公开(公告)号：US20220228264A1

公开(公告)日：2022-07-21

申请号：US17714383

申请日：2022-04-06

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Robert Brennan Milligan ,  William George Petro ,  Eric Wang ,  Fred Alokozai ,  Dong Li ,  Hao Wang ,  Melvin Verbaas ,  Luping Li

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/52 ,  C23C16/46 ,  C23C16/44

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

公开(公告)号：US11306395B2

公开(公告)日：2022-04-19

申请号：US15636307

申请日：2017-06-28

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Robert Brennan Milligan ,  William George Petro ,  Eric Wang ,  Fred Alokozai ,  Dong Li ,  Hao Wang ,  Melvin Verbaas ,  Luping Li

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/52 ,  C23C16/46 ,  C23C16/44

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

公开(公告)号：US20210407809A1

公开(公告)日：2021-12-30

申请号：US17353262

申请日：2021-06-21

Applicant: ASM IP HOLDING B.V.

Inventor： Bhushan Zope ,  Eric Christopher Stevens ,  Shankar Swaminathan ,  Eric James Shero ,  Robert Brennan Milligan

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/08 ,  C23C16/455

Abstract: Vapor deposition processes for forming thin films comprising molybdenum on a substrate are provide. In some embodiments the processes comprise a plurality of deposition cycles in which the substrate is separately contacted with a vapor phase molybdenum precursor comprising a molybdenum halide, a first reactant comprising CO, and a second reactant comprising H2. In some embodiments the thin film comprises MoC, Mo2C, or MoOC. In some embodiments the substrate is additionally contacted with a nitrogen reactant and a thin film comprising molybdenum, carbon and nitrogen is deposited, such as MoCN or MoOCN.

公开(公告)号：US10087522B2

公开(公告)日：2018-10-02

申请号：US15135224

申请日：2016-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Eric Shero ,  Suvi Haukka ,  Robert Brennan Milligan ,  Michael Eugene Givens

IPC: C23C16/38 ,  C23C16/455

Abstract: A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.

公开(公告)号：US20170306479A1

公开(公告)日：2017-10-26

申请号：US15135258

申请日：2016-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Eric Shero ,  Suvi Haukka ,  Robert Brennan Milligan ,  Michael Eugene Givens

IPC: C23C16/38 ,  C23C16/455 ,  C23C16/42

CPC classification number: C23C16/38 ,  C23C16/42 ,  C23C16/45525

Abstract: A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a reducing precursor onto the substrate. A reaction between the metal halide precursor and the reducing precursor forms a metal film. Specifically, the method discloses forming a metal boride or a metal silicide film.

公开(公告)号：US20170025280A1

公开(公告)日：2017-01-26

申请号：US14808979

申请日：2015-07-24

Applicant: ASM IP Holding B.V.

Inventor： Robert Brennan Milligan

IPC: H01L21/285

CPC classification number: H01L21/28562 ,  H01L21/28088 ,  H01L21/32051

Abstract: A method for forming a Boron doped metallic film, such as Titanium Boron Nitride, is disclosed. The method allows for creation of the metallic film with a high work function and low resistivity, while limiting the increase in effective oxide thickness. The method comprises a thin metallic layer deposition step as well as a Boron-based gas pulse step. The Boron-based gas pulse deposits Boron and allows for the removal of excess halogens within the metallic film. The steps may be repeated in order to achieve a desired thickness of the metallic film.

Abstract translation: 公开了一种形成硼掺杂金属膜的方法，例如氮化钛氮化硼。 该方法允许产生具有高功函数和低电阻率的金属膜，同时限制有效氧化物厚度的增加。 该方法包括薄金属层沉积步骤以及基于硼的气体脉冲步骤。 硼基气体脉冲沉积硼并允许去除金属膜内的过量卤素。 可以重复这些步骤以实现所需的金属膜厚度。

公开(公告)号：US20150024609A1

公开(公告)日：2015-01-22

申请号：US13948055

申请日：2013-07-22

Applicant: ASM IP Holding B.V.

Inventor： Robert Brennan Milligan ,  Fred Alokozai

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01J37/32357 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45514 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32651 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/3145 ,  H01L21/67017 ,  H01L21/67069

Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.

Abstract translation: 一种处理室，包括具有处理区域的反应室，与处理区域连通的处理气体入口，与处理气体入口连通的第一激发物质生成区域和与处理气体入口连通的第二退出物质生成区域 。 一种处理衬底的方法，包括以下步骤：在处理区域内加载衬底，激活第一激发物种生成区以在第一脉冲期间向处理区域提供第一激发物质前体，以及激活第二激发物质产生区 在第二脉冲期间将不同于第一激发物质前体的第二激发物质前体提供给处理区域。

公开(公告)号：US20240420958A1

公开(公告)日：2024-12-19

申请号：US18740699

申请日：2024-06-12

Applicant: ASM IP Holding B.V.

Inventor： Venkata Surya Naga Raju Chava ,  Estiaque Haidar Shourov ,  Robert Brennan Milligan ,  Mojtaba Samiee ,  Balaji Kannan ,  Dong Li ,  Rajkumar Jakkaraju

IPC: H01L21/28 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02

Abstract: Methods, system and apparatus for semiconductor processing including supporting a substrate comprising one or more oxide layers disposed on the substrate on a substrate support in a first reaction chamber, contacting a top surface of the one or more oxide layers of the substrate with an excited species, supporting the substrate in a second reaction chamber and depositing a transition metal layer over the top surface subsequent to contacting the top surface with the excited species.

公开(公告)号：US11233133B2

公开(公告)日：2022-01-25

申请号：US16240392

申请日：2019-01-04

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Timo Asikainen ,  Robert Brennan Milligan

IPC: H01L29/49 ,  H01L21/285 ,  C23C16/32 ,  H01L21/02 ,  H01L21/3205 ,  C23C16/04 ,  C23C16/455 ,  H01L21/28 ,  H01L29/78

Abstract: Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.

公开(公告)号：US10211308B2

公开(公告)日：2019-02-19

申请号：US14919536

申请日：2015-10-21

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Timo Asikainen ,  Robert Brennan Milligan

IPC: H01L29/49 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/04 ,  C23C16/32 ,  C23C16/455 ,  H01L21/28 ,  H01L29/78

Abstract: Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.