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    Process kit for deposition and etching
    11.
    发明授权
    Process kit for deposition and etching 有权

    公开(公告)号：US10099245B2

    公开(公告)日：2018-10-16

    申请号：US13831285

    申请日：2013-03-14

    Applicant: APPLIED MATERIALS, INC.

    Inventor： John Forster ,  Zhenbin Ge ,  Alan Ritchie

    IPC: C23C16/44 ,  H01L21/67 ,  B05C21/00 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34

    Abstract: Variable geometry process kits for use in semiconductor process chambers have been provided herein. In some embodiments, a process kit for use in a semiconductor process chamber includes: an annular body configured to rest about a periphery of a substrate support; a first ring positioned coaxially with the annular body and supported by the annular body; a second ring positioned coaxially with the first ring and supported by the first ring; and an annular shield comprising a horizontal leg positioned coaxially with the second ring such that a portion of the horizontal leg is aligned with and below portions of the first ring and second ring.

    Dual-Direction Chemical Delivery System For ALD/CVD Chambers
    12.
    发明申请
    Dual-Direction Chemical Delivery System For ALD/CVD Chambers 有权
    ALD / CVD室的双向化学物质输送系统

    公开(公告)号：US20160273108A1

    公开(公告)日：2016-09-22

    申请号：US15152731

    申请日：2016-05-12

    Applicant: Applied Materials, Inc.

    Inventor： Zhenbin Ge ,  Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang

    IPC: C23C16/455 ,  C23C14/22 ,  C23C16/52

    CPC classification number: C23C16/45565 ,  B08B9/0325 ,  C23C14/22 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  Y10T137/4259

    Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

    Abstract translation: 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

    Selectively groundable cover ring for substrate process chambers
    14.
    发明授权
    Selectively groundable cover ring for substrate process chambers 有权
    用于基板处理室的选择性可底座盖环

    公开(公告)号：US09472443B2

    公开(公告)日：2016-10-18

    申请号：US13831363

    申请日：2013-03-14

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Muhammad M. Rasheed ,  Kirankumar Savandaiah ,  William Johanson ,  Zhenbin Ge ,  Goichi Yoshidome

    IPC: C23C14/34 ,  H01L21/687 ,  H01J37/32 ,  C23C14/50

    CPC classification number: H01L21/68735 ,  C23C14/34 ,  C23C14/50 ,  H01J37/32651 ,  H01J37/32715

    Abstract: Embodiments of a process kit for substrate process chambers are provided herein. In some embodiments, a process kit for a substrate process chamber may include a ring having a body and a lip extending radially inward from the body, wherein the body has a first annular channel formed in a bottom of the body; an annular conductive shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first annular channel of the ring; and a conductive member electrically coupling the ring to the conductive shield when the ring is disposed on the conductive shield.

    Abstract translation: 本文提供了用于基板处理室的处理套件的实施例。 在一些实施例中，用于衬底处理室的处理套件可以包括具有本体和从主体径向向内延伸的唇缘的环，其中主体具有形成在主体的底部中的第一环形通道; 环形导电屏蔽件，其具有下部向内延伸的凸缘，其终止于构造成与环的第一环形通道相接合的向上延伸部分; 以及当所述环设置在所述导电屏蔽上时，所述导电构件将所述环电耦合到所述导电屏蔽层。

    COUNTER BASED TIME COMPENSATION TO REDUCE PROCESS SHIFTING IN REACTIVE MAGNETRON SPUTTERING REACTOR
    15.
    发明申请
    COUNTER BASED TIME COMPENSATION TO REDUCE PROCESS SHIFTING IN REACTIVE MAGNETRON SPUTTERING REACTOR 审中-公开
    基于计数器的时间补偿以减少反应性磁控溅射反应器中的工艺转移

    公开(公告)号：US20160222503A1

    公开(公告)日：2016-08-04

    申请号：US15007181

    申请日：2016-01-26

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Mohammad Kamruzzaman Chowdhury ,  Zhenbin Ge ,  Adolph Miller Allen

    IPC: C23C14/34 ,  C23C14/54 ,  H01J37/34 ,  C23C14/35

    CPC classification number: C23C14/3492 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/52 ,  C23C14/542 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3444 ,  H01J37/3464 ,  H01J37/347 ,  H01J37/3473

    Abstract: A method of processing a substrate includes: sputtering target material for a first amount of time using a first plasma formed from an inert gas and a first amount of power; determining a first counter, based on a product of a flow rate of the inert gas, the first amount of power, and the first amount of time; sputtering a metal compound material for a second amount of time using a second plasma formed from a process gas comprising a reactive gas and an inert gas and a second amount of power; determining a second counter based on a product of a flow rate of the process gas, the second amount of power, and the second amount of time; determining a third counter; and depositing a metal compound layer onto a predetermined number of substrates, wherein a deposition time for each substrate is adjusted based on the third counter.

    Abstract translation: 一种处理衬底的方法包括：使用由惰性气体形成的第一等离子体和第一量的功率来溅​​射靶材料一段时间; 基于所述惰性气体的流量，所述第一功率量和所述第一时间量的乘积确定第一计数器; 使用由包含反应性气体和惰性气体的处理气体形成的第二等离子体和第二量的功率来溅​​射金属化合物材料第二时间量; 基于处理气体的流量，第二量的功率和第二时间量的乘积确定第二计数器; 确定第三个计数器; 以及将金属化合物层沉积到预定数量的基板上，其中基于第三计数器调整每个基板的沉积时间。

    RF power compensation to control film stress, density, resistivity, and/or uniformity through target life
    16.
    发明授权
    RF power compensation to control film stress, density, resistivity, and/or uniformity through target life 有权

    公开(公告)号：US10242873B2

    公开(公告)日：2019-03-26

    申请号：US14640881

    申请日：2015-03-06

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Adolph Miller Allen ,  Zhenbin Ge

    IPC: C23C14/35 ,  H01L21/033 ,  C23C14/06 ,  H01L21/285 ,  H01L21/311

    Abstract: Methods for depositing a metal-containing layer atop a substrate disposed in a PVD chamber are provided herein. In some embodiments, such a method includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and increasing the first amount of RF power provided to the target assembly by a predetermined amount while sputtering the source material, wherein the predetermined amount is determined by a second amount of RF power provided to the target assembly to maintain a desired ionization rate of source material at a second erosion state.

    Methods and apparatus for stable substrate processing with multiple RF power supplies
    19.
    发明授权
    Methods and apparatus for stable substrate processing with multiple RF power supplies 有权
    使用多个RF电源进行稳定的基板处理的方法和装置

    公开(公告)号：US09593410B2

    公开(公告)日：2017-03-14

    申请号：US13785880

    申请日：2013-03-05

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Zhenbin Ge ,  Alan A. Ritchie

    IPC: C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34

    CPC classification number: C23C14/54 ,  C23C14/3471 ,  C23C14/35 ,  H01J37/32165 ,  H01J37/32403 ,  H01J37/3405 ,  H01J37/3441 ,  H01J37/3464 ,  H01J37/3476

    Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a physical vapor deposition chamber includes a first RF power supply having a first base frequency and coupled to one of a target or a substrate support; and a second RF power supply having a second base frequency and coupled to one of the target or the substrate support, wherein the first and second base frequencies are integral multiples of each other, wherein the second base frequency is modified to an offset second base frequency that is not an integral multiple of the first base frequency.

    Abstract translation: 本文提供了处理衬底的方法和装置。 在一些实施例中，物理气相沉积室包括具有第一基本频率并且耦合到目标或基板支架之一的第一RF电源; 以及具有第二基本频率并耦合到所述目标或所述衬底支架之一的第二RF电源，其中所述第一和第二基本频率是彼此的整数倍，其中所述第二基本频率被修改为偏移的第二基本频率 这不是第一个基本频率的整数倍。

    Magnetron design for extended target life in radio frequency (RF) plasmas
    20.
    发明授权
    Magnetron design for extended target life in radio frequency (RF) plasmas 有权
    用于射频（RF）等离子体延长目标寿命的磁控管设计

    公开(公告)号：US09028659B2

    公开(公告)日：2015-05-12

    申请号：US13961165

    申请日：2013-08-07

    Applicant: Applied Materials, Inc.

    Inventor： Alan Ritchie ,  Zhenbin Ge ,  Tza-Jing Gung ,  Vivek Gupta

    IPC: C23C14/35 ,  H01J37/32 ,  H01J37/34

    CPC classification number: C23C14/35 ,  H01J37/3266 ,  H01J37/3408 ,  H01J37/3452

    Abstract: Embodiments of magnetrons suitable to provide extended target life in radio frequency (RF) plasmas are provided. In some embodiments, apparatus and methods are provided to control film uniformity while extending the target life in an RF plasma. In some embodiments, the present invention may facilitate one or more of very high target utilization, more uniform metal ionization, and more uniform deposition on a substrate. In some embodiments, a magnetron may include a magnet support member having a center of rotation; and a plurality of magnetic tracks, each track comprising a pair of open loop magnetic poles parallel to and spaced apart from each other, wherein one track is disposed near the center of the magnet support member, and wherein a different track is disposed in a position corresponding to an outer edge of a target material to be deposited on a substrate when installed in the PVD process chamber.

    Abstract translation: 提供了适合在射频（RF）等离子体中提供延长的目标寿命的磁控管的实施例。 在一些实施例中，提供了设备和方法来控制膜均匀性，同时延长RF等离子体中的目标寿命。 在一些实施方案中，本发明可以促进在基材上非常高的目标利用，更均匀的金属电离和更均匀的沉积中的一种或多种。 在一些实施例中，磁控管可以包括具有旋转中心的磁体支撑构件; 和多个磁道，每个轨道包括彼此平行并间隔开的一对开环磁极，其中一个轨道设置在磁体支撑构件的中心附近，并且其中不同的轨道设置在一个位置 对应于当安装在PVD处理室中时要沉积在基板上的目标材料的外边缘。

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