公开(公告)号：US08163767B2

公开(公告)日：2012-04-24

申请号：US11995445

申请日：2006-07-13

Applicant: Takayuki Inoue ,  Takashi Tojo ,  Masataka Morita ,  Yutaka Nakajima ,  Keiko Hatanaka ,  Shohei Shirakami ,  Hiroshi Sasaki ,  Akira Tanaka ,  Fumie Takahashi ,  Koichiro Mukoyoshi ,  Yasuyuki Higashi ,  Akira Okimoto ,  Takeshi Hondo ,  Hitoshi Sawada

Inventor： Takayuki Inoue ,  Takashi Tojo ,  Masataka Morita ,  Yutaka Nakajima ,  Keiko Hatanaka ,  Shohei Shirakami ,  Hiroshi Sasaki ,  Akira Tanaka ,  Fumie Takahashi ,  Koichiro Mukoyoshi ,  Yasuyuki Higashi ,  Akira Okimoto ,  Takeshi Hondo ,  Hitoshi Sawada

IPC: A61K31/44 ,  C07D471/14

CPC classification number: C07D471/14 ,  C07D519/00

Abstract: The invention relates to compound of the formula (I) or its salt, wherein —R1, —R2, —R3, —R4, —R5, -M-, —X— and —Y═ are as defined in the description, their use of as, medicament, the process for their preparation and use for the treatment of JAK3 mediated diseases.

Abstract translation: 本发明涉及式（I）化合物或其盐，其中-R1，-R2，-R3，-R4，-R5，-M-，-X-和-Y =如说明书中所定义，它们 使用as，药物，其制备方法和用于治疗JAK3介导的疾病。

公开(公告)号：US20120061663A1

公开(公告)日：2012-03-15

申请号：US13226713

申请日：2011-09-07

Applicant: Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

Inventor： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

IPC: H01L29/12 ,  H01L21/34

CPC classification number: H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

Abstract: An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

Abstract translation: 本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。 通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（ 使用第一材料膜作为核的结晶氧化物半导体膜）。 作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

公开(公告)号：US20110315979A1

公开(公告)日：2011-12-29

申请号：US13164296

申请日：2011-06-20

Applicant: Masashi Tsubuku ,  Takayuki Inoue ,  Suzunosuke Hiraishi ,  Erumu Kikuchi ,  Hiromichi Godo ,  Shuhei Yoshitomi ,  Koki Inoue ,  Akiharu Miyanaga ,  Shunpei Yamazaki

Inventor： Masashi Tsubuku ,  Takayuki Inoue ,  Suzunosuke Hiraishi ,  Erumu Kikuchi ,  Hiromichi Godo ,  Shuhei Yoshitomi ,  Koki Inoue ,  Akiharu Miyanaga ,  Shunpei Yamazaki

IPC: H01L29/78

CPC classification number: H01L29/7869 ,  H01L29/408

Abstract: Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ1 and τ2, τ1

Abstract translation: 制造的是包括与氧化物半导体层的一部分重叠的氧化物半导体层，源极电极层和漏极电极层，与氧化物半导体层重叠的栅极绝缘层，源极电极层和漏极电极层的晶体管， 以及与所述氧化物半导体层的与氧化物半导体层的一部分重叠的栅电极，其间设置有栅极绝缘层，其中，在作为沟道形成区域的氧化物半导体层被照射光并停止光照射之后，弛豫时间 氧化物半导体层的光响应特性中的载流子具有至少两种模式：τ1和τ2，τ1<τ2，τ2为300秒以下。 此外，制造包括晶体管的半导体器件。

公开(公告)号：US20110306985A1

公开(公告)日：2011-12-15

申请号：US12986848

申请日：2011-01-07

Applicant: Takayuki INOUE ,  Koichi KURAMOTO ,  Yoshio NAKASHIMA ,  Naohiko SUGITA ,  Mamoru MITSUISHI ,  Yoshikazu NAKASHIMA

Inventor： Takayuki INOUE ,  Koichi KURAMOTO ,  Yoshio NAKASHIMA ,  Naohiko SUGITA ,  Mamoru MITSUISHI ,  Yoshikazu NAKASHIMA

IPC: A61B19/00

CPC classification number: G06T19/003 ,  A61B34/20 ,  A61B34/30 ,  A61B2034/107 ,  G06T15/08 ,  G06T2210/41

Abstract: A surgical assistance system for operating on biological tissue using a surgical tool attached to an arm of an automatically-controlled surgical instrument so that an optimal feed rate of the tool is calculated and outputted to the surgical instrument, the system including: a device for storing and voxelizing medical image data obtained from a biological tissue subject to surgery; a device for setting an operative location based on the shape of the biological tissue; a device for calculating a tool path along which the tool travels to perform surgery at an operative location; a device for determining the region of interference between the tool and the voxels; a device for determining the hardness of the biological tissue in the interference region; a device for calculating an optimal tool feed rate corresponding to the hardness; and a device for outputting the feed rate obtained by the calculations to the surgical instrument.

Abstract translation: 一种外科辅助系统，用于使用附接到自动控制的手术器械的臂上的外科手术工具进行生物组织的操作，从而计算出所述工具的最佳进给速率并将其输出到所述手术器械，所述系统包括： 并且从进行手术的生物组织获得的医学图像数据的体素化; 用于基于生物组织的形状设置操作位置的装置; 用于计算工具行进的工具路径以在操作位置执行手术的装置; 用于确定所述工具与所述体素之间的干涉区域的装置; 用于确定干涉区域中生物组织的硬度的装置; 用于计算对应于硬度的最佳刀具进给速率的装置; 以及用于将通过计算获得的进给速率输出到外科器械的装置。

公开(公告)号：US20110248268A1

公开(公告)日：2011-10-13

申请号：US13167762

申请日：2011-06-24

Applicant: Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

Inventor： Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

IPC: H01L29/786

CPC classification number: H01L29/78618 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

Abstract: To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.

Abstract translation: 为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触 同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

公开(公告)号：US20110227082A1

公开(公告)日：2011-09-22

申请号：US13048023

申请日：2011-03-15

Applicant: Takayuki Inoue ,  Masashi Tsubuku ,  Suzunosuke Hiraishi ,  Junichiro Sakata ,  Erumu Kikuchi ,  Hiromichi Godo ,  Akiharu Miyanaga ,  Shunpei Yamazaki

Inventor： Takayuki Inoue ,  Masashi Tsubuku ,  Suzunosuke Hiraishi ,  Junichiro Sakata ,  Erumu Kikuchi ,  Hiromichi Godo ,  Akiharu Miyanaga ,  Shunpei Yamazaki

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/41733 ,  H01L31/032 ,  H01L31/18

Abstract: An oxide semiconductor layer in which “safe” traps exist exhibits two kinds of modes in photoresponse characteristics. By using the oxide semiconductor layer, a transistor in which light deterioration is suppressed to the minimum and the electric characteristics are stable can be achieved. The oxide semiconductor layer exhibiting two kinds of modes in photoresponse characteristics has a photoelectric current value of 1 pA to 10 nA inclusive. When the average time τ1 until which carriers are captured by the “safe” traps is large enough, there are two kinds of modes in photoresponse characteristics, that is, a region where the current value falls rapidly and a region where the current value falls gradually, in the result of a change in photoelectric current over time.

Abstract translation: “安全”陷阱存在的氧化物半导体层表现出光响应特性的两种模式。 通过使用氧化物半导体层，可以实现将光劣化抑制到最小并且电特性稳定的晶体管。 在光响应特性中表现出两种模式的氧化物半导体层具有1pA至10nA的光电流值。 当通过“安全”陷阱捕获载流子的平均时间τ1足够大时，光响应特性即电流值急剧下降的区域和电流值逐渐下降的区域有两种模式 在光电流随时间变化的结果中。

公开(公告)号：US07968880B2

公开(公告)日：2011-06-28

申请号：US12391398

申请日：2009-02-24

Applicant: Koji Dairiki ,  Takayuki Ikeda ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Hiromichi Godo ,  Daisuke Kawae ,  Takayuki Inoue ,  Satoshi Kobayashi

Inventor： Koji Dairiki ,  Takayuki Ikeda ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Hiromichi Godo ,  Daisuke Kawae ,  Takayuki Inoue ,  Satoshi Kobayashi

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC classification number: H01L29/78618 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

Abstract: To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.

Abstract translation: 为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触 同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

公开(公告)号：US20110039402A1

公开(公告)日：2011-02-17

申请号：US12848594

申请日：2010-08-02

Applicant: Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Takayuki INOUE ,  Erumu KIKUCHI

Inventor： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Takayuki INOUE ,  Erumu KIKUCHI

IPC: H01L21/20

CPC classification number: H01L21/02595 ,  C23C16/24 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

Abstract: A microcrystalline semiconductor film with high crystallinity is manufactured. In addition, a thin film transistor with excellent electric characteristics and high reliability, and a display device including the thin film transistor are manufactured with high productivity. A deposition gas containing silicon or germanium is introduced from an electrode including a plurality of projecting portions provided in a treatment chamber of a plasma CVD apparatus, glow discharge is caused by supplying high-frequency power, and thereby crystal particles are formed over a substrate, and a microcrystalline semiconductor film is formed over the crystal particles by a plasma CVD method.

Abstract translation: 制造具有高结晶度的微晶半导体膜。 此外，以高生产率制造具有优异的电特性和高可靠性的薄膜晶体管，以及包括薄膜晶体管的显示装置。 从设置在等离子体CVD装置的处理室中的多个突出部的电极引入含有硅或锗的沉积气体，通过供给高频电力而产生辉光放电，由此在基板上形成晶体粒子， 并且通过等离子体CVD法在晶体颗粒上形成微晶半导体膜。

公开(公告)号：US07828909B2

公开(公告)日：2010-11-09

申请号：US11141311

申请日：2005-06-01

Applicant: Takashi Miyauti ,  Kazuyoshi Takeuchi ,  Shigeru Matsuo ,  Takayuki Inoue ,  Hiroaki Inui ,  Makoto Oyama

Inventor： Takashi Miyauti ,  Kazuyoshi Takeuchi ,  Shigeru Matsuo ,  Takayuki Inoue ,  Hiroaki Inui ,  Makoto Oyama

IPC: A47L15/42 ,  B08B3/00 ,  B08B3/12

CPC classification number: D06F39/088 ,  A47L15/0002 ,  A47L15/0089 ,  A47L15/42 ,  A47L2601/17 ,  B05B17/0615 ,  D06F35/006

Abstract: A mist generating device includes a mist generation vibrator, and a sealed vessel accommodating therein a fluid and provided at a side of a vibrating surface of the mist generation vibrator. A wall portion which constitutes a part of the sealed vessel and faces the mist generation vibrator has a thin film membrane and a mist of liquid outside the sealed vessel is generated by ultrasonic vibration transmitted from the mist generation vibrator via the fluid in the sealed vessel and the thin film membrane.

Abstract translation: 雾产生装置包括雾产生振动器和容纳流体并设置在雾产生振动器的振动表面侧的密封容器。 构成密封容器的一部分并且面向雾产生振动器的壁部分具有薄膜膜，并且通过密封容器中的流体从雾化振动器传递的超声波振动产生密封容器外的液体雾， 薄膜。

公开(公告)号：US07801352B2

公开(公告)日：2010-09-21

申请号：US11477822

申请日：2006-06-30

Applicant: Shigeru Uchiyama ,  Takayuki Inoue ,  Masatoshi Okugawa ,  Jeremy Cooke

Inventor： Shigeru Uchiyama ,  Takayuki Inoue ,  Masatoshi Okugawa ,  Jeremy Cooke

IPC: G06K9/00

CPC classification number: G02B21/367

Abstract: In acquisition of a micro image of a sample S by a micro image acquiring unit, when a plurality of image acquiring ranges are set for the sample S as an object of image acquisition, a plurality of corresponding focus information are set, and furthermore, when a plurality of partial images acquired by scanning the sample S by the micro image acquiring unit include a partial image including mixing of a plurality of image acquiring ranges, the focus information is switched in the middle of scanning of the partial image. With such a structure, even when a plurality of objects are contained in the sample S, images of the respective objects can be preferably acquired. Thereby, an image acquiring apparatus, an image acquiring method, and an image acquiring program which are capable of preferably acquiring images of a plurality of objects are realized even when the plurality of objects are contained in a sample S.

Abstract translation: 在通过微图像获取单元获取样本S的微图像时，当为作为图像获取对象的样本S设置多个图像获取范围时，设置多个对应的焦点信息，此外，当 通过由微图像获取单元扫描样本S获取的多个部分图像包括包括多个图像获取范围的混合的部分图像，在部分图像的扫描中间切换焦点信息。 通过这样的结构，即使在样本S中包含多个物体，也可以优选获得各个物体的图像。 因此，即使当多个对象被包含在样本S中时，也能够实现能够优选地获取多个对象的图像的图像获取装置，图像获取方法和图像获取程序。