公开(公告)号：US20180174826A1

公开(公告)日：2018-06-21

申请号：US15380909

申请日：2016-12-15

Applicant: ASM IP Holding B.V.

Inventor： Ivo Johannes Raaijmakers ,  Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel

IPC: H01L21/027 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02 ,  G03F7/20

CPC classification number: H01L21/0273 ,  C23C16/045 ,  C23C16/4412 ,  C23C16/4485 ,  C23C16/45523 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/52 ,  G03F7/2004 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/0337

Abstract: The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

公开(公告)号：US20250069885A1

公开(公告)日：2025-02-27

申请号：US18946444

申请日：2024-11-13

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/32 ,  H01L21/321 ,  H01L21/56 ,  H01L21/67 ,  H01L21/768 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

公开(公告)号：US12170197B2

公开(公告)日：2024-12-17

申请号：US17388773

申请日：2021-07-29

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/32 ,  H01L21/321 ,  H01L21/56 ,  H01L21/67 ,  H01L21/768 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

公开(公告)号：US20240175130A1

公开(公告)日：2024-05-30

申请号：US18523021

申请日：2023-11-29

Applicant: ASM IP Holding B.V.

Inventor： Hichem M’Saad ,  Ivo Johannes Raaijmakers ,  Xing Lin ,  Wentao Wang ,  Herbert Terhorst

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/67 ,  H01L21/677

CPC classification number: C23C16/45546 ,  C23C16/4412 ,  C23C16/45553 ,  C23C16/45565 ,  H01L21/67098 ,  H01L21/67201 ,  H01L21/67248 ,  H01L21/67742

Abstract: Methods and systems for growing silicon carbide epitaxial layers are described. In one example, a reactor system with multiple reactor modules may include a heating load/lock chamber and a cooling load/lock chamber. In another example, a reactor may be heated by separate sets of coils inductively heating a susceptor, which heats graphite near one or more wafers. Multiple pyrometers may measure the temperature of the graphite walls at different locations. Based on temperature differences and/or temperature gradients, a temperature controller may adjust power provided to one or more sets of coils. In yet another example, separations between a wafer carrier and a wafer may be adjusted.

公开(公告)号：US20240047197A1

公开(公告)日：2024-02-08

申请号：US18491428

申请日：2023-10-20

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Hub Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie ,  Viljami J. Pore

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/0228 ,  H01L21/02669 ,  H01L21/324 ,  H01L21/67213 ,  H01L21/02315 ,  H01L21/02068 ,  H01L21/02178 ,  H01L21/02118

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US11830732B2

公开(公告)日：2023-11-28

申请号：US17470177

申请日：2021-09-09

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Hub Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie ,  Viljami Pore

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/0228 ,  H01L21/02068 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/02315 ,  H01L21/02669 ,  H01L21/324 ,  H01L21/67213

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US20210013037A1

公开(公告)日：2021-01-14

申请号：US16922520

申请日：2020-07-07

Applicant: ASM IP Holding B.V.

Inventor： Yiting Sun ,  David de Roest ,  Daniele Piumi ,  Ivo Johannes Raaijmakers ,  BokHeon Kim ,  Timothee Blanquart ,  Yoann Tomczak

IPC: H01L21/033 ,  H01L21/311 ,  G03F7/20 ,  G03F7/38

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.