Segmented superconducting tape having reduced AC losses and method of making
    11.
    发明申请
    Segmented superconducting tape having reduced AC losses and method of making 有权
    具有减小的AC损耗的分段超导带和制造方法

    公开(公告)号:US20070191202A1

    公开(公告)日:2007-08-16

    申请号:US11245722

    申请日:2005-10-06

    IPC分类号: C03C3/00

    摘要: A superconducting tape having reduced AC losses. The tape has a high temperature superconductor layer that is segmented. Disruptive strips, formed in one of the tape substrate, a buffer layer, and the superconducting layer create parallel discontinuities in the superconducting layer that separate the current-carrying elements of the superconducting layer into strips or filament-like structures. Segmentation of the current-carrying elements has the effect of reducing AC current losses. Methods of making such a superconducting tape and reducing AC losses in such tapes are also disclosed.

    摘要翻译: 具有减小的AC损耗的超导带。 胶带具有分段的高温超导体层。 形成在带基板,缓冲层和超导层之一中的破坏带在超导层中产生平行的不连续性,其将超导层的载流元件分成条或丝状结构。 载流元件的分段具有减小交流电流损耗的效果。 还公开了制造这种超导带并减少这种带中的AC损耗的方法。

    Process for improvement of IBAD texturing on substrates in a continuous mode
    12.
    发明申请
    Process for improvement of IBAD texturing on substrates in a continuous mode 审中-公开
    在连续模式下在基板上改进IBAD纹理的方法

    公开(公告)号:US20070026136A1

    公开(公告)日:2007-02-01

    申请号:US11191362

    申请日:2005-07-27

    IPC分类号: B05D5/12 C23C16/00 C23C14/00

    CPC分类号: C30B29/16 C30B23/02

    摘要: A process is disclosed of preparing a template layer of a biaxially oriented material by ion beam assisted deposition upon a length of a substrate within a vacuum deposition chamber, by passing a length of substrate across a cooling block within a vacuum deposition chamber, with the cooling block configured to contact the substrate and passing a cooled liquid or gas through said cooling block during deposition of said layer of biaxially oriented material by ion beam assisted deposition upon said length of substrate. Also, a process is disclosed of preparing a template layer of a biaxially oriented material by ion beam assisted deposition upon a length of a substrate within a vacuum deposition chamber, by contacting a substrate with a cooled gas from the group of argon, oxygen, nitrogen during the ion beam assisted deposition of the biaxially oriented material within the vacuum deposition chamber, the cooled gas exiting a series of openings in a cooling block within the vacuum deposition chamber, the cooling block configured to contact the substrate.

    摘要翻译: 公开了一种通过离子束辅助沉积在真空沉积室内的衬底长度上通过使一段衬底穿过真空沉积室内的冷却块而制备双轴取向材料的模板层的方法,其中冷却 块,其被配置成接触所述基底并且通过所述长度的衬底上的离子束辅助沉积在所述双轴取向材料层沉积期间使冷却的液体或气体通过所述冷却块。 此外,公开了一种通过离子束辅助沉积在真空沉积室内的衬底长度上制备双轴取向材料的模板层的方法,其通过使基底与来自氩,氧,氮的组的冷却气体接触 在双轴取向材料在真空沉积室内的离子束辅助沉积期间,冷却的气体离开真空沉积室内的冷却块中的一系列开口,冷却块构造成接触基板。

    Chemical solution deposition method of fabricating highly aligned MgO templates
    13.
    发明申请
    Chemical solution deposition method of fabricating highly aligned MgO templates 有权
    制备高度排列的MgO模板的化学溶液沉积方法

    公开(公告)号:US20060276344A1

    公开(公告)日:2006-12-07

    申请号:US11143369

    申请日:2005-06-02

    IPC分类号: H01L39/24

    摘要: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

    摘要翻译: 超导制品包括具有未结合的金属表面的基材; 不饱和的La 2 O 2 2 N 2 O 3或Gd 2 Zr 2 N的不均匀的阻挡层 由底物表面支撑并与衬底的表面相接触; 由所述非纹理化阻挡层支撑的双轴纹理缓冲层; 以及由双轴纹理缓冲层支撑的双轴织构化超导层。 此外,在金属基板上形成缓冲层的方法包括以下步骤:提供具有非纹理金属表面的基板; 用阻挡层前体涂覆基材的表面; 将前体转化为无纹理的阻挡层; 并且在非纹理化阻挡层上方并且支撑着双轴织构化的缓冲层。