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    Method for removing native oxide and associated residue from a substrate
    13.
    发明授权
    Method for removing native oxide and associated residue from a substrate 有权
    从底物中除去天然氧化物和相关残留物的方法

    公开(公告)号：US08951913B2

    公开(公告)日：2015-02-10

    申请号：US14303292

    申请日：2014-06-12

    Applicant: Applied Materials, Inc.

    Inventor： Bo Zheng ,  Arvind Sundarrajan ,  Xinyu Fu

    IPC: H01L21/44 ,  H01L21/02 ,  H01J37/32 ,  H01L21/285 ,  H01L21/74 ,  H01L21/768

    CPC classification number: H01L21/02063 ,  H01J37/32082 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/743 ,  H01L21/768

    Abstract: Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

    Abstract translation: 通过在单个处理室中在衬底上依次执行两个等离子体清洗工艺，从衬底的表面除去天然氧化物和相关残留物。 第一等离子体清洁工艺通过从氨（NH 3）和三氟化氮（NF 3）气体的混合物中产生清洁等离子体，从而将清洁等离子体的产物冷凝在天然氧化物上，从而去除在基底表面上形成的天然氧化物，形成薄膜， 含有六氟硅酸铵（（NH 4）2 SiF 6），并将薄膜从衬底表面上升华。 通过从三氟化氮气体产生第二清洗等离子体，第二等离子体清洗工艺去除剩余的薄膜残留物。 第二清洗等离子体的产物与表面上存在的裸硅几埃反应，形成四氟化硅（SiF4）并提取薄膜的残留物。

    Method of enabling seamless cobalt gap-fill
    15.
    发明授权
    Method of enabling seamless cobalt gap-fill 有权

    公开(公告)号：US10699946B2

    公开(公告)日：2020-06-30

    申请号：US15364780

    申请日：2016-11-30

    Applicant: Applied Materials, Inc.

    Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Mathew Abraham

    IPC: H01L21/768 ,  H01L21/285 ,  C23C16/18 ,  H01L23/532

    Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

    Methods for etching via atomic layer deposition (ALD) cycles
    16.
    发明授权
    Methods for etching via atomic layer deposition (ALD) cycles 有权
    通过原子层沉积（ALD）循环进行蚀刻的方法

    公开(公告)号：US09595466B2

    公开(公告)日：2017-03-14

    申请号：US14717740

    申请日：2015-05-20

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Mei Chang ,  Seshadri Ganguli ,  Guoqiang Jian ,  Yixiong Yang ,  Vikash Banthia ,  Jonathan Bakke

    IPC: H01L21/44 ,  H01L21/768

    CPC classification number: H01L21/76816 ,  H01L21/32135 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76879

    Abstract: Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WClx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.

    Abstract translation: 本发明提供蚀刻基板的方法。 在一些实施例中，用于蚀刻设置在处理室的处理体积内的衬底的方法包括：（a）将设置在衬底顶部的第一层暴露于包含氯化钨（WClx）的第一气体第一时间段 第一压力，其中x为5或6; （b）使用惰性气体吹扫第一气体的处理量第二段; （c）在清洗第一气体的处理容积之后，将衬底暴露于含氢气体持续第三时间以蚀刻第一层; 和（d）使用惰性气体净化含氢气体的处理量第四个时间段。

    Methods for manufacturing metal gates
    19.
    发明授权
    Methods for manufacturing metal gates 有权
    制造金属门的方法

    公开(公告)号：US08987080B2

    公开(公告)日：2015-03-24

    申请号：US13865285

    申请日：2013-04-18

    Applicant: Applied Materials, Inc.

    Inventor： Xinliang Lu ,  Seshadri Ganguli ,  Atif Noori ,  Maitreyee Mahajani ,  Shih Chung Chen ,  Yu Lei ,  Xinyu Fu ,  Wei Tang ,  Srinivas Gandikota

    IPC: H01L21/336 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/28 ,  H01L21/322 ,  H01L29/49 ,  H01L29/78

    CPC classification number: H01L29/66477 ,  H01L21/28088 ,  H01L21/3221 ,  H01L21/823821 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/78

    Abstract: Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.

    Abstract translation: 提供了适用于FinFET结构的金属栅极的方法。 本文描述的方法通常涉及在半导体衬底上形成高k电介质材料; 在高k电介质材料上沉积高k电介质盖层; 沉积具有正功函数值的PMOS功函数层; 沉积NMOS工作功能层; 在NMOS工作功能层上沉积NMOS工作功能覆盖层; 去除所述PMOS功函数层的至少一部分或所述NMOS功函数层的至少一部分; 并沉积填充层。 沉积高k电介质盖层，沉积PMOS功函数层或沉积NMOS工作功能覆盖层可包括TiN，TiSiN或TiAlN的原子层沉积。 可以首先沉积PMOS或NMOS。

    Post deposition treatments for CVD cobalt films
    20.
    发明授权
    Post deposition treatments for CVD cobalt films 有权
    CVD钴膜的后沉积处理

    公开(公告)号：US08765601B2

    公开(公告)日：2014-07-01

    申请号：US13956969

    申请日：2013-08-01

    Applicant: Applied Materials, Inc.

    Inventor： Yu Lei ,  Xinyu Fu ,  Anantha Subramani ,  Seshadri Ganguli ,  Srinivas Gandikota

    IPC: H01L21/283 ,  B82Y40/00

    CPC classification number: H01L21/02697 ,  B82Y40/00 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.

    Abstract translation: 本发明的实施例提供了在用于金属栅极和其它应用的基板上形成材料的方法。 在一个实施例中，一种方法包括通过在沉积工艺期间沉积钴层而在设置在衬底上的势垒层上形成钴堆叠，在等离子体工艺期间将钴层暴露于等离子体以形成等离子体处理的钴层，以及 重复钴沉积工艺和等离子体工艺以形成含有多个等离子体处理的钴层的钴堆。 该方法还包括将钴堆叠暴露于氧源气体，以在表面氧化过程期间从钴堆叠的上部形成钴氧化物层，并将钴堆叠的剩余部分加热至约300 约500℃，以在热退火结晶过程中形成结晶钴膜。

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