公开(公告)号：US11180719B2

公开(公告)日：2021-11-23

申请号：US16756303

申请日：2018-10-29

Applicant: BASF SE

Inventor： Daniel Loeffler ,  Mei Chin Shen ,  Sheng Hsuan Wei ,  Frank Pirrung ,  Lothar Engelbrecht ,  Yeni Burk ,  Andreas Klipp ,  Marcel Brill ,  Szilard Csihony

IPC: C11D3/37 ,  C11D7/50 ,  G03F7/40 ,  H01L21/02

Abstract: The invention relates to the use of a non-aqueous composition comprising an organic solvent and at least one particular siloxane-type additive for treating substrates comprising patterns having line-space dimensions of 50 nm or below and aspect ratios of 4 or more as well as a method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm, aspect ratios of greater or equal 4, or a combination thereof, (2) contacting the substrate at least once with a non-aqueous composition, and (3) removing the non-aqueous composition from the contact with the substrate, wherein the non-aqueous composition comprising an organic solvent and at least one of such siloxane-type additives.

公开(公告)号：US20200255713A1

公开(公告)日：2020-08-13

申请号：US16860793

申请日：2020-04-28

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Martin Kaller ,  Michael Lauter ,  Yuzhuo Li ,  Andreas Klipp

IPC: C09K3/14 ,  H01L21/304 ,  H01L21/306 ,  H01L21/461 ,  H01L21/321 ,  C09G1/02

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：US09223221B2

公开(公告)日：2015-12-29

申请号：US14381039

申请日：2013-03-18

Applicant: BASF SE

Inventor： Simon Braun ,  Christian Bittner ,  Andreas Klipp

IPC: H01L21/461 ,  G03F7/42 ,  H01L21/311 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/265 ,  H01L21/266 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66

CPC classification number: G03F7/426 ,  C11D7/5004 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/02057 ,  H01L21/0271 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/31133 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66477

Abstract: A photoresist stripping and cleaning composition free from N-alkylpyrrolidones and added quaternary ammonium hydroxides comprising a component (A) which comprises the polar organic solvents N-methylimidazole, dimethylsulfoxide and 1-aminopropane-2-ol.

Abstract translation: 不含N-烷基吡咯烷酮的光致抗蚀剂剥离和清洁组合物和加入的季铵氢氧化物，其包含组分（A），其包含极性有机溶剂N-甲基咪唑，二甲基亚砜和1-氨基丙烷-2-醇。

公开(公告)号：US11377624B2

公开(公告)日：2022-07-05

申请号：US16767336

申请日：2018-12-05

Applicant: BASF SE

Inventor： Jhih Jheng Ke ,  Andreas Klipp ,  Yi Ping Cheng ,  Joannes Theodorus Valentinus Hoogboom

IPC: C11D7/08 ,  C11D3/24 ,  C11D3/00 ,  C11D3/20 ,  C11D3/30 ,  C11D3/34 ,  C11D11/00 ,  H01L21/02

Abstract: A cleaning composition for post-etch or post ash residue removal from a substrate used in semiconductor industry and a corresponding use of said cleaning composition is described. Further described is a process for the manufacture of a semiconductor device from a semiconductor substrate, comprising the step of post-etch or post ash residue removal from a substrate by contacting the substrate with a cleaning composition according to the invention.

公开(公告)号：US09891520B2

公开(公告)日：2018-02-13

申请号：US14904018

申请日：2014-07-08

Applicant: BASF SE

Inventor： Andreas Klipp ,  Andrei Honciuc ,  Chu-Ya Yang

IPC: G03F1/82 ,  G03F1/68 ,  G03F1/24 ,  G03F7/20 ,  G03F7/32 ,  C11D1/00 ,  G03F1/22

CPC classification number: G03F1/82 ,  C11D1/004 ,  G03F1/22 ,  G03F1/24 ,  G03F1/68 ,  G03F7/20 ,  G03F7/32

Abstract: In a method for cleaning photo masks having patterns with smallest line-space dimensions below 200 nm, a surfactant composition A is used, wherein A contains at least three short-chain perfluorinated groups Rf selected from the group consisting of trifluoromethyl, pentafluoroethyl, 1-heptafluoropropyl, 2-heptafluoropropyl, and pentafluorosulfanyl and wherein A exhibits, at a 1% by weight aqueous solution, a static surface tension below 25 mN/m.

公开(公告)号：US09557652B2

公开(公告)日：2017-01-31

申请号：US14652120

申请日：2013-12-04

Applicant: BASF SE

Inventor： Andreas Klipp ,  Andrei Honciuc ,  Günter Oetter ,  Christian Bittner

IPC: G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  C11D1/835 ,  C11D1/94 ,  C11D11/00 ,  G03F7/20 ,  G03F7/40

CPC classification number: G03F7/422 ,  C11D1/835 ,  C11D1/94 ,  C11D11/0047 ,  G03F7/2041 ,  G03F7/405 ,  H01L21/02057 ,  H01L21/0273

Abstract: In a method of treating a substrate including patterns having line-space dimensions of 50 nm or below, the substrate is rinsed by an aqueous composition including at least one non-ionic surfactant A and at least one hydrophobizer B. The at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration. The hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5-95° compared to the contact angle of water to the substrate before such contacting.

Abstract translation: 在处理包括线空间尺寸为50nm或更小的图案的基材的方法中，通过包含至少一种非离子表面活性剂A和至少一种疏水化剂B的水性组合物漂洗基材。至少一种表面活性剂A 具有10mN / m至35mN / m的平衡表面张力，其由临界胶束浓度的至少一种表面活性剂A在水中的溶液测定。 疏水化剂B被选择为使得水与基底的接触角通过使接触基底与水分散体B在水中的溶液相比在接触之前与水接触角相接触而增加5-95°。

公开(公告)号：US20150323871A1

公开(公告)日：2015-11-12

申请号：US14652120

申请日：2013-12-04

Applicant: BASF SE

Inventor： Andreas Klipp ,  Andrei Honciuc ,  Günter Oetter ,  Christian Bittner

IPC: G03F7/42

CPC classification number: G03F7/422 ,  C11D1/835 ,  C11D1/94 ,  C11D11/0047 ,  G03F7/2041 ,  G03F7/405 ,  H01L21/02057 ,  H01L21/0273

Abstract: In a method of treating a substrate including patterns having line-space dimensions of 50 nm or below, the substrate is rinsed by an aqueous composition including at least one non-ionic surfactant A and at least one hydrophobizer B. The at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration. The hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5-95° compared to the contact angle of water to the substrate before such contacting.

Abstract translation: 在处理包括线空间尺寸为50nm或更小的图案的基材的方法中，通过包含至少一种非离子表面活性剂A和至少一种疏水化剂B的水性组合物漂洗基材。至少一种表面活性剂A 具有10mN / m至35mN / m的平衡表面张力，其由临界胶束浓度的至少一种表面活性剂A在水中的溶液测定。 疏水化剂B被选择为使得水与基底的接触角通过使接触基底与水分散体B在水中的溶液相比在接触之前与水接触角相接触而增加5-95°。

公开(公告)号：US20150044839A1

公开(公告)日：2015-02-12

申请号：US14381039

申请日：2013-03-18

Applicant: BASF SE

Inventor： Simon Braun ,  Christian Bittner ,  Andreas Klipp

IPC: G03F7/42 ,  H01L29/161 ,  H01L29/16 ,  H01L21/02 ,  H01L21/265 ,  H01L21/266 ,  H01L21/027 ,  C11D7/50 ,  H01L29/66

CPC classification number: G03F7/426 ,  C11D7/5004 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/02057 ,  H01L21/0271 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/31133 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66477

Abstract: A photoresist stripping and cleaning composition free from N-alkylpyrrolidones and added quaternary ammonium hydroxides comprising a component (A) which comprises the polar organic solvents N-methylimidazole, dimethylsulfoxide and 1-aminopropane-2-ol.

Abstract translation: 不含N-烷基吡咯烷酮的光致抗蚀剂剥离和清洁组合物和加入的季铵氢氧化物，其包含组分（A），其包含极性有机溶剂N-甲基咪唑，二甲基亚砜和1-氨基丙烷-2-醇。

公开(公告)号：US12084628B2

公开(公告)日：2024-09-10

申请号：US16762275

申请日：2018-11-26

Applicant: BASF SE

Inventor： I Chen Chou ,  Andreas Klipp ,  Berthold Ferstl

IPC: C11D1/66 ,  C11D1/00 ,  C11D1/722 ,  C11D1/83 ,  C11D3/20 ,  C11D3/24 ,  C11D3/30 ,  G03F7/40 ,  H01L21/02 ,  C11D1/72

CPC classification number: C11D1/83 ,  C11D1/006 ,  C11D1/66 ,  C11D1/722 ,  C11D3/245 ,  G03F7/40 ,  H01L21/02057 ,  C11D1/004 ,  C11D1/72 ,  C11D2111/22

Abstract: Described is a composition comprising as primary surfactant an ionic compound comprising one or more fluoroalkyl groups and as secondary surfactant at least one non-ionic compound comprising one or more polyalkyloxy and/or polyalkylenoxy groups, for cleaning or rinsing a product, preferably a product used in the semiconductor industry, and a respective use of said composition. Further described is a method of making a cleaned or rinsed product, preferably a product used in the semiconductor industry, comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below, comprising the step of cleaning or rinsing said product with the composition of the invention.

公开(公告)号：US11742197B2

公开(公告)日：2023-08-29

申请号：US17044928

申请日：2019-04-02

Applicant: BASF SE

Inventor： Andreas Klipp ,  Christian Bittner ,  Simon Braun ,  Guenter Oetter ,  Yeni Burk

IPC: H01L21/02 ,  C07C271/12

CPC classification number: H01L21/02057 ,  C07C271/12

Abstract: The use of an organic compound as cleavable additive, preferably as cleavable surfactant, in the modification and/or treatment of at least one surface of a semiconductor substrate is described. Moreover, it is described a method of making a semiconductor substrate, comprising contacting at least one surface thereof with an organic compound, or with a composition comprising it, to treat or modify said surface, cleaving said organic compound into a set of fragments and removing said set of fragments from the contacted surface. More in particular, a method of cleaning or rinsing a semiconductor substrate or an intermediate semiconductor substrate is described. In addition, a compound is described which is suitable for the uses and methods pointed out above and which preferably is a cleavable surfactant.