公开(公告)号：US20170062224A1

公开(公告)日：2017-03-02

申请号：US15234448

申请日：2016-08-11

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/08

CPC classification number: H01L21/28562 ,  C23C16/06 ,  C23C16/08 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28556 ,  H01L29/7869

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

Abstract translation: 处理方法包括将基底暴露于任选的成核促进剂，随后连续暴露包含金属卤化物化合物和第二反应气体的第一反应气体，以在基底上形成金属膜。

公开(公告)号：US20170016113A1

公开(公告)日：2017-01-19

申请号：US15210352

申请日：2016-07-14

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  David Knapp ,  Jeffrey W. Anthis

IPC: C23C16/455

CPC classification number: C23C16/45536 ,  C07F5/062 ,  C23C16/18 ,  C23C16/45553

Abstract: Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR3)2, M(XR3)3, M(XR3)4, M(XR3)5 and M(XR3)6, where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no β-H.

Abstract translation: 通过将基底表面暴露于第一前体和反应物来沉积含金属膜的方法，其中第一前体和反应物中的一种或多种包含具有通式M（XR 3）2， M（XR3）3，M（XR3）4，M（XR3）5和M（XR3）6，其中M选自Al，Ti，Ta，Zr，La，Hf，Ce，Zn，Cr ，Sn，V及其组合，每个X是C，Si和Ge中的一个或多个，并且每个R独立地是甲基或乙基，并且基本上不包含β-H。

公开(公告)号：US09449843B1

公开(公告)日：2016-09-20

申请号：US14734222

申请日：2015-06-09

Applicant: Applied Materials, Inc.

Inventor： Mikhail Korolik ,  Nitin K. Ingle ,  David Thompson ,  Jeffrey W. Anthis ,  David Knapp ,  Benjamin Schmiege

IPC: H01L21/3213

CPC classification number: H01L21/32135 ,  C23F1/12

Abstract: Methods of selectively etching metals and metal nitrides from the surface of a substrate are described. The etch selectively removes metals and metal nitrides relative to silicon-containing layers such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The etch removes material in a conformal manner by including an oxidation operation which creates a thin uniform metal oxide. The thin uniform metal oxide is then removed by exposing the metal oxide to a metal-halogen precursor in a substrate processing region. The metal oxide may be removed to completion and the etch may stop once the uniform metal oxide layer is removed. Etches described herein may be used to uniformly trim back material on high aspect ratio features which ordinarily show higher etch rates near the opening of a gap compared to deep within the gap.

Abstract translation: 描述了从衬底的表面选择性地蚀刻金属和金属氮化物的方法。 蚀刻相对于诸如硅，多晶硅，氧化硅，硅锗，碳化硅，氮化硅和/或氮化硅的含硅层选择性地去除金属和金属氮化物。 蚀刻通过包括产生薄的均匀金属氧化物的氧化操作以保形方式去除材料。 然后通过在基板处理区域中将金属氧化物暴露于金属卤素前体而除去薄的均匀金属氧化物。 金属氧化物可以被去除完成，并且一旦去除均匀的金属氧化物层就可能停止蚀刻。 本文所述的蚀刻可用于在高纵横比特征上均匀地修整材料，该特征通常在与间隙内的深度相比间隙开口附近显示更高的蚀刻速率。

公开(公告)号：US12272531B2

公开(公告)日：2025-04-08

申请号：US17716419

申请日：2022-04-08

Applicant: Applied Materials, Inc.

Inventor： Christopher S. Olsen ,  Rene George ,  Tsung-Han Yang ,  David Knapp ,  Lara Hawrylchak

IPC: H01J37/32 ,  C23C8/12 ,  C23C8/36 ,  H01L21/02 ,  H10B69/00

Abstract: A method and apparatus for growing an oxide layer within a feature of a substrate is described herein. The method is suitable for use in semiconductor manufacturing. The oxide layer is formed by exposing a substrate to both a high pressure oxidant exposure and a lower pressure oxygen containing plasma exposure. The high pressure oxidant exposure is performed at a pressure of greater than 10 Torr, while the lower pressure oxygen containing plasma exposure is performed at a pressure of less than about 10 Torr. The features are high-aspect ratio trenches or holes within a stack of silicon oxide and silicon nitride layers.

公开(公告)号：US10483116B2

公开(公告)日：2019-11-19

申请号：US16180817

申请日：2018-11-05

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  H01L29/786

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

公开(公告)号：US10283352B2

公开(公告)日：2019-05-07

申请号：US15919902

申请日：2018-03-13

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  C23C16/00 ,  H01L21/02 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C23C16/34

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

公开(公告)号：US10115593B2

公开(公告)日：2018-10-30

申请号：US15833728

申请日：2017-12-06

Applicant: APPLIED MATERIALS, INC.

Inventor： David Knapp ,  Simon Huang ,  Jeffrey W. Anthis ,  Philip Alan Kraus ,  David Thompson

IPC: H01L21/033 ,  H01J37/32 ,  H01L21/02 ,  B82Y30/00 ,  C08K3/04

Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.

公开(公告)号：US20160336222A1

公开(公告)日：2016-11-17

申请号：US15151612

申请日：2016-05-11

Applicant: Applied Materials, Inc.

Inventor： David Knapp ,  Jeffrey W. Anthis ,  Xinyu Fu ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/532

CPC classification number: H01L21/76876 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/49866 ,  H01L23/53266

Abstract: Processing methods comprising exposing a substrate to a nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal-containing compound and a second reactive gas to form a metal-containing film on the substrate.

Abstract translation: 处理方法包括将基底暴露于成核促进剂，随后顺次暴露包含含金属化合物和第二反应气体的第一反应气体，以在基材上形成含金属膜。

公开(公告)号：US20240266180A1

公开(公告)日：2024-08-08

申请号：US18429554

申请日：2024-02-01

Applicant: Applied Materials, Inc.

Inventor： David Knapp ,  Feng Qiao ,  Hailong Zhou ,  Junkai He ,  Qian Fu ,  Mark J. Saly ,  Jeffrey Anthis ,  Jayoung Choi

IPC: H01L21/3065 ,  H10B12/00

CPC classification number: H01L21/3065 ,  H10B12/01

Abstract: A method includes performing a dry etch process to remove a portion of a first layer disposed on a second layer of a stack of alternating layers. The first layer includes a first material and the second layer includes a second material different from the first material, and the dry etch process forms a passivation layer including a byproduct on surfaces of the second material. A amount of first material of the portion of the first layer remains after performing the dry etch process, The method further includes introducing a halide gas to enhance the passivation layer on the surfaces of the second material.

公开(公告)号：US11933942B2

公开(公告)日：2024-03-19

申请号：US16820338

申请日：2020-03-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Alexander Berger ,  Cheng-Hsuan Chou ,  David Knapp

IPC: C23C16/04 ,  B05D1/00 ,  B05D7/22 ,  G02B1/14 ,  G02B3/00

CPC classification number: G02B1/14 ,  B05D1/60 ,  B05D7/22 ,  C23C16/045 ,  G02B3/00

Abstract: Described herein is a method of depositing a conformal, optically transparent coating onto a surface of one or more internal components that are enclosed within an assembled device using a non-line-of-sight deposition process without altering a structure of the assembled device or impacting functionality of the assembled device. Also described is an assembled device including one or more internal components enclosed within the assembled device and a coating deposited onto a surface of the internal components enclosed within the assembled device, where the coating is a conformal, optically transparent coating that is resistant to corrosion by at least one of fluorine-, chlorine-, sulfur-, hydrogen-, bromine-, or nitrogen-based acids and that does not negatively impact functionality of the internal components.