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公开(公告)号：US09054121B2
公开(公告)日：2015-06-09
申请号：US13280075
申请日：2011-10-24
申请人： Ping-Yin Liu , Xin-Hua Huang , Hsin-Ting Huang , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
发明人： Ping-Yin Liu , Xin-Hua Huang , Hsin-Ting Huang , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
CPC分类号： B81B7/0058 , B81B3/0005 , B81B3/0021 , B81C1/00269 , B81C1/00793 , B81C2201/053 , B81C2203/0109 , H01G5/16 , H01L28/60
摘要： A method includes forming a MEMS device, forming a bond layer adjacent the MEMS device, and forming a protection layer over the bond layer. The steps of forming the bond layer and the protection layer include in-situ deposition of the bond layer and the protection layer.
摘要翻译： 一种方法包括形成MEMS器件，形成与MEMS器件相邻的接合层，并在接合层上形成保护层。 形成接合层和保护层的步骤包括接合层和保护层的原位沉积。
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公开(公告)号：US20110233621A1
公开(公告)日：2011-09-29
申请号：US12729911
申请日：2010-03-23
申请人： Martin Liu , Richard Chu , Hung-Hua Lin , H. T. Huang , Jung-Huei Peng , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
发明人： Martin Liu , Richard Chu , Hung-Hua Lin , H. T. Huang , Jung-Huei Peng , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
CPC分类号： H01L25/162 , B81B2207/012 , B81C1/00269 , B81C2203/0118 , B81C2203/035 , H01L21/187 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of bonding a plurality of substrates. In an embodiment, a first substrate includes a first bonding layer. The second substrate includes a second bonding layer. The first bonding layer includes silicon; the second bonding layer includes aluminum. The first substrate and the second substrate are bonded forming a bond region having an interface between the first bonding layer and the second bonding layer. A device having a bonding region between substrates is also provided. The bonding region includes an interface between a layer including silicon and a layer including aluminum.
摘要翻译： 本公开提供了一种接合多个基板的方法。 在一个实施例中，第一衬底包括第一接合层。 第二基板包括第二接合层。 第一接合层包括硅; 第二结合层包括铝。 第一基板和第二基板被接合形成在第一接合层和第二接合层之间具有界面的接合区域。 还提供了一种在衬底之间具有接合区域的器件。 接合区域包括在包括硅的层和包括铝的层之间的界面。
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公开(公告)号：US20130099355A1
公开(公告)日：2013-04-25
申请号：US13280075
申请日：2011-10-24
申请人： Ping-Yin Liu , Xin-Hua Huang , Hsin-Ting Huang , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
发明人： Ping-Yin Liu , Xin-Hua Huang , Hsin-Ting Huang , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
CPC分类号： B81B7/0058 , B81B3/0005 , B81B3/0021 , B81C1/00269 , B81C1/00793 , B81C2201/053 , B81C2203/0109 , H01G5/16 , H01L28/60
摘要： A method includes forming a MEMS device, forming a bond layer adjacent the MEMS device, and forming a protection layer over the bond layer. The steps of forming the bond layer and the protection layer include in-situ deposition of the bond layer and the protection layer
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公开(公告)号：US20120091598A1
公开(公告)日：2012-04-19
申请号：US12905358
申请日：2010-10-15
申请人： Chun-Ren Cheng , Yi-Hsien Chang , Allen Timothy Chang , Ching-Ray Chen , Li-Cheng Chu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao
发明人： Chun-Ren Cheng , Yi-Hsien Chang , Allen Timothy Chang , Ching-Ray Chen , Li-Cheng Chu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao
IPC分类号： H01L23/544 , H01L21/71
CPC分类号： B81C1/0038
摘要： A device is provided which includes a transparent substrate. An opaque layer is disposed on the transparent substrate. A conductive layer disposed on the opaque layer. The opaque layer and the conductive layer form a handling layer, which may be used to detect and/or align the transparent wafer during fabrication processes. In an embodiment, the conductive layer includes a highly-doped silicon layer. In an embodiment, the opaque layer includes a metal. In embodiment, the device may include a MEMs device.
摘要翻译： 提供了一种包括透明基板的装置。 在透明基板上设置不透明层。 设置在不透明层上的导电层。 不透明层和导电层形成处理层，其可用于在制造工艺期间检测和/或对准透明晶片。 在一个实施例中，导电层包括高度掺杂的硅层。 在一个实施例中，不透明层包括金属。 在实施例中，设备可以包括MEMs设备。
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公开(公告)号：US08647962B2
公开(公告)日：2014-02-11
申请号：US12729911
申请日：2010-03-23
申请人： Martin Liu , Richard Chu , Hung Hua Lin , Hsin-Ting Huang , Jung-Huei Peng , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
发明人： Martin Liu , Richard Chu , Hung Hua Lin , Hsin-Ting Huang , Jung-Huei Peng , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
CPC分类号： H01L25/162 , B81B2207/012 , B81C1/00269 , B81C2203/0118 , B81C2203/035 , H01L21/187 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of bonding a plurality of substrates. In an embodiment, a first substrate includes a first bonding layer. The second substrate includes a second bonding layer. The first bonding layer includes silicon; the second bonding layer includes aluminum. The first substrate and the second substrate are bonded forming a bond region having an interface between the first bonding layer and the second bonding layer. A device having a bonding region between substrates is also provided. The bonding region includes an interface between a layer including silicon and a layer including aluminum.
摘要翻译： 本公开提供了一种接合多个基板的方法。 在一个实施例中，第一衬底包括第一接合层。 第二基板包括第二接合层。 第一接合层包括硅; 第二结合层包括铝。 第一基板和第二基板被接合形成在第一接合层和第二接合层之间具有界面的接合区域。 还提供了一种在衬底之间具有接合区域的器件。 接合区域包括在包括硅的层和包括铝的层之间的界面。
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公开(公告)号：US08945344B2
公开(公告)日：2015-02-03
申请号：US13554751
申请日：2012-07-20
申请人： Xin-Hua Huang , Ping-Yin Liu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao , Chia-Shiung Tsai
发明人： Xin-Hua Huang , Ping-Yin Liu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao , Chia-Shiung Tsai
IPC分类号： B32B38/10
CPC分类号： H01L21/67092 , Y10T156/11 , Y10T156/1132 , Y10T156/1153 , Y10T156/1189 , Y10T156/1911 , Y10T156/1944 , Y10T156/1972
摘要： Systems and methods of separating bonded wafers are disclosed. In one embodiment, a system for separating bonded wafers includes a support for the bonded wafers and means for applying a sheer force to the bonded wafers. The system also includes means for applying a vacuum to the bonded wafers.
摘要翻译： 公开了分离键合晶片的系统和方法。 在一个实施例中，用于分离接合的晶片的系统包括用于接合的晶片的支撑件和用于向结合的晶片施加纯粹的力的装置。 该系统还包括用于向接合晶片施加真空的装置。
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公开(公告)号：US08735260B2
公开(公告)日：2014-05-27
申请号：US12966756
申请日：2010-12-13
申请人： Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Hung-Hua Lin , Ming-Tung Wu , Ping-Yin Liu , Yao-Te Huang , Yuan-Chih Hsieh
发明人： Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Hung-Hua Lin , Ming-Tung Wu , Ping-Yin Liu , Yao-Te Huang , Yuan-Chih Hsieh
CPC分类号： B81C1/00333 , B81B2207/07 , B81C1/00825 , B81C2201/053 , B81C2203/0109 , H01L2924/16235
摘要： The present disclosure provide a method of manufacturing a microelectronic device. The method includes forming a bonding pad on a first substrate; forming wiring pads on the first substrate; forming a protection material layer on the first substrate, on sidewalls and top surfaces of the wiring pads, and on sidewalls of the bonding pad, such that a top surface of the bonding pad is at least partially exposed; bonding the first substrate to a second substrate through the bonding pad; opening the second substrate to expose the wiring pads; and removing the protection material layer.
摘要翻译： 本公开提供了一种制造微电子器件的方法。 该方法包括在第一基板上形成接合焊盘; 在所述第一基板上形成布线焊盘; 在所述第一基板上，在所述布线焊盘的侧壁和顶表面上以及所述焊盘的侧壁上形成保护材料层，使得所述焊盘的顶表面至少部分地露出; 通过接合焊盘将第一衬底接合到第二衬底; 打开第二基板以露出布线垫; 并去除保护材料层。
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公开(公告)号：US20140020818A1
公开(公告)日：2014-01-23
申请号：US13554751
申请日：2012-07-20
申请人： Xin-Hua Huang , Ping-Yin Liu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao , Chia-Shiung Tsai
发明人： Xin-Hua Huang , Ping-Yin Liu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao , Chia-Shiung Tsai
CPC分类号： H01L21/67092 , Y10T156/11 , Y10T156/1132 , Y10T156/1153 , Y10T156/1189 , Y10T156/1911 , Y10T156/1944 , Y10T156/1972
摘要： Systems and methods of separating bonded wafers are disclosed. In one embodiment, a system for separating bonded wafers includes a support for the bonded wafers and means for applying a sheer force to the bonded wafers. The system also includes means for applying a vacuum to the bonded wafers.
摘要翻译： 公开了分离键合晶片的系统和方法。 在一个实施例中，用于分离接合的晶片的系统包括用于接合的晶片的支撑件和用于向结合的晶片施加纯粹的力的装置。 该系统还包括用于向接合晶片施加真空的装置。
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公开(公告)号：US08598687B2
公开(公告)日：2013-12-03
申请号：US13481574
申请日：2012-05-25
申请人： Yuan-Chih Hsieh , Richard Chu , Ming-Tung Wu , Martin Liu , Lan-Lin Chao , Chia-Shiung Tsai
发明人： Yuan-Chih Hsieh , Richard Chu , Ming-Tung Wu , Martin Liu , Lan-Lin Chao , Chia-Shiung Tsai
IPC分类号： H01L29/40
CPC分类号： H01L23/5384 , H01L21/76802 , H01L21/76831 , H01L21/7684 , H01L21/7685 , H01L21/76877 , H01L21/76898 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L2225/06541 , H01L2225/06548 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a via structure includes a via having via sidewall surfaces defined by a semiconductor substrate. The via sidewall surfaces have a first portion and a second portion. A conductive layer is disposed in the via on the first portion of the via sidewall surfaces, and a dielectric layer is disposed on the second portion of the via sidewall surfaces. The dielectric layer is disposed between the second portion of the via sidewall surfaces and the conductive layer. In an example, the dielectric layer is an oxide layer.
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公开(公告)号：US20130037891A1
公开(公告)日：2013-02-14
申请号：US13206014
申请日：2011-08-09
申请人： Hsin-Ting Huang , Jung-Huei Peng , Shang-Ying Tsai , Yao-Te Huang , Ming-Tung Wu , Ping-Yin Liu , Xin-Hua Huang , Yuan-Chih Hsieh
发明人： Hsin-Ting Huang , Jung-Huei Peng , Shang-Ying Tsai , Yao-Te Huang , Ming-Tung Wu , Ping-Yin Liu , Xin-Hua Huang , Yuan-Chih Hsieh
CPC分类号： B81C1/00777 , B81B2207/07 , B81C1/00896 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/03001 , H01L2224/03009 , H01L2224/04042 , H01L2224/05571 , H01L2224/48091 , H01L2224/48463 , H01L2224/83805 , H01L2224/85375 , H01L2924/00014 , H01L2924/01322 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/1461 , H01L2924/16235 , H01L2924/00 , H01L2224/45099 , H01L2224/05552
摘要： The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate.
摘要翻译： 本公开提供了一种方法，包括提供第一基板; 以及在所述第一基板的第一表面上形成微机电系统（MEMS）装置。 在第一基板的第一表面上的至少一个结合部位上形成接合焊盘。 接合部位从第一表面凹陷。 因此，接合焊盘的顶表面可以位于衬底的顶表面的平面之下。 还描述了具有凹入的连接元件（例如，接合焊盘）的器件。 在另外的实施例中，在衬底切割期间，在凹入的连接元件上形成保护层。
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