公开(公告)号：US5051372A

公开(公告)日：1991-09-24

申请号：US507530

申请日：1990-04-11

申请人： Goro Sasaki

发明人： Goro Sasaki

IPC分类号： H01L21/20 ,  H01L21/8252 ,  H01L27/06 ,  H01L27/144 ,  H01L31/105

CPC分类号： H01L21/8252 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/1443 ,  H01L31/105 ,  H01L27/0605 ,  Y10S148/072 ,  Y10S148/103

摘要： There is disclosed a method of manufacturing an integrated circuit, comprising: the first step of growing a first epitaxial crystal on a compound semiconductor substrate, removing an unnecessary region of the first epitaxial crystal to form a residual portion, and covering the residual portion with a selective growth mask, the second step of growing a second epitaxial crystal on an exposed substrate portion, removing an unnecessary portion of the second epitaxial crystal to form a residual portion of the second epitaxial crystal, and covering the residual portion of the second epitaxial crystal with a selective growth mask, and third step of growing a third epitaxial crystal on an exposed substrate portion and removing an unnecessary region of the third epitaxial crystal, wherein the first to third epitaxial crystal form any one of a pin photodiode crystal, a heterojunction bipolar transistor crystal, and a high electron mobility transistor crystal, and are different from each other.

公开(公告)号：US06273620B1

公开(公告)日：2001-08-14

申请号：US09384405

申请日：1999-08-27

申请人： Takashi Kato ,  Goro Sasaki ,  Manabu Shiozaki

发明人： Takashi Kato ,  Goro Sasaki ,  Manabu Shiozaki

IPC分类号： G02B636

CPC分类号： H01S5/146 ,  G02B6/4203 ,  G02B6/426 ,  G02B6/4265 ,  G02B6/4271 ,  G02B6/4272 ,  G02B6/4286 ,  H01S5/1085

摘要： A fiber grating laser module comprises a semiconductor optical amplifier and a grating fiber in which a Bragg grating is formed in the core. The semiconductor optical amplifier provides a wave guide in which the light is generated and amplified by the carrier injection, the light emitting facet and the light reflecting facet. The Bragg grating in the grating fiber and the light reflecting facet of the semiconductor amplifier forms an optical resonator. The subject of the invention is that the reflectance of the Bragg grating at the Bragg diffraction wavelength is greater than 60%.

摘要翻译： 光纤光栅激光器模块包括半导体光放大器和其中在芯中形成布拉格光栅的光栅光纤。 半导体光放大器提供波导，其中通过载流子注入，发光小面和光反射小面产生和放大光。 光栅光纤中的布拉格光栅和半导体放大器的光反射小面形成光学谐振器。 本发明的主题是布拉格光栅在布拉格衍射波长处的反射率大于60％。

公开(公告)号：US5845030A

公开(公告)日：1998-12-01

申请号：US831254

申请日：1997-04-08

申请人： Goro Sasaki ,  Atsushi Hamakawa

发明人： Goro Sasaki ,  Atsushi Hamakawa

IPC分类号： G02B6/42 ,  G02B6/02 ,  H01S3/067 ,  H01S3/094 ,  H01S5/00 ,  H01S5/022 ,  H01S5/024 ,  H01S5/125 ,  H01S5/14 ,  G02B6/36

CPC分类号： H01S5/147 ,  H01S3/094003 ,  H01S3/094053 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415

摘要： A semiconductor laser module includes a semiconductor laser having an active region between a light-reflecting surface and a light-exit surface thereof, and an optical fiber optically coupled to the semiconductor laser and including an optical fiber diffraction grating. The optical fiber diffraction grating selectively reflects light within a predetermined wavelength band. The wavelength band has a width larger than a wavelength interval of a longitudinal mode of light resonating between the light-reflecting surface and the light-exit surface.

摘要翻译： 半导体激光器模块包括在光反射表面和光出射表面之间具有有源区的半导体激光器和与半导体激光器光学耦合并且包括光纤衍射光栅的光纤。 光纤衍射光栅选择性地反射预定波长带内的光。 波长带的宽度大于在光反射表面和光出射表面之间谐振的纵向光模的波长间隔。

公开(公告)号：US06805494B2

公开(公告)日：2004-10-19

申请号：US10295034

申请日：2002-11-15

申请人： Atsushi Miki ,  Hiroyuki Yabe ,  Kazuhiro Tanida ,  Yoko Watanabe ,  Jiro Shinkai ,  Toshio Takagi ,  Goro Sasaki

发明人： Atsushi Miki ,  Hiroyuki Yabe ,  Kazuhiro Tanida ,  Yoko Watanabe ,  Jiro Shinkai ,  Toshio Takagi ,  Goro Sasaki

IPC分类号： G02B636

CPC分类号： H01S5/02438 ,  H01S5/02216 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/0687

摘要： A main portion 10 of an optical module 1 includes a thermoelectric cooler 21, and a chip carrier 22b placed on the cooler 21. A semiconductor light-emitting device 31, a lens 32, photodetectors 33a, 33b, and an etalon 34 are directly or indirectly mounted on the chip carrier 22b. Supporting members 36a and 36b are also fixed on the chip carrier 22b. A roof 35 is supported by the supporting members 36a, 36b and positioned above the etalon 34. The roof 35, supporting members 36a, 36b and chip carrier 22b are maintained at substantially equal temperatures by the cooler 21. As a result, the temperature of the etalon 34 is stabilized, and therefore the variation in the lock wavelength is suppressed.

摘要翻译： 光学模块1的主要部分10包括热电冷却器21和放置在冷却器21上的芯片载体22b。半导体发光器件31，透镜32，光电检测器33a，33b和标准具34是直接或 间接地安装在芯片载体22b上。 支撑构件36a和36b也固定在芯片载体22b上。 屋顶35由支撑构件36a，36b支撑并且定位在标准具34之上。顶部35，支撑构件36a，36b和芯片载体22b通过冷却器21保持在基本相同的温度。结果， 标准具34稳定，因此抑制了锁定波长的变化。

公开(公告)号：US5489798A

公开(公告)日：1996-02-06

申请号：US267439

申请日：1994-06-29

申请人： Kentaro Doguchi ,  Goro Sasaki ,  Hiroshi Yano ,  Sosaku Sawada

发明人： Kentaro Doguchi ,  Goro Sasaki ,  Hiroshi Yano ,  Sosaku Sawada

IPC分类号： H01L27/144 ,  H01L31/0224 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L27/1443 ,  H01L31/022416

摘要： In an opto-electronic integrated circuit of the present invention, in a first surface region of a semiconductor substrate, a pin-type photodiode is constituted on the basis of a photodiode layer formed on a first transistor layer. In a second surface region of the semiconductor substrate, a heterojunction bipolar transistor is constituted on the basis of only a second transistor layer separated form the first transistor layer. Since a plurality of heterojunction bipolar transistors are normally integrated for one pin-type photodiode, the thickness of the heterojunction bipolar transistors larger in number than the pin-type photodiode is set regardless of the thickness of the pin-type photodiode. The thickness of a high-resistance layer in the pin-type photodiode is set with an increased degree of freedom. When the first surface region of the semiconductor substrate is the inner region of a recessed step portion, and the second surface region of the semiconductor substrate is the outer region of the recessed step portion, a difference in thickness between the heterojunction bipolar transistor and the pin-type photodiode is absorbed by the depth of the recessed step portion. For this reason, the pin-type photodiode and the heterojunction bipolar transistor are formed to have almost the same surface level.

摘要翻译： 在本发明的光电集成电路中，在半导体衬底的第一表面区域中，基于形成在第一晶体管层上的光电二极管层构成针型光电二极管。 在半导体衬底的第二表面区域中，基于仅从第一晶体管层分离的第二晶体管层构成异质结双极晶体管。 由于多个异质结双极晶体管通常集成在一个pin型光电二极管中，所以与pin型光电二极管的厚度无关地设定比pin型光电二极管数量大的异质结双极型晶体管的厚度。 针型光电二极管中的高电阻层的厚度设定为增加的自由度。 当半导体衬底的第一表面区域是凹入阶梯部分的内部区域，并且半导体衬底的第二表面区域是凹陷步骤部分的外部区域时，异质结双极晶体管和引脚之间的厚度差 型光电二极管被凹陷台阶部分的深度吸收。 为此，pin型光电二极管和异质结双极晶体管形成为具有几乎相同的表面水平。

公开(公告)号：US5357103A

公开(公告)日：1994-10-18

申请号：US953082

申请日：1992-09-29

申请人： Goro Sasaki

发明人： Goro Sasaki

IPC分类号： G02B6/36 ,  G02B6/42 ,  H01J5/16

CPC分类号： G02B6/4249 ,  G02B6/4214 ,  G02B6/364 ,  G02B6/3652 ,  G02B6/3692 ,  Y10S438/928

摘要： A light receiving module and its manufacturing method of an excellent structure which can make a good and uniform optical couple between an optical fiber and a light receiving element, and can improve its productivity. The light receiving module comprises a semiconductor substrate, a light receiving element mounted on a surface of the semiconductor substrate, a groove formed on a back surface of the semiconductor substrate, an inclined face in the back surface side facing the light receiving element, and an optical fiber fixed in the groove. A transmitted light signal through the fiber is reflected by the inclined face. The inclined face is formed at a distal end of the optical fiber, at the closed end wall of the groove, or a side wall of a dimple arranged on the extension line of the groove. The reflected light is admitted to a light receiving face of the light receiving element, from the back surface side of the semiconductor substrate.

摘要翻译： 一种能够在光纤和光接收元件之间形成良好且均匀的光耦合的优良结构的光接收模块及其制造方法，并且可以提高其生产率。 光接收模块包括半导体衬底，安装在半导体衬底的表面上的光接收元件，形成在半导体衬底的背面上的沟槽，与光接收元件相对的背面侧的倾斜面，以及 光纤固定在槽中。 通过光纤的透射光信号被倾斜面反射。 倾斜面形成在光纤的远端，凹槽的封闭端壁处或设置在凹槽的延伸线上的凹坑的侧壁。 反射光从半导体衬底的背面侧入射到光接收元件的光接收面。

公开(公告)号：US4996163A

公开(公告)日：1991-02-26

申请号：US313507

申请日：1989-02-22

申请人： Goro Sasaki

发明人： Goro Sasaki

IPC分类号： H01L27/144

CPC分类号： H01L27/1443 ,  Y10S148/119 ,  Y10S148/12

摘要： Present invention is to provide a process for producing an opto-electronic integrated circuit comprising a field effect transistor as an electronic device and a photo-diode as an optical device both formed on an InP substrate,the field effect transistor comprising a high electron mobility transistor having:a GaInAs layer epitaxially grown in the InP substrate in a preset region thereof, a n-AlInAs layer epitaxially grown on the GaInAs layer, a gate electrode formed on the AlInAs layer, and a source electrode and a drain electrode formed on the AlInAs layer with the gate electrode therebetween, andthe photo-diode comprising a PIN photo-diode having:the GaInAs layer epitaxially grown on the InP substrate near the region of the field effect transistor simultaneously with the growth of that of the field effect transistor, the n-AlInAs layer epitaxially grown on the GaInAs layer simultaneously with the growth of that of the field effect transistor, a n-InP layer epitaxially grown on the n-AlInAs layer, an undoped GaInAs layer epitaxially grown on the n-InP layer in a preset region thereof, a p-GaInAs layer epitaxially grown on the undoped GaInAs layer, an anode electrode formed on the p-GaInAs layer, and a cathode electrode formed on the n-InP layer near the undoped GaInAs layer.

公开(公告)号：US4764796A

公开(公告)日：1988-08-16

申请号：US939716

申请日：1986-12-09

申请人： Goro Sasaki ,  Hideki Hayashi

发明人： Goro Sasaki ,  Hideki Hayashi

IPC分类号： H01L29/94 ,  H01L29/778 ,  H01L27/12 ,  H01L29/161 ,  H01L29/80

CPC分类号： H01L29/7783

摘要： A field effect transistor utilizing semiconductor hetero junction having a high mutual conductance, low noise, and a reduced source resistance, has a gallium indium arsenide mixed crystal semiconductor layer (23) providing a current path, low resistance indium phosphide layers formed on or under the gallium indium arsenide mixed crystal semiconductor layer (23) by ion-implantation for achieving the reduced source resistance, a source electrode (6), a gate electrode (5) and a drain electrode (7) which are formed on the surface of an uppermost aluminum indium arsenide mixed crystal semiconductor layer (24), an ion-implanted layer located at least in a region to form the reduced source resistance between the source electrode (6) and a two-dimensional electron layer (8) within the gallium indium arsenide mixed crystal semiconductor layer (23).

摘要翻译： 利用具有高互导性，低噪声和降低的源极电阻的半导体异质结的场效应晶体管具有提供电流路径的镓铟砷化物混合晶体半导体层（23），在其上或下方形成的低电阻磷化铟层 砷化镓砷化物混合晶体半导体层（23），通过离子注入实现源极电阻降低，源电极（6），栅电极（5）和漏电极（7），其形成在最上面的表面 砷化铝砷化物混合晶体半导体层（24），至少位于一个区域内的离子注入层，以在源极电极（6）和砷化铟镓内的二维电子层（8）之间形成降低的源极电阻 混晶半导体层（23）。

公开(公告)号：US07027473B2

公开(公告)日：2006-04-11

申请号：US10260303

申请日：2002-10-01

申请人： Goro Sasaki

发明人： Goro Sasaki

IPC分类号： H01S3/13

CPC分类号： H01S5/0687 ,  H01S5/02216 ,  H01S5/02248 ,  H01S5/02284

摘要： The present invention provides a multimode semiconductor laser module. The module comprises a multimode laser element 34, an optical filter 54, a light-receiving element 52 and a temperature regulator 24. Multimode light from the laser element 34 is transmitted through the filter 54 and then detected by the light-receiving element 52. The output of the light-receiving element 52 changes according to the degree of overlap between the oscillation wavelength spectrum of the laser element 34 and the transmission wavelength region of the filter 54. The temperature regulator 24 modifies the oscillation wavelength region toward the desired region in response to the output of the light-receiving element 52. As a result, the oscillation wavelength region is stabilized.

摘要翻译： 本发明提供一种多模半导体激光器模块。 模块包括多模激光元件34，滤光器54，光接收元件52和温度调节器24。 来自激光元件34的多模光透射通过滤光器54，然后由光接收元件52检测。 光接收元件52的输出根据激光元件34的振荡波长谱和滤波器54的透射波长区域之间的重叠程度而变化。 温度调节器24响应于光接收元件52的输出，将振荡波长区域改变为期望的区域。 结果，振荡波长区域稳定。