公开(公告)号：US20160209746A1

公开(公告)日：2016-07-21

申请号：US15080714

申请日：2016-03-25

Applicant: FUJIFILM Corporation

Inventor： Shuhei YAMAGUCHI ,  Tomotaka TSUCHIMURA ,  Natsumi YOKOKAWA ,  Koutarou TAKAHASHI

IPC: G03F7/038 ,  G03F7/20 ,  C07D487/04 ,  C07C275/24 ,  C07C233/36 ,  G03F7/32 ,  C07D239/10

CPC classification number: G03F7/038 ,  C07C233/36 ,  C07C271/16 ,  C07C271/24 ,  C07C271/34 ,  C07C275/10 ,  C07C275/24 ,  C07C275/26 ,  C07C323/60 ,  C07C2601/14 ,  C07D211/26 ,  C07D233/32 ,  C07D233/36 ,  C07D235/26 ,  C07D239/10 ,  C07D251/30 ,  C07D403/12 ,  C07D487/04 ,  G03F1/08 ,  G03F7/0382 ,  G03F7/0387 ,  G03F7/20 ,  G03F7/32

Abstract: There is provided an active light sensitive or radiation sensitive resin composition which contains (A) an alkali soluble resin and (C) a cross-linking agent represented by the following General Formula (1-0).

Abstract translation: 提供了含有（A）碱溶性树脂和（C）由以下通式（1-0）表示的交联剂的活性光敏或辐射敏感性树脂组合物。

公开(公告)号：US20160131976A1

公开(公告)日：2016-05-12

申请号：US14995356

申请日：2016-01-14

Applicant: FUJIFILM Corporation

Inventor： Tomotaka TSUCHIMURA ,  Kyouhei SAKITA

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/32 ,  G03F1/76 ,  G03F1/50 ,  G03F7/20

CPC classification number: G03F7/039 ,  G03F1/50 ,  G03F1/76 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/32

Abstract: Provided a resist composition for a semiconductor manufacturing process comprising (A) a compound expressed by General Formula (I) below: wherein, in General Formula (I) above, R1 represents an alkyl group, a cycloalkyl group, or an aryl group, R2 represents a univalent organic group, each of R3 to R6 represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a halogen atom, R3 and R4, R4 and R5, or R5 and R6 may be bonded to each other to form an alicyclic ring or an aromatic ring, and X represents an oxygen atom or a sulfur atom.

Abstract translation: 提供一种半导体制造方法用抗蚀剂组合物，其包括（A）由下述通式（I）表示的化合物：其中，在上述通式（I）中，R 1表示烷基，环烷基或芳基，R 2 代表一价有机基团，R 3至R 6各自表示氢原子，烷基，环烷基，芳基或卤原子，R 3和R 4，R 4和R 5或R 5和R 6可以各自键合 另外形成脂环或芳环，X表示氧原子或硫原子。

公开(公告)号：US20150309408A1

公开(公告)日：2015-10-29

申请号：US14794393

申请日：2015-07-08

Applicant: FUJIFILM Corporation

Inventor： Tomotaka TSUCHIMURA ,  Tadateru YATSUO

IPC: G03F7/038 ,  G03F1/50 ,  G03F1/76 ,  G03F7/20

CPC classification number: G03F7/038 ,  G03F1/50 ,  G03F1/76 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/20 ,  G03F7/40

Abstract: A negative resist composition includes an onium salt compound (A) containing a nitrogen atom in its cation moiety, a compound (B) that is configured to produce an acid when exposed to actinic rays or radiation, and a compound (C) containing an acid-crosslinkable group.

Abstract translation: 负性抗蚀剂组合物包括在其阳离子部分含有氮原子的鎓盐化合物（A），被配置为在暴露于光化射线或辐射时产生酸的化合物（B）和含有酸的化合物（C） 交联组。

公开(公告)号：US20140072905A1

公开(公告)日：2014-03-13

申请号：US14073322

申请日：2013-11-06

Applicant: FUJIFILM Corporation

Inventor： Tomotaka TSUCHIMURA ,  Takeshi INASAKI

IPC: G03F1/22 ,  G03F7/039 ,  G03F1/20

CPC classification number: G03F1/20 ,  C08F257/00 ,  G03F1/22 ,  G03F1/76 ,  G03F1/78 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397

Abstract: A positive resist composition contains: (A) a polymer compound having a structure where a hydrogen atom of a phenolic hydroxyl group is replaced by an acid labile group represented by the following formula (I): wherein R represents a monovalent organic group; A represents a group having a polycyclic hydrocarbon ring structure or a group having a polycyclic heterocyclic structure; and * represents a bonding position to an oxygen atom of the phenolic hydroxyl group.

Abstract translation: 正型抗蚀剂组合物包含：（A）具有酚羟基的氢原子被下式（I）表示的酸不稳定基团取代的结构的高分子化合物：其中R表示一价有机基团; A表示具有多环烃环结构的基团或具有多环杂环结构的基团; 和*表示与酚羟基的氧原子的键合位置。

公开(公告)号：US20180364571A1

公开(公告)日：2018-12-20

申请号：US16110394

申请日：2018-08-23

Applicant: FUJIFILM Corporation

Inventor： Ryo NISHIO ,  Masafumi KOJIMA ,  Akiyoshi GOTO ,  Tomotaka TSUCHIMURA ,  Michihiro SHIRAKAWA ,  Keita KATO

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  G03F7/038 ,  G03F7/039 ,  C07C309/12 ,  C07C321/28 ,  C07D327/08 ,  C07D217/08 ,  C07D335/16 ,  C07C309/15 ,  C07C309/17 ,  C07D213/70 ,  C07D333/46 ,  C07J43/00

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).

公开(公告)号：US20180017872A1

公开(公告)日：2018-01-18

申请号：US15718659

申请日：2017-09-28

Applicant: FUJIFILM Corporation

Inventor： Wataru NIHASHI ,  Hideaki TSUBAKI ,  Toru TSUCHIHASHI ,  Tomotaka TSUCHIMURA

IPC: G03F7/32 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F7/325 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2004

Abstract: Provide are a pattern forming method including a step (1) of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition including a resin having an acid-decomposable repeating unit capable of decomposing by the action of an acid to generate an acid having a pKa of 3.0 or less, a step (2) of exposing the film using actinic rays or radiation, and a step (3) of carrying out development using a developer including an organic solvent after the exposure to form a negative tone pattern; and a method for manufacturing an electronic device, including the pattern forming method.

公开(公告)号：US20170059990A1

公开(公告)日：2017-03-02

申请号：US15352662

申请日：2016-11-16

Applicant: FUJIFILM Corporation

Inventor： Tomotaka TSUCHIMURA

IPC: G03F7/038 ,  G03F7/20 ,  G03F1/22 ,  G03F7/16 ,  G03F1/20 ,  G03F7/32 ,  C08F212/14

CPC classification number: G03F7/0382 ,  C08F12/20 ,  C08F12/22 ,  C08F12/24 ,  C08F12/30 ,  C08F212/14 ,  C08F220/06 ,  C08F220/58 ,  C08F2220/301 ,  C08F2220/303 ,  C08F2220/382 ,  C09D125/18 ,  G03F1/20 ,  G03F1/22 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/162 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/322 ,  C08F212/32 ,  C08F244/00 ,  C08F212/08

Abstract: A radiation-sensitive or actinic ray-sensitive resin composition contains a polymer compound (A) including a structural part (a) that is decomposed by irradiation with actinic rays or radiation to generate an acid anion on a side chain and a repeating unit (b) that is represented by the following Formula (I), in the formula, R3 represents a hydrogen atom, an organic group, or a halogen atom, A1 represents an aromatic ring group or an alicyclic group. R1 and R2 each independently represent an alkyl group, a cycloalkyl group, or an aryl group, at least two of A1, R1, or R2 may be bonded to each other to form a ring. B1 and L1 each independently represent a single bond or a divalent linking group, X represents a hydrogen atom or an organic group, n represents an integer of 1 or greater.

Abstract translation: 辐射敏感性或活性光敏感性树脂组合物含有具有结构部位（a）的聚合物化合物（A），其通过活性光线或辐射的照射而分解，并在侧链上产生酸性阴离子， 通式（I）表示的重复单元（b）。 在该式中，R 3表示氢原子，有机基团或卤素原子。 A1表示芳环基或脂环基。 R1和R2各自独立地表示烷基，环烷基或芳基。 A1，R1和R2中的至少两个可以结合在一起形成环。 B1和L1各自独立地表示单键或二价连接基团。 X表示氢原子或有机基团。 n表示1或更大的整数。 当n表示2以上的整数时，L1的多个实例，R1的多个实例，R2的多个实例以及X的多个实例可以彼此相同或不同。

公开(公告)号：US20170003591A1

公开(公告)日：2017-01-05

申请号：US15267252

申请日：2016-09-16

Applicant: FUJIFILM Corporation

Inventor： Hidehiro MOCHIZUKI ,  Koutarou TAKAHASHI ,  Tomotaka TSUCHIMURA

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/26 ,  G03F7/20 ,  G03F1/22

Abstract: A manufacturing method for an actinic ray-sensitive or radiation-sensitive resin composition that contains a resin, an acid generator, an organic acid, and a solvent, includes at least one of (i), (ii), or (iii) below, and a content ratio of the organic acid in the actinic ray-sensitive or radiation-sensitive resin composition is greater than 5% by mass based on a total solid content in the composition; (i) dissolving the organic acid in a solution that does not substantially contain the resin and the acid generator, (ii) dissolving the organic acid in a solution that contains the acid generator and does not substantially contain the resin, and (iii) dissolving the organic acid in a solution that contains the resin and does not substantially contain the acid generator, an actinic ray-sensitive or radiation-sensitive resin composition, an actinic ray-sensitive or radiation-sensitive film, a mask blank including the film, a forming method for a photo mask and a pattern, a manufacturing method for an electronic device, and an electronic device.

Abstract translation: 包含树脂，酸产生剂，有机酸和溶剂的光化射线敏感性或辐射敏感性树脂组合物的制造方法包括下述（i），（ii）或（iii）中的至少一种 ，并且相对于组合物中的总固体成分，光化射线敏感性或辐射敏感性树脂组合物中的有机酸的含量比例大于5质量％ （i）将有机酸溶解在基本上不含树脂和酸发生剂的溶液中，（ii）将有机酸溶解在含有酸发生剂的溶液中，基本上不含树脂，和（iii）溶解 含有树脂的溶液中的有机酸，基本上不含酸产生剂，光化射线敏感性或辐射敏感性树脂组合物，光化射线敏感性或辐射敏感性膜，包含该膜的掩模坯料， 光掩模和图案的形成方法，电子设备的制造方法和电子设备。

公开(公告)号：US20160282720A1

公开(公告)日：2016-09-29

申请号：US15176345

申请日：2016-06-08

Applicant: FUJIFILM Corporation

Inventor： Koutarou TAKAHASHI ,  Tomotaka TSUCHIMURA ,  Shuhei YAMAGUCHI ,  Natsumi YOKOKAWA ,  Hidehiro MOCHIZUKI

IPC: G03F7/038 ,  G03F7/32 ,  G03F1/78 ,  G03F7/20 ,  G03F1/24 ,  G03F1/50

CPC classification number: G03F7/038 ,  G03F1/24 ,  G03F1/50 ,  G03F1/78 ,  G03F7/0382 ,  G03F7/2059 ,  G03F7/32

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes an alkali-soluble resin (A) having a phenolic hydroxyl group, and a crosslinking agent (C) having two or more hydroxymethyl groups or alkoxymethyl groups in total within the molecule, wherein the composition contains a crosslinking agent (C1) having a molecular weight of 420 or more and also having two to four hydroxymethyl groups or alkoxymethyl groups in total within the molecule in a proportion of 60 mol % to 100 mol % based on the total amount of the crosslinking agent (C) including the crosslinking agent (C1), and in which the total concentration of the hydroxymethyl groups or the alkoxymethyl groups of the crosslinking agent (C) relative to 1 g of the solid content in the actinic ray-sensitive or radiation-sensitive resin composition is 0.30 mmol/g or more.

Abstract translation: 光化射线敏感或辐射敏感性树脂组合物包括具有酚羟基的碱溶性树脂（A）和在分子内总共具有两个或多个羟甲基或烷氧基甲基的交联剂（C），其中 组合物含有分子量为420以上的交联剂（C1），并且在分子内总共具有2〜4个羟甲基或烷氧基甲基，比例为60〜100摩尔％ 包含交联剂（C1）的交联剂（C），其中交联剂（C）的羟甲基或烷氧基甲基的总浓度相对于光化射线敏感或辐射中的固体含量1g 敏感性树脂组合物为0.30mmol / g以上。

公开(公告)号：US20150010855A1

公开(公告)日：2015-01-08

申请号：US14497560

申请日：2014-09-26

Applicant: FUJIFILM CORPORATION

Inventor： Tomotaka TSUCHIMURA ,  Takuya TSURUTA ,  Takeshi INASAKI ,  Koutarou TAKAHASHI

IPC: G03F7/027 ,  G03F1/00 ,  G03F1/22 ,  G03F7/20 ,  G03F1/20 ,  G03F7/038 ,  G03F7/004

CPC classification number: G03F7/027 ,  C08F12/22 ,  C08F12/24 ,  C08F12/26 ,  C08F12/30 ,  C08F12/32 ,  C08F212/14 ,  C09D125/18 ,  G03F1/00 ,  G03F1/20 ,  G03F1/22 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0388 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2037 ,  G03F7/2039 ,  C08F212/32 ,  C08F212/08

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive composition containing (α) a compound represented by the formula (αI) capable of generating an acid having a size of 200 Å3 or more in volume and (β) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and the formula (αI) is defined as herein, and a resist film formed using the actinic ray-sensitive or radiation-sensitive composition, a resist-coated mask blanks coated with the resist film, a resist pattern forming method comprising exposing the resist film and developing the exposed film, a photomask obtained by exposing and developing the resist-coated mask blanks, a method for manufacturing an electronic device, comprising the resist pattern forming method and an electronic device manufactured by the manufacturing method of an electronic device.

Abstract translation: 提供了一种光化射线敏感或辐射敏感性组合物，其包含（α）由式（αI）表示的化合物，其能够产生体积为200或更大的酸的量（＆bgr） 在用光化射线或辐射照射时产生酸，并且式（αI）如本文所定义，并且使用光化射线敏感或辐射敏感组合物形成的抗蚀剂膜，涂覆有抗蚀剂的抗蚀剂涂覆的掩模毛坯 膜，抗蚀剂图案形成方法，包括曝光抗蚀剂膜和显影曝光的膜，通过曝光和显影抗蚀剂涂覆的掩模毛坯获得的光掩模，电子器件的制造方法，包括抗蚀剂图案形成方法和电子器件 通过电子设备的制造方法制造。