公开(公告)号：US5300321A

公开(公告)日：1994-04-05

申请号：US056768

申请日：1993-05-04

申请人： Tadashi Nakano ,  Tomohiro Ohta

发明人： Tadashi Nakano ,  Tomohiro Ohta

IPC分类号： C23C16/34 ,  C23C16/00

CPC分类号： C23C16/34

摘要： A process which is capable of depositing a titanium nitride film of a high quality at a high deposition rate by low temperature chemical vapor deposition is provided. The titanium nitride film is deposited using a gas source comprising a compound of the general formula:A.sub.n B.sub.m Tiwherein n and m are independently selected from integers of from 1 to 3 provided that sum of n and m is equal to or smaller than 4; A is selected from a cyclic hydrocarbon group and a nitrogen-containing heterocyclic group which is bonded to the titanium by .pi. electron; and B is an alkylamine derivative group containing a nitrogen atom which is directly bonded to the titanium. The film deposition process of the invention is highly useful in LSI fabrication.

摘要翻译： 提供了一种能够通过低温化学气相沉积以高沉积速率沉积高质量的氮化钛膜的方法。 使用包含以下通式的化合物的气体源沉积氮化钛膜：AnBmTi其中n和m独立地选自1至3的整数，条件是n和m的和等于或小于4; A选自环状烃基和通过（pi）电子与钛结合的含氮杂环基; B是含有与钛直接结合的氮原子的烷基胺衍生物基团。 本发明的成膜方法在LSI制造中是非常有用的。

公开(公告)号：US06063703A

公开(公告)日：2000-05-16

申请号：US81047

申请日：1998-05-19

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connecting holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，在绝缘膜上形成诸如TiN的下面的金属膜和连接孔的底壁和侧壁，通过CVD 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US5998522A

公开(公告)日：1999-12-07

申请号：US42668

申请日：1998-03-17

申请人： Tadashi Nakano ,  Makoto Shimura ,  Tomohiro Ohta

发明人： Tadashi Nakano ,  Makoto Shimura ,  Tomohiro Ohta

IPC分类号： C08G77/04 ,  C09D5/25 ,  C09D183/04 ,  C23C18/12 ,  G01N24/08 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  C08K5/10

CPC分类号： H01L23/5329 ,  C23C18/1212 ,  C23C18/122 ,  G01N24/08 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/316 ,  H01L21/76801 ,  H01L21/76819 ,  H01L2924/0002

摘要： A coating solution for forming an insulating film used in production of semiconductor devices includes siloxanes represented by a general formula:[SiR.sub.3 O.sub.1/2 ].sub.k [SiR.sub.2 O.sub.2/2 ].sub.l [SiRO.sub.3/2 ].sub.m [SiO.sub.4/2 ].sub.nwhere each of k, l, m and n is an integer, R may be the same or different and represents at least one organic group, and a ratio of (3k+21+m) to (k+l+m+n) is between about 0.8 and about 1.3. The present invention further relates to a method for preparing the coating solution, and a method for forming the insulating film using the coating solution, including the steps of coating the coating solution on a surface of a substrate of the semiconductor device to form a coated film, fluidizing the coated film at a temperature between about 150.degree. C. to about 300.degree. C. to planarize the surface of the substrate, and curing the fluidized coated film to form the insulating film. The present invention permits the formation of the insulating film with excellent properties such as an ability of fill up fine grooves and to planarize the surface of the substrate, and a small shrinkage factor. The method for evaluating the coating solution using .sup.29 Si-NMR technique is also described.

摘要翻译： 用于形成用于制造半导体器件的绝缘膜的涂布溶液包括由以下通式表示的硅氧烷：[SiR 3 O 1/2/2] k [SiR 2 O 2/2] l [SiRO 3/2] m [SiO 4/2] n，其中k ，l，m和n是整数，R可以相同或不同，表示至少一个有机基团，（3k + 21 + m）与（k + 1 + m + n）的比例在约0.8之间 约1.3。 本发明还涉及一种涂布溶液的制备方法以及使用该涂布液形成绝缘膜的方法，包括以下步骤：将涂布溶液涂布在半导体器件的基板的表面上以形成涂膜 在约150℃至约300℃的温度下使涂覆膜流化，使基材表面平坦化，并使流化涂膜固化形成绝缘膜。 本发明允许形成具有优异性能的绝缘膜，例如填充细槽的能力和使基板的表面平坦化，并且收缩率小。 还描述了使用29Si-NMR技术评价涂布溶液的方法。

公开(公告)号：US5973402A

公开(公告)日：1999-10-26

申请号：US791161

申请日：1997-01-30

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US5840821A

公开(公告)日：1998-11-24

申请号：US545736

申请日：1995-11-21

申请人： Tadashi Nakano ,  Makoto Shimura ,  Tomohiro Ohta

发明人： Tadashi Nakano ,  Makoto Shimura ,  Tomohiro Ohta

IPC分类号： C08G77/04 ,  C09D5/25 ,  C09D183/04 ,  C23C18/12 ,  G01N24/08 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  C08G77/00

CPC分类号： H01L23/5329 ,  C23C18/1212 ,  C23C18/122 ,  G01N24/08 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/316 ,  H01L21/76801 ,  H01L21/76819 ,  H01L2924/0002

摘要： A coating solution for forming an insulating film used in production of semiconductor devices includes siloxanes represented by a general formula:�SiR.sub.3 O.sub.1/2 !.sub.k �SiR.sub.2 O.sub.2/2 !.sub.l �SiRO.sub.3/2 !.sub.m �SiO.sub.4/2 !.sub.n where each of k, l, m and n is an integer, R may be the same or different and represents at least one organic group, and a ratio of (3k+2l+m) to (k+l+m+n) is between about 0.8 and about 1.3. The present invention further relates to a method for preparing the coating solution, and a method for forming the insulating film using the coating solution, including the steps of coating the coating solution on a surface of a substrate of the semiconductor device to form a coated film, fluidizing the coated film at a temperature between about 150.degree. C. to about 300.degree. C. to planarize the surface of the substrate, and curing the fluidized coated film to form the insulating film. The present invention permits the formation of the insulating film with excellent properties such as an ability of fill up fine groves and to planarize the surface of the substrate, and a small shrinkage factor. The method for evaluating the coating solution using .sup.29 Si-NMR technique is also described.

摘要翻译： PCT No.PCT / JP94 / 01910 Sec。 371日期：1995年11月21日 102（e）日期1995年11月21日PCT 1994年11月11日PCT公布。 公开号WO95 / 24639 日期1995年9月14日，用于制造半导体器件的绝缘膜形成用涂布液包括由以下通式表示的硅氧烷：[SiR 3 O 1/2/2] k [SiR 2 O 2/2] l [SiRO 3/2] m [SiO 4/2] 其中k，l，m和n各自为整数，R可以相同或不同，表示至少一个有机基团，并且（3k + 21 + m）与（k + 1 + m + n） 在约0.8和约1.3之间。 本发明还涉及一种涂布溶液的制备方法以及使用该涂布液形成绝缘膜的方法，包括以下步骤：将涂布溶液涂布在半导体器件的基板的表面上以形成涂膜 在约150℃至约300℃的温度下使涂覆膜流化，使基材表面平坦化，并使流化涂膜固化形成绝缘膜。 本发明允许形成具有优异性能的绝缘膜，例如填充细小树脂的能力和使基板的表面平坦化，并且收缩率小。 还描述了使用29Si-NMR技术评价涂布溶液的方法。

公开(公告)号：US5605867A

公开(公告)日：1997-02-25

申请号：US34748

申请日：1993-03-15

申请人： Nobuyoshi Sato ,  Tomohiro Ohta ,  Tadashi Nakano ,  Hiroshi Yamamoto

发明人： Nobuyoshi Sato ,  Tomohiro Ohta ,  Tadashi Nakano ,  Hiroshi Yamamoto

IPC分类号： C23C16/02 ,  C23C16/40 ,  H01L21/00 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/768 ,  H01L21/02

CPC分类号： H01L21/67017 ,  C23C16/0272 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/31051 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76801 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76829 ,  Y10S148/017 ,  Y10S438/974

摘要： In a method of manufacturing an insulating film of a semiconductor device by a chemical vapor deposition, a surface of a semiconductor wafer is treated with an organic compound such as ethanol and methanol, and then the semiconductor wafer is transported into a reaction chamber and an insulating film is deposited on the thus treated surface of the semiconductor wafer by a chemical vapor deposition using a raw material such as organic silicon compound. By treating the surface of the semiconductor wafer with the organic compound prior to the deposition, the filling capability and planarization of the insulating film are improved. Further the insulating film thus formed is free from voids and clacks, and an amount of water contained in the insulating film is very small. The treatment of the surface of the semiconductor wafer can be performed simply by spin coating, spaying, vapor exposing or dipping, so that the throughput can be improved. Moreover, a gas of said organic compound for treating the surface of the semiconductor wafer may be mixed with raw material gas and reaction gas in the reaction chamber.

摘要翻译： 在通过化学气相沉积制造半导体器件的绝缘膜的方法中，用诸如乙醇和甲醇的有机化合物处理半导体晶片的表面，然后将半导体晶片输送到反应室和绝缘体 通过使用有机硅化合物等原料的化学气相沉积将膜沉积在如此处理的半导体晶片的表面上。 通过在沉积之前用有机化合物处理半导体晶片的表面，提高了绝缘膜的填充能力和平坦化。 此外，如此形成的绝缘膜没有空隙和间隙，并且绝缘膜中所含的一定量的水非常小。 可以简单地通过旋涂，喷涂，蒸汽曝光或浸渍来进行半导体晶片表面的处理，从而可以提高生产量。 此外，用于处理半导体晶片的表面的所述有机化合物的气体可以与反应室中的原料气体和反应气体混合。

公开(公告)号：US5532191A

公开(公告)日：1996-07-02

申请号：US216410

申请日：1994-03-23

申请人： Tadashi Nakano ,  Nobuyoshi Sato ,  Tomohiro Ohta ,  Hiroshi Yamamoto

发明人： Tadashi Nakano ,  Nobuyoshi Sato ,  Tomohiro Ohta ,  Hiroshi Yamamoto

IPC分类号： H01L21/3105

CPC分类号： H01L21/31053

摘要： A method of planarizing an insuating film includes the steps of preparing a semiconductor substrate; treating an uneven surface of the substrate with an organic solvent; forming an insulating film on the thus-treated surface of the substrate by a chemical vapor deposition using an organic silicon compound as a raw material or depositing SOG, forming an etching stop film having a chemical mechanical polishing etching speed slower than that of the insulating film by depositing silicon oxide or silicon oxynitride by performing a chemical vapor deposition using an inorganic silicon compound as a raw material; and etching back at least a part of the insulating film formed on the uneven surface of the substrate by a chemical mechanical polishing process using the etching stop film.

摘要翻译： 平版化绝缘膜的方法包括制备半导体衬底的步骤; 用有机溶剂处理基板的不平坦表面; 通过使用有机硅化合物作为原料的化学气相沉积或沉积SOG在基板的这样处理的表面上形成绝缘膜，形成化学机械抛光蚀刻速度比绝缘膜慢的蚀刻停止膜 通过使用无机硅化合物作为原料进行化学气相沉积来沉积氧化硅或氮氧化硅; 并且通过使用该蚀刻停止膜的化学机械抛光工艺来蚀刻形成在基板的不平坦表面上的绝缘膜的至少一部分。

公开(公告)号：US5627102A

公开(公告)日：1997-05-06

申请号：US569319

申请日：1995-12-08

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/28

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US6015457A

公开(公告)日：2000-01-18

申请号：US39289

申请日：1998-03-12

申请人： Roger Y. Leung ,  Tadashi Nakano

发明人： Roger Y. Leung ,  Tadashi Nakano

IPC分类号： C08G77/12 ,  H01L21/312 ,  C08G77/04

CPC分类号： H01L21/312 ,  C08G77/12

摘要： Processes for producing poly (hydrido siloxane) copolymers and processes for producing solutions of such copolymers for coating semiconductor substrates are provided. The copolymers have the general formula: (HSiO.sub.1.5).sub.a (HSiO(OR)).sub.b (SiO.sub.2).sub.c, wherein R is a mixture of H and an alkyl group having between 1 and 4 carbon atoms; a+b+c=1; 0.5

摘要翻译： 制备聚（羟基硅氧烷）共聚物的方法和用于制备用于涂覆半导体衬底的这种共聚物的溶液的方法。 共聚物具有以下通式：（HSiO1.5）a（HSiO（OR））b（SiO 2）c，其中R是H和具有1至4个碳原子的烷基的混合物; a + b + c = 1; 0.5

公开(公告)号：US09863027B2

公开(公告)日：2018-01-09

申请号：US14395521

申请日：2012-06-29

申请人： Tadashi Nakano ,  Masaya Yamamoto ,  Hirofumi Taketsu

发明人： Tadashi Nakano ,  Masaya Yamamoto ,  Hirofumi Taketsu

IPC分类号： B32B15/08 ,  C23C2/06 ,  B32B15/095 ,  C23C8/00 ,  C23C8/16 ,  C22C18/04 ,  C23C28/00 ,  C23C22/73 ,  C23C22/83

CPC分类号： C23C2/06 ,  B32B15/095 ,  B32B2250/03 ,  C22C18/04 ,  C23C8/00 ,  C23C8/16 ,  C23C22/73 ,  C23C22/83 ,  C23C28/00 ,  Y10T428/12535 ,  Y10T428/12549 ,  Y10T428/12569 ,  Y10T428/12583 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/12667

摘要： A black-plated steel sheet has a Zn-plating layer containing molten Al and Mg, containing Al in the amount of 1.0-22.0 mass %, containing Mg in the amount of 1.3-10.0 mass %, and having a Zn black oxide distributed in a lamella pattern in the plating layer. The Zn black oxide is a Zn oxide derived from a Zn2Mg phase. The brightness of the surface of the Zn-plating layer containing the molten Al and Mg has an L* value of 60 or less.