Abstract:
A memory controller controls access to, and the power state of a plurality of dynamic memory devices. A cache in the memory controller stores entries that indicate a current power state for a subset of the dynamic memory devices. Device state lookup logic responds to a memory access request by retrieving first information from an entry, if any, in the cache corresponding to a device address in the memory access request. The device state lookup logic generates a miss signal when the cache has no entry corresponding to the device address. It also retrieves second information indicating whether the cache is currently storing a maximum allowed number of entries for devices in a predefined mid-power state. Additional logic converts the first and second information and miss signal into at least one command selection signal and at least one update control signal. Cache update logic updates information stored in the cache in accordance with the at least one update control signal. Command issue circuitry issues power state commands and access commands to the dynamic memory devices in accordance with the at least one command selection signal and the address in the memory access request.
Abstract:
Systems and methods for reducing heat flux in memory systems are described. In various embodiments, heat flux reductions are achieved by manipulating the device IDs of individual memory devices that comprise a memory module. Through the various described techniques, the per-face heat flux can be desirably reduced. Further, in some embodiments, reductions in heat flux are achieved by providing control lines that operably connect memory devices on different faces of a memory module.
Abstract:
Systems and methods for reducing heat flux in memory systems are described. In various embodiments, heat flux reductions are achieved by manipulating the device IDs of individual memory devices that comprise a memory module. Through the various described techniques, the per-face heat flux can be desirably reduced. Further, in some embodiments, reductions in heat flux are achieved by providing control lines that operably connect memory devices on different faces of a memory module.
Abstract:
A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period. In a variation of this system, the phase detector on the memory chip is configured to receive signals including a clock signal, a marking signal and a data-strobe signal from the memory controller, wherein the marking signal includes a pulse which marks a specific clock cycle in the clock signal. In this variation, the phase detector is configured to use the marking signal to window the specific clock cycle in the clock signal, and to use the data-strobe signal to capture the windowed clock signal, thereby creating a feedback signal which is returned to the memory controller to facilitate calibration of the timing relationship.
Abstract:
A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.
Abstract:
The disclosed embodiments relate to a system for processing memory references received from multiple processor cores. During operation, the system monitors the memory references to determine whether memory references from different processor cores are interfering with each other as the memory references are processed by a memory system. If memory references from different processor cores are interfering with each other, the system time-multiplexes the processing of memory references between processor cores, so that a block of consecutive memory references from a given processor core is processed by the memory system before memory references from other processor cores are processed.
Abstract:
A method of operating a memory device includes receiving first and second sets of bits to be stored in multi-level cells in the device. A multi-level encoding is selected from among a plurality of multi-level encodings for storing the first and second sets of bits in the multi-level cells. Each multi-level encoding includes at least four encoding levels for a respective multi-level cell. Respective multi-level encodings have respective costs associated with programming the first and second sets of bits into the multi-level cells in accordance with the respective multi-level encodings. The multi-level encoding is selected based on the respective costs of the respective encodings. The first and second sets of bits are encoded in accordance with the selected multi-level encoding to produce encoded data for storage in the device such that a respective multi-level cell stores respective bits from both the first and second sets of bits.
Abstract:
One or more pins may be modally assigned to either the command/address (C/A) or data (DQ) blocks of a uniform-package, multi-modal PHY (physical signaling interface) of a memory controller, thus enabling those pins to be used as C/A pins when the PHY is connected to some memory types, and as DQ pins when the PHY is connected to other memory types.
Abstract:
A cache-coherence protocol distributes atomic operations among multiple processors (or processor cores) that share a memory space. When an atomic operation that includes an instruction to modify data stored in the shared memory space is directed to a first processor that does not have control over the address(es) associated with the data, the first processor sends a request, including the instruction to modify the data, to a second processor. Then, the second processor, which already has control of the address(es), modifies the data. Moreover, the first processor can immediately proceed to another instruction rather than waiting for the address(es) to become available.
Abstract:
A memory bus with a first bus segment coupled to a memory controller that includes control logic and a first memory device, a second bus segment coupled to a second memory device, and a switch between the first bus segment and the second bus segment. The control logic outputs control information to the switch to selectively decouple the first bus segment and the second bus segment to effect a change in the length of the memory bus to enable data transfer with respect to the first memory device at a first data rate. Additionally, the control logic may output control information to the switch to selectively couple the first bus segment and the second bus segment to increase the length of the memory bus to enable data transfer with respect to the second memory device at a second data rate that is slower than the first data rate.