Abstract:
A memory system uses multiple pulse amplitude modulation (multi-PAM) output drivers and receivers to send and receive multi-PAM signals. A multi-PAM signal has more than two voltage levels, with each data interval now transmitting a “symbol” at one of the valid voltage levels. In one embodiment, a symbol represents two or more bits. The multi-PAM output driver drives an output symbol onto a signal line. The output symbol represents at least two bits that include a most significant bit (MSB) and a least significant bit (LSB). The multi-PAM receiver receives the output symbol from the signal line and determines the MSB and the LSB.
Abstract:
A system and an integrated circuit device therefor. The integrated circuit device comprises output driver circuitry to output data onto a first external signal line. The output driver circuitry outputs a first portion of data in response to a rising edge transition of a first external clock signal. The output driver circuitry outputs a second portion of data in response to a falling edge transition of the first external clock signal. The integrated circuit device may further include input receiver circuitry to sample data from a second external signal line. The input receiver circuitry samples a first portion of data in response to a rising edge transition of a second external clock signal. The input receiver circuitry samples a second portion of data in response to a falling edge transition of the second external clock signal.
Abstract:
A method of operation of a memory controller device, the method of operation comprises issuing a write request to a memory device synchronously with respect to an external clock signal, wherein in response to the write request, a memory device inputs first and second portions of data. The method of operation further includes outputting the first portion of data synchronously with respect to a first edge transition of an external clock signal; and outputting the second portion of data from the bus synchronously with respect to a second edge transition of the external clock signal. The first and second edge transitions of the external clock signal are of transitions of the same clock cycle.
Abstract:
A method of operation of a memory device. The memory device including a section of memory having a plurality of memory cells. The method of operation comprises receiving a request for a write operation and sampling a first portion of data after a delay time transpires in response to the request for a write operation. A method of controlling the memory device comprises issuing a request for a write operation to the memory device. The memory device samples data after a number of clock cycles of the external clock signal transpire in response to the request. The method of controlling also comprises issuing a first portion of data to the memory device after the number of clock cycles of the external clock signal transpire.
Abstract:
A memory system having a master device and a plurality of memory subsystems, including first and second memory subsystems coupled to a first bus. Each memory subsystem includes a plurality of memory devices. The master device transmits a request for a read operation onto the first bus to access data from at least one memory device included in at least one memory subsystem. The first and second memory subsystems each include a transceiver device, a bus, and first and second memory devices. Each transceiver device connects to the first bus. The bus of each memory subsystem connects to each respective transceiver device, wherein each transceiver device is coupled between the first bus and each respective memory subsystem bus. The first and second memory devices in each memory subsystem are coupled respective transceiver devices via respective buses.
Abstract:
A method of controlling a memory device. The method includes providing first block size information to the memory device, wherein the first block size information defines a first amount of data to be input by the memory device in response to a write request. A first portion of the first amount of data is provided to the memory device synchronously with respect to a first transition of an external clock signal. A second portion of the first amount of data is provided to the memory device synchronously with respect to a second transition of the external clock signal. The method further includes issuing a write request to the memory device, wherein in response to the write request the memory device inputs the first amount of data corresponding to the first block size information.
Abstract:
A synchronous memory device having a plurality of memory cells and a method of operation thereof. The memory device comprising: receiver circuitry to receive a first external clock signal; and output driver circuitry, to output data after a preprogrammed number of clock cycles of the first external clock signal transpire. The data is output synchronously with respect to the first external clock signal. The method of operation comprises: receiving a request for a read operation; sensing data in a portion of the plurality of sense amplifiers in response to the request for a read operation; and outputting the data after a preprogrammed delay time transpires. The method may further include receiving an external clock signal wherein the preprogrammed time delay is representative of a fixed number of clock cycles of the external clock signal. The data is output synchronously with respect to the first external clock signal.
Abstract:
The present invention is directed to a synchronous memory device having a memory cell array divided into a plurality of subarrays, including first and second subarrays each having a plurality of subarray sections. The memory device further includes a device identification register to store an identification code to identify the memory device. A first subarray section in the memory device includes a first internal I/O line to access data from a first memory cell location in the first subarray section and a second internal I/O line to access data from a second memory cell location in the first subarray section. A second subarray section in the memory device includes a first internal I/O line to access data from a third memory cell location in the second subarray section and a second internal I/O line to access data from a fourth memory cell location in the second subarray section. In addition, the memory device includes output driver circuitry, including a first output driver and a second output driver, to output data onto the external bus in response to the read request when the identification information corresponds to the identification code. Multiplexer circuitry couples the first internal I/O line of the first subarray section to an input of the first output driver and couples the first internal I/O line of the second subarray section to an input of the second output driver in response to a clock edge of a first internal clock signal; and couples the second internal I/O line of the first subarray section to an input of the first output driver and couples the second internal I/O line of the second subarray section to an input of the second output driver in response to the clock edge of the second internal clock signal.
Abstract:
A synchronous memory device having at least one memory section which includes a plurality of memory cells. The memory device comprises a register to store a value which is representative of a delay time after which the memory device responds to a read request and clock receiver circuitry to receive first and second external clock signals. The memory device also includes an output driver(s) to output data on a bus, in response to a read request and in accordance with the delay time, wherein a first portion of the data is output synchronously with respect to the first external clock signal and a second portion of the data is output synchronously with respect to the second external clock signal. The memory device may include a delay locked loop to generate internal clock signal(s) using the external clock signal(s). The output drivers output data on the bus in response to the internal clock signal(s). The memory device may include input receiver circuitry, coupled to the bus, the receive the read request, wherein the read request is sampled from the bus synchronously with respect to the first external clock signal.
Abstract:
The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices.The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 8 bus data lines and an AddressValid bus line carry address, data and control information for memory addresses up to 40 bits wide.