Abstract:
A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiOxNy, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.
Abstract translation:防止再加工的光致抗蚀剂层中的重复塌陷的方法。 首先,施加含氧等离子体以除去塌陷的光致抗蚀剂。 因为含有氧的等离子体与包含SiO x N y Y y的底部防反射层反应,所以在底部防反射层上产生一些酸,导致在 随后再加工光致抗蚀剂。 接下来,在去除塌陷的光致抗蚀剂层之后,在抗反射层上进行碱性溶液处理。 最后,在反射层上形成返工光致抗蚀剂,而没有底切。
Abstract:
A lock. The lock includes an inner handle assembly, a latch bolt, and an outer handle assembly. The outer handle assembly includes an outer handle, an outer spindle, an actuating sleeve rotatably mounted in the outer spindle and having two guide slots each having an inclined section and a horizontal section, a locking plate mounted in the actuating sleeve and including two wings, and an unlatching member operably connected to the latch bolt. Each wing is extended through an associated guide slot into an associated positioning slot in the outer spindle. When the lock is in an unlocked state, the unlatching member is engaged with the locking plate to allow joint rotation. When the lock is in a locked state, the unlatching member is disengaged from the unlatching member such that the unlatching member is not turned when the outer handle is turned.
Abstract:
A method of forming a ring-type capacitor is provided. The method includes providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer defining a ring pattern; removing the substrate by using the patterned mask layer as a mask to form a ring-type trench in the substrate; the ring-type trench including an inner wall and an outer wall; and forming a capacitor structure on the inner wall and the outer wall of the ring-type trench.
Abstract:
An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and the first and third rectangular regions have the same first pattern configuration having a first pattern element, a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, and the second and fourth rectangular regions have the same second pattern configuration having a second pattern element, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein, the first pattern element is different from the second pattern element for allowing the second pattern configuration be chosen to align when the first pattern configuration on the substrate was damaged during process.
Abstract:
A method of forming a ring-type capacitor is provided. The method includes providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer defining a ring pattern; removing the substrate by using the patterned mask layer as a mask to form a ring-type trench in the substrate; the ring-type trench including an inner wall and an outer wall; and forming a capacitor structure on the inner wall and the outer wall of the ring-type trench.
Abstract:
A method for evaluating reticle registration between two reticle patterns. A wafer is defined and etched to form a first exposure pattern, by photolithography with a first reticle having a first reticle pattern thereon. A photoresist layer is formed over the wafer and defined as a second exposure pattern, by photolithography with a second reticle having a second reticle pattern thereon. A deviation value between the first and second exposure patterns is measured by a CD-SEM. The deviation value is calibrated according to the scaling degree and the overlay offset to obtain a registration data. The reticle registration between the two reticle patterns is evaluated based on the registration data.
Abstract:
A lock device that may be locked automatically includes a base fixed on a door plate. An actuating tube received in the hole of the base is provided with a locking member combined with a handle. The lock core unit has a lock core that may drive an actuating plate to rotate. The drive wheel has a drive slot for insertion of the actuating plate, so that the drive wheel and the actuating plate may be rotated simultaneously. An elastic member has two stop ends rested on the leg of the restoring wheel, and rested on the two sides of the ear plate of the locking plate. The drive plate has a first end inserted into an unlocking rotation knob of the other side of the door plate, and a second end inserted into the drive slot of the drive wheel.
Abstract:
A power-saving device and method are applicable to a first electronic device having at least one connection interface, and the first electronic device is coupled to a second electronic device via a bus. The power-saving device includes a detection circuit, a power control circuit, and a connection control circuit. The detection circuit is coupled to the connection interface, to detect a load state of the connection interface and generate a detection signal. The power control circuit controls power supplied to the first electronic device via the bus in response to a state of the detection signal. The connection control circuit controls a connection state of the bus according to the detection signal.
Abstract:
An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein each pattern configuration has at least two different pattern elements allowing other pattern elements be chosen to align when any one of the pattern elements on the substrate was damaged during process.