公开(公告)号：US20070077701A1

公开(公告)日：2007-04-05

申请号：US11239321

申请日：2005-09-30

申请人： David O'Meara ,  YoungJong Lee ,  Cory Wajda

发明人： David O'Meara ,  YoungJong Lee ,  Cory Wajda

IPC分类号： H01L21/8242 ,  H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L21/28194 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31122 ,  H01L29/517 ,  H01L29/78

摘要： A method is provided for reducing the metal content and controlling the metal depth profile of a gate dielectric layer in a gate stack. The method includes providing a substrate in a process chamber, depositing a gate dielectric layer on the substrate, where the gate dielectric layer includes a metal element. The metal element is selectively etched from at least a portion of the gate dielectric layer to form an etched gate dielectric layer with reduced metal content, and a gate electrode layer is formed on the etched gate dielectric layer.

摘要翻译： 提供了一种用于降低金属含量并控制栅叠层中的栅介质层的金属深度分布的方法。 该方法包括在处理室中提供衬底，在衬底上沉积栅极电介质层，其中栅极电介质层包括金属元素。 从栅介质层的至少一部分选择性地蚀刻金属元件，以形成具有降低的金属含量的蚀刻栅极电介质层，并且在蚀刻的栅极介电层上形成栅极电极层。

公开(公告)号：US20050217799A1

公开(公告)日：2005-10-06

申请号：US10813119

申请日：2004-03-31

申请人： David O'Meara ,  Gerrit Leusink ,  Stephen Cabral ,  Anthony Dip ,  Cory Wajda ,  Raymond Joe

发明人： David O'Meara ,  Gerrit Leusink ,  Stephen Cabral ,  Anthony Dip ,  Cory Wajda ,  Raymond Joe

IPC分类号： C23F1/00 ,  H01L21/00

CPC分类号： H01L21/67109 ,  H01J2237/2001

摘要： A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon ‘wire’ or ‘braided’ structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.

摘要翻译： 描述了具有用于单个晶片处理系统的唯一加热器元件的晶片加热组件。 加热单元包括封装在石英鞘中的碳线元件。 加热单元与石英无污染，允许直接接触晶片。 碳线或“编织”结构的机械灵活性允许线圈构造，其允许跨晶片的独立加热器区域控制。 跨晶片的多个独立的加热器区域可以允许温度梯度调节膜生长/沉积均匀性和快速的热调节，其膜均匀性优于常规单晶片系统，并且最小至无晶片翘曲。 低热质量允许快速的热响应，其实现脉冲或数字热处理，其导致逐层成膜以改善薄膜控制。

公开(公告)号：US20050214445A1

公开(公告)日：2005-09-29

申请号：US10811574

申请日：2004-03-29

申请人： Cory Wajda ,  David O'Meara

发明人： Cory Wajda ,  David O'Meara

IPC分类号： B05C11/00 ,  B05D1/00 ,  C23C16/00 ,  C23C16/52 ,  H01C17/065 ,  H01C17/075 ,  H01L21/00

CPC分类号： H01L21/67253 ,  C23C16/52 ,  H01C17/065 ,  H01C17/075

摘要： A method and system for monitoring coating status of a ceramic substrate heater in a process chamber. The method includes heating a ceramic substrate heater to a desired temperature, exposing the ceramic substrate heater to a reactant gas during a process, and monitoring optical emission from the heated ceramic substrate heater to determine coating status of the ceramic substrate heater. Processes that can be monitored include a chamber cleaning process and a chamber conditioning process.

摘要翻译： 一种用于监测处理室中的陶瓷衬底加热器的涂覆状态的方法和系统。 该方法包括将陶瓷衬底加热器加热至所需温度，在工艺过程中将陶瓷衬底加热器暴露于反应气体，以及监测来自加热的陶瓷衬底加热器的光发射以确定陶瓷衬底加热器的涂层状态。 可以监测的过程包括室清洁过程和室调节过程。

公开(公告)号：US20070065593A1

公开(公告)日：2007-03-22

申请号：US11231336

申请日：2005-09-21

申请人： Cory Wajda ,  David O'Meara ,  Masanobu Igeta

发明人： Cory Wajda ,  David O'Meara ,  Masanobu Igeta

IPC分类号： B05D3/00 ,  H05H1/24

CPC分类号： H01L21/02238 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/31654

摘要： A method for preparing an oxide film on a substrate. A surface of a substrate is oxidized to form an oxide film. The surface is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation and plasma induced dissociation of a process gas comprising at least one molecular composition comprising oxygen.

摘要翻译： 一种在基板上制备氧化膜的方法。 将基板的表面氧化形成氧化膜。 该表面暴露于由紫外线（UV）辐射诱导的解离形成的氧自由基和等离子体诱导的包含至少一种包含氧的分子组合物的工艺气体的解离。

公开(公告)号：US20050070104A1

公开(公告)日：2005-03-31

申请号：US10674703

申请日：2003-09-30

申请人： David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

发明人： David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67276 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L21/67253

摘要： A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.

摘要翻译： 一种在过程中监视系统组件的状态的方法和系统。 该方法包括在过程期间将系统组分暴露于反应气体，其中反应气体能够蚀刻系统组分材料以形成侵蚀产物，并且在该过程期间监测侵蚀产物的释放以确定系统部件的状态 。 可以监测的方法包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺。 系统组件可以是消耗系统部件，例如处理管，屏蔽件，环，挡板，注射器，衬底保持器，衬垫，基座，帽盖，电极和加热器 其可以进一步包括保护涂层。 处理系统包括处理室中的系统部件，用于引入反应气体的气体注入系统，用于监视系统部件的状态的室保护系统以及响应于状态来控制处理系统的控制器。

公开(公告)号：US20050068519A1

公开(公告)日：2005-03-31

申请号：US10673513

申请日：2003-09-30

申请人： David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

发明人： David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

IPC分类号： G01N21/55 ,  G01N21/59 ,  G01N21/00

CPC分类号： H01J37/32935 ,  G01N21/55 ,  G01N21/59

摘要： A method and system are provided for monitoring status of a system component in a process chamber of a batch type processing system. The method includes exposing a system component to light from a light source and monitoring interaction of the light with the system component to determine status of the system component. The method can detect light transmission and/or light reflection from a system component during a process that can include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, and a liner, and can further contain a protective coating.

摘要翻译： 提供了一种用于监视批处理系统的处理室中的系统组件的状态的方法和系统。 该方法包括将系统组件暴露于来自光源的光并监测光与系统组件的相互作用以确定系统组件的状态。 该方法可以在可以包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺的过程中检测来自系统部件的光透射和/或光反射。 系统组件可以是消耗系统部件，例如处理管，屏蔽，环，挡板和衬垫，并且还可以包含保护涂层。

公开(公告)号：US07393761B2

公开(公告)日：2008-07-01

申请号：US11045124

申请日：2005-01-31

申请人： Cory Wajda ,  Gert Leusink

发明人： Cory Wajda ,  Gert Leusink

IPC分类号： H01L21/322

CPC分类号： H01L21/02321 ,  H01L21/02123 ,  H01L21/02175 ,  H01L21/0234 ,  H01L21/28079 ,  H01L21/316 ,  H01L29/495

摘要： A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a metal-containing gate electrode layer formed on the high-k dielectric layer, forming low-energy excited dopant species from a process gas in a plasma, and exposing the gate stack to the excited dopant species to incorporate a dopant into the gate stack. The method can be utilized to tune the workfunction of the gate stack.

摘要翻译： 一种在制造半导体器件中处理栅叠层的方法，其特征在于，提供一种基板，该基板含有形成在基板上的电介质层的栅叠层和形成在高k电介质层上的含金属的栅电极层， 来自等离子体中的工艺气体的能量激发的掺杂剂物质，并且将栅极堆叠暴露于激发的掺杂物种类以将掺杂剂掺入到栅极堆叠中。 该方法可用于调整栅极堆叠的功能。

公开(公告)号：US20060226518A1

公开(公告)日：2006-10-12

申请号：US11091755

申请日：2005-03-29

申请人： Igeta Masanobu ,  Cory Wajda ,  Gert Leusink

发明人： Igeta Masanobu ,  Cory Wajda ,  Gert Leusink

IPC分类号： H01L23/58 ,  C23C16/50 ,  H01L21/4757

CPC分类号： H01L21/76801 ,  C23C16/345 ,  C23C16/56 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829

摘要： A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to electromagnetic (EM) radiation, such as EM radiation having a wavelength component less than about 500 nm. The EM source can include a multi-frequency source of radiation. Additionally, the source of radiation is collimated in order to selectively treat regions of a non-planar film.

摘要翻译： 描述了一种用于增加在诸如氮化硅膜之类的衬底上形成的薄膜中的拉伸应力的方法和系统。 薄膜可以是平面薄膜，或非平面薄膜，例如在NMOS栅极上形成的氮化物薄膜。 该薄膜暴露于电磁（EM）辐射，例如波长分量小于约500nm的EM辐射。 EM源可以包括多频辐射源。 另外，为了选择性地处理非平面膜的区域，准直辐射源。

公开(公告)号：US06500761B1

公开(公告)日：2002-12-31

申请号：US10000548

申请日：2001-10-24

申请人： Cory Wajda ,  Joseph T. Hillman

发明人： Cory Wajda ,  Joseph T. Hillman

IPC分类号： H01L2144

CPC分类号： C23C16/45523 ,  C23C16/08 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/76862 ,  H01L23/53238 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A method for forming modulated tantalum/tantalum nitride diffusion barrier stacks on semiconductor device substrates used in interconnect structures. Alternating layers of tantalum and tantalum nitride are deposited onto the semiconductor device substrate by chemical vapor deposition from a tantalum pentafluoride precursor vapor, with intermittent ammonia plasma treatment of the tantalum and tantalum nitride such that each tantalum layer and each tantalum nitride layer are treated at least once to thereby reduce the evolution of HF gas, thereby improving the adhesion and durability of the film stacks during subsequent elevated temperature processing.

摘要翻译： 用于在互连结构中使用的半导体器件衬底上形成调制的钽/氮化钽扩散阻挡层的方法。 钽和氮化钽的交替层通过来自五氟化钽前驱体蒸气的化学气相沉积沉积到半导体器件衬底上，并对钽和氮化钽进行间歇氨等离子体处理，使得每个钽层和每个氮化钽层至少被处理 一次，从而减少HF气体的演变，从而提高膜叠层在随后的高温处理过程中的粘合性和耐久性。

公开(公告)号：US08460945B2

公开(公告)日：2013-06-11

申请号：US10673513

申请日：2003-09-30

申请人： David L. O'Meara ,  Daniel Craig Burdett ,  Stephen H. Cabral ,  Gert Leusink ,  John William Kostenko ,  Cory Wajda

发明人： David L. O'Meara ,  Daniel Craig Burdett ,  Stephen H. Cabral ,  Gert Leusink ,  John William Kostenko ,  Cory Wajda

IPC分类号： H01L21/00

CPC分类号： H01J37/32935 ,  G01N21/55 ,  G01N21/59

摘要： A method and system are provided for monitoring status of a system component in a process chamber of a batch type processing system. The method includes exposing a system component to light from a light source and monitoring interaction of the light with the system component to determine status of the system component. The method can detect light transmission and/or light reflection from a system component during a process that can include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, and a liner, and can further contain a protective coating.

摘要翻译： 提供了一种用于监视批处理系统的处理室中的系统组件的状态的方法和系统。 该方法包括将系统组件暴露于来自光源的光并监测光与系统组件的相互作用以确定系统组件的状态。 该方法可以在可以包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺的过程中检测来自系统部件的光透射和/或光反射。 系统组件可以是消耗系统部件，例如处理管，屏蔽，环，挡板和衬垫，并且还可以包含保护涂层。