公开(公告)号：US20240409430A1

公开(公告)日：2024-12-12

申请号：US18679227

申请日：2024-05-30

Applicant: ENTEGRIS, INC.

Inventor： Juan Valdez ,  Michael Watson ,  Scott L. Battle ,  Matthew W. Calhoun ,  Benjamin R. Garrett ,  Wesley W. Goggans

IPC: C01G27/04 ,  C23C16/08 ,  C23C16/448

Abstract: A precursor vessel comprises a hafnium halide precursor. The hafnium halide precursor comprises less than 1 ppm of at least one impurity. The at least one impurity comprises at least one of a titanium contaminant, a chromium contaminant, an aluminum contaminant, an iron contaminant, or any combination thereof. Related systems and related methods are also provided, including, for example and without limitation, systems for delivery of vapor precursors, methods for purifying a precursor, and the like.

公开(公告)号：US20230115177A1

公开(公告)日：2023-04-13

申请号：US17961457

申请日：2022-10-06

Applicant: ENTEGRIS, INC.

Inventor： Scott L. Battle ,  Donn K. Naito ,  John N. Gregg ,  Jacob Thomas ,  Chase Parker ,  James Schindler ,  Bryan C. Hendrix ,  Benjamin H. Olson

IPC: C23C16/448 ,  C23C16/455

Abstract: A tray for an ampoule of a delivery system of solid precursor materials used in Atomic Layer Deposition (ALD) processes, Chemical Vapor Deposition (CVD) processes or both. The tray is configured to be able to have a reduced profile size when compressed to enhance the ease of which the tray can be inserted into the ampoule, and the tray is configured to expand in size to make improved contact with inner wall surfaces of the ampoule to provide improved heat transfer from the inner wall to the tray and ultimately to the solid precursor materials disposed on the tray.

公开(公告)号：US10526697B2

公开(公告)日：2020-01-07

申请号：US15556102

申请日：2016-02-28

Applicant: ENTEGRIS, INC.

Inventor： Thomas H. Baum ,  Robert L. Wright, Jr. ,  Scott L. Battle ,  John M. Cleary

IPC: C01G41/00 ,  C23C16/16

Abstract: A solid source material is described for forming a tungsten-containing film. The solid source material is tungsten hexacarbonyl, wherein content of molybdenum is less than 1000 ppm. Such solid source material may be formed by a process including provision of particulate tungsten hexacarbonyl raw material of particles of size less than 5 mm, wherein particles of size greater than 1.4 mm are less than 15% of the particles, and wherein content of molybdenum is less than 1000 ppm, and sintering the particulate tungsten hexacarbonyl raw material at temperature below 100° C. to produce the solid source material as a sintered solid.

公开(公告)号：US09997362B2

公开(公告)日：2018-06-12

申请号：US15302741

申请日：2015-03-26

Applicant: ENTEGRIS, INC.

Inventor： Thomas H. Baum ,  Scott L. Battle ,  David W. Peters ,  Philip S. H. Chen

IPC: H01L21/44 ,  H01L21/285 ,  C07F15/06 ,  C23C16/18 ,  C23C16/56 ,  H01L21/768 ,  C23C16/06 ,  C23C16/455 ,  H01L21/321 ,  H01L23/532

CPC classification number: H01L21/28562 ,  C07F15/06 ,  C23C16/06 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A cobalt deposition process, including: volatilizing a cobalt precursor selected from among CCTBA, CCTMSA, and CCBTMSA, to form a precursor vapor; and contacting the precursor vapor with a substrate under vapor deposition conditions effective for depositing on the substrate (i) high purity, low resistivity cobalt or (ii) cobalt that is annealable by thermal annealing to form high purity, low resistivity cobalt. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms an electrode, capping layer, encapsulating layer, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel display, or solar panel.

公开(公告)号：US20150251920A1

公开(公告)日：2015-09-10

申请号：US14431116

申请日：2013-09-26

Applicant: ENTEGRIS, INC.

Inventor： Weimin Li ,  David W. Peters ,  Scott L. Battle ,  William Hunks

IPC: C01G41/00 ,  C07F11/00 ,  H01B1/02 ,  C09D5/24 ,  C23C16/16 ,  C01C3/11

CPC classification number: C01G41/006 ,  C01C3/11 ,  C07F11/00 ,  C07F11/005 ,  C09D5/24 ,  C23C16/16 ,  C23C16/18 ,  C23C16/4485 ,  H01B1/02

Abstract: A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.

Abstract translation: 用于在衬底上形成含钨材料的钨前体，例如在微电子器件的制造中。 钨前体没有氟含量，并且可以用于固体递送过程或其它气相沉积技术，以形成诸如用于集成电路金属化的元素钨，或氮化钨膜或其它钨化合物膜的膜，其可用作 用于随后的元素钨金属化的基础层。

公开(公告)号：US20240116774A1

公开(公告)日：2024-04-11

申请号：US18376476

申请日：2023-10-04

Applicant: ENTEGRIS, INC.

Inventor： Loren Press ,  Benjamin Garrett ,  Michael Watson ,  Scott L. Battle ,  Thomas M. Cameron ,  Bryan Hendrix

IPC: C01G41/04

CPC classification number: C01G41/04

Abstract: A precursor comprises a tungsten precursor and a carbon-containing material. The precursor comprises less than 0.02% by weight of the carbon-containing material based on a total weight of the precursor. A method for purifying a tungsten precursor may comprise at least one of the following steps: obtaining a source vessel containing a tungsten precursor and a carbon-containing material; separating the tungsten precursor from at least a first portion of the carbon-containing material; recovering a precursor in a collection vessel; or any combination thereof.

公开(公告)号：US20230287564A1

公开(公告)日：2023-09-14

申请号：US18118300

申请日：2023-03-07

Applicant: ENTEGRIS, INC.

Inventor： Bryan C. Hendrix ,  Scott L. Battle ,  Benjamin R. Garrett ,  Carlo Waldfried ,  Gavin Richards

IPC: C23C16/44 ,  C01G41/04 ,  C01G39/00

CPC classification number: C23C16/4404 ,  C01G41/04 ,  C01G39/006

Abstract: A device which can be exposed to chemical vapors, such as a molybdenum vapor, a tungsten vapor, or any combination thereof, which has a coating covering at least a portion thereof. The coating reduces or inhibits mass change at an outer surface of the device from exposure to the vapor. In certain situations, the mass change is a mass gain, and the coating reduces or inhibits the mass gain of equal to or less than 1×10−5 g mm−2.

公开(公告)号：US11421320B2

公开(公告)日：2022-08-23

申请号：US16210244

申请日：2018-12-05

Applicant: ENTEGRIS, INC.

Inventor： David James Eldridge ,  David Peters ,  Robert Wright, Jr. ,  Bryan C. Hendrix ,  Scott L. Battle ,  John Gregg

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/52 ,  C23C16/455

Abstract: A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.

公开(公告)号：US10465286B2

公开(公告)日：2019-11-05

申请号：US15295662

申请日：2016-10-17

Applicant: Entegris, Inc.

Inventor： John N. Gregg ,  Scott L. Battle ,  Jeffrey I. Banton ,  Donn K. Naito ,  Ravi K. Laxman

IPC: C23C16/00 ,  C23C16/448 ,  F17C3/00 ,  F17C3/02 ,  F17C11/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may include an ampoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.

公开(公告)号：US10392700B2

公开(公告)日：2019-08-27

申请号：US15525796

申请日：2015-03-28

Applicant: ENTEGRIS, INC.

Inventor： Thomas H. Baum ,  Robert L. Wright, Jr. ,  Bryan C. Hendrix ,  Scott L. Battle ,  John M. Cleary

IPC: C23C16/448 ,  C23C16/18

Abstract: Vaporizers are described, suited for vaporizing a vaporizable solid source materials to form vapor for subsequent use, e.g., a deposition of metal from organometallic source material vapor on a substrate for manufacture of integrated circuitry, LEDs, photovoltaic panels, and the like. Methods are described of fabricating such vaporizers, including methods of reconfiguring up-flow vaporizers for down-flow operation to accommodate higher flow rate solid delivery of source material vapor in applications requiring same.