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公开(公告)号:US20240003851A1
公开(公告)日:2024-01-04
申请号:US18470608
申请日:2023-09-20
Applicant: DENSO CORPORATION
Inventor: Ryoichi KAIZU , Yuki INABA , Tomomi OKUMURA , Toshifumi HOSONO
CPC classification number: G01N29/0672 , B06B1/0215 , G01N29/343 , G01N2291/0231
Abstract: A power module comprises an element and an insulated circuit board having a laminated portion. The laminated portion includes a first metal layer, a bonding layer interposed between an element and the first metal layer, a second metal layer, and a resin layer interposed between the first metal layer and the second metal layer. The insulated circuit board has a pair of laminated portions provided so as to sandwich the element. The laminated portions are configured so that ultrasonic pulses emitted from an outside of the second metal layer toward the element have the following relationship of detection time periods. A time period in which the ultrasonic pulse travels two roundtrips in the second metal layer is longer than a time period in which the ultrasonic pulse travels one roundtrip in a range from the second metal layer to the element.
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公开(公告)号:US20170317006A1
公开(公告)日:2017-11-02
申请号:US15522972
申请日:2015-11-20
Applicant: DENSO CORPORATION
Inventor: Tomomi OKUMURA
CPC classification number: H01L23/3675 , H01L23/051 , H01L23/3107 , H01L23/3114 , H01L23/4334 , H01L23/49524 , H01L23/49568 , H01L23/50 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/73 , H01L25/072 , H01L25/18 , H01L2224/29101 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48175 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/0002 , H01L2924/10253 , H01L2924/1203 , H01L2924/13055 , H01L2924/14252 , H01L2924/181 , H02P27/06 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599 , H01L2924/014
Abstract: A semiconductor device of a double-side cooling structure having a bus bar electrically connected, and coolers independently arranged on both sides of the semiconductor device for cooling is provided. The semiconductor device includes: a semiconductor chip including an element, and has a first main surface and a second main surface; a sealing resin body having a first surface and a second surface and also having a side surface; a first heatsink arranged facing the first main surface and electrically connected to the first main electrode; and a second heatsink arranged facing the second main surface and electrically connected to the second main electrode. The first heatsink is exposed only to the first surface. The second heatsink is exposed only to the second surface. An exposed surface of a heatsink to be electrically connected to the bus bar has a heat dissipation region, and an electrical connection region.
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公开(公告)号:US20160225690A1
公开(公告)日:2016-08-04
申请号:US14916136
申请日:2014-08-29
Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION
Inventor: Takuya KADOGUCHI , Takahiro HIRANO , Takanori KAWASHIMA , Tomomi OKUMURA , Masayoshi NISHIHATA
IPC: H01L23/367 , H01L29/739 , H01L29/861 , H01L25/07
CPC classification number: H01L23/49568 , H01L23/051 , H01L23/3107 , H01L23/36 , H01L23/3672 , H01L23/49513 , H01L23/49524 , H01L23/49537 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L25/072 , H01L29/7397 , H01L29/861 , H01L2224/2612 , H01L2224/26175 , H01L2224/29111 , H01L2224/32014 , H01L2224/32057 , H01L2224/32245 , H01L2224/33 , H01L2224/33181 , H01L2224/40137 , H01L2224/45124 , H01L2224/45147 , H01L2224/48247 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/83007 , H01L2224/83101 , H01L2224/83203 , H01L2224/83385 , H01L2224/83439 , H01L2224/83444 , H01L2224/83815 , H01L2224/92242 , H01L2224/92247 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2224/83 , H01L2224/85 , H01L2924/00
Abstract: A semiconductor device includes: opposed first and second metal plates; a plurality of semiconductor elements each interposed between the first metal plate and the second metal plate; a metal block interposed between the first metal plate and each of the semiconductor elements; a solder member interposed between the first metal plate and the metal block and connecting the first metal plate to the metal block; and a resin molding sealing the semiconductor elements and the metal block. A face of the first metal plate, which is on an opposite side of a face of the first metal plate to which the metal block is connected via the solder member, is exposed from the resin molding. The first metal plate has a groove formed along an outer periphery of a region in which the solder member is provided, the groove collectively surrounding the solder member.
Abstract translation: 一种半导体器件包括:相对的第一和第二金属板; 多个半导体元件,各自插入在所述第一金属板和所述第二金属板之间; 介于所述第一金属板和所述半导体元件之间的金属块; 插入在第一金属板和金属块之间并将第一金属板连接到金属块的焊料构件; 以及密封半导体元件和金属块的树脂模制件。 第一金属板的与第一金属板的通过焊料部件连接的第一金属板的面相反一侧的面从树脂成形体露出。 第一金属板具有沿着设置有焊料构件的区域的外周形成的槽,槽围绕焊料构件。
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公开(公告)号:US20240258264A1
公开(公告)日:2024-08-01
申请号:US18597486
申请日:2024-03-06
Applicant: DENSO CORPORATION
Inventor: Takanori KAWASHIMA , Shinji HIRAMITSU , Tomomi OKUMURA
IPC: H01L23/00 , H01L23/498 , H01L25/00 , H01L25/07
CPC classification number: H01L24/48 , H01L23/49811 , H01L23/49844 , H01L24/73 , H01L25/072 , H01L25/50 , H01L24/32 , H01L2224/32225 , H01L2224/48175 , H01L2224/73265 , H01L2924/1815
Abstract: A semiconductor device includes a semiconductor element, a first wiring member electrically connected to a first main electrode on a first surface of the semiconductor element, a second wiring member electrically connected to a second main electrode on a second surface of the semiconductor element, a signal terminal connected to a signal pad on the second surface through a bonding wire. The second wiring member includes an insulating base material, a front surface metal body on a front surface of the insulating base material adjacent to the semiconductor element, and a back surface metal body on a back surface. An end portion of the front surface metal body is located between an end portion of a bonding target to which the front surface metal body is bonded and an end portion of the semiconductor element in an arrangement direction of the semiconductor element and the signal terminal.
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公开(公告)号:US20240087978A1
公开(公告)日:2024-03-14
申请号:US18504487
申请日:2023-11-08
Applicant: DENSO CORPORATION
Inventor: Takanori KAWASHIMA , Tomomi OKUMURA , Shunsuke ARAI , Naruhiro INOUE
IPC: H01L23/373 , H01L23/00 , H01L23/31 , H01L25/07
CPC classification number: H01L23/3735 , H01L23/3142 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/072 , H02P27/06
Abstract: A semiconductor device includes semiconductor elements arranged in a first direction, an arm connection portion disposed between the semiconductor elements in the first direction, first and second power supply terminals disposed on the same side in the first direction, first and second substrates interposing the semiconductor elements therebetween, and a sealing body. The second substrate includes an insulating base member, a front-face metal body and a back-face metal body. The front-face metal body includes a second power supply wiring and a second relay wiring. The second power supply wiring includes a base portion on which the second element is arranged, and a pair of extending portions extending from the base portion in the first direction. The second relay wiring is disposed between the extending portions in a second direction, so that the second relay wiring and the base portion satisfy a relationship of L1
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公开(公告)号:US20220223544A1
公开(公告)日:2022-07-14
申请号:US17708525
申请日:2022-03-30
Applicant: DENSO CORPORATION
Inventor: Daisuke FUKUOKA , Tomomi OKUMURA , Yuuji OOTANI , Wataru KOBAYASHI , Takumi NOMURA , Tomoaki MITSUNAGA , Takahiro HIRANO , Takamichi SAKAI , Kengo OKA
IPC: H01L23/00 , H01L23/31 , H01L23/495 , H01L21/48
Abstract: In a semiconductor device, a semiconductor element has a front electrode and a back electrode. The back electrode is connected to a wiring member through a bonding member. Wire pieces are disposed in the bonding member, and bonded to a bonding surface of the wiring member to protrude toward the semiconductor element. The bonding member has, in a plan view, a central region that overlaps with a central portion of the semiconductor element including an element center, and an outer peripheral region that includes a portion overlapping with an outer peripheral portion of the semiconductor element surrounding the central portion and surrounds the central region. At least four wire pieces are disposed in the outer peripheral region at positions corresponding to at least four respective corners of the semiconductor element. At least one wire piece is disposed to extend toward the element center in the plan view.
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公开(公告)号:US20190355656A1
公开(公告)日:2019-11-21
申请号:US16527543
申请日:2019-07-31
Applicant: DENSO CORPORATION
Inventor: Eiji HAYASHI , Ryoji UWATAKI , Tomomi OKUMURA
IPC: H01L23/498 , H01L23/12 , H01L23/28 , H01L23/40 , H01L23/495 , H01L21/56 , H01L23/00
Abstract: The present disclosure describes a semiconductor device including: a semiconductor chip having an electrode; a conductive member including a metal base and having a mounting portion and a peripheral portion surrounding the mounting portion; a solder that is provided between the electrode and the mounting portion; and a sealing resin body that integrally seals the semiconductor chip, at least the face opposed to the electrode in the conductive member, and the solder.
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公开(公告)号:US20190139874A1
公开(公告)日:2019-05-09
申请号:US16239796
申请日:2019-01-04
Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION
Inventor: Takuya KADOGUCHI , Takahiro HIRANO , Arata HARADA , Tomomi OKUMURA , Keita FUKUTANI , Masayoshi NISHIHATA
IPC: H01L23/495 , H01L23/00 , H01L23/31 , H01L23/433 , H02M7/00 , H01L29/861 , H01L29/739
Abstract: A semiconductor device includes a first switching element; a second switching element; a first metal member; a second metal member; a first terminal that has a potential on a high potential side; a second terminal that has a potential on a low potential side; a third terminal that has a midpoint potential; and a resin part. A first potential part has potential equal to potential of the first terminal. A second potential part has potential equal to potential of the second terminal. A third potential part has potential equal to potential of the third terminal. A first creepage distance between the first potential part and the second potential part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part and a third creepage distance between the second potential part and the third potential part.
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