公开(公告)号：US20110241085A1

公开(公告)日：2011-10-06

申请号：US12751891

申请日：2010-03-31

申请人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

发明人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

IPC分类号： H01L29/78 ,  H01L21/311

CPC分类号： H01L29/4983 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.

摘要翻译： 提供了具有双侧壁间隔件和成形方法的半导体器件。 该方法包括：在图案化结构上沉积第一间隔层，第一间隔层具有在衬底的表面的界面区附近传播穿过第一间隔层的厚度的接缝和图案化结构的侧壁，蚀刻 第一间隔层，以在界面区域处形成残留间隔物，其中残余间隔物涂覆小于图案化结构的侧壁的整体，在剩余间隔物上和在图案化结构的侧壁上沉积第二间隔层， 所述剩余间隔物，所述第二间隔层在所述残余间隔物的接缝上是无缝的，并且蚀刻所述第二间隔层以形成涂覆所述剩余间隔物并涂覆未被所述残留间隔物涂覆的所述图案化结构的侧壁的第二间隔物。

公开(公告)号：US07910494B2

公开(公告)日：2011-03-22

申请号：US11277814

申请日：2006-03-29

申请人： Anthony Dip ,  Eric J. Malstrom

发明人： Anthony Dip ,  Eric J. Malstrom

IPC分类号： H01L21/31 ,  C30B23/03

CPC分类号： H01L21/0214 ,  C30B25/14 ,  C30B31/16 ,  C30B35/00 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/324 ,  H01L21/67109 ,  Y10S438/935

摘要： A gas delivery system for supplying a process gas from a gas supply to a thermal processing furnace, a thermal processing furnace equipped with the gas delivery system, and methods for delivering process gas to a thermal processing furnace. The gas delivery system comprises a plurality of regulators, such as mass flow controllers, in a process gas manifold coupling a gas supply with a thermal processing furnace. The regulators establish a corresponding plurality of flows of a process gas at a plurality of flow rates communicated by the process gas manifold to the thermal processing furnace. The gas delivery system may be a component of the thermal processing furnace that further includes a liner that surrounds a processing space inside the thermal processing furnace.

摘要翻译： 一种用于将气体从气体供给到热处理炉的气体输送系统，配备有气体输送系统的热处理炉，以及将处理气体输送到热处理炉的方法。 气体输送系统包括多个调节器，例如质量流量控制器，其在将气体供应与热处理炉连接的工艺气体歧管中。 调节器以工艺气体歧管连接到热处理炉的多个流速建立相应的多个工艺气体流。 气体输送系统可以是热处理炉的组件，其还包括围绕热处理炉内的处理空间的衬套。

公开(公告)号：US07524769B2

公开(公告)日：2009-04-28

申请号：US11094462

申请日：2005-03-31

申请人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

IPC分类号： H01L21/302

CPC分类号： H01L21/02046 ,  C23C16/0245 ,  C23C16/46 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/3185 ,  H01L21/76814

摘要： A method and system for processing a substrate includes providing the substrate in a process chamber, where the substrate contains an oxide layer formed thereon, exciting a hydrogen-containing gas in a remote plasma source coupled to the process chamber, and exposing the substrate to a flow of the excited hydrogen-containing gas at a first substrate temperature lower than about 900° C. to remove the oxide layer from the substrate. The substrate is then maintained at a second temperature different than the first substrate temperature, and a silicon-containing film is formed on the substrate at the second substrate temperature.

摘要翻译： 用于处理衬底的方法和系统包括在处理室中提供衬底，其中衬底包含其上形成的氧化物层，激发耦合到处理室的远程等离子体源中的含氢气体，并将衬底暴露于 在低于约900℃的第一衬底温度下激发含氢气体的流动，以从衬底去除氧化物层。 然后将衬底保持在不同于第一衬底温度的第二温度，并且在第二衬底温度下在衬底上形成含硅膜。

公开(公告)号：US07405140B2

公开(公告)日：2008-07-29

申请号：US11206059

申请日：2005-08-18

申请人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

IPC分类号： H01L21/36 ,  H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/32135

摘要： A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non-epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.

摘要翻译： 一种在低温下在半导体结构上有选择地形成外延含Si膜的方法。 该方法包括在处理室中提供结构，该结构包含具有外延Si表面积的Si衬底和其上的图案化膜区域。 将Si膜非选择性地沉积到该结构上，该Si膜包含沉积在外延Si表面上的外延Si膜和沉积在图案化膜的暴露表面上的非外延Si膜。 非外延Si膜被选择性地干蚀刻去除以形成图案化的外延Si膜。 Si膜可以是SiGe膜。

公开(公告)号：US20080035055A1

公开(公告)日：2008-02-14

申请号：US11463180

申请日：2006-08-08

申请人： Anthony Dip ,  Shinji Asari ,  Meenakshisundaram Gandhi

发明人： Anthony Dip ,  Shinji Asari ,  Meenakshisundaram Gandhi

IPC分类号： C23C16/00

CPC分类号： H01L21/67109 ,  C23C16/45578 ,  C23C16/45591 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67115

摘要： A thermal processing system with improved gas flow and method for injecting a process gas into a thermal processing system. The thermal processing system has an injection section with injection outlets that inject process gas into a processing space and a delivery section that delivers process gas to the injection section. The delivery section may be coupled with the injection section at an inlet disposed between opposite ends of the injection section. A fluid lumen of the injection section may have a larger cross-sectional area than a fluid lumen of the delivery section. The thermal processing system may include an inner tube, which surrounds the processing space, having a slit through which the processing space communicates with an annular pumping space defined between the inner tube and an outer tube of the thermal processing system.

摘要翻译： 具有改善气流的热处理系统和将工艺气体注入热处理系统的方法。 热处理系统具有注射部分，其具有将处理气体注入处理空间的注射出口和将处理气体输送到注射部分的输送部分。 输送部分可以在设置在喷射部分的相对端之间的入口处与喷射部分联接。 注射部分的流体腔可以具有比输送部的流体腔更大的横截面面积。 热处理系统可以包括围绕处理空间的内管，其具有狭缝，处理空间通过狭缝与限定在热处理系统的内管和外管之间的环形泵送空间连通。

公开(公告)号：US07202186B2

公开(公告)日：2007-04-10

申请号：US10630970

申请日：2003-07-31

申请人： David L O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

发明人： David L O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  C23C16/308 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L21/67098 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.

摘要翻译： 使用低压处理形成超薄氧氮化物层，以实现衬底的自限制氧化并提供超薄氧氮化物。 要处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层或氮化物层，或者可以缺少初始介电层。 处理可以使用间歇式处理室或单晶片处理室进行。

公开(公告)号：US20070048956A1

公开(公告)日：2007-03-01

申请号：US11213871

申请日：2005-08-30

申请人： Anthony Dip ,  Seungho Oh ,  Allen Leith

发明人： Anthony Dip ,  Seungho Oh ,  Allen Leith

IPC分类号： H01L21/331

CPC分类号： C30B25/165 ,  C23C16/24 ,  C23C16/30 ,  C23C16/45523 ,  C30B29/06 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636

摘要： A method is provided for selectively forming a Si-containing film on a substrate in an interrupted deposition process. The method includes providing a substrate containing a growth surface and a non-growth surface, and selectively forming the Si-containing film on the growth surface by exposing the substrate to HX gas while simultaneously exposing the substrate to a pulse of chlorinated silane gas. The Si-containing film can be a Si film or a SiGe film that is selectively formed on a Si or SiGe growth surface but not on an oxide, nitride, or oxynitride non-growth surface.

摘要翻译： 提供了一种在中断沉积工艺中在衬底上选择性地形成含Si膜的方法。 该方法包括提供含有生长表面和非生长表面的基底，并且通过将基底暴露于HX气体同时将基底暴露于氯化硅烷气体脉冲，从而在生长表面上选择性地形成含Si膜。 含Si膜可以是选择性地在Si或SiGe生长表面上形成但不在氧化物，氮化物或氮氧化物非生长表面上的Si膜或SiGe膜。

公开(公告)号：US20070042569A1

公开(公告)日：2007-02-22

申请号：US11206059

申请日：2005-08-18

申请人： Anthony Dip ,  Allen Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen Leith ,  Seungho Oh

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/32135

摘要： A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non-epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.

摘要翻译： 一种在低温下在半导体结构上有选择地形成外延含Si膜的方法。 该方法包括在处理室中提供结构，该结构包含具有外延Si表面积的Si衬底和其上的图案化膜区域。 将Si膜非选择性地沉积到该结构上，该Si膜包含沉积在外延Si表面上的外延Si膜和沉积在图案化膜的暴露表面上的非外延Si膜。 非外延Si膜被选择性地干蚀刻去除以形成图案化的外延Si膜。 Si膜可以是SiGe膜。

公开(公告)号：US07165011B1

公开(公告)日：2007-01-16

申请号：US11217230

申请日：2005-09-01

申请人： Sanjeev Kaushal ,  Pradeep Pandey ,  Kenji Sugishima ,  Anthony Dip ,  David Smith ,  Raymond Joe ,  Sundar Gandhi

发明人： Sanjeev Kaushal ,  Pradeep Pandey ,  Kenji Sugishima ,  Anthony Dip ,  David Smith ,  Raymond Joe ,  Sundar Gandhi

IPC分类号： G06F11/30 ,  G06F15/00

CPC分类号： H01L22/10 ,  G05B23/0254 ,  H01L21/67248

摘要： A method of monitoring a thermal processing system in real-time using a built-in self test (BIST) table that includes positioning a plurality of wafers in a processing chamber in the thermal processing system; executing a real-time dynamic model to generate a predicted dynamic process response for the processing chamber during the processing time; creating a first measured dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the measured dynamic process response; and comparing the dynamic estimation error to operational thresholds established by one or more rules in the BIST table.

摘要翻译： 一种使用内置自检（BIST）表实时监测热处理系统的方法，其包括将多个晶片定位在热处理系统中的处理室中; 执行实时动态模型以在处理时间期间为处理室生成预测的动态过程响应; 创建第一个测量动态过程响应; 使用预测的动态过程响应和测量的动态过程响应之间的差来确定动态估计误差; 以及将动态估计误差与由BIST表中的一个或多个规则建立的操作阈值进行比较。

公开(公告)号：US20120003825A1

公开(公告)日：2012-01-05

申请号：US12830210

申请日：2010-07-02

申请人： Anthony Dip

发明人： Anthony Dip

IPC分类号： H01L21/20

CPC分类号： H01L21/02661 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02664

摘要： A method for forming strained epitaxial carbon-doped silicon (Si) films, for example as raised source and drain regions for electronic devices. The method includes providing a structure having an epitaxial Si surface and a patterned film, non-selectively depositing a carbon-doped Si film onto the structure, the carbon-doped Si film containing an epitaxial carbon-doped Si film deposited onto the epitaxial Si surface and a non-epitaxial carbon-doped Si film deposited onto the patterned film, and non-selectively depositing a Si film on the carbon-doped Si film, the Si film containing an epitaxial Si film deposited onto the epitaxial carbon-doped Si film and a non-epitaxial Si film deposited onto the non-epitaxial carbon-doped Si film. The method further includes dry etching away the non-epitaxial Si film, the non-epitaxial carbon-doped Si film, and less than the entire epitaxial Si film to form a strained epitaxial carbon-doped Si film on the epitaxial Si surface.

摘要翻译： 用于形成应变外延碳掺杂硅（Si）膜的方法，例如用于电子器件的升高的源极和漏极区域。 该方法包括提供具有外延Si表面和图案化膜的结构，在结构上非选择性地沉积掺杂碳的Si膜，所述掺杂碳的Si膜含有沉积到外延Si表面上的外延碳掺杂的Si膜 以及沉积到图案化膜上的非外延碳掺杂Si膜，并且在掺碳的Si膜上非选择性地沉积Si膜，所述Si膜含有沉积到外延碳掺杂的Si膜上的外延Si膜，以及 沉积在非外延碳掺杂Si膜上的非外延Si膜。 该方法还包括干蚀刻去除非外延Si膜，非外延碳掺杂Si膜，并且小于整个外延Si膜以在外延Si表面上形成应变外延碳掺杂Si膜。