公开(公告)号：US20190214229A1

公开(公告)日：2019-07-11

申请号：US15864718

申请日：2018-01-08

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Nitin Ingle ,  Feiyue Ma ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

IPC: H01J37/32 ,  H01L27/10 ,  H01L21/02 ,  H01L21/285 ,  H01L27/02

CPC classification number: H01J37/32091 ,  H01J37/32449 ,  H01J37/32788 ,  H01J37/32972 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28518 ,  H01L27/0203 ,  H01L27/10

Abstract: Exemplary methods for laterally etching tungsten may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and tungsten slabs arranged within a plurality of recesses defined by at least one of the two vertical columns. At least two of the tungsten slabs may be connected by tungsten lining a portion of sidewalls of the trench. The methods may further include oxidizing the tungsten connecting the at least two of the tungsten slabs with the oxygen-containing precursor. The methods may include flowing a halide precursor into the semiconductor processing chamber. The methods may also include laterally etching the oxidized tungsten from the sidewalls of the trench.

公开(公告)号：US20190198300A1

公开(公告)日：2019-06-27

申请号：US15852911

申请日：2017-12-22

Applicant: Applied Materials, Inc.

Inventor： Hanshen Zhang ,  Zhenjiang Cui ,  Nitin Ingle

IPC: H01J37/32 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/535 ,  H01L23/532

CPC classification number: H01J37/32862 ,  H01J37/32357 ,  H01J37/32449 ,  H01J2237/3344 ,  H01J2237/3346 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76895 ,  H01L23/53266 ,  H01L23/535

Abstract: Exemplary methods for conditioning a processing region of a semiconductor processing chamber may include forming conditioning plasma effluents of an oxygen-containing precursor in a semiconductor processing chamber. The methods may include contacting interior surfaces of the semiconductor processing chamber bordering a substrate processing region with the conditioning plasma effluents. The methods may also include treating the interior surfaces of the semiconductor processing chamber.

公开(公告)号：US09947549B1

公开(公告)日：2018-04-17

申请号：US15332849

申请日：2016-10-24

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Zhenjiang Cui ,  Soonam Park ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00 ,  H01L21/3213 ,  H01L21/311 ,  C23F1/12 ,  H01J37/32 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/32136 ,  C23F1/12 ,  H01J37/32091 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32138 ,  H01L21/7684

Abstract: Methods are described herein for etching cobalt films which are difficult to volatize. The methods include exposing a cobalt film to a bromine or chlorine-containing precursor with a concurrent local plasma which applies a bias to the impinging etchants. Cobalt halide is formed on the surface at the same time an amorphized cobalt layer is formed near the surface. A carbon-and-nitrogen-containing precursor is later delivered to the substrate processing region to form volatile cobalt complexes which desorb from the surface of the cobalt film. Cobalt may be selectively removed. The concurrent production of cobalt halide and amorphized regions was found to markedly increase the overall etch rate and markedly improve surface smoothness upon exposure to the carbon-and-nitrogen-containing precursor. All the recited steps may now be performed in the same substrate processing chamber.

公开(公告)号：US20180102259A1

公开(公告)日：2018-04-12

申请号：US15332849

申请日：2016-10-24

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Zhenjiang Cui ,  Soonam Park ,  Nitin K. Ingle

IPC: H01L21/3213 ,  H01L21/311 ,  C23F1/12 ,  H01J37/32

CPC classification number: H01L21/32136 ,  C23F1/12 ,  H01J37/32091 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32138 ,  H01L21/7684

Abstract: Methods are described herein for etching cobalt films which are difficult to volatize. The methods include exposing a cobalt film to a bromine or chlorine-containing precursor with a concurrent local plasma which applies a bias to the impinging etchants. Cobalt halide is formed on the surface at the same time an amorphized cobalt layer is formed near the surface. A carbon-and-nitrogen-containing precursor is later delivered to the substrate processing region to form volatile cobalt complexes which desorb from the surface of the cobalt film. Cobalt may be selectively removed. The concurrent production of cobalt halide and amorphized regions was found to markedly increase the overall etch rate and markedly improve surface smoothness upon exposure to the carbon-and-nitrogen-containing precursor. All the recited steps may now be performed in the same substrate processing chamber.

公开(公告)号：US09312168B2

公开(公告)日：2016-04-12

申请号：US14523523

申请日：2014-10-24

Applicant: Applied Materials, Inc.

Inventor： Mehul B. Naik ,  He Ren ,  Zhenjiang Cui

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/311 ,  C23C16/30 ,  C23C16/36 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/7682 ,  C23C16/303 ,  C23C16/36 ,  H01J37/32082 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76819 ,  H01L21/76832 ,  H01L21/76834

Abstract: A method for forming an air gap structure in an integrated layer stack includes dry etching a mold layer disposed on the stack in a processing system under vacuum. The mold layer is disposed between one or more interconnects, and the process of dry etching of the mold layer exposes at least a portion of the interconnects. The method also includes depositing a liner layer over the exposed portion of the interconnects. In another embodiment, a method for forming an air gap structure in an integrated layer stack includes dry etching an oxide mold layer disposed on the stack in an a first processing chamber in a processing system under vacuum. The method also includes depositing a low-k material liner layer over the interconnects, wherein the liner has a thickness of less than about 2 nanometers. The methods disclosed herein are performed in a processing system without breaking vacuum.

Abstract translation: 在一体层叠体中形成气隙结构的方法包括在真空下在处理系统中干燥蚀刻设置在堆叠上的模具层。 模具层设置在一个或多个互连之间，并且模具层的干蚀刻的过程暴露至少一部分互连。 该方法还包括在互连的暴露部分上沉积衬垫层。 在另一实施例中，在一体层叠体中形成气隙结构的方法包括在真空下在处理系统中的第一处理室中干燥蚀刻设置在堆叠上的氧化物模层。 所述方法还包括在所述互连件上沉积低k材料衬垫层，其中所述衬垫具有小于约2纳米的厚度。 本文公开的方法在不破坏真空的处理系统中进行。

公开(公告)号：US12300503B2

公开(公告)日：2025-05-13

申请号：US17574733

申请日：2022-01-13

Applicant: Applied Materials, Inc.

Inventor： Keenan N. Woods ,  Zhenjiang Cui ,  Mark Saly

IPC: H01L21/321 ,  H01L21/311

Abstract: Embodiments of this disclosure provide methods for etching oxide materials. Some embodiments of this disclosure provide methods which selectively etch oxide materials over other materials. In some embodiments, the methods of this disclosure are performed by atomic layer etching (ALE). In some embodiments, the methods of this disclosure are performed within a processing chamber comprising a nickel chamber material.

公开(公告)号：US11769671B2

公开(公告)日：2023-09-26

申请号：US17018206

申请日：2020-09-11

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3065 ,  C23F1/12

CPC classification number: H01L21/3065 ,  C23F1/12

Abstract: Exemplary etching methods may include flowing a fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region of a semiconductor processing chamber. The hydrogen-containing precursor may be flowed at a flow rate of at least 2:1 relative to the flow rate of the fluorine-containing precursor. The methods may include forming a plasma of the fluorine-containing precursor and the hydrogen-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents into a substrate processing region housing a substrate. The substrate may include an exposed region of a tantalum or titanium material and an exposed region of a silicon-containing material or a metal. The methods may include contacting the substrate with the plasma effluents. The methods may include removing the tantalum or titanium material selectively to the silicon-containing material or the metal.

公开(公告)号：US20230290647A1

公开(公告)日：2023-09-14

申请号：US17689092

申请日：2022-03-08

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Rohan Puligoru Reddy ,  Xiaolin C. Chen ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3213 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11556

CPC classification number: H01L21/32136 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11556

Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

公开(公告)号：US20230010978A1

公开(公告)日：2023-01-12

申请号：US17373161

申请日：2021-07-12

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3213 ,  H01J37/32

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of a transition metal nitride and an exposed region of a metal. The contacting may form an oxidized portion of the transition metal nitride and an oxidized portion of the metal. The methods may include forming a plasma of a fluorine-containing precursor and a hydrogen-containing precursor to produce fluorine-containing plasma effluents. The methods may include removing the oxidized portion of the transition metal nitride to expose a non-oxidized portion of the transition metal nitride. The methods may include forming a plasma of a chlorine-containing precursor to produce chlorine-containing plasma effluents. The methods may include removing the non-oxidized portion of the transition metal nitride.

公开(公告)号：US20220139720A1

公开(公告)日：2022-05-05

申请号：US17574733

申请日：2022-01-13

Applicant: Applied Materials, Inc.

Inventor： Keenan N. Woods ,  Zhenjiang Cui ,  Mark Saly

IPC: H01L21/311

Abstract: Embodiments of this disclosure provide methods for etching oxide materials. Some embodiments of this disclosure provide methods which selectively etch oxide materials over other materials. In some embodiments, the methods of this disclosure are performed by atomic layer etching (ALE). In some embodiments, the methods of this disclosure are performed within a processing chamber comprising a nickel chamber material.