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公开(公告)号：US11972948B2
公开(公告)日：2024-04-30
申请号：US16439377
申请日：2019-06-12
Applicant: Brewer Science, Inc.
Inventor： Andrea M. Chacko , Vandana Krishnamurthy , Yichen Liang , Hao Lee , Stephen Grannemann , Douglas J. Guerrero
IPC: G03F7/00 , G03F1/24 , H01L21/02 , H01L21/027
CPC classification number: H01L21/0274 , G03F1/24 , G03F7/70033 , H01L21/02115 , H01L21/02282 , H01L21/02304 , H01L21/02422
Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.
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公开(公告)号：US09249013B2
公开(公告)日：2016-02-02
申请号：US13862720
申请日：2013-04-15
Applicant: Brewer Science Inc.
Inventor： Yubao Wang , Mary Ann Hockey , Douglas J. Guerrero , Vandana Krishnamurthy , Robert C. Cox
IPC: G03F7/26 , B81C1/00 , B81B1/00 , H01L21/02 , H01L21/033 , H01L21/311
CPC classification number: B81C1/0038 , B81B1/00 , B81C1/00031 , B81C2201/0149 , G03F7/0002 , G03F7/26 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/0337 , H01L21/31144 , Y10T428/24612 , Y10T428/24802
Abstract: Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.
Abstract translation: 提供了用于定向自组装图案化技术的组合物，其避免在该过程中需要单独的抗反射涂层和刷中性层。 还提供了用于定向自组装的方法，其中诸如定向自组装嵌段共聚物的自组装材料可以直接施加到硅硬掩模中性层，然后自组装形成所需图案。 本文还公开了定向自组装图案结构。
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公开(公告)号：US20130273330A1
公开(公告)日：2013-10-17
申请号：US13862720
申请日：2013-04-15
Applicant: BREWER SCIENCE INC.
Inventor： Yubao Wang , Mary Ann Hockey , Douglas J. Guerrero , Vandana Krishnamurthy , Robert C. Cox
CPC classification number: B81C1/0038 , B81B1/00 , B81C1/00031 , B81C2201/0149 , G03F7/0002 , G03F7/26 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/0337 , H01L21/31144 , Y10T428/24612 , Y10T428/24802
Abstract: Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.
Abstract translation: 提供了用于定向自组装图案化技术的组合物，其避免在该过程中需要单独的抗反射涂层和刷中性层。 还提供了用于定向自组装的方法，其中诸如定向自组装嵌段共聚物的自组装材料可以直接施加到硅硬掩模中性层，然后自组装形成所需图案。 本文还公开了定向自组装图案结构。
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公开(公告)号：US20130089716A1
公开(公告)日：2013-04-11
申请号：US13648890
申请日：2012-10-10
Applicant: Brewer Science Inc.
Inventor： Vandana Krishnamurthy , Daniel M. Sullivan , Yubao Wang , Qin Lin , Sean Simmons
CPC classification number: B32B33/00 , B32B9/04 , B32B2255/26 , B32B2307/70 , B32B2379/08 , C08G73/00 , C08G73/1067 , C08G73/1075 , C08G73/1078 , C09D179/08 , G03F7/094 , H01L21/0332 , H01L21/3081 , Y10T428/24802 , Y10T428/24851 , Y10T428/30 , Y10T428/31623 , Y10T428/31667 , Y10T428/31681 , Y10T428/31721
Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.
Abstract translation: 本文描述的本发明涉及在溶剂体系中包含聚酰胺酸组合物和交联剂的旋涂碳材料。 这些材料在三层光刻工艺中是有用的。 用本发明组合物制成的薄膜不溶于通常用于平版印刷材料的溶剂中，例如但不限于PGME，PGMEA和环己酮。 然而，这些膜可以溶解在通常用于光刻中的显影剂中。 在一个实施方案中，可以在高温下加热膜以改善用于高温处理的热稳定性。 不管实施例如何，材料可以应用于平面/平面或图案化表面。 有利地，该材料在使用碳氟化合物蚀刻的图案转移到硅衬底期间表现出摆动阻力。
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