公开(公告)号：US20230350290A1

公开(公告)日：2023-11-02

申请号：US18220825

申请日：2023-07-12

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi TAKAHASHI

IPC: G03F7/004 ,  B65D85/00 ,  G03F7/16 ,  G03F7/26 ,  G03F7/20 ,  H01L21/027 ,  G03F7/039 ,  G03F7/00 ,  G03F7/075

CPC classification number: G03F7/0048 ,  B65D85/70 ,  G03F7/161 ,  G03F7/26 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/162 ,  H01L21/027 ,  G03F7/16 ,  G03F7/0392 ,  G03F7/0012 ,  G03F7/0397 ,  G03F7/0758

Abstract: A pattern forming method includes a pre-wetting step of coating a substrate with a chemical liquid so as to obtain a pre-wetted substrate, a resist film forming step of forming a resist film on the pre-wetted substrate by using an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of exposing the resist film, and a development step of developing the exposed resist film by using a developer. The chemical liquid contains a mixture of two or more kinds of organic solvents and an impurity metal containing one kind of element selected from the group consisting of Fe, Cr, Ni, and Pb, in which a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C.

公开(公告)号：US20210139231A1

公开(公告)日：2021-05-13

申请号：US17139045

申请日：2020-12-31

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi TAKAHASHI ,  Tadashi OOMATSU ,  Tetsuya SHIMIZU

IPC: B65D85/00 ,  B65D25/14 ,  B65D81/26 ,  G03F7/32

Abstract: The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.

公开(公告)号：US20200368692A1

公开(公告)日：2020-11-26

申请号：US16991225

申请日：2020-08-12

Applicant: FUJIFILM Corporation

Inventor： Tetsuya SHIMIZU ,  Tetsuya KAMIMURA ,  Tadashi OMATSU ,  Satomi TAKAHASHI

IPC: B01D61/58 ,  B01D65/02 ,  B01D61/18 ,  B01D61/08 ,  B01D69/02 ,  B01D69/12 ,  B01D71/36 ,  B01D71/26 ,  B01D71/56 ,  B01D3/14 ,  H01L21/67

Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series between the inlet portion and the outlet portion and extends from the inlet portion to the outlet portion, in which the filter A includes at least one kind of porous membrane selected from the group consisting of a first porous membrane having a porous base material made of polytetrafluoroethylene and a non-crosslinked coating which is formed to cover the porous base material and contains a perfluorosulfonic acid polymer and a second porous membrane containing polytetrafluoroethylene blended with a perfluorosulfonic acid polymer.

公开(公告)号：US20160056054A1

公开(公告)日：2016-02-25

申请号：US14927798

申请日：2015-10-30

Applicant: FUJIFILM Corporation

Inventor： Satomi TAKAHASHI ,  Tetsuya KAMIMURA ,  Akiko KOYAMA ,  Atsushi MIZUTANI ,  Yasuo SUGISHIMA ,  Satoru MURAYAMA

IPC: H01L21/3213 ,  H01L21/285 ,  C23F1/44 ,  C23F1/30 ,  C23F1/26 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L21/32134 ,  C23F1/26 ,  C23F1/28 ,  C23F1/30 ,  C23F1/44 ,  H01L21/02068 ,  H01L21/28088 ,  H01L21/28518 ,  H01L21/324 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66575

Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching liquid which contains a specific acid compound into contact with the second layer and selectively removing the second layer.

Abstract translation: 提供一种半导体衬底的蚀刻方法，其包括含有锗（Ge）的第一层和包含至少一种选自镍铂（NiPt），钛（Ti），镍（Ni）和钴的金属元素的第二层） （Co），该方法包括：使包含特定酸化合物的蚀刻液与第二层接触并选择性地除去第二层。

公开(公告)号：US20160047053A1

公开(公告)日：2016-02-18

申请号：US14928010

申请日：2015-10-30

Applicant: FUJIFILM Corporation

Inventor： Yasuo SUGISHIMA ,  Satomi TAKAHASHI ,  Akiko KOYAMA ,  Tetsuya KAMIMURA

IPC: C23F1/32 ,  H01L21/306

CPC classification number: C23F1/32 ,  C23F1/38 ,  C23F1/40 ,  C23F1/44 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/30604 ,  H01L21/32134 ,  H01L29/665 ,  H01L29/7833

Abstract: There is provided an etching solution of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing a specific metal element other than germanium (Ge), the etching solution selectively removing the second layer and including an organic alkali compound.

Abstract translation: 提供了包括含有锗（Ge）的第一层和含有除锗（Ge）以外的特定金属元素的第二层的半导体衬底的蚀刻溶液，所述蚀刻溶液选择性地除去第二层并且包含有机碱化合物 。

公开(公告)号：US20240427243A1

公开(公告)日：2024-12-26

申请号：US18827449

申请日：2024-09-06

Applicant: FUJIFILM Corporation

Inventor： Michihiro SHIRAKAWA ,  Satomi TAKAHASHI

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

Abstract: It is an object of the present invention to provide an actinic ray-sensitive or radiation-sensitive resin composition capable of forming a pattern with high LWR performance, a resist film, a pattern forming method, a method for producing an electronic device, and an electronic device. An actinic ray-sensitive or radiation-sensitive resin composition according to the present invention includes a resin that includes a repeating unit represented by a formula (Ia) and a repeating unit represented by a formula (IIa) and has a main chain that is cleaved by exposure, and an ionic compound represented by a formula (III), and the resin satisfies a requirement 1 and a requirement 2.

公开(公告)号：US20230356151A1

公开(公告)日：2023-11-09

申请号：US18354352

申请日：2023-07-18

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Tadashi OMATSU ,  Tetsuya SHIMIZU ,  Satomi TAKAHASHI

IPC: B01D61/58 ,  B01D3/14 ,  B01D61/14 ,  B01D61/18 ,  B01D65/02 ,  B01D69/02 ,  B01D69/08 ,  B01D69/12 ,  B01D71/36 ,  C08F236/20 ,  C08J9/36 ,  H01L21/67

CPC classification number: B01D61/58 ,  B01D3/145 ,  B01D61/145 ,  B01D61/147 ,  B01D61/18 ,  B01D65/02 ,  B01D69/02 ,  B01D69/08 ,  B01D69/12 ,  B01D71/36 ,  C08F236/20 ,  C08J9/365 ,  H01L21/67017 ,  B01D2311/25 ,  B01D2311/2623 ,  B01D2311/2669 ,  B01D2317/02 ,  B01D2321/16 ,  B01D2325/022 ,  B01D2325/36 ,  B01D2325/42 ,  C08J2327/18 ,  C08J2347/00 ,  G03F7/32

Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified and has an inlet portion, an outlet portion, a filter A, a filter B different from the filter A, and a flow path extending from the inlet portion to the outlet portion, in which the filter A and the filter B are arranged in series between the inlet portion and the outlet portion and have, and the filter A is selected from the group consisting of predetermined filters A1, A2, and A3.

公开(公告)号：US20220308449A1

公开(公告)日：2022-09-29

申请号：US17833904

申请日：2022-06-07

Applicant: FUJIFILM Corporation

Inventor： Toru TSUCHIHASHI ,  Satomi TAKAHASHI ,  Tetsuya SHIMIZU

IPC: G03F7/004

Abstract: The present invention provides a treatment liquid excellent in resolution, a property of suppressing reduction in film thickness, and a property of suppressing residues, in a case of being used for at least one of developing or washing a resist film. Further, the present invention provides a pattern forming method for the above-described treatment liquid. The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for performing at least one of development or washing after exposure on a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, the treatment liquid including a first organic solvent that satisfies a predetermined condition and a second organic solvent that satisfies a predetermined condition.

公开(公告)号：US20200368693A1

公开(公告)日：2020-11-26

申请号：US16992499

申请日：2020-08-13

Applicant: FUJIFILM Corporation

Inventor： Tadashi OMATSU ,  Tetsuya KAMIMURA ,  Tetsuya SHIMIZU ,  Satomi TAKAHASHI

IPC: B01D61/58 ,  B01D61/08 ,  B01D61/18 ,  B01D65/02 ,  B01D69/02 ,  B01D69/12 ,  B01D3/14 ,  B01D71/36 ,  B01D71/26 ,  B01D71/56 ,  H01L21/67

Abstract: A filtering device for obtaining a chemical liquid by purifying a liquid to be purified has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series between the inlet portion and the outlet portion and extends from the inlet portion to the outlet portion, in which the filter A has a porous base material made of polyfluorocarbon and a coating layer which is disposed to cover the porous base material and contains a first resin having a hydrophilic group.

公开(公告)号：US20190258165A1

公开(公告)日：2019-08-22

申请号：US16402215

申请日：2019-05-02

Applicant: FUJIFILM Corporation

Inventor： Takashi NAKAMURA ,  Tetsuya KAMIMURA ,  Satomi TAKAHASHI

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/20 ,  G03F7/16

Abstract: An object of the present invention is to provide a chemical liquid which makes it possible to form a thinner resist film having a uniform thickness on a substrate by using a small amount of resist composition and demonstrates excellent defect inhibition performance. Another object of the present invention is to provide a pattern forming method. A chemical liquid of the present invention contains a mixture of two or more kinds of organic solvents, in which the organic solvents are selected from the group consisting of compounds represented by Formulae (1) to (7), compounds represented by Formulae (9) to (11), a 3- to 5-membered cyclic ketone compound that may have a substituent, a cyclic ketone compound with 6 or more members that may have a substituent, a lactone compound, and a lactam compound, the chemical liquid contains or does not contain an ether-based compound other than the compounds represented by Formula (1), Formula (5), Formula (7), and Formulae (9) to (11), and in a case where the chemical liquid contains the ether-based compound, a content of the ether-based compound in the chemical liquid is less than 10 mass ppm with respect to a total mass of the chemical liquid.