device for detecting temperature of a processing liquid for substrate processing according to an embodiment includes a temperature measurement sensor installed adjacent to an outer surface of a tube through which the processing liquid flows, in which the temperature measurement sensor senses the temperature of the processing liquid in the tube.

公开(公告)号：US11332641B2

公开(公告)日：2022-05-17

申请号：US17123115

申请日：2020-12-16

Applicant: KCTECH CO., LTD.

Inventor： Gi Joo Shin ,  Jung Yoon Kim ,  Kwang Soo Park ,  Soo Wan Choi

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105

Abstract: A polishing slurry composition enabling implementation of multi-selectivity is provided. The polishing slurry composition includes: a polishing liquid including abrasive particles; and an additive liquid, in which the additive liquid includes a polymer having an amide bond, and a cationic polymer.

公开(公告)号：US20220119679A1

公开(公告)日：2022-04-21

申请号：US17418546

申请日：2019-11-18

Applicant: KCTECH CO., LTD.

Inventor： Jae Woo LEE ,  Ji Hye KIM ,  Bo Hyeok CHOI

IPC: C09G1/02 ,  H01L21/321

Abstract: The present disclosure relates to a CMP slurry composition for polishing polycrystalline silicon and a polishing method using the same. A CMP slurry composition for polishing polycrystalline silicon according to an embodiment of the present disclosure includes: abrasive particles; a surface roughness reducing agent; a polishing regulator containing an organic acid; and a pH regulator.

公开(公告)号：US20220064489A1

公开(公告)日：2022-03-03

申请号：US17415705

申请日：2019-07-03

Applicant: KCTECH CO., LTD.

Inventor： Soo Wan CHOI ,  Jung Yoon KIM ,  Nak Hyun CHOI ,  Hae Won YANG

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  C09G1/04

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises a polishing solution containing polishing particles; and an additive solution containing a non-ionic polymer and a polishing selectivity controller. The polishing slurry composition of the present disclosure has a high polishing rate for silicon oxide films and polysilicon films, leaves no residues after shallow trench isolation (STI) polishing of semiconductor devices, and can reduce the amount of silicon oxide film dishing and decrease scratches.