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    Field emission display cathode assembly government rights
    13.
    发明授权
    Field emission display cathode assembly government rights 失效
    场发射显示阴极组件政府权利

    公开(公告)号：US6015323A

    公开(公告)日：2000-01-18

    申请号：US775964

    申请日：1997-01-03

    Applicant: Behnam Moradi ,  Kanwal K. Raina ,  Michael J. Westphal

    Inventor： Behnam Moradi ,  Kanwal K. Raina ,  Michael J. Westphal

    IPC: H01J9/02

    CPC classification number: H01J9/025 ,  H01J2329/00

    Abstract: Improved field emission display includes a buffer layer of copper, aluminum, silicon nitride or doped or undoped amorphous, poly, or microcrystalline silicon located between a chromium gate electrode and associated dielectric layer in a cathode assembly. The buffer layer substantially reduces or eliminates the occurrence of an adverse chemical reaction between the chromium gate electrode and dielectric layer.

    Abstract translation: 改进的场致发射显示器包括位于阴极组件中的铬栅电极和相关介电层之间的铜，铝，氮化硅或掺杂或未掺杂的非晶，多晶或微晶硅的缓冲层。 缓冲层基本上减少或消除了铬栅电极和电介质层之间不利的化学反应的发生。

    METHOD OF FORMING MEMORY DEVICES BY PERFORMING HALOGEN ION IMPLANTATION AND DIFFUSION PROCESSES
    14.
    发明申请
    METHOD OF FORMING MEMORY DEVICES BY PERFORMING HALOGEN ION IMPLANTATION AND DIFFUSION PROCESSES 有权
    通过实施卤素离子植入和扩散过程形成记忆体装置的方法

    公开(公告)号：US20080014698A1

    公开(公告)日：2008-01-17

    申请号：US11457620

    申请日：2006-07-14

    Applicant: Kirk Prall ,  Behnam Moradi ,  Seiichi Aritome ,  Di Li ,  Chris Larsen

    Inventor： Kirk Prall ,  Behnam Moradi ,  Seiichi Aritome ,  Di Li ,  Chris Larsen

    IPC: H01L21/336

    CPC classification number: H01L29/66825 ,  H01L21/22 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/324 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/6659 ,  H01L29/66659 ,  H01L29/788

    Abstract: Disclosed is a method of forming memory devices employing halogen ion implantation and diffusion processes. In one illustrative embodiment, the method includes forming a plurality of word line structures above a semiconducting substrate, each of the word line structures comprising a gate insulation layer, performing an LDD ion implantation process to form LDD doped regions in the substrate between the word line structures, performing a halogen ion implantation process to implant atoms of halogen into the semiconducting substrate between the word line structures, and performing at least one anneal process to cause at least some of the atoms of halogen to diffuse into the gate insulation layers on adjacent word line structures.

    Abstract translation: 公开了一种使用卤素离子注入和扩散工艺形成存储器件的方法。 在一个说明性实施例中，该方法包括在半导体衬底上形成多个字线结构，每个字线结构包括栅极绝缘层，执行LDD离子注入工艺，以在字线之间的衬底中形成LDD掺杂区域 结构，执行卤素离子注入工艺，以将卤素原子植入到半导体衬底中的字线结构之间，以及执行至少一个退火工艺，以使至少一些卤素原子扩散到相邻字的栅极绝缘层中 线结构。

    Methods of forming capacitors
    15.
    发明授权
    Methods of forming capacitors 失效
    形成电容器的方法

    公开(公告)号：US06607965B2

    公开(公告)日：2003-08-19

    申请号：US09997965

    申请日：2001-11-29

    Applicant: Behnam Moradi ,  Er-Xuan Ping ,  Lingyi A. Zheng ,  John Packard

    Inventor： Behnam Moradi ,  Er-Xuan Ping ,  Lingyi A. Zheng ,  John Packard

    IPC: H01L2120

    CPC classification number: H01L21/02326 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3144 ,  H01L28/40 ,  H01L28/84 ,  Y10S438/964

    Abstract: The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion of a dielectric material. After the nitrogen-comprising layer is formed, at least some of the substrate is subjected to dry oxidation with one or both of NO and N2O to form a second portion of the dielectric material. The invention also encompasses a method of forming a capacitor. A layer of rugged silicon is formed over a substrate, and a nitrogen-comprising layer is formed on the layer of rugged silicon. Some of the rugged silicon is exposed through the nitrogen-comprising layer. After the nitrogen-comprising layer is formed, at least some of the exposed rugged silicon is subjected to dry oxidation conditions with one or both of NO and N2O. Subsequently, a conductive material layer is formed over the nitrogen-comprising layer.

    Abstract translation: 本发明包括形成电介质材料的方法。 在坚固的多晶硅衬底的至少一些表面上形成含氮层以形成介电材料的第一部分。 在形成含氮层之后，至少一些基底用NO和N 2 O中的一种或两种进行干式氧化以形成介电材料的第二部分。 本发明还包括形成电容器的方法。 在衬底上形成一层坚固的硅，并且在坚固的硅层上形成含氮层。 一些粗糙的硅通过含氮层露出。 在形成含氮层之后，暴露的粗糙硅中的至少一些经受具有NO和N 2 O中的一种或两种的干燥氧化条件。 随后，在含氮层上形成导电材料层。

    Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layer
    16.
    发明授权
    Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layer 失效
    电容器结构包括在坚固的多晶硅层上的含氮层

    公开(公告)号：US06583441B2

    公开(公告)日：2003-06-24

    申请号：US09997620

    申请日：2001-11-29

    Applicant: Behnam Moradi ,  Er-Xuan Ping ,  Lingyi A. Zheng ,  John Packard

    Inventor： Behnam Moradi ,  Er-Xuan Ping ,  Lingyi A. Zheng ,  John Packard

    IPC: H01L27108

    CPC classification number: H01L21/02326 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3144 ,  H01L28/40 ,  H01L28/84 ,  Y10S438/964

    Abstract: The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion of a dielectric material. After the nitrogen-comprising layer is formed, at least some of the substrate is subjected to dry oxidation with one or both of NO and N2O to form a second portion of the dielectric material. The invention also encompasses a method of forming a capacitor. A layer of rugged silicon is formed over a substrate, and a nitrogen-comprising layer is formed on the layer of rugged silicon. Some of the rugged silicon is exposed through the nitrogen-comprising layer. After the nitrogen-comprising layer is formed, at least some of the exposed rugged silicon is subjected to dry oxidation conditions with one or both of NO and N2O. Subsequently, a conductive material layer is formed over the nitrogen-comprising layer. Additionally, the invention encompasses a capacitor structure. The structure includes a first capacitor electrode comprising a rugged polysilicon layer, a nitrogen-comprising layer on the rugged polysilicon layer, and a second capacitor electrode. The nitrogen-comprising layer is between the first and second capacitor electrodes.

    Abstract translation: 本发明包括形成电介质材料的方法。 在坚固的多晶硅衬底的至少一些表面上形成含氮层以形成介电材料的第一部分。 在形成含氮层之后，至少一些基底用NO和N 2 O中的一种或两种进行干式氧化以形成介电材料的第二部分。 本发明还包括形成电容器的方法。 在衬底上形成一层坚固的硅，并且在坚固的硅层上形成含氮层。 一些粗糙的硅通过含氮层露出。 在形成含氮层之后，暴露的粗糙硅中的至少一些经受具有NO和N 2 O中的一种或两种的干燥氧化条件。 随后，在含氮层上形成导电材料层。 另外，本发明包括电容器结构。 该结构包括第一电容器电极，其包括坚固的多晶硅层，在凹凸多晶硅层上的含氮层和第二电容器电极。 含氮层位于第一和第二电容器电极之间。

    Light-insensitive resistor for current-limiting of field emission displays
    17.
    发明授权
    Light-insensitive resistor for current-limiting of field emission displays 失效
    用于场发射显示器限流的光敏电阻器

    公开(公告)号：US06507329B2

    公开(公告)日：2003-01-14

    申请号：US09774812

    申请日：2001-01-30

    Applicant: David A. Cathey, Jr. ,  Kevin W. Tjaden ,  Behnam Moradi ,  John K. Lee ,  James J. Alwan

    Inventor： David A. Cathey, Jr. ,  Kevin W. Tjaden ,  Behnam Moradi ,  John K. Lee ,  James J. Alwan

    IPC: G09G322

    CPC classification number: H01J1/3042 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.

    Abstract translation: 用于场发射显示器的半导体器件包括由半导体材料，玻璃，钠钙或塑料形成的衬底。 在基板上形成第一导电材料层。 在第一层上形成第二层微晶硅。 该层具有响应于在场发射显示器的操作期间变化的条件，特别是来自发射的电子或来自环境的变化的光强度而不波动的特性。 在第二层上形成一个或多个冷阴极发射体。

    Field emission displays with reduced light leakage
    18.
    发明授权
    Field emission displays with reduced light leakage 有权
    具有减少漏光的场发射显示

    公开(公告)号：US06228667B1

    公开(公告)日：2001-05-08

    申请号：US09607563

    申请日：2000-06-29

    Applicant: David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

    Inventor： David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

    IPC: H01L2100

    CPC classification number: H01J3/021 ,  H01J9/148 ,  H01J29/467 ,  H01J31/127 ,  H01J2203/0232 ,  H01J2329/463

    Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. It the silicided layer is treated at a temperature above 1000° C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

    Abstract translation: 半导体器件可以通过在诸如用于形成场致发射显示器的提取器的硅材料上形成硅化物层而制成。 硅化物层可以与场发射显示器的发射极自对准。 硅化物层通过暴露于氮源在高于1000℃的温度下进行处理，硅化物耐受后续的化学侵蚀，例如参与缓冲氧化物蚀刻工艺的化学侵蚀。

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