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公开(公告)号：US06566271B1
公开(公告)日：2003-05-20
申请号：US09671827
申请日：2000-09-27
申请人： Alexander Gschwandtner , Gudrun Innertsberger , Andreas Grassl , Barbara Fröschle , Martin Kerber , Alexander Mattheus
发明人： Alexander Gschwandtner , Gudrun Innertsberger , Andreas Grassl , Barbara Fröschle , Martin Kerber , Alexander Mattheus
IPC分类号： H01L21302
CPC分类号： H01L21/02046 , H01L21/306
摘要： Fluorine is deposited on a semiconductor substrate surface according to a novel process. A semiconductor substrate is placed in a reaction chamber and the substrate surface is wetted with water and/or alcohol. A compound containing fluorine is led to the substrate surface, so that a cleaned semiconductor surface covered with fluorine is produced, and the compound containing fluorine is removed from the reaction chamber. The cleaned semiconductor surface covered with fluorine is then wetted with a mixture containing at least 10% by volume of water and at least 10% by volume of alcohol, for producing a cleaned semiconductor surface covered with a predetermined amount of fluorine. The predetermined amount of fluorine is lower the higher a proportion of water in the mixture is chosen to be. Then, the water and the alcohol are removed from the semiconductor surface.
摘要翻译： 根据新颖的方法将氟沉积在半导体衬底表面上。 将半导体衬底放置在反应室中，并用水和/或醇润湿衬底表面。 含有氟的化合物被引导到基板表面，从而产生被氟覆盖的清洁的半导体表面，并且从反应室中除去含氟化合物。 然后用含有至少10体积％水和至少10体积％醇的混合物润湿被氟覆盖的清洁的半导体表面，以产生用预定量的氟覆盖的清洁的半导体表面。 选择混合物中水的比例越高，预定量的氟越低。 然后，从半导体表面除去水和醇。
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公开(公告)号：US06559005B2
公开(公告)日：2003-05-06
申请号：US09924072
申请日：2001-08-07
IPC分类号： H01L218242
CPC分类号： H01L27/1087 , H01L28/84
摘要： The method according to the invention enables the roughness of an HSG surface to be substantially transferred to the surface of an electrode. The electrode consequently acquires a microstructured surface, the area of which can be increased by more than 25%, preferably by more than 50% and particularly preferably by more than 100%. An HSG layer is used to locally mask the electrode surface or the sacrificial layer. Subsequent structuring processes, such as for example wet-chemical and/or plasma-assisted etching processes, nitriding or oxidation processes, make it possible—working on the basis of micromasking effects—to significantly roughen the electrode surface and thereby to increase the electrode surface area.
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公开(公告)号：US5874366A
公开(公告)日：1999-02-23
申请号：US863371
申请日：1997-05-27
IPC分类号： H01L21/306 , H01L21/00
CPC分类号： H01L21/02052
摘要： The method and system of the invention allow etching even relatively thick layers on the rear side of a semiconductor substrate where the front side is resist-free. An etching solution is sprayed in fine droplets onto the rear side of the semiconductor substrate. The semiconductor substrate may thereby be heated to a temperature .ltoreq.100.degree. C.
摘要翻译： 本发明的方法和系统允许在半导体衬底的背面没有抗蚀剂的情况下蚀刻甚至相当厚的层。 蚀刻溶液以细小的液滴喷射到半导体衬底的后侧。 因此可以将半导体衬底加热到100℃的温度。
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公开(公告)号：US5281302A
公开(公告)日：1994-01-25
申请号：US4528
申请日：1993-01-14
IPC分类号： C23F4/00 , C23C16/44 , C23G5/00 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/31 , B44C1/22 , B29C37/00 , C03C15/00 , C03C25/06
CPC分类号： C23G5/00 , C23C16/4405
摘要： For cleaning parasitic layers of silicon oxides or nitrides in a reaction chamber, an etching gas mixture is employed in which at least one fluoridated carbon, particularly CF.sub.4 and/or C.sub.2 F.sub.6, is the main constituent. Then, an ozone/oxygen mixture (O.sub.3 /O.sub.2) having optimally high ozone concentration is added to the reaction chamber. The etching gas mixture is excited in the reaction chamber by triggering the etching gas mixture to form a plasma, having extremely low power with an excitation frequency in the RF range. The etching gas mixture etches all surfaces in the reaction chambers free of residues with a high etching rate.
摘要翻译： 为了清除反应室中的氧化硅或氮化物的寄生层，使用至少一种氟化碳，特别是CF 4和/或C 2 F 6作为主要成分的蚀刻气体混合物。 然后，将具有最高臭氧浓度的臭氧/氧气混合物（O 3 / O 2）加入到反应室中。 通过触发蚀刻气体混合物形成等离子体，在反应室中激发蚀刻气体混合物，其功率极低，在RF范围内具有激发频率。 蚀刻气体混合物以高蚀刻速率蚀刻反应室中没有残留物的所有表面。
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公开(公告)号：US09252011B2
公开(公告)日：2016-02-02
申请号：US14131943
申请日：2012-07-12
IPC分类号： H01L21/31 , H01L21/02 , C23C8/10 , C23C8/36 , C23C8/38 , H01J37/32 , H01L21/67 , H01L31/0216 , H01L31/18
CPC分类号： H01L21/02238 , C23C8/10 , C23C8/36 , C23C8/38 , H01J37/32192 , H01J37/3222 , H01L21/02164 , H01L21/02252 , H01L21/67115 , H01L31/02167 , H01L31/18 , Y02E10/50
摘要： A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.
摘要翻译： 描述了在衬底上形成氧化物层的方法，其中通过来自含氧气体的微波在邻近于衬底的至少一个表面处产生等离子体，其中微波通过磁控管通过 至少一个微波棒，其布置成与衬底相对并且包括外部导体和内部导体。 在形成氧化物层期间，将平均微波功率密度设定为P = 0.8-10W / cm 2，将等离子体持续时间设定为t = 0.1〜600s，将压力设定为p = 2.67-266.64Pa（ 20〜2000mTorr），将基板表面与微波棒之间的距离设定为d = 5-120mm。 上述和潜在的另外的工艺条件彼此匹配，使得衬底保持在低于200℃的温度，并且在面向等离子体的衬底的表面上诱导氧化物生长。
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16.发明申请公开(公告)号：US20100322827A1
公开(公告)日：2010-12-23
申请号：US12867594
申请日：2009-02-10
IPC分类号： B01D53/34
CPC分类号： B01D53/323 , B01D2257/204 , B01D2258/0216 , B01D2259/806 , B01D2259/818 , H05H1/46 , H05H2001/463 , H05H2245/1215
摘要： In order to clean the waste gases from a processing system (1), in which a process using non-metal halide is carried out, the waste gas (3) is mixed with a gas (7) that prevents recombination of ionized particles formed from the non-metal fluoride. In a gas discharge chamber (25), the waste gas (3, 7) is then converted into a plasma in which the non-metal halide, present in the waste gas (3, 7), is ionized. The ionized particles, that have been saturated with the gas, prevent the recombination thereof and can then be removed from the waste gas.
摘要翻译： 为了清洁来自使用非金属卤化物的方法的处理系统（1）中的废气，废气（3）与气体（7）混合，气体（7）防止由 非金属氟化物。 在气体放出室（25）中，然后将废气（3,7）转化成等离子体，其中存在于废气（3,7）中的非金属卤化物被离子化。 已经被气体饱和的电离颗粒阻止其复合，然后可以从废气中除去。
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公开(公告)号：US20090122460A1
公开(公告)日：2009-05-14
申请号：US11938436
申请日：2007-11-12
CPC分类号： H01G4/008 , H01G4/1254 , H01G9/0525 , H01G9/07 , H01G9/15 , H01L21/76877 , H01L28/84
摘要： A semiconductor device includes a semiconductor layer with a first electrode formed by a sintered, conductive, porous granulate and formed in or on the semiconductor layer or in or on at least one insulating layer arranged on the semiconductor layer; furthermore dielectric material covering the surface of the sintered, conductive, porous granulate, and a second electrode at least partially covering the dielectric material, wherein the dielectric material electrically insulates the second electrode from the first electrode.
摘要翻译： 半导体器件包括具有第一电极的半导体层，该第一电极由烧结导电多孔颗粒形成并形成在半导体层中或半导体层上或布置在半导体层上的至少一个绝缘层中或其上; 还包括覆盖烧结的，导电的，多孔的颗粒的表面的电介质材料和至少部分地覆盖介电材料的第二电极，其中介电材料使第二电极与第一电极电绝缘。
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18.发明申请公开(公告)号：US20070227451A1
公开(公告)日：2007-10-04
申请号：US11705824
申请日：2007-02-14
IPC分类号： C23C16/00
CPC分类号： H01J37/32724 , H01J37/3222 , H01J37/32541
摘要： A device for generating excited and/or ionized particles in a plasma made of a process gas, having an inner chamber, which is implemented as cylindrical and in which a plasma zone may be generated, a coaxial internal conductor, a coaxial external conductor, an inlet, using which process gas may be supplied into the inner chamber, and an outlet using which process gas may be discharged from the inner chamber, wherein the coaxial internal conductor at least partially has a curved shape.
摘要翻译： 一种用于在由处理气体制成的等离子体中产生激发和/或离子化颗粒的装置，其具有实现为圆柱形并且可以产生等离子体区域的内室，同轴内部导体，同轴外部导体， 入口，使用哪个工艺气体可以被供应到内部室中，以及出口，使用哪个处理气体可以从内部室排出，其中同轴内部导体至少部分地具有弯曲的形状。
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19.发明申请Apparatus for generating excited and/or ionized particles in a plasma and a method for generating ionized particles 有权用于在等离子体中产生激发和/或离子化颗粒的装置和用于产生电离颗粒的方法公开(公告)号：US20060290301A1
公开(公告)日：2006-12-28
申请号：US11450871
申请日：2006-06-12
申请人： Alexander Gschwandtner , Josef Mathuni , Alexander Mattheus , Stephan Schneider , Jurgen Sellmaier , Heinz Steinhardt
发明人： Alexander Gschwandtner , Josef Mathuni , Alexander Mattheus , Stephan Schneider , Jurgen Sellmaier , Heinz Steinhardt
IPC分类号： H05H7/00
CPC分类号： H01J37/32192 , H05H1/30
摘要： An apparatus is described for generating excited and/or ionized particles in a plasma with a generator for generating an electromagnetic wave and an excitation chamber with a plasma zone in which the excited and/or ionized particles are formed. At least one excitation chamber is arranged in an insulating material off-center relative to a ring-cylindrical outer conductor.
摘要翻译： 描述了一种用于产生电磁波的发生器的等离子体中产生激发和/或离子化的颗粒的装置，以及具有形成激发和/或离子化的颗粒的等离子体区域的激发室。 至少一个激励室相对于环形圆柱形外部导体偏心地布置在绝缘材料中。
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公开(公告)号：US06706141B1
公开(公告)日：2004-03-16
申请号：US09625200
申请日：2000-07-21
IPC分类号： H05H100
CPC分类号： H01J37/32229 , H01J37/32357 , H05H1/46
摘要： A device to generate excited and/or ionized particles in plasma with a generator to generate an electromagnetic wave and at least one plasma zone, in which the excited and/or ionized particles are formed by the electromagnetic wave. The plasma zone is formed in an interior chamber of a conductor for the electromagnetic wave.
摘要翻译： 一种用发生器产生等离子体中的激发和/或电离粒子以产生电磁波和至少一个等离子体区域的装置，其中激发和/或离子化的颗粒由电磁波形成。 等离子体区域形成在用于电磁波的同轴导体的内部室中。
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