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    Apparatus for chemical vapor deposition of aluminum oxide
    11.
    发明授权
    Apparatus for chemical vapor deposition of aluminum oxide 失效
    氧化铝化学气相沉积装置

    公开(公告)号：US5614247A

    公开(公告)日：1997-03-25

    申请号：US316303

    申请日：1994-09-30

    申请人： Steven G. Barbee ,  Richard A. Conti ,  Alexander Kostenko ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W. Wong ,  Steven P. Zuhoski

    发明人： Steven G. Barbee ,  Richard A. Conti ,  Alexander Kostenko ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W. Wong ,  Steven P. Zuhoski

    IPC分类号： C23C16/40 ,  C23C16/46 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31

    CPC分类号： C23C16/403 ,  C23C16/46 ,  C23C16/52

    摘要： An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor waters as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate. The apparatus incorporates a heated source material, heated delivery lines, heated inert gas purge lines, a pressure differential mass flow controller, a control system with related valving, and a vacuum process chamber with walls that are temperature controlled as a complete source delivery system to accurately and repeatably provide source vapor for LPCVD deposition of aluminum oxide onto silicon substrates.

    摘要翻译： 化学气相沉积（CVD）系统中的装置在沉积过程中监测实际的晶片/衬底温度。 该设备使得可以生产具有实时晶片/衬底控制的高品质氧化铝膜。 使用红外（IR）温度监测装置将实际晶片温度控制到过程温度设定值。 这消除了所有的大气温度探测。 测试运行和监控水的需求以及执行操作所需的资源被消除，运行成本降低。 可以在硅衬底上沉积高质量均匀的氧化铝膜，而不需要额外的光刻步骤来模拟存在于溅射（PVD）型应用中的共形性。 结果是所需的工艺步骤减少，随后预期节省设备，循环时间，化学品，减少处理和提高基材上装置的产量。 该装置包括加热的源材料，加热的输送管线，加热的惰性气体吹扫管线，压差质量流量控制器，具有相关阀门的控制系统和具有作为完整源输送系统温度控制的壁的真空处理室 准确并重复地提供源蒸气，用于LPCVD在硅衬底上沉积氧化铝。

    Structure and method to control oxidation in high-k gate structures
    13.
    发明授权
    Structure and method to control oxidation in high-k gate structures 有权
    控制高k栅极结构氧化的结构和方法

    公开(公告)号：US07955926B2

    公开(公告)日：2011-06-07

    申请号：US12055682

    申请日：2008-03-26

    申请人： Wesley C. Natzle ,  Renee T. Mo ,  Rashmi Jha ,  Kathryn T. Schonenberg ,  Richard A. Conti

    发明人： Wesley C. Natzle ,  Renee T. Mo ,  Rashmi Jha ,  Kathryn T. Schonenberg ,  Richard A. Conti

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76224 ,  H01L21/28123 ,  H01L29/517

    摘要： In one embodiment, the present invention provides a method of fabricating a semiconducting device that includes providing a substrate including at least one semiconducting region and at least one oxygen source region; forming an oxygen barrier material atop portions of an upper surface of the at least one oxygen region; forming a high-k gate dielectric on the substrate including the at least one semiconducting region, wherein oxygen barrier material separates the high-k gate dielectric from the at least one oxygen source material; and forming a gate conductor atop the high-k gate dielectric.

    摘要翻译： 在一个实施例中，本发明提供一种制造半导体器件的方法，其包括提供包括至少一个半导体区域和至少一个氧源区域的衬底; 在所述至少一个氧区的上表面的部分顶部形成氧阻隔材料; 在包括所述至少一个半导体区域的衬底上形成高k栅极电介质，其中氧阻挡材料将所述高k栅极电介质与所述至少一个氧源材料分离; 并在高k栅极电介质的顶部形成栅极导体。

    Mask forming and implanting methods using implant stopping layer and mask so formed
    14.
    发明授权
    Mask forming and implanting methods using implant stopping layer and mask so formed 失效
    使用植入物停止层和掩​​模形成的掩模形成和植入方法

    公开(公告)号：US07651947B2

    公开(公告)日：2010-01-26

    申请号：US11420321

    申请日：2006-05-25

    申请人： Katherina Babich ,  Todd C. Bailey ,  Richard A. Conti ,  Ryan P. Deschner

    发明人： Katherina Babich ,  Todd C. Bailey ,  Richard A. Conti ,  Ryan P. Deschner

    IPC分类号： H01L21/302

    CPC分类号： H01L21/266 ,  H01L21/26513 ,  Y10T428/24992

    摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.

    摘要翻译： 形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。 在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。 注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。 方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

    Modified gate processing for optimized definition of array and logic devices on same chip
    18.
    发明授权
    Modified gate processing for optimized definition of array and logic devices on same chip 失效
    改进的门处理，用于在同一芯片上优化阵列和逻辑器件的定义

    公开(公告)号：US06403423B1

    公开(公告)日：2002-06-11

    申请号：US09713272

    申请日：2000-11-15

    申请人： Mary E. Weybright ,  Gary Bronner ,  Richard A. Conti ,  Ramachandra Divakaruni ,  Jeffrey Peter Gambino ,  Peter Hoh ,  Uwe Schroeder

    发明人： Mary E. Weybright ,  Gary Bronner ,  Richard A. Conti ,  Ramachandra Divakaruni ,  Jeffrey Peter Gambino ,  Peter Hoh ,  Uwe Schroeder

    IPC分类号： H01L21336

    CPC分类号： H01L27/10894 ,  H01L21/76897 ,  H01L21/823456 ,  H01L27/1052 ,  H01L27/10873

    摘要： Two different gate conductor dielectric caps are used in the array and support device regions so that the bitline contact can be fabricated in the array region, but a thinner hard mask can be used for better linewidth control in the support device region. The thinner dielectric cap is made into dielectric spacers in the array device regions during support mask etching. These dielectric spacers allow for the array gate conductor resist line to be made-smaller than the final gate conductor linewidth. This widens the array gate conductor processing window. The second dielectric cap layer improves linewidth control for the support devices and the array devices. Two separate gate conductor lithography steps and gate conductor dielectric etches are carried out in the present invention to optimize the gate conductor linewidth control in the array and support device regions. The gate conductors in the array and support devices regions are etched simultaneously to reduce production cost. In additional embodiments of the invention, dual workfunction support device transistors with or without salicide can be fabricated with an array including borderless contacts.

    摘要翻译： 在阵列和支撑器件区域中使用两个不同的栅极导体电介质盖，使得可以在阵列区域中制造位线接触，但是可以使用较薄的硬掩模用于支撑装置区域中的更好的线宽控制。 在支撑掩模蚀刻期间，将较薄的介质盖制成阵列器件区域中的电介质间隔物。 这些电介质间隔物允许阵列栅极导体抗蚀剂线被制成 - 小于最终的栅极导体线宽。 这扩大了阵列栅极导体处理窗口。 第二电介质盖层改善了支撑装置和阵列装置的线宽控制。 在本发明中执行两个单独的栅极导体光刻步骤和栅极导体介电蚀刻，以优化阵列和支撑装置区域中的栅极导体线宽控制。 阵列和支撑装置区域中的栅极导体被同时蚀刻以降低生产成本。 在本发明的另外的实施例中，可以用包括无边界触点的阵列来制造具有或不具有自对准硅的双功能功能支撑器件晶体管。

    Integrated circuits having reduced stress in metallization
    19.
    发明授权
    Integrated circuits having reduced stress in metallization 失效
    集成电路在金属化中具有降低的应力

    公开(公告)号：US06208008B1

    公开(公告)日：2001-03-27

    申请号：US09260702

    申请日：1999-03-02

    申请人： Kenneth C. Arndt ,  Richard A. Conti ,  David M. Dobuzinsky ,  Laertis Economikos ,  Jeffrey P. Gambino ,  Peter D. Hoh ,  Chandrasekhar Narayan

    发明人： Kenneth C. Arndt ,  Richard A. Conti ,  David M. Dobuzinsky ,  Laertis Economikos ,  Jeffrey P. Gambino ,  Peter D. Hoh ,  Chandrasekhar Narayan

    IPC分类号： H01L2941

    CPC分类号： H01L21/76804 ,  H01L21/32136 ,  H01L21/76835 ,  H01L21/76885

    摘要： The stresses commonly induced in the dielectrics of integrated circuits manufactured using metal patterning methods, such as reactive ion etching (RIE) and damascene techniques, can be reduced by rounding the lower corners associated with the features which are formed as part of the integrated circuit (e.g., the interconnects) before applying the outer (i.e., passivation) layer. In connection with the formation of metal lines patterned by a metal RIE process, such corner rounding can be achieved using a two-step metal etching process including a first step which produces a vertical sidewall and a second step which tapers lower portions of the vertical sidewall or which produces a tapered spacer along the lower portions of the vertical sidewall. This results in a rounded bottom corner which improves the step coverage of the overlying dielectric, in turn eliminating the potential for cracks. For metal lines patterned by damascene, such corner rounding can be achieved using a two-step trench etching process including a first step which produces a vertical sidewall, and a second step which produces a tapered sidewall along lower portions of the vertical sidewall.

    摘要翻译： 通过使与金属图案化方法（例如反应离子蚀刻（RIE）和镶嵌技术）一起制造的集成电路的电介质中通常引起的应力可以通过将与形成为集成电路的一部分的特征相关联的下角 在施加外部（即钝化）层之前，例如，互连）。 关于通过金属RIE工艺形成的金属线的形成，可以使用包括产生垂直侧壁的第一步骤和使垂直侧壁的下部逐渐变细的第二步骤的两步金属蚀刻工艺来实现这种角圆化 或者沿着垂直侧壁的下部产生锥形间隔物。 这导致圆角的底角，其改善了上覆电介质的台阶覆盖，从而消除了裂纹的可能性。 对于由大马士革图案化的金属线，可以使用包括产生垂直侧壁的第一步骤的两步沟槽蚀刻工艺，以及沿着垂直侧壁的下部产生锥形侧壁的第二步骤来实现这种角落圆化。