利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

42 条记录 (耗时 0.046 秒)

    Vertical III-Nitride Light Emitting Diodes on Patterned Substrates with Embedded Bottom Electrodes
    11.
    发明申请
    Vertical III-Nitride Light Emitting Diodes on Patterned Substrates with Embedded Bottom Electrodes 审中-公开
    垂直III型氮化物发光二极管在嵌有底部电极的图案衬底上

    公开(公告)号：US20100012954A1

    公开(公告)日：2010-01-21

    申请号：US12191033

    申请日：2008-08-13

    申请人： Chen-Hua Yu ,  Chia-Lin Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Hung-Ta Lin

    发明人： Chen-Hua Yu ,  Chia-Lin Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Hung-Ta Lin

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/38 ,  H01L2933/0016

    摘要： A light emitting diode (LED) device is presented. The LED device includes a substrate, a layered LED structure, and an embedded bottom electrode. The layered LED structure includes a buffer/nucleation layer disposed on the substrate, an active layer, and a top-side contact. A first-contact III-nitride layer is interposed between the buffer/nucleation layer and the active layer. A second-contact III-nitride layer is interposed between the active well layer and the top-side contact. A bottom electrode extends through the substrate, through the buffer/nucleation layer and terminates within the first-contact III-nitride layer.

    摘要翻译： 提出了一种发光二极管（LED）装置。 LED器件包括衬底，层状LED结构和嵌入式底部电极。 分层LED结构包括设置在基板上的缓冲/成核层，有源层和顶侧接触。 第一接触III族氮化物层介于缓冲层/成核层与有源层之间。 第二接触III族氮化物层介于活性阱层和顶侧接触之间。 底部电极延伸通过衬底，通过缓冲/成核层并终止于第一接触III族氮化物层内。

    Light-emitting diode with textured substrate
    12.
    发明授权
    Light-emitting diode with textured substrate 有权
    具纹理衬底的发光二极管

    公开(公告)号：US08659033B2

    公开(公告)日：2014-02-25

    申请号：US13267701

    申请日：2011-10-06

    申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu ,  Hung-Ta Lin

    发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu ,  Hung-Ta Lin

    IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32

    摘要： A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.

    摘要翻译： 提供了一种发光二极管（LED）装置。 LED装置已经凸起形成在基板上的半导体区域。 在凸起的半导体区域上形成LED结构，使得LED器件的底部接触层和有源层是保形层。 顶部接触层具有平坦的表面。 在一个实施例中，顶部接触层在多个凸起的半导体区域上是连续的，而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。

    Light-Emitting Diodes on Concave Texture Substrate
    13.
    发明申请
    Light-Emitting Diodes on Concave Texture Substrate 有权
    凹面纹理基板上的发光二极管

    公开(公告)号：US20120119236A1

    公开(公告)日：2012-05-17

    申请号：US13358327

    申请日：2012-01-25

    申请人： Chen-Hua Yu ,  Hung-Ta Lin ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu

    发明人： Chen-Hua Yu ,  Hung-Ta Lin ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu

    IPC分类号： H01L27/15 ,  H01L33/48

    CPC分类号： H01L33/48 ,  H01L33/20 ,  H01L33/24

    摘要： A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.

    摘要翻译： 提供了一种形成在凹面纹理基板上的发光二极管（LED）的半导体器件。 对衬底进行图案化和蚀刻以形成凹陷。 沿着凹部的底部形成分离层。 沿着侧壁和任选地沿着相邻凹部之间的基板的表面形成LED结构。 在这些实施例中，与平面表面相比，LED结构的表面积增加。 在另一个实施例中，LED结构形成在凹部内，使得底部接触层与凹部的拓扑不一致。 在这些实施例中，硅衬底中的凹陷导致底接触层中的立方结构，例如具有非极性特性并且表现出更高外部量子效率的n-GaN层。

    Light-emitting diode with textured substrate
    14.
    发明授权
    Light-emitting diode with textured substrate 有权
    具纹理衬底的发光二极管

    公开(公告)号：US08058082B2

    公开(公告)日：2011-11-15

    申请号：US12189635

    申请日：2008-08-11

    申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu ,  Hung-Ta Lin

    发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu ,  Hung-Ta Lin

    IPC分类号： H01L21/00

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32

    摘要： A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.

    摘要翻译： 提供了一种发光二极管（LED）装置。 LED装置已经凸起形成在基板上的半导体区域。 在凸起的半导体区域上形成LED结构，使得LED器件的底部接触层和有源层是保形层。 顶部接触层具有平坦的表面。 在一个实施例中，顶部接触层在多个凸起的半导体区域上是连续的，而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。

    III-V compound semiconductor epitaxy from a non-III-V substrate
    17.
    发明授权
    III-V compound semiconductor epitaxy from a non-III-V substrate 有权
    III-V族化合物半导体外延从非III-V衬底

    公开(公告)号：US08377796B2

    公开(公告)日：2013-02-19

    申请号：US12539374

    申请日：2009-08-11

    申请人： Chia-Lin Yu ,  Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

    发明人： Chia-Lin Yu ,  Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

    IPC分类号： H01L21/768

    CPC分类号： H01L21/02365 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L29/12

    摘要： A method of forming a circuit structure includes providing a substrate; forming recesses in the substrate; forming a mask layer over the substrate, wherein the mask layer covers non-recessed portions of the substrate, with the recesses exposed through openings in the mask layer; forming a buffer/nucleation layer on exposed portions of the substrate in the recesses; and growing a group-III group-V (III-V) compound semiconductor material from the recesses until portions of the III-V compound semiconductor material grown from the recesses join each other to form a continuous III-V compound semiconductor layer.

    摘要翻译： 形成电路结构的方法包括提供基板; 在基板上形成凹部; 在所述基板上形成掩模层，其中所述掩模层覆盖所述基板的非凹部，所述凹部通过所述掩模层中的开口暴露; 在所述凹部中的所述基板的暴露部分上形成缓冲/成核层; 以及从所述凹部生长第III族V族化合物半导体材料，直到从所述凹部生长的所述III-V族化合物半导体材料的部分相互连接形成连续的III-V族化合物半导体层。

    III-V Compound Semiconductor Epitaxy From a Non-III-V Substrate
    18.
    发明申请
    III-V Compound Semiconductor Epitaxy From a Non-III-V Substrate 有权
    III-V族化合物半导体外延从非III-V基片

    公开(公告)号：US20100068866A1

    公开(公告)日：2010-03-18

    申请号：US12539374

    申请日：2009-08-11

    申请人： Chia-Lin Yu ,  Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

    发明人： Chia-Lin Yu ,  Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

    IPC分类号： H01L21/768

    CPC分类号： H01L21/02365 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L29/12

    摘要： A method of forming a circuit structure includes providing a substrate; forming recesses in the substrate; forming a mask layer over the substrate, wherein the mask layer covers non-recessed portions of the substrate, with the recesses exposed through openings in the mask layer; forming a buffer/nucleation layer on exposed portions of the substrate in the recesses; and growing a group-III group-V (III-V) compound semiconductor material from the recesses until portions of the III-V compound semiconductor material grown from the recesses join each other to form a continuous III-V compound semiconductor layer.

    摘要翻译： 形成电路结构的方法包括提供基板; 在基板上形成凹部; 在所述基板上形成掩模层，其中所述掩模层覆盖所述基板的非凹部，所述凹部通过所述掩模层中的开口暴露; 在所述凹部中的所述基板的暴露部分上形成缓冲/成核层; 以及从所述凹部生长第III族V族化合物半导体材料，直到从所述凹部生长的所述III-V族化合物半导体材料的部分相互连接形成连续的III-V族化合物半导体层。