公开(公告)号：US5475256A

公开(公告)日：1995-12-12

申请号：US235947

申请日：1994-05-02

申请人： Sosaku Sawada ,  Goro Sasaki ,  Hiroshi Yano

发明人： Sosaku Sawada ,  Goro Sasaki ,  Hiroshi Yano

IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L31/10 ,  H03F3/08 ,  H01L27/01

CPC分类号： H01L27/1443 ,  H03F3/08

摘要： An opto-electronic integrated circuit is arranged to comprise a photodetector and a tunnel emitter bipolar transistor for first-stage amplification of a current generated in the photodetector, as formed on a substrate. The tunnel emitter bipolar transistor can be operated at high speed and has a high amplification factor, so that noise due to the base current can be reduced upon amplification of the current generated in the photodetector by light detection.

摘要翻译： 光电集成电路被布置为包括光电检测器和隧道射极双极晶体管，用于在基板上形成的在光电检测器中产生的电流的第一级放大。 隧道发射极双极晶体管可以高速运行并且具有高的放大系数，从而可以通过光检测放大在光电检测器中产生的电流，从而降低基极电流引起的噪声。

公开(公告)号：US5444274A

公开(公告)日：1995-08-22

申请号：US268548

申请日：1994-07-06

申请人： Goro Sasaki

发明人： Goro Sasaki

IPC分类号： H01L27/144 ,  H01L31/0352 ,  H01L31/105 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L31/035281 ,  H01L27/1443 ,  H01L31/105 ,  Y02E10/50

摘要： A photodetector of the present invention is devised to reduce the dark current by employing a novel guard ring structure suitable for a mesa type photodiode (PD). Namely, the PD of the present invention has the structure in which a p-type or n-type semiconductor region which is to be a light receiving area is surrounded by a semiconductor region (guard ring) of the same conduction type. A guard ring electrode is formed on the guard ring region and is kept at the same potential as an electrode on a region desired to reduce the dark current. Also, an opto-electronic integrated circuit of the present invention has such a structure that a PD, which is the photodetector of the present invention, and a circuit element such as a transistor are formed on a common semiconductor substrate and that an anode electrode or a cathode electrode of the PD is conductively connected to a gate electrode of a field-effect transistor or to a base electrode of a bipolar transistor.

摘要翻译： 本发明的光检测器被设计为通过采用适用于台面型光电二极管（PD）的新型保护环结构来减小暗电流。 也就是说，本发明的PD具有这样的结构，其中作为光接收区域的p型或n型半导体区域被相同导电类型的半导体区域（保护环）包围。 保护环电极形成在保护环区域上，并且与希望减少暗电流的区域上的电极保持相同的电位。 此外，本发明的光电集成电路具有这样的结构，即在公共半导体衬底上形成作为本发明的光电检测器的PD和诸如晶体管的电路元件，并且阳极电极或 PD的阴极电极导电地连接到场效应晶体管的栅电极或双极晶体管的基极。

公开(公告)号：US5170228A

公开(公告)日：1992-12-08

申请号：US495768

申请日：1990-03-19

申请人： Goro Sasaki

发明人： Goro Sasaki

IPC分类号： H01L27/144

CPC分类号： H01L27/1443

摘要： Present invention is to provide a process for producing an opto-electronic integrated circuit comprising a field effect transistor as an electronic device and a photo-diode as an optical device both formed on an InP substrate,the field effect transistor comprising a high electron mobility transistor having:a GaInAs layer epitaxially grown in the InP substrate in a preset region thereof, a n-AlInAs layer epitaxially grown on the GaInAs layer, a gate electrode formed on the AlInAs layer, and a source electrode and a drain electrode formed on the AlInAs layer with the gate electrode therebetween, andthe photo-diode comprising a PIN photo-diode having:the GaInAs layer epitaxially grown on the InP substrate near the region of the field effect transistor simultaneously with the growth of that of the field effect transistor, the n-AlInAs layer epitaxially grown on the GaInAs layer simultaneously with the growth of that of the field effect transistor, a n-InP layer epitaxially grown on the n-AlInAs layer, an undoped GaInAs layer epitaxially grown on the n-InP layer in a preset region thereof, a p-GaInAs layer epitaxially grown on the undoped GaInAs layer, an anode electrode formed on the p-GaInAs layer, and a cathode electrode formed on the n-InP layer near the undoped GaInAs layer.

摘要翻译： 本发明提供一种用于制造光电集成电路的方法，该光电集成电路包括作为电子器件的场效应晶体管和均匀地形成在InP衬底上的光电二极管，所述场效应晶体管包括高电子迁移率晶体管 具有：在其预置区域中在InP衬底中外延生长的GaInAs层，在GaInAs层上外延生长的n-AlInAs层，形成在AlInAs层上的栅电极和形成在AlInAs上的源电极和漏电极 层，其间具有栅电极，并且光电二极管包括PIN光电二极管，其具有在场效应晶体管的区域附近外延生长在InP衬底上的GaInAs层，同时场效应晶体管的生长， 在GaInAs层上外延生长的n-AlInAs层与场效应晶体管的生长同时生长，n-InP层外延生长在 n-AlInAs层，在其预设区域中在n-InP层上外延生长的未掺杂的GaInAs层，在未掺杂的GaInAs层外延生长的p-GaInAs层，形成在p-GaInAs层上的阳极电极和阴极 电极在未掺杂的GaInAs层附近形成在n-InP层上。

公开(公告)号：US06944203B2

公开(公告)日：2005-09-13

申请号：US10410178

申请日：2003-04-10

申请人： Hiroyuki Nakaya ,  Goro Sasaki

发明人： Hiroyuki Nakaya ,  Goro Sasaki

IPC分类号： H01S3/094 ,  H01S3/0941 ,  H01S5/022 ,  H01S5/14 ,  H01S3/08

CPC分类号： H01S5/146 ,  H01S3/094011 ,  H01S3/094069 ,  H01S3/094096 ,  H01S3/09415 ,  H01S5/02216 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02296 ,  H01S5/1096

摘要： A multimode light generating module comprises an optical cavity and a light-receiving element. The optical cavity is constituted by a semiconductor optical amplification element, and an optical fiber having a grating. The optical fiber comprises a grating having an apodized periodic refractive index distribution, and the slope of the reflection spectrum in a longer wavelength region with respect to the peak wavelength λp is gentler than that in the shorter wavelength region therewith. The grating satisfies the relationship of 0.5 nm>λ0.2−λp>0.1 nm. Here, λ0.2 is defined by λ0.2h-λ0.2l, where λ0.2h is the longer one of two wavelengths exhibiting a relative reflectivity of 0.2 with respect to the maximum reflectivity, and λ0.2l is the shorter one of two wavelengths exhibiting a relative reflectivity of 0.2 with respect to the maximum reflectivity.

摘要翻译： 多模式光产生模块包括光学腔和光接收元件。 光腔由半导体光放大元件和具有光栅的光纤构成。 光纤包括具有变迹的周期性折射率分布的光栅，并且相对于峰值波长λλ的较长波长区域中的反射光谱的斜率比较短波长区域 随之而来。 该光栅满足0.5nm>λ<0.2λ/λ<0.01的关系。 这里，λ<0.2>由λ 其中λ2是相对于最大反射率表现出相对反射率为0.2的两个波长中较长的一个，并且λ<0.2> > l 是相对于最大反射率表现出相对反射率为0.2的两个波长中较短的一个。