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公开(公告)号：US20120149152A1
公开(公告)日：2012-06-14
申请号：US12966756
申请日：2010-12-13
申请人： Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Hung-Hua Lin , Ming-Tung Wu , Ping-Yin Liu , Yao-Te Huang , Yuan-Chih Hsieh
发明人： Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Hung-Hua Lin , Ming-Tung Wu , Ping-Yin Liu , Yao-Te Huang , Yuan-Chih Hsieh
IPC分类号： H01L21/50
CPC分类号： B81C1/00333 , B81B2207/07 , B81C1/00825 , B81C2201/053 , B81C2203/0109 , H01L2924/16235
摘要： The present disclosure provide a method of manufacturing a microelectronic device. The method includes forming a bonding pad on a first substrate; forming wiring pads on the first substrate; forming a protection material layer on the first substrate, on sidewalls and top surfaces of the wiring pads, and on sidewalls of the bonding pad, such that a top surface of the bonding pad is at least partially exposed; bonding the first substrate to a second substrate through the bonding pad; opening the second substrate to expose the wiring pads; and removing the protection material layer.
摘要翻译： 本公开提供了一种制造微电子器件的方法。 该方法包括在第一基板上形成接合焊盘; 在所述第一基板上形成布线焊盘; 在所述第一基板上，在所述布线焊盘的侧壁和顶表面上以及所述焊盘的侧壁上形成保护材料层，使得所述焊盘的顶表面至少部分地露出; 通过接合焊盘将第一衬底接合到第二衬底; 打开第二基板以露出布线垫; 并去除保护材料层。
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公开(公告)号：US08735260B2
公开(公告)日：2014-05-27
申请号：US12966756
申请日：2010-12-13
申请人： Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Hung-Hua Lin , Ming-Tung Wu , Ping-Yin Liu , Yao-Te Huang , Yuan-Chih Hsieh
发明人： Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Hung-Hua Lin , Ming-Tung Wu , Ping-Yin Liu , Yao-Te Huang , Yuan-Chih Hsieh
CPC分类号： B81C1/00333 , B81B2207/07 , B81C1/00825 , B81C2201/053 , B81C2203/0109 , H01L2924/16235
摘要： The present disclosure provide a method of manufacturing a microelectronic device. The method includes forming a bonding pad on a first substrate; forming wiring pads on the first substrate; forming a protection material layer on the first substrate, on sidewalls and top surfaces of the wiring pads, and on sidewalls of the bonding pad, such that a top surface of the bonding pad is at least partially exposed; bonding the first substrate to a second substrate through the bonding pad; opening the second substrate to expose the wiring pads; and removing the protection material layer.
摘要翻译： 本公开提供了一种制造微电子器件的方法。 该方法包括在第一基板上形成接合焊盘; 在所述第一基板上形成布线焊盘; 在所述第一基板上，在所述布线焊盘的侧壁和顶表面上以及所述焊盘的侧壁上形成保护材料层，使得所述焊盘的顶表面至少部分地露出; 通过接合焊盘将第一衬底接合到第二衬底; 打开第二基板以露出布线垫; 并去除保护材料层。
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3.发明授权公开(公告)号：US08580594B2
公开(公告)日：2013-11-12
申请号：US13206014
申请日：2011-08-09
申请人： Hsin-Ting Huang , Jung-Huei Peng , Shang-Ying Tsai , Yao-Te Huang , Ming-Tung Wu , Ping-Yin Liu , Xin-Hua Huang , Yuan-Chih Hsieh
发明人： Hsin-Ting Huang , Jung-Huei Peng , Shang-Ying Tsai , Yao-Te Huang , Ming-Tung Wu , Ping-Yin Liu , Xin-Hua Huang , Yuan-Chih Hsieh
IPC分类号： H01L21/02
CPC分类号： B81C1/00777 , B81B2207/07 , B81C1/00896 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/03001 , H01L2224/03009 , H01L2224/04042 , H01L2224/05571 , H01L2224/48091 , H01L2224/48463 , H01L2224/83805 , H01L2224/85375 , H01L2924/00014 , H01L2924/01322 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/1461 , H01L2924/16235 , H01L2924/00 , H01L2224/45099 , H01L2224/05552
摘要： The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate.
摘要翻译： 本公开提供了一种方法，包括提供第一基板; 以及在所述第一基板的第一表面上形成微机电系统（MEMS）装置。 在第一基板的第一表面上的至少一个结合部位上形成接合焊盘。 接合部位从第一表面凹陷。 因此，接合焊盘的顶表面可以位于衬底的顶表面的平面之下。 还描述了具有凹入的连接元件（例如，接合焊盘）的器件。 在另外的实施例中，在衬底切割期间，在凹入的连接元件上形成保护层。
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公开(公告)号：US20130037891A1
公开(公告)日：2013-02-14
申请号：US13206014
申请日：2011-08-09
申请人： Hsin-Ting Huang , Jung-Huei Peng , Shang-Ying Tsai , Yao-Te Huang , Ming-Tung Wu , Ping-Yin Liu , Xin-Hua Huang , Yuan-Chih Hsieh
发明人： Hsin-Ting Huang , Jung-Huei Peng , Shang-Ying Tsai , Yao-Te Huang , Ming-Tung Wu , Ping-Yin Liu , Xin-Hua Huang , Yuan-Chih Hsieh
CPC分类号： B81C1/00777 , B81B2207/07 , B81C1/00896 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/03001 , H01L2224/03009 , H01L2224/04042 , H01L2224/05571 , H01L2224/48091 , H01L2224/48463 , H01L2224/83805 , H01L2224/85375 , H01L2924/00014 , H01L2924/01322 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/1461 , H01L2924/16235 , H01L2924/00 , H01L2224/45099 , H01L2224/05552
摘要： The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate.
摘要翻译： 本公开提供了一种方法，包括提供第一基板; 以及在所述第一基板的第一表面上形成微机电系统（MEMS）装置。 在第一基板的第一表面上的至少一个结合部位上形成接合焊盘。 接合部位从第一表面凹陷。 因此，接合焊盘的顶表面可以位于衬底的顶表面的平面之下。 还描述了具有凹入的连接元件（例如，接合焊盘）的器件。 在另外的实施例中，在衬底切割期间，在凹入的连接元件上形成保护层。
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5.发明授权公开(公告)号：US08377798B2
公开(公告)日：2013-02-19
申请号：US12943281
申请日：2010-11-10
申请人： Jung-Huei Peng , Hsin-Ting Huang , Yao-Te Huang , Shang-Ying Tsai , Ping-Yin Liu
发明人： Jung-Huei Peng , Hsin-Ting Huang , Yao-Te Huang , Shang-Ying Tsai , Ping-Yin Liu
IPC分类号： H01L21/30 , H01L21/46 , H01L21/311
CPC分类号： H01L25/0657 , B81C1/00269 , B81C2203/019 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L25/50 , H01L2224/2745 , H01L2224/27452 , H01L2224/2746 , H01L2224/2782 , H01L2224/2783 , H01L2224/27831 , H01L2224/2784 , H01L2224/27848 , H01L2224/29082 , H01L2224/29111 , H01L2224/29116 , H01L2224/29117 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29611 , H01L2224/29617 , H01L2224/29644 , H01L2224/29647 , H01L2224/29655 , H01L2224/32058 , H01L2224/32059 , H01L2224/3207 , H01L2224/32148 , H01L2224/32505 , H01L2224/83011 , H01L2224/83012 , H01L2224/83014 , H01L2224/83121 , H01L2224/83193 , H01L2224/83203 , H01L2224/94 , H01L2924/01322 , H01L2924/10157 , H01L2924/1461 , H01L2924/00014 , H01L2924/01032 , H01L2924/01014 , H01L2924/01013 , H01L2224/83
摘要： A method for wafer to wafer bonding in semiconductor packaging provides for roughening the bonding surfaces in one embodiment. Also provided is a method for passivating the bonding surfaces with a lower melting point material that becomes forced away from the bonding interface during bonding. Also provided is a method for forming an eutectic at the bonding interface to reduce the impact of any native oxide formation at the bonding interface.
摘要翻译： 在一个实施例中，用于半导体封装中的晶片到晶片结合的方法提供了使结合表面粗糙化的方法。 还提供了一种用于在接合期间被迫离开接合界面的较低熔点材料钝化接合表面的方法。 还提供了在键合界面处形成共晶的方法，以减少接合界面处的任何自然氧化物形成的影响。
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公开(公告)号：US08853801B2
公开(公告)日：2014-10-07
申请号：US13450728
申请日：2012-04-19
申请人： Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Yao-Te Huang , Lung Yuan Pan , Hung-Hua Lin
发明人： Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Yao-Te Huang , Lung Yuan Pan , Hung-Hua Lin
IPC分类号： H01L29/788
CPC分类号： B81B7/0006 , B81B2203/0307 , B81C1/00039 , B81C1/00134 , B81C1/00166 , B81C1/00341 , G01P15/0802 , G01P15/125 , G01P2015/0871 , H01G5/18 , H01L28/60
摘要： A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.
摘要翻译： 器件包括衬底，衬底上的布线导线，路由导线上的电介质层以及介电层上的蚀刻停止层。 微机电系统（MEMS）器件具有超过蚀刻停止层的部分。 接触插塞穿过蚀刻停止层和电介质层。 接触插头将MEMS器件的部分连接到布线导线。 保护环设置在蚀刻停止层上方和MEMS器件下方，其中护送环环绕接触插塞。
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公开(公告)号：US20130277770A1
公开(公告)日：2013-10-24
申请号：US13450728
申请日：2012-04-19
申请人： Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Yao-Te Huang , Lung Yuan Pan , Hung-Hua Lin
发明人： Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Yao-Te Huang , Lung Yuan Pan , Hung-Hua Lin
CPC分类号： B81B7/0006 , B81B2203/0307 , B81C1/00039 , B81C1/00134 , B81C1/00166 , B81C1/00341 , G01P15/0802 , G01P15/125 , G01P2015/0871 , H01G5/18 , H01L28/60
摘要： A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.
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公开(公告)号：US20140042625A1
公开(公告)日：2014-02-13
申请号：US13571260
申请日：2012-08-09
申请人： Hsin-Ting Huang , Jung-Huei Peng , Shang-Ying Tsai , Li-Min Hung , Yao-Te Huang , Yi-Chuan Teng , Chin-Yi Cho
发明人： Hsin-Ting Huang , Jung-Huei Peng , Shang-Ying Tsai , Li-Min Hung , Yao-Te Huang , Yi-Chuan Teng , Chin-Yi Cho
IPC分类号： H01L23/48 , H01L21/762
CPC分类号： H01L24/32 , H01L23/48 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/2745 , H01L2224/27452 , H01L2224/27622 , H01L2224/29007 , H01L2224/29109 , H01L2224/29111 , H01L2224/29117 , H01L2224/29124 , H01L2224/29144 , H01L2224/32013 , H01L2224/32014 , H01L2224/32145 , H01L2224/83193 , H01L2224/83805 , H01L2224/83951 , H01L2924/01322 , H01L2924/1461 , H01L2924/15788 , H01L2924/01032 , H01L2924/01029 , H01L2924/00
摘要： A structure comprises a first semiconductor substrate, a first bonding layer deposited on a bonding side the first semiconductor substrate, a second semiconductor substrate stacked on top of the first semiconductor substrate and a second bonding layer deposited on a bonding side of the second semiconductor substrate, wherein the first bonding layer is of a horizontal length greater than a horizontal length of the second semiconductor substrate, and wherein there is a gap between an edge of the second bonding layer and a corresponding edge of the second semiconductor substrate.
摘要翻译： 一种结构包括第一半导体衬底，沉积在第一半导体衬底的接合侧上的第一接合层，堆叠在第一半导体衬底的顶部上的第二半导体衬底和沉积在第二半导体衬底的接合侧上的第二接合层， 其中所述第一接合层的水平长度大于所述第二半导体衬底的水平长度，并且其中在所述第二接合层的边缘和所述第二半导体衬底的对应边缘之间存在间隙。
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公开(公告)号：US08686571B2
公开(公告)日：2014-04-01
申请号：US13571260
申请日：2012-08-09
申请人： Hsin-Ting Huang , Jung-Huei Peng , Shang-Ying Tsai , Li-Min Hung , Yao-Te Huang , Yi-Chuan Teng , Chin-Yi Cho
发明人： Hsin-Ting Huang , Jung-Huei Peng , Shang-Ying Tsai , Li-Min Hung , Yao-Te Huang , Yi-Chuan Teng , Chin-Yi Cho
CPC分类号： H01L24/32 , H01L23/48 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/2745 , H01L2224/27452 , H01L2224/27622 , H01L2224/29007 , H01L2224/29109 , H01L2224/29111 , H01L2224/29117 , H01L2224/29124 , H01L2224/29144 , H01L2224/32013 , H01L2224/32014 , H01L2224/32145 , H01L2224/83193 , H01L2224/83805 , H01L2224/83951 , H01L2924/01322 , H01L2924/1461 , H01L2924/15788 , H01L2924/01032 , H01L2924/01029 , H01L2924/00
摘要： A structure comprises a first semiconductor substrate, a first bonding layer deposited on a bonding side the first semiconductor substrate, a second semiconductor substrate stacked on top of the first semiconductor substrate and a second bonding layer deposited on a bonding side of the second semiconductor substrate, wherein the first bonding layer is of a horizontal length greater than a horizontal length of the second semiconductor substrate, and wherein there is a gap between an edge of the second bonding layer and a corresponding edge of the second semiconductor substrate.
摘要翻译： 一种结构包括第一半导体衬底，沉积在第一半导体衬底的接合侧上的第一接合层，堆叠在第一半导体衬底的顶部上的第二半导体衬底和沉积在第二半导体衬底的接合侧上的第二接合层， 其中所述第一接合层的水平长度大于所述第二半导体衬底的水平长度，并且其中在所述第二接合层的边缘和所述第二半导体衬底的对应边缘之间存在间隙。
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公开(公告)号：US08723343B2
公开(公告)日：2014-05-13
申请号：US13047502
申请日：2011-03-14
申请人： Tien-Kan Chung , Wen-Chuan Tai , Yao-Te Huang , Hsin-Ting Huang , Shang-Ying Tsai , Chang-Yi Yang , Chia-Ming Hung
发明人： Tien-Kan Chung , Wen-Chuan Tai , Yao-Te Huang , Hsin-Ting Huang , Shang-Ying Tsai , Chang-Yi Yang , Chia-Ming Hung
IPC分类号： H02P9/04
CPC分类号： H02K35/04 , B81B7/02 , G01P15/11 , H01F5/003 , H02K15/00 , H02M7/04 , H02N1/006 , Y10T29/49009
摘要： In some embodiments of the present disclosure, a sensor comprises a substrate, a sensor element and an energy-harvesting device. The sensor element comprises a plate, and the plate is moveable with respect to the substrate. The energy-harvesting device is formed on the plate of the sensor element.
摘要翻译： 在本公开的一些实施例中，传感器包括基板，传感器元件和能量收集装置。 传感器元件包括板，并且板可相对于基板移动。 能量收集装置形成在传感器元件的板上。
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