公开(公告)号：US07964441B2

公开(公告)日：2011-06-21

申请号：US11693891

申请日：2007-03-30

申请人： Raymond Joe ,  Meenakshisundaram Gandhi

发明人： Raymond Joe ,  Meenakshisundaram Gandhi

IPC分类号： H01L51/40

CPC分类号： C23C16/45534 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45536

摘要： A method is provided for low temperature catalyst-assisted atomic layer deposition of silicon-containing films such as SiO2 and SiN. The method includes exposing a substrate surface containing X—H functional groups to a first R1—X—R2 catalyst and a gas containing silicon and chlorine to form an X/silicon/chlorine complex on the surface, and forming a silicon-X layer terminated with the X—H functional groups by exposing the X/silicon/chlorine complex on the substrate surface to a second R1—X—R2 catalyst and a X—H functional group precursor. The method further includes one or more integrated in-situ reactive treatments that reduce or eliminate the need for undesired high-temperature post-deposition processing. One reactive treatment includes hydrogenating unreacted X—H functional groups and removing carbon and chlorine impurities from the substrate surface. Another reactive treatment saturates the silicon-X layer with additional X—H functional groups.

摘要翻译： 提供了一种用于低温催化剂辅助原子层沉积诸如SiO 2和SiN的含硅膜的方法。 该方法包括将含有X-H官能团的衬底表面暴露于第一R1-X-R2催化剂和含有硅和氯的气体，以在表面上形成X /硅/氯络合物，并形成硅-X层终止 通过将X /硅/氯络合物在基材表面上暴露于第二个R1-X-R2催化剂和X-H官能团前体，与X-H官能团一起使用。 该方法还包括一种或多种集成的原位反应处理，其减少或消除对不期望的高温后沉积处理的需要。 一种反应处理包括氢化未反应的X-H官能团并从基底表面除去碳和氯杂质。 另一种反应性处理使具有另外的X-H官能团的硅-X层饱和。

公开(公告)号：US20070105392A1

公开(公告)日：2007-05-10

申请号：US11269007

申请日：2005-11-08

申请人： Raymond Joe

发明人： Raymond Joe

IPC分类号： C23F1/00 ,  H01L21/302 ,  H01L21/461 ,  B44C1/22

CPC分类号： G03F7/427 ,  H01J37/32357 ,  H01J2237/3342 ,  H01L21/31138

摘要： Photoresist stripping is provided that employs batch processing to maximize throughput and an upstream plasma activation source using vapor or gas processing to efficiently create reactive species and minimize chemical consumption. An upstream plasma activation source efficiently creates reactive species remote from the photoresist on the substrate surfaces. Either a remote plasma generator upstream of the processing chamber or an integrated plasma unit within the processing chamber upstream of the processing volume may be used. Plasma processing gas is introduced from a side of a stack of wafers and flows across the wafers. Processing gas may be forced across the surfaces of the wafers in the column to an exhaust on the opposite side of the column, and the column may be rotated. An upstream plasma activation source enables a strip process to occur at low temperatures, for example below 600 degrees C., which are particularly advantageous in BEOL process flow. Integrated processes that combine dry and wet-like sequential processes are also provided. Oxidizing, reducing or fluorine-containing plasma can be employed. Wet stripping, using, for example, wafer vapor or ozone or both may be included, simultaneously or sequentially.

摘要翻译： 提供光阻剥离，其使用批处理以最大化产量和使用蒸汽或气体处理的上游等离子体激活源以有效地产生反应性物质并最小化化学消耗。 上游等离子体激活源有效地产生远离基板表面上的光致抗蚀剂的反应物质。 可以使用处理室上游的远程等离子体发生器或处理室上游的处理室内的集成等离子体单元。 等离子体处理气体从晶片堆的一侧引入并流过晶片。 处理气体可以被迫穿过柱中的晶片的表面到柱的相对侧上的排气，并且柱可以旋转。 上游等离子体激活源使得剥离过程能够在低温下发生，例如低于600℃，这在BEOL工艺流程中是特别有利的。 还提供了结合干式和湿式顺序方法的综合方法。 可以使用氧化还原剂或含氟等离子体。 可以同时或依次包括使用例如晶片蒸气或臭氧或两者的湿式剥离。

公开(公告)号：US08012859B1

公开(公告)日：2011-09-06

申请号：US12751774

申请日：2010-03-31

申请人： Raymond Joe ,  Meenakshisundaram Gandhi

发明人： Raymond Joe ,  Meenakshisundaram Gandhi

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  C23C16/0227 ,  C23C16/24 ,  C23C16/45527 ,  C23C16/45546 ,  H01L21/0237 ,  H01L21/02573 ,  H01L21/0262

摘要： A method is provided for depositing silicon and silicon-containing films by atomic layer deposition (ALD). The method includes disposing the substrate in a batch processing system configured for performing ALD of the silicon-containing film, exposing the substrate to a non-saturating amount of a first precursor containing silicon, and evacuating or purging the first precursor from the batch processing system. The method further includes exposing the substrate to a saturating amount of a second precursor containing silicon or a dopant, where only one of the first and second precursors contain a halogen, and a reaction of the first and second precursors on the substrate forms a silicon or silicon-containing film and a volatile hydrogen-halogen (HX) by-product, evacuating or purging the second precursor and the HX by-product from the batch processing system, and repeating the exposing and evacuation or purging steps until the silicon or silicon-containing film has a desired thickness.

摘要翻译： 提供了通过原子层沉积（ALD）沉积硅和含硅膜的方法。 该方法包括将衬底设置在配置用于执行含硅膜的ALD的间歇处理系统中，将衬底暴露于非饱和量的含硅的第一前体，以及从批处理系统抽空或清除第一前体 。 该方法还包括将衬底暴露于含有硅或掺杂剂的饱和量的第二前体，其中第一和第二前体中只有一个含有卤素，并且衬底上的第一和第二前体的反应形成硅或 含硅膜和挥发性氢 - 卤素（HX）副产物，从间歇处理系统排出或吹扫第二前体和HX副产物，并重复曝光和排空或吹扫步骤，直到硅或硅 - 含有膜的膜具有期望的厚度。

公开(公告)号：US20080210273A1

公开(公告)日：2008-09-04

申请号：US12117981

申请日：2008-05-09

申请人： Raymond Joe

发明人： Raymond Joe

IPC分类号： B08B6/00

CPC分类号： G03F7/427 ,  H01J37/32357 ,  H01J2237/3342 ,  H01L21/31138

摘要： Photoresist stripping is provided that employs batch processing to maximize throughput and an upstream plasma activation source using vapor or gas processing to efficiently create reactive species and minimize chemical consumption. An upstream plasma activation source efficiently creates reactive species remote from the photoresist on the substrate surfaces. Either a remote plasma generator upstream of the processing chamber or an integrated plasma unit within the processing chamber upstream of the processing volume may be used. Plasma processing gas is introduced from a side of a stack of wafers and flows across the wafers. Processing gas may be forced across the surfaces of the wafers in the column to an exhaust on the opposite side of the column, and the column may be rotated. An upstream plasma activation source enables a strip process to occur at low temperatures, for example below 600 degrees C., which are particularly advantageous in BEOL process flow. Integrated processes that combine dry and wet-like sequential processes are also provided. Oxidizing, reducing or fluorine-containing plasma can be employed. Wet stripping, using, for example, wafer vapor or ozone or both may be included, simultaneously or sequentially.

摘要翻译： 提供光阻剥离，其使用批处理以最大化产量和使用蒸汽或气体处理的上游等离子体激活源以有效地产生反应性物质并最小化化学消耗。 上游等离子体激活源有效地产生远离基板表面上的光致抗蚀剂的反应物质。 可以使用处理室上游的远程等离子体发生器或处理室上游的处理室内的集成等离子体单元。 等离子体处理气体从晶片堆的一侧引入并流过晶片。 处理气体可以被迫穿过柱中的晶片的表面到柱的相对侧上的排气，并且柱可以旋转。 上游等离子体激活源使得剥离过程能够在低温下发生，例如低于600℃，这在BEOL工艺流程中是特别有利的。 还提供了结合干式和湿式顺序方法的综合方法。 可以使用氧化还原剂或含氟等离子体。 可以同时或依次包括使用例如晶片蒸气或臭氧或两者的湿式剥离。

公开(公告)号：US07326655B2

公开(公告)日：2008-02-05

申请号：US11237866

申请日：2005-09-29

申请人： Raymond Joe

发明人： Raymond Joe

IPC分类号： H01L21/31

CPC分类号： H01L21/76801 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/28211 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517

摘要： A method for forming an oxide layer on a substrate. The method includes exposing a process gas containing H2, an oxygen-containing gas, and a halogen-containing oxidation accelerant gas to the substrate, where the process chamber is maintained at a subatmospheric pressure, and forming an oxide layer through thermal oxidization of the substrate by the process gas. According to one embodiment of the invention, the substrate can be maintained at a temperature between about 150° C. and about 900° C. A microstructure containing an oxide layer is described, where the oxide layer can be a gate dielectric oxide layer or an interface oxide layer integrated with a high-k layer.

摘要翻译： 在基板上形成氧化物层的方法。 该方法包括将含有H 2 O 2的含氧气体和含卤素的氧化促进剂气体的处理气体暴露于基底，其中处理室保持在低于大气压的压力下，并形成 氧化层通过工艺气体对衬底进行热氧化。 根据本发明的一个实施方案，可以将基底保持在约150℃至约900℃的温度。描述了包含氧化物层的微结构，其中氧化物层可以是栅极电介质氧化物层或 界面氧化层与高k层集成。

公开(公告)号：US20080241358A1

公开(公告)日：2008-10-02

申请号：US11693891

申请日：2007-03-30

申请人： Raymond Joe ,  Meenakshisundaram Gandhi

发明人： Raymond Joe ,  Meenakshisundaram Gandhi

IPC分类号： B05D5/12

CPC分类号： C23C16/45534 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45536

摘要： A method is provided for low temperature catalyst-assisted atomic layer deposition of silicon-containing films such as SiO2 and SiN. The method includes exposing a substrate surface containing X—H functional groups to a first R1—X—R2 catalyst and a gas containing silicon and chlorine to form an X/silicon/chlorine complex on the surface, and forming a silicon-X layer terminated with the X—H functional groups by exposing the X/silicon/chlorine complex on the substrate surface to a second R1—X—R2 catalyst and a X—H functional group precursor. The method further includes one or more integrated in-situ reactive treatments that reduce or eliminate the need for undesired high-temperature post-deposition processing. One reactive treatment includes hydrogenating unreacted X—H functional groups and removing carbon and chlorine impurities from the substrate surface. Another reactive treatment saturates the silicon-X layer with additional X—H functional groups.

摘要翻译： 提供了一种用于低温催化剂辅助原子层沉积诸如SiO 2和SiN的含硅膜的方法。 该方法包括将含有XH官能团的基底表面暴露于第一R 1 -XR 2 N 2催化剂和含有硅和氯的气体以形成X /硅/氯络合物 并且通过将衬底表面上的X /硅/氯络合物暴露于第二R 1 -XR 2 2上而形成用XH官能团封端的硅-X层， SUB>催化剂和XH官能团前体。 该方法还包括一种或多种集成的原位反应处理，其减少或消除对不期望的高温后沉积处理的需要。 一种反应处理包括氢化未反应的X-H官能团并从基底表面除去碳和氯杂质。 另一种反应性处理使具有另外的X-H官能团的硅-X层饱和。

公开(公告)号：US20070189356A1

公开(公告)日：2007-08-16

申请号：US11352919

申请日：2006-02-13

申请人： Jonathan Pettit ,  Raymond Joe

发明人： Jonathan Pettit ,  Raymond Joe

IPC分类号： G01K3/00 ,  G01N25/00

CPC分类号： H01L21/67288 ,  C23C16/4412 ,  C23C16/52 ,  H01L21/67248 ,  H01L21/67253

摘要： A system is provided for determining when the buildup of deposits in an exhaust line of a semiconductor wafer processing machine requires cleaning. Deposits in vacuum exhaust lines build up to where they eventually fail structurally, releasing particles that can contaminate equipment and processes. The time at which cleaning is required is often unpredictable, while frequent or early cleaning to avoid waiting too long unnecessarily reduces productivity. The invention provides for the monitoring of thermal properties on the inside of an exhaust line wall. Deposits cause changes in the monitored thermal properties. A heater and thermocouple can be used, for example, and the temperature at the thermocouple that is due to heat flow from the heater is measured. Buildups in the exhaust line affect heat flow to the sensor and are measurable as a decline in sensed temperature. Structural failure of the coating in the exhaust line leads to the eventual leveling off and fluctuation of the temperature measurement. Comparison or correlation of the sensed thermal property or a profile thereof with data stored under known exhaust line conditions is used to determine the condition of the exhaust line and signal when cleaning is most appropriate.

摘要翻译： 提供了一种系统，用于确定半导体晶片加工机的排气管线中的沉积物的积聚何时需要清洁。 真空排气管中的沉积物最终到达最终结构失效的地方，释放可能污染设备和工艺的颗粒。 需要清洁的时间通常是不可预知的，而频繁或早期清洁以避免等待太长时间不必要地降低生产率。 本发明提供了对排气管壁内部的热性能的监测。 沉积物导致监测的热性能发生变化。 例如，可以使用加热器和热电偶，并测量热电偶因加热器的热量而导致的温度。 排气管道中的积聚会影响到传感器的热流，并且可以随着感测温度的下降而被测量。 排气管中涂层的结构破坏导致最终的平整和温度测量的波动。 使用感测的热性质或其轮廓与在已知排气管线条件下存储的数据进行比较或相关性来确定排气管线的状况和清洁最合适时的信号。

公开(公告)号：US07387968B2

公开(公告)日：2008-06-17

申请号：US11269007

申请日：2005-11-08

申请人： Raymond Joe

发明人： Raymond Joe

IPC分类号： H01L21/302

CPC分类号： G03F7/427 ,  H01J37/32357 ,  H01J2237/3342 ,  H01L21/31138

摘要： Photoresist stripping is provided that employs batch processing to maximize throughput and an upstream plasma activation source using vapor or gas processing to efficiently create reactive species and minimize chemical consumption. An upstream plasma activation source efficiently creates reactive species remote from the photoresist on the substrate surfaces. Either a remote plasma generator upstream of the processing chamber or an integrated plasma unit within the processing chamber upstream of the processing volume may be used. Plasma processing gas is introduced from a side of a stack of wafers and flows across the wafers. Processing gas may be forced across the surfaces of the wafers in the column to an exhaust on the opposite side of the column, and the column may be rotated. An upstream plasma activation source enables a strip process to occur at low temperatures, for example below 600 degrees C., which are particularly advantageous in BEOL process flow. Integrated processes that combine dry and wet-like sequential processes are also provided. Oxidizing, reducing or fluorine-containing plasma can be employed. Wet stripping, using, for example, wafer vapor or ozone or both may be included, simultaneously or sequentially.

摘要翻译： 提供光阻剥离，其使用批处理以最大化产量和使用蒸汽或气体处理的上游等离子体激活源以有效地产生反应性物质并最小化化学消耗。 上游等离子体激活源有效地产生远离基板表面上的光致抗蚀剂的反应物质。 可以使用处理室上游的远程等离子体发生器或处理室上游的处理室内的集成等离子体单元。 等离子体处理气体从晶片堆的一侧引入并流过晶片。 处理气体可以被迫穿过柱中的晶片的表面到柱的相对侧上的排气，并且柱可以旋转。 上游等离子体激活源使得剥离过程能够在低温下发生，例如低于600℃，这在BEOL工艺流程中是特别有利的。 还提供了结合干式和湿式顺序方法的综合方法。 可以使用氧化还原剂或含氟等离子体。 可以同时或依次包括使用例如晶片蒸气或臭氧或两者的湿式剥离。

公开(公告)号：US20070072438A1

公开(公告)日：2007-03-29

申请号：US11237866

申请日：2005-09-29

申请人： Raymond Joe

发明人： Raymond Joe

IPC分类号： H01L29/78 ,  H01L21/473

CPC分类号： H01L21/76801 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/28211 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517

摘要： A method for forming an oxide layer on a substrate. The method includes exposing a process gas containing H2, an oxygen-containing gas, and a halogen-containing oxidation accelerant gas to the substrate, where the process chamber is maintained at a subatmospheric pressure, and forming an oxide layer through thermal oxidization of the substrate by the process gas. According to one embodiment of the invention, the substrate can be maintained at a temperature between about 150° C. and about 900° C. A microstructure containing an oxide layer is described, where the oxide layer can be a gate dielectric oxide layer or an interface oxide layer integrated with a high-k layer.

摘要翻译： 在基板上形成氧化物层的方法。 该方法包括将含有H 2 O 2的含氧气体和含卤素的氧化促进剂气体的处理气体暴露于基底，其中处理室保持在低于大气压的压力下，并形成 氧化层通过工艺气体对衬底进行热氧化。 根据本发明的一个实施方案，可以将基底保持在约150℃至约900℃的温度。描述了包含氧化物层的微结构，其中氧化物层可以是栅极电介质氧化物层或 界面氧化层与高k层集成。

公开(公告)号：US20060014399A1

公开(公告)日：2006-01-19

申请号：US10891301

申请日：2004-07-14

申请人： Raymond Joe

发明人： Raymond Joe

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02126 ,  C23C16/30 ,  C23C16/345 ,  C23C16/452 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3125 ,  H01L21/3185

摘要： A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate. The method includes providing a substrate in a process chamber, exciting a reactant gas in a remote plasma source, thereafter mixing the excited reactant gas with a silazane precursor gas, and depositing a silicon-nitrogen-containing film on the substrate from the excited gas mixture in a chemical vapor deposition process. In one embodiment of the invention, the reactant gas can contain a nitrogen-containing gas to deposit a SiCNH film. In another embodiment of the invention, the reactant gas can contain an oxygen-containing gas to deposit a SiCNOH film.