公开(公告)号：US08368308B2

公开(公告)日：2013-02-05

申请号：US12717358

申请日：2010-03-04

申请人： Samer Banna ,  Valentin N. Todorow

发明人： Samer Banna ,  Valentin N. Todorow

IPC分类号： H01J7/24

CPC分类号： H01J37/32165 ,  H01J37/321 ,  H01L21/67069

摘要： Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching.

摘要翻译： 本发明的实施例通常提供一种电感耦合等离子体（ICP）反应器，其具有能够控制ICP源（第一RF源）和衬底偏压（第二RF源）之间的RF相位差的衬底RF偏压， 用于半导体工业中使用的等离子体处理反应堆。 RF相位差的控制为精细的过程调整提供了一个强大的旋钮。 例如，可以使用RF相位差的控制来控制平均蚀刻速率，蚀刻速率均匀性，蚀刻速率偏斜，临界尺寸（CD）均匀性和CD偏斜，CD范围，自DC偏置控制和 室匹配。

公开(公告)号：US20120097870A1

公开(公告)日：2012-04-26

申请号：US13097800

申请日：2011-04-29

申请人： GARY LERAY ,  SHAHID RAUF ,  VALENTIN N. TODOROW

发明人： GARY LERAY ,  SHAHID RAUF ,  VALENTIN N. TODOROW

IPC分类号： G21K1/093 ,  H05H1/04 ,  C23F1/08

CPC分类号： H01J37/321 ,  H01J37/32669

摘要： Apparatus for forming a magnetic field and methods of use thereof are provided herein. In some embodiments, a plurality of coils having substantially similar dimensions disposed about a process chamber in a symmetric pattern centered about a central axis of the process chamber, wherein the plurality of coils are configured to produce a magnetic field having a plurality of magnetic field lines that are substantially planar and substantially parallel. In some embodiments, the plurality of coils comprises eight coils disposed about the process chamber, wherein each of the eight coils is offset by an angle of about 45 degrees from respective adjacent coils of the eight coils.

摘要翻译： 本文提供了形成磁场的装置及其使用方法。 在一些实施例中，具有基本相似的尺寸的多个线圈以围绕处理室的中心轴线为中心的对称图案围绕处理室布置，其中多个线圈被配置为产生具有多个磁场线的磁场 其基本上是平面的并且基本上平行。 在一些实施例中，多个线圈包括围绕处理室布置的八个线圈，其中八个线圈中的每一个与八个线圈的相应相邻线圈相距大约45度的角度偏移。

公开(公告)号：US20110094683A1

公开(公告)日：2011-04-28

申请号：US12821626

申请日：2010-06-23

申请人： ZHIGANG CHEN ,  SHAHID RAUF ,  KENNETH S. COLLINS ,  MARTIN JEFF SALINAS ,  SAMER BANNA ,  VALENTIN N. TODOROW

发明人： ZHIGANG CHEN ,  SHAHID RAUF ,  KENNETH S. COLLINS ,  MARTIN JEFF SALINAS ,  SAMER BANNA ,  VALENTIN N. TODOROW

IPC分类号： H05H1/24 ,  H01P5/12

CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174

摘要： Apparatus for plasma processing are provided. In some embodiments, an RF feed structure includes a first RF feed to couple RF power to a plurality of symmetrically arranged stacked first RF coil elements; a second RF feed coaxially disposed about the first RF feed and electrically insulated therefrom, the second RF feed to couple RF power to a plurality of symmetrically arranged stacked second RF coil elements coaxially disposed with respect to the first RF coil elements. In some embodiments, a plasma processing apparatus includes a first RF coil; a second RF coil coaxially disposed with respect to the first RF coil; a first RF feed coupled to the first RF coil to provide RF power thereto; and a second RF feed coaxially disposed with respect to the first RF feed and electrically insulated therefrom, the second RF feed coupled to the second RF coil to provide RF power thereto.

摘要翻译： 提供等离子体处理装置。 在一些实施例中，RF馈送结构包括用于将RF功率耦合到多个对称布置的堆叠的第一RF线圈元件的第一RF馈送; 第二RF馈送，其围绕第一RF馈电同轴设置并与其电绝缘，第二RF馈送将RF功率耦合到相对于第一RF线圈元件同轴设置的多个对称布置的堆叠的第二RF线圈元件。 在一些实施例中，等离子体处理装置包括第一RF线圈; 相对于所述第一RF线圈同轴设置的第二RF线圈; 耦合到所述第一RF线圈以向其提供RF功率的第一RF馈送; 以及第二RF馈电，其相对于所述第一RF馈电同轴设置并与其电绝缘，所述第二RF馈电耦合到所述第二RF线圈以向其提供RF功率。

公开(公告)号：US07771606B2

公开(公告)日：2010-08-10

申请号：US11678047

申请日：2007-02-22

申请人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorow ,  Shashank C. Deshmukh

发明人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorow ,  Shashank C. Deshmukh

IPC分类号： B44C1/22 ,  C03C25/68 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/32137 ,  H01L21/3065 ,  H01L21/31116

摘要： A pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures is described. In an embodiment, a portion of a sample is removed by applying a pulsed plasma etch process. The pulsed plasma etch process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma. The plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma, but not during the ON state. In another embodiment, a first portion of a sample is removed by applying a continuous plasma etch process. The continuous plasma etch process is then terminated and a second portion of the sample is removed by applying a pulsed plasma etch process having pulsed reaction gas replenish.

摘要翻译： 描述了一种具有脉冲反应气体的脉冲等离子体系统，用于蚀刻半导体结构。 在一个实施例中，通过施加脉冲等离子体蚀刻工艺去除一部分样品。 脉冲等离子体蚀刻工艺包括多个占空比，其中每个占空比表示等离子体的导通状态和断开状态的组合。 等离子体由反应气体产生，其中反应气体在等离子体的关闭状态期间补充，而不是在ON状态下补充。 在另一个实施例中，通过施加连续的等离子体蚀刻工艺来移除样品的第一部分。 然后连续等离子体蚀刻工艺终止，通过施加具有脉冲反应气体补充的脉冲等离子体蚀刻工艺来除去样品的第二部分。

公开(公告)号：US07727413B2

公开(公告)日：2010-06-01

申请号：US11410717

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

IPC分类号： G01L21/30

CPC分类号： H01J37/321 ,  H01J37/32091 ,  H01J37/32165

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling plasma ion density by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入工艺区域，并通过控制VHF源功率的有效频率来控制等离子体离子密度。 在优选实施例中，通过耦合具有不同VHF频率的不同发生器的VHF源功率来执行耦合VHF源功率的步骤，并且通过控制由不同发生器耦合的功率比来执行控制有效频率的步骤。

公开(公告)号：US20090218317A1

公开(公告)日：2009-09-03

申请号：US12039350

申请日：2008-02-28

申请人： RODOLFO P. BELEN ,  Edward P. Hammond, IV ,  Brian K. Hatcher ,  Dan Katz ,  Alexander M. Paterson ,  Valentin N. Todorow

发明人： RODOLFO P. BELEN ,  Edward P. Hammond, IV ,  Brian K. Hatcher ,  Dan Katz ,  Alexander M. Paterson ,  Valentin N. Todorow

IPC分类号： C23F1/08 ,  C23F1/00

CPC分类号： C23C16/45565 ,  C23C16/45574 ,  H01J37/3244 ,  H01J37/32449

摘要： Embodiments of the present invention provide apparatus and method for processing a substrate with increased uniformity. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus comprises a chamber body defining a processing volume, a substrate support disposed in the processing volume, a showerhead disposed in the processing volume opposite to the substrate support, and a plasma generation assembly configured to ignite a plasma from the processing gases in the processing gas in the processing volume. The showerhead is configured to provide one or more processing gases to the processing volume. The showerhead has two or more distribution zones each independently controllable.

摘要翻译： 本发明的实施例提供了用于以均匀性增加来处理衬底的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置。 该装置包括限定处理体积的室主体，设置在处理容积中的基板支撑件，设置在与基板支撑件相对的处理体积中的喷头，以及等离子体产生组件，其被配置为在处理中点燃来自处理气体的等离子体 气体处理量。 喷头构造成为处理量提供一种或多种处理气体。 喷头具有两个或更多个分配区，每个分配区可独立控制。

公开(公告)号：US20090218043A1

公开(公告)日：2009-09-03

申请号：US12038887

申请日：2008-02-28

申请人： Ajit Balakrishna ,  Shahid Rauf ,  Andrew Nguyen ,  Michael D. Willwerth ,  Valentin N. Todorow

发明人： Ajit Balakrishna ,  Shahid Rauf ,  Andrew Nguyen ,  Michael D. Willwerth ,  Valentin N. Todorow

IPC分类号： H01L21/306

CPC分类号： H01J37/32449 ,  H01J37/3244

摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.

摘要翻译： 提供流量均衡器板用于衬底处理室。 流量均衡器板具有流动阻挡内部区域的环形形状，以及允许处理气体通过但在处理气体中保留特定元素的穿孔外部区域，例如活性自由基或离子。 内部和外部区域具有变化的径向宽度，以平衡处理气体在衬底表面上的流动。 在某些实施例中，流量均衡器板可用于校正由于排气口相对于处理容积和排气口之间的衬底支撑件的中心线的横向偏移造成的室流动不对称性。

公开(公告)号：US20090056629A1

公开(公告)日：2009-03-05

申请号：US11899614

申请日：2007-09-05

申请人： Dan Katz ,  David Palagashvili ,  Michael D. Willwerth ,  Valentin N. Todorow ,  Alexander M. Paterson

发明人： Dan Katz ,  David Palagashvili ,  Michael D. Willwerth ,  Valentin N. Todorow ,  Alexander M. Paterson

IPC分类号： C23C16/513

CPC分类号： H01L21/32137 ,  H01J37/3244 ,  H01J37/32642 ,  H01L21/3065 ,  H01L2924/19042

摘要： The disclosure concerns a wafer support for use in a plasma reactor chamber, in which the wafer support has a wafer edge gas injector adjacent and surrounding the wafer edge.

摘要翻译： 本公开涉及用于等离子体反应器室中的晶片支撑件，其中晶片支撑件具有与晶片边缘相邻并且围绕晶片边缘的晶片边缘气体注入器。

公开(公告)号：US20080179007A1

公开(公告)日：2008-07-31

申请号：US11685770

申请日：2007-03-14

申请人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C23F1/00

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. The reactor further includes workpiece support apparatus within the chamber configured for a workpiece to be placed thereon with its front side facing the ceiling. The support apparatus is configured to leave at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with an outer edge of the workpiece, the narrow gap being on the order of about 1% of the workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone, the reactor further comprising a vacuum pump coupled to the lower process zone. An external plasma-generating chamber is coupled to the chamber, the external plasma-generating chamber configured to introduce a plasma by-product into the lower process zone, and a supply of a polymer etch precursor gas to the external plasma-generating chamber. The ceiling includes a gas distribution plate facing the upper process zone, the reactor further comprising a purge gas supply coupled to the gas distribution plate.

摘要翻译： 提供反应器用于从工件的背面去除聚合物。 反应器包括具有天花板，地板和圆柱形侧壁的真空室。 所述反应器还包括在所述室内的工件支撑装置，所述工件支撑装置构造成用于要放置在其上的工件，其前侧面向天花板。 支撑装置被配置为留下被暴露的工件的后侧的至少一个环形周边。 限制构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上工艺区和下工艺之间分隔室的边界 反应器还包括耦合到下处理区的真空泵。 外部等离子体产生室耦合到室，外部等离子体发生室被配置为将等离子体副产物引入下部工艺区域，以及向外部等离子体产生室供应聚合物蚀刻前体气体。 天花板包括面向上处理区的气体分配板，反应器还包括连接到气体分配板的净化气体供应源。

公开(公告)号：US06694915B1

公开(公告)日：2004-02-24

申请号：US09611170

申请日：2000-07-06

申请人： John Holland ,  Valentin N. Todorow ,  Michael Barnes

发明人： John Holland ,  Valentin N. Todorow ,  Michael Barnes

IPC分类号： C23C16507

CPC分类号： H01J37/321

摘要： The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. A RF plasma source power supply is connected across each of the plural conductors.

摘要翻译： 在一个实施例中的本发明在用于处理半导体工件的等离子体反应器中实现。 反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线 并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离 对称轴。 RF等离子体源电源连接在多个导体中的每一个上。