公开(公告)号：US20120243572A1

公开(公告)日：2012-09-27

申请号：US13428198

申请日：2012-03-23

申请人： Tatsuo MATSUDO ,  Chishio KOSHIMIZU

发明人： Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC分类号： G01K11/32

CPC分类号： G01K11/12 ,  G01J5/0007 ,  G01J5/0044 ,  G01J5/0821 ,  G01J2005/583

摘要： A temperature measuring apparatus and a temperature measuring method that may simultaneously measure temperatures of objects in processing chambers. The temperature measuring apparatus includes a first light separating unit which divides light from the light source into measurement lights; second light separating units which divide the measurement lights from the first light separating unit into measurement lights and reference lights; third light separating units which further divide the measurement lights into first to n-th measurement lights; a reference light reflecting unit which reflects the reference lights; an light path length changing unit which changes light path lengths of the reference lights reflected by the reference light reflecting unit; and photodetectors which measure interference between the first to n-th measurement lights reflected by the objects to be measured and the reference lights reflected by the reference light reflecting unit.

摘要翻译： 可以同时测量处理室中的物体的温度的温度测量装置和温度测量方法。 温度测量装置包括：将来自光源的光分成测量光的第一光分离单元; 第二光分离单元，其将测量光从第一光分离单元分离成测量光和参考光; 第三光分离单元，其进一步将测量光分为第一至第n测量光; 反射参考光的参考光反射单元; 光路长度改变单元，改变由参考光反射单元反射的参考光的光路长度; 以及光检测器，其测量由被测量物体反射的第一至第n测量光与由参考光反射单元反射的参考光之间的干涉。

公开(公告)号：US20120073781A1

公开(公告)日：2012-03-29

申请号：US13240274

申请日：2011-09-22

申请人： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Tatsuo MATSUDO ,  Kenji NAGAI

发明人： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Tatsuo MATSUDO ,  Kenji NAGAI

IPC分类号： B60H1/00

CPC分类号： H01L21/67248 ,  G01J9/02 ,  G01J2005/583

摘要： The temperature control system includes: a susceptor which allows an object to be processed to be held on a top surface thereof and includes a flow path, through which a temperature adjusting medium flows, formed therein; a temperature measuring unit which measures a temperature of the object to be processed held on the top surface of the susceptor; a first temperature adjusting unit which adjusts a temperature of the temperature adjusting medium flowing through the flow path; and a second temperature adjusting unit which is disposed between the susceptor and the first temperature adjusting unit, and adjusts a temperature of the temperature adjusting medium based on a result of the measurement of the temperature measuring unit.

摘要翻译： 温度控制系统包括：一个允许被处理物体被保持在其顶面上的基座，并且包括在其中形成温度调节介质流过的流路; 温度测量单元，其测量保持在所述基座的顶表面上的被处理物体的温度; 第一温度调节单元，其调节流过所述流路的温度调节介质的温度; 以及第二温度调节单元，其设置在所述基座和所述第一温度调节单元之间，并且基于所述温度测量单元的测量结果来调节所述温度调节介质的温度。

公开(公告)号：US20080236747A1

公开(公告)日：2008-10-02

申请号：US12057940

申请日：2008-03-28

申请人： Tatsuo MATSUDO ,  Chishio KOSHIMIZU ,  Tomohiro SUZUKI ,  Jun Abe

发明人： Tatsuo MATSUDO ,  Chishio KOSHIMIZU ,  Tomohiro SUZUKI ,  Jun Abe

IPC分类号： G01B11/02 ,  G01N25/00 ,  H01J49/26 ,  C23F1/00

CPC分类号： H01J49/16 ,  G01K5/486 ,  G01K11/12

摘要： A gas analyzing apparatus includes a measurement chamber having a mounting member for mounting thereon a substrate on which a sample is adsorbed; a depressurizing mechanism for depressurizing the inside of the measurement chamber; and a heating unit for heating the substrate having the adsorbed sample thereon and mounted on the mounting member. The apparatus further includes: a mass spectrometer inserted in the measurement chamber, for detecting gas molecules escaping from the sample with an increasing temperature; and a temperature measuring unit for measuring a temperature of the substrate having the adsorbed sample thereon by using an interferometer which detects an optical thickness of the substrate.

摘要翻译： 气体分析装置包括测量室，其具有用于安装其上吸附有样品的基板的安装构件; 用于减压测量室内部的减压机构; 以及加热单元，用于将其上具有吸附样品的基板加热并安装在安装构件上。 该装置还包括：插入测量室中的质谱仪，用于检测随着温度升高从样品中逸出的气体分子; 以及温度测量单元，用于通过使用检测基板的光学厚度的干涉仪来测量其上具有吸附样品的基板的温度。

公开(公告)号：US20130008609A1

公开(公告)日：2013-01-10

申请号：US13618587

申请日：2012-09-14

申请人： Chishio KOSHIMIZU ,  Naoki MATSUMOTO ,  Satoshi TANAKA ,  Toru ITO

发明人： Chishio KOSHIMIZU ,  Naoki MATSUMOTO ,  Satoshi TANAKA ,  Toru ITO

IPC分类号： C23F1/08

CPC分类号： H01J37/21 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32348 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32642 ,  H01J2237/21 ,  H01J2237/334

摘要： A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

摘要翻译： 等离子体处理装置包括处理室，第一电极和彼此相对配置的第二电极，用于向第一电极或第二电极施加高频电力的高频电源单元，用于 将处理气体供给到处理空间，以及设置在第一电极的主表面上的基板安装部的主电介质部件。 聚焦环安装在第一电极上以覆盖第一电极的主表面的周边部分，并且在第一电极的主表面的周边部分设置外围电介质构件，使得每单位面积的静电电容 在第一电极和聚焦环之间的距离小于通过主电介质构件施加在第一电极和衬底之间的位置。

公开(公告)号：US20120247954A1

公开(公告)日：2012-10-04

申请号：US13432623

申请日：2012-03-28

申请人： Jun YAMAWAKU ,  Chishio KOSHIMIZU

发明人： Jun YAMAWAKU ,  Chishio KOSHIMIZU

IPC分类号： C23F4/00

CPC分类号： H01J37/32091 ,  H01J37/32642 ,  H01J37/32715

摘要： Disclosed is a capacitively-coupled plasma etching apparatus, in which a focus ring is provided surrounding a substrate placing area of a placing table for adjusting a state of plasma. A ring type insulating member is installed along the focus ring between the top surface of the placing table and the bottom surface of the focus ring, and a heat transfer member is installed between the top surface of the placing table and the bottom surface of the focus ring to be closely attached to the top surface and the bottom surface at a position adjacent to the insulating member in a diameter direction of a wafer. During the plasma processing, the heat in the focus ring is transferred to the placing table through the heat transfer member to be cooled down and the amount of sediment attached to the rear surface of the wafer can be reduced.

摘要翻译： 公开了一种电容耦合等离子体蚀刻装置，其中围绕用于调节等离子体状态的放置台的基板放置区域设置聚焦环。 环形绝缘构件沿着聚焦环安装在放置台的顶表面和聚焦环的底表面之间，传热构件安装在放置台的顶表面和焦点的底表面之间 环在晶片的直径方向上在与绝缘构件相邻的位置处紧密附着到顶表面和底表面。 在等离子体处理期间，聚焦环中的热量通过传热构件传递到放置台以被冷却，并且可以减少附着到晶片的后表面的沉积物的量。

公开(公告)号：US20120175063A1

公开(公告)日：2012-07-12

申请号：US13344267

申请日：2012-01-05

申请人： Jun YAMAWAKU ,  Chishio KOSHIMIZU

发明人： Jun YAMAWAKU ,  Chishio KOSHIMIZU

IPC分类号： H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32559 ,  H01J37/32642 ,  H01L21/68735

摘要： A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.

摘要翻译： 一种基板处理装置，其能够在不降低基板处理装置的加工率的情况下，除去附着在两个部件之间的间隙中的两个部件之间的间隙附近的沉积物，温度彼此大不相同。 在基板处理装置中，室接收晶片，聚焦环围绕设置在室中的晶片，侧面保护构件透射激光束，激光束照射装置将激光束照射到侧面保护构件， 聚焦环的内聚焦环与晶片相邻地设置并被冷却，并且外聚焦环围绕内聚焦环，并且在聚焦环中不被冷却，并且侧表面保护构件的面对表面 在内聚焦环和外聚焦环之间。

公开(公告)号：US20120062870A1

公开(公告)日：2012-03-15

申请号：US13231037

申请日：2011-09-13

申请人： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Tatsuo MATSUDO ,  Kenji NAGAI

发明人： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Tatsuo MATSUDO ,  Kenji NAGAI

IPC分类号： G01B9/02

CPC分类号： G01K11/125 ,  G01B9/02007 ,  G01B9/02021 ,  G01B9/02025 ,  G01B9/0209

摘要： The physical state measuring apparatus includes: a light source; a transmitting unit which transmits a light from the light source to a measurement point of an object to be measured; a nonlinear optical device which changes a wavelength of the light reflected by the measurement point to a wavelength that is different from the wavelength before the changing; a light receiving unit which receives the light whose wavelength has been changed; and a measuring unit which measures a physical state of the object to be measured at the measurement point based on a waveform of the light received by the light receiving unit.

摘要翻译： 物理状态测量装置包括：光源; 发送单元，其将来自所述光源的光发送到待测量对象的测量点; 将由测量点反射的光的波长改变为与变化前的波长不同的波长的非线性光学装置; 接收波长已经改变的光的光接收单元; 以及测量单元，其基于由所述光接收单元接收的光的波形来测量所述测量点处的被测量物体的物理状态。

公开(公告)号：US20110114599A1

公开(公告)日：2011-05-19

申请号：US13014155

申请日：2011-01-26

申请人： Chishio KOSHIMIZU ,  Naoki Matsumoto

发明人： Chishio KOSHIMIZU ,  Naoki Matsumoto

IPC分类号： C23F1/00 ,  H05H1/24

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32706

摘要： A plasma processing apparatus includes a plurality of radio-frequency power supplies for supplying radio-frequency powers having frequencies different from each other, a common feeding line for superposing radio-frequency powers supplied respectively from the plurality of radio-frequency power supplies and feeding the superposed radio-frequency power to a same radio-frequency electrode, a radio-frequency power extracting device for extracting radio-frequency powers having predetermined frequencies from radio-frequency powers fed via the feeding line, and a radio-frequency voltage detector for measuring voltages of the radio-frequency powers having the predetermined frequencies extracted by the radio-frequency power extracting device.

摘要翻译： 等离子体处理装置包括多个用于提供具有彼此不同频率的射频功率的高频电源，用于叠加从多个射频电源分别提供的射频功率的馈电线， 将叠加的射频电力叠加到同一射频电极，用于从经由馈电线馈送的射频功率提取具有预定频率的射频功率的射频功率提取装置和用于测量电压的射频电压检测器 具有由射频功率提取装置提取的预定频率的射频功率。

公开(公告)号：US20080236754A1

公开(公告)日：2008-10-02

申请号：US12056567

申请日：2008-03-27

申请人： Chishio KOSHIMIZU

发明人： Chishio KOSHIMIZU

IPC分类号： C23C16/505 ,  C23F1/02

CPC分类号： H01J37/32559 ,  H01J37/32091 ,  H01J2237/022 ,  H01L21/67069

摘要： A plasma processing apparatus, which generates a plasma by a radio frequency discharge in a processing chamber, includes a first member having a first front surface facing the plasma, and a first mating surface extending from the first front surface; and a second member having a second front surface that forms an angled portion together with the first front surface of the first member in a manner to face the plasma, and a second mating surface facing the first mating surface of the first member with a gap therebetween. In the angled portion, an opening portion of gap and an inner portion extending from the opening portion to at least an intermediate location of the gap are oriented along an extended straight line that bisects an angle between the first front surface of the first member and the second front surface of the second member.

摘要翻译： 一种等离子体处理装置，其通过处理室中的射频放电产生等离子体，包括具有面向等离子体的第一前表面的第一构件和从第一前表面延伸的第一配合表面; 以及具有第二前表面的第二构件，所述第二前表面以与所述等离子体相对的方式与所述第一构件的所述第一前表面一起形成成角度的部分，以及面对所述第一构件的所述第一配合表面的第二配合表面，其间具有间隙 。 在倾斜部分中，间隙的开口部分和从开口部分延伸到间隙的至少中间位置的内部部分沿着延伸的直线定向，该直线将第一部件的第一前表面和 第二构件的第二前表面。

公开(公告)号：US20080236750A1

公开(公告)日：2008-10-02

申请号：US12055839

申请日：2008-03-26

申请人： Chishio KOSHIMIZU

发明人： Chishio KOSHIMIZU

IPC分类号： C23C16/505 ,  C23F1/02

CPC分类号： H01J37/32165 ,  B08B7/0042 ,  H01J37/32091 ,  H01J37/32183

摘要： A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode attached to the processing chamber via an insulator. To generate a plasma of a processing gas in the processing space, a high frequency power supply unit applies to the first electrode a high frequency power having a predetermined high frequency. Further, to control energy of incident ions on the first and the second electrode from the plasma, a first low frequency power supply unit applies to the first electrode a first low frequency power having the frequency lower than the frequency of the high frequency power, and a second low frequency power supply unit applies to the second electrode a second low frequency power having the frequency lower than the frequency of the high frequency power.

摘要翻译： 等离子体处理装置包括处理室，第一电极和经由绝缘体附着到处理室的第二电极。 为了在处理空间中产生处理气体的等离子体，高频电源单元向第一电极施加具有预定高频的高频电力。 此外，为了从等离子体控制入射离子在第一和第二电极上的能量，第一低频电源单元向第一电极施加频率低于高频功率频率的第一低频功率，以及 第二低频电源单元向第二电极施加频率低于高频功率频率的第二低频功率。