公开(公告)号：US5300321A

公开(公告)日：1994-04-05

申请号：US056768

申请日：1993-05-04

申请人： Tadashi Nakano ,  Tomohiro Ohta

发明人： Tadashi Nakano ,  Tomohiro Ohta

IPC分类号： C23C16/34 ,  C23C16/00

CPC分类号： C23C16/34

摘要： A process which is capable of depositing a titanium nitride film of a high quality at a high deposition rate by low temperature chemical vapor deposition is provided. The titanium nitride film is deposited using a gas source comprising a compound of the general formula:A.sub.n B.sub.m Tiwherein n and m are independently selected from integers of from 1 to 3 provided that sum of n and m is equal to or smaller than 4; A is selected from a cyclic hydrocarbon group and a nitrogen-containing heterocyclic group which is bonded to the titanium by .pi. electron; and B is an alkylamine derivative group containing a nitrogen atom which is directly bonded to the titanium. The film deposition process of the invention is highly useful in LSI fabrication.

摘要翻译： 提供了一种能够通过低温化学气相沉积以高沉积速率沉积高质量的氮化钛膜的方法。 使用包含以下通式的化合物的气体源沉积氮化钛膜：AnBmTi其中n和m独立地选自1至3的整数，条件是n和m的和等于或小于4; A选自环状烃基和通过（pi）电子与钛结合的含氮杂环基; B是含有与钛直接结合的氮原子的烷基胺衍生物基团。 本发明的成膜方法在LSI制造中是非常有用的。

公开(公告)号：US5225245A

公开(公告)日：1993-07-06

申请号：US568857

申请日：1990-08-17

申请人： Tomohiro Ohta ,  Eiichi Kondoh ,  Tohru Mitomo ,  Kenichi Otsuka ,  Hiroshi Sekihashi

发明人： Tomohiro Ohta ,  Eiichi Kondoh ,  Tohru Mitomo ,  Kenichi Otsuka ,  Hiroshi Sekihashi

IPC分类号： C23C16/46

CPC分类号： C23C16/463 ,  C23C16/46

摘要： An apparatus for forming, by a chemical vapor deposition process, a thin film of crystals such as diamond on a surface of a heated substrate placed in a reaction vessel. The apparatus has a substrate supporting structure, a heater for heating the substrate by heat conduction or by electric current supplied directly to the substrate, and a cooling device for cooling the substrate. The heater is controlled in accordance with the measured temperature of the substrate so as to accurately maintain the substrate temperature at a constant level.

公开(公告)号：US5209182A

公开(公告)日：1993-05-11

申请号：US875424

申请日：1992-04-29

申请人： Tomohiro Ohta ,  Eiichi Kondoh ,  Tohru Mitomo ,  Kenichi Otsuka ,  Hiroshi Sekihashi

发明人： Tomohiro Ohta ,  Eiichi Kondoh ,  Tohru Mitomo ,  Kenichi Otsuka ,  Hiroshi Sekihashi

IPC分类号： C23C16/46

CPC分类号： C23C16/463 ,  C23C16/46

摘要： An apparatus for forming, by a chemical vapor deposition process, a thin film of crystals such as diamond on a surface of a heated substrate placed in a reaction vessel. The apparatus has a substrate supporting structure, a heater for heating the substrate by heat conduction or by electric current supplied directly to the substrate, and a cooling device for cooling the substrate. The heater is controlled in accordance with the measured temperature of the substrate so as to accurately maintain the substrate temperature at a constant level.

摘要翻译： 一种用于通过化学气相沉积工艺在放置在反应容器中的加热衬底的表面上形成诸如金刚石的晶体薄膜的装置。 该装置具有基板支撑结构，用于通过热传导加热基板的加热器或直接供应到基板的电流，以及用于冷却基板的冷却装置。 根据基板的测量温度来控制加热器，以便将基板温度准确地维持在恒定水平。

公开(公告)号：US07390830B1

公开(公告)日：2008-06-24

申请号：US09959635

申请日：2000-05-18

申请人： Tatsuki Shiota ,  Fuminori Miyagi ,  Takashi Kamimura ,  Tomohiro Ohta ,  Yasuhiro Takano ,  Hideki Horiuchi

发明人： Tatsuki Shiota ,  Fuminori Miyagi ,  Takashi Kamimura ,  Tomohiro Ohta ,  Yasuhiro Takano ,  Hideki Horiuchi

IPC分类号： A61K31/40

CPC分类号： C07D223/12 ,  A61K31/40 ,  A61K31/401 ,  A61K31/4025 ,  A61K31/404 ,  A61K31/4155 ,  A61K31/4178 ,  A61K31/4184 ,  A61K31/4192 ,  A61K31/422 ,  A61K31/423 ,  A61K31/4245 ,  A61K31/427 ,  A61K31/429 ,  A61K31/433 ,  A61K31/435 ,  A61K31/4439 ,  A61K31/444 ,  A61K31/445 ,  A61K31/4468 ,  A61K31/4525 ,  A61K31/453 ,  A61K31/4535 ,  A61K31/454 ,  A61K31/4545 ,  A61K31/455 ,  A61K31/4709 ,  A61K31/506 ,  A61K31/53 ,  A61K31/5377 ,  A61K31/55 ,  C07D207/09 ,  C07D207/14 ,  C07D211/26 ,  C07D211/58

摘要： This invention provides remedies or prophylactics for diseases in association with chemokines such as MIP-1 α and/or MCP-1. Namely, remedies or prophylactics for diseases in association with the chemokines such as rheumatoid arthritis or nephritis contain, as the active ingredient, cyclic amine derivatives represented by the following formula (I), pharmaceutically acceptable acid addition salts thereof or pharmaceutically acceptable C1-C6 alkyl addition salts thereof.

摘要翻译： 本发明提供了与趋化因子例如MIP-1α和/或MCP-1相关的疾病的补救措施或预防措施。 即，与趋化因子如类风湿性关节炎或肾炎相关的疾病的补救措施或预防措施含有作为活性成分的由下式（I）表示的环胺衍生物，其药学上可接受的酸加成盐或药学上可接受的C < 其中C 1 -C 6烷基加成盐。

公开(公告)号：US6001736A

公开(公告)日：1999-12-14

申请号：US610341

申请日：1996-03-04

申请人： Eiichi Kondo ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Yumiko Kawano ,  Takeshi Kaizuka ,  Shinpei Jinnouchi

发明人： Eiichi Kondo ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Yumiko Kawano ,  Takeshi Kaizuka ,  Shinpei Jinnouchi

IPC分类号： H01L21/306 ,  H01L21/768 ,  H01L21/441

CPC分类号： H01L21/02068 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76877

摘要： An insulating layer is provided on a semiconductor substrate, a contact hole is formed in the insulating layer, and an underlying metal film is provided on a whole surface of the substrate including inner walls of the contact hole. A surface condition of the underlying metal film is adjusted by a hydrogen plasma treatment. By the hydrogen plasma treatment, a surface of the underlying metal film is hydrogenated and is sputter-etched, so that a disordered film and contaminants adsorbed on the surface of the underlying metal film are removed. Next, aluminum is deposited on the underlying metal film by a chemical vapor deposition process using an organic aluminum compound such as DMAH. The contact hole can be effectively filled with aluminum.

摘要翻译： 绝缘层设置在半导体衬底上，在绝缘层中形成接触孔，并且在包括接触孔的内壁的衬底的整个表面上设置下面的金属膜。 通过氢等离子体处理来调整底层金属膜的表面状态。 通过氢等离子体处理，下面的金属膜的表面被氢化并进行溅射蚀刻，从而去除吸附在下面的金属膜的表面上的无序的膜和污染物。 接下来，通过使用有机铝化合物如DMAH的化学气相沉积工艺将铝沉积在下面的金属膜上。 接触孔可以有效地填充铝。

公开(公告)号：US5652180A

公开(公告)日：1997-07-29

申请号：US264928

申请日：1994-06-24

申请人： Hiroshi Shinriki ,  Hiroshi Yamamoto ,  Nobuyuki Takeyasu ,  Takayuki Komiya ,  Tomohiro Ohta

发明人： Hiroshi Shinriki ,  Hiroshi Yamamoto ,  Nobuyuki Takeyasu ,  Takayuki Komiya ,  Tomohiro Ohta

IPC分类号： H01L21/768 ,  H01L21/285

CPC分类号： H01L21/76879 ,  H01L2924/0002

摘要： A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by a selective Al CVD, and a metal wiring formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film.

摘要翻译： 具有接触结构的半导体器件包括硅衬底，形成在硅衬底的表面中的扩散区，沉积在扩散区上的高熔点金属的硅化物膜，形成在硅衬底上的绝缘膜，接触孔 形成在绝缘膜上，使得硅化物膜暴露在接触孔的底部，形成在接触膜底部的硅化物膜的暴露表面上的防扩散膜，通过接触孔形成的插塞 选择性Al CVD，以及形成在绝缘膜上的金属布线，使得金属布线通过插塞，防扩散膜和硅化物膜电连接到扩散区。 抗扩散膜可以通过氮化硅化物膜的表面而形成。

公开(公告)号：US5627102A

公开(公告)日：1997-05-06

申请号：US569319

申请日：1995-12-08

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/28

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US5521423A

公开(公告)日：1996-05-28

申请号：US228257

申请日：1994-04-15

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Tomohiro Ohta

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Tomohiro Ohta

IPC分类号： H01L23/525 ,  H01L29/04 ,  H01L27/10 ,  H01L29/00

CPC分类号： H01L23/5252 ,  H01L2924/0002

摘要： An antifuse element suitable for use in FPGA. When a device is miniaturized to reduce the write voltage in an antifuse element and as the film thickness of the antifuse dielectric film is being reduced, the dielectric breakdown voltage is greatly variable due to the irregularity of the underlying metal. If the dielectric film is formed by a metal oxide having a relatively high specific permitivity without changing its parasitic capacity as compared to the prior art, the film thickness of the dielectric film can be increased in comparison with oxide and nitride films formed according to the prior art. The irregularity of the underlying metal can be reduced by coating it with a metal nitride or TiB film or TiC film. To equalize the dielectric breakdown voltage, another insulation film having a film thickness such that the direct tunnel conduction is dominant is formed below the metal oxide. To reduce the irregularity of the metal surface and to reduce the resistance after dielectric breakdown, an amorphous silicon layer is deposited before the metal oxide is deposited thereover to form a laminated film.

摘要翻译： 适用于FPGA的反熔丝元件。 当器件小型化以降低反熔丝元件中的写入电压时，并且由于反熔丝电介质膜的膜厚度正在减小，所以介电击穿电压由于下面的金属的不规则性而极大地变化。 如果与现有技术相比，电介质膜由具有相对高的比容容的金属氧化物形成而不改变其寄生电容，则与根据现有技术形成的氧化物和氮化物膜相比，电介质膜的膜厚可以增加 艺术。 可以通过用金属氮化物或TiB膜或TiC膜涂覆来降低底层金属的不规则性。 为了均衡绝缘击穿电压，具有膜厚度使得直接隧道导通为主的另一绝缘膜形成在金属氧化物的下面。 为了减少金属表面的不规则性并且在介电击穿之后降低电阻，在将金属氧化物沉积在其之前形成非晶硅层以形成层压膜。

公开(公告)号：US20080311313A1

公开(公告)日：2008-12-18

申请号：US11662764

申请日：2005-10-04

申请人： Yasuo Kobayashi ,  Tomohiro Ohta ,  Songyun Kang ,  Ikuo Sawada

发明人： Yasuo Kobayashi ,  Tomohiro Ohta ,  Songyun Kang ,  Ikuo Sawada

IPC分类号： B01J19/08 ,  B05C11/00

CPC分类号： C23C16/26 ,  C23C16/45565 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32229 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3127

摘要： For a substrate (W) placed in an airtight processing vessel (1), plasma is generated by introducing a microwave to a radial line slot antenna (4). Conditions are set such that the pressure in the processing vessel is in the range of from 7.32 Pa to 8.65 Pa, the microwave power is in the range of from 2000W to 2300W, the distance (L1) between the surface of the substrate and an opposed face of a raw-material supply member (3) is in the range of from 70 mm to 105 mm, and the distance (L2) between the surface of the substrate and an opposed face of a discharge gas supply member (2) is in the range of from 100 mm to 140 mm. Under these conditions, a raw-material gas consisting of a cyclic C5F8 gas is activated based on energy of the microwave. Consequently, film-forming species containing C4F6 ions and/or C4F6 radicals in a greater content can be obtained. Thus, a fluorine-added carbon film excellent in the leak properties and heat stability can be securely formed.

摘要翻译： 对于放置在气密处理容器（1）中的衬底（W），通过将微波引入径向线缝隙天线（4）来产生等离子体。 条件被设定为使得处理容器中的压力在7.32Pa至8.65Pa的范围内，微波功率在2000W至2300W的范围内，衬底的表面与相对的面之间的距离（L1） 原材料供给部件（3）的表面在70mm〜105mm的范围内，并且基板的表面与排出气体供给部件（2）的相对面之间的距离（L2）处于 范围从100 mm到140 mm。 在这些条件下，由循环C5F8气体组成的原料气体基于微波的能量而被激活。 因此，可以获得含有更多含量的C4F6离子和/或C4F6自由基的成膜物质。 因此，能够可靠地形成漏电性和热稳定性优异的氟加成膜。

公开(公告)号：US20060154482A1

公开(公告)日：2006-07-13

申请号：US10543378

申请日：2003-12-26

申请人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

发明人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76862

摘要： An object of the invention is to make it possible to perform the embedding of a Cu diffusion preventing film and a Cu film to a fine pattern of a high aspect ratio by using a medium of a supercritical state in a manufacturing process of a semiconductor device. The object of the invention is achieved by a substrate processing method comprising a first step of processing a substrate by supplying a first processing medium containing a first medium of a supercritical state onto the substrate, a second step of forming a Cu diffusion preventing film on the substrate by supplying a second processing medium containing a second medium of a supercritical state onto the substrate, and a third step of forming a Cu film on the substrate by supplying a third processing medium containing a third medium of a supercritical state onto the substrate.