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54 条记录 (耗时 0.021 秒)

    Graphene on Semiconductor Detector
    11.
    发明申请
    Graphene on Semiconductor Detector 有权
    石墨烯半导体探测器

    公开(公告)号：US20140367824A1

    公开(公告)日：2014-12-18

    申请号：US14471001

    申请日：2014-08-28

    申请人： Francis J. Kub ,  Karl D. Hobart ,  Travis J. Anderson

    发明人： Francis J. Kub ,  Karl D. Hobart ,  Travis J. Anderson

    IPC分类号： H01L31/028

    CPC分类号： H01L31/028 ,  H01L27/14643 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/148 ,  H01L31/0336

    摘要： Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.

    摘要翻译： 提出了紫外或极紫外和/或可见的检测器装置和制造方法，其中检测器包括设置在半导体表面上的薄的石墨烯电极结构，以在半导体材料表面中建立电位并且收集光生载流子，第一 接触提供用于半导体结构的顶侧或底侧连接以及用于连接到石墨烯层的第二接触。

    Double sided IGBT phase leg architecture and clocking method for reduced turn on loss
    13.
    发明授权
    Double sided IGBT phase leg architecture and clocking method for reduced turn on loss 失效
    双相IGBT相位腿结构和时钟方式可减少开路损耗

    公开(公告)号：US06856520B2

    公开(公告)日：2005-02-15

    申请号：US10441033

    申请日：2003-05-20

    申请人： John M. Neilson ,  Francis J. Kub ,  Karl D. Hobart

    发明人： John M. Neilson ,  Francis J. Kub ,  Karl D. Hobart

    IPC分类号： H01L29/739 ,  H02J7/00 ,  H03K17/687 ,  H02M3/335

    CPC分类号： H03K17/6871 ,  H01L29/7395 ,  H02J7/0029 ,  H02M7/003

    摘要： A double-side IGBT (DIGBT) phase leg architecture that uses the DIGBT as a substitute for a free wheeling diode to achieve reduced turn-on loss and reduced reverse recovery peak current during turn-on is described and characterized. Approximately a 50% reduction in reverse recovery peak current and an 80% reduction in recovery charge are achieved. In addition, low power dissipation (≈1 A current level) protection circuitry is described that can be incorporated into the DIGBT phase leg architecture to allow the flow of reverse current even if the gate driver circuit is disabled so that conventional high current free wheeling diodes are not required to provide protection.

    摘要翻译： 描述和表征了双端IGBT（DIGBT）相架结构，其使用DIGBT作为替代续流二极管以实现降低的导通损耗和降低反向恢复峰值电流的导通。 反向恢复峰值电流减少了约50％，恢复电荷减少了80％。 此外，描述了低功耗（≈1A电流电平）保护电路，其可以被并入到DIGBT相位脚架构中，以允许反向电流的流动，即使栅极驱动器电路被禁用，使得传统的高电流续流二极管 不需要提供保护。

    Low temperature hydrophobic direct wafer bonding
    14.
    发明授权
    Low temperature hydrophobic direct wafer bonding 失效
    低温疏水直接晶圆键合

    公开(公告)号：US06787885B2

    公开(公告)日：2004-09-07

    申请号：US10287883

    申请日：2002-11-04

    申请人： Robert H. Esser ,  Karl D. Hobart ,  Francis J. Kub

    发明人： Robert H. Esser ,  Karl D. Hobart ,  Francis J. Kub

    IPC分类号： H01L2904

    CPC分类号： H01L29/66333 ,  H01L21/187 ,  H01L23/482 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of making an electronic device comprising the steps of: providing a plurality of wafers, each wafer comprising a bonding surface; etching one or more trenches into one or more bonding surfaces, the trenches substantially perpendicular to a preferred direction of diffusion along one or more of the bonding surfaces; rendering the bonding surfaces hydrophobic; and bonding the bonding surfaces together by direct wafer bonding. A semiconductor structure comprising a plurality of wafers, each wafer comprising a bonding surface, one or more bonding surfaces comprising one or more trenches substantially perpendicular to a preferred direction of diffusion along one or more of the bonding surfaces; and the bonding surfaces bonded together by a direct wafer bonding interface.

    摘要翻译： 一种制造电子器件的方法，包括以下步骤：提供多个晶片，每个晶片包括接合表面; 将一个或多个沟槽蚀刻成一个或多个接合表面，所述沟槽基本上垂直于沿着一个或多个所述接合表面的优选扩散方向; 使粘合表面疏水; 并通过直接晶片接合将结合表面结合在一起。 一种包括多个晶片的半导体结构，每个晶片包括接合表面，一个或多个结合表面，包括一个或多个基本上垂直于优选的沿着一个或多个粘结表面的扩散方向的沟槽; 以及通过直接晶片接合界面结合在一起的接合表面。

    Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques
    15.
    发明授权
    Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques 失效
    使用薄膜转移和氢离子分离技术制备热电，电光和去耦电容器的方法

    公开(公告)号：US06607969B1

    公开(公告)日：2003-08-19

    申请号：US10098321

    申请日：2002-03-18

    申请人： Francis J. Kub ,  Karl D. Hobart

    发明人： Francis J. Kub ,  Karl D. Hobart

    IPC分类号： H01L2130

    CPC分类号： H01L21/8221 ,  H01L21/76254 ,  H01L2924/00011 ,  Y10T156/1158 ,  H01L2224/80001

    摘要： A method for making a thin film device or pyroelectric sensor is provided. A film layer of thin film functional material is grown on a large diameter growth substrate. One or more protective layers may be deposited on the surface of the growth substrate before the thin film functional material is deposited. Hydrogen is implanted to a selected depth within the growth substrate or within a protective layer to form a hydrogen ion layer. The growth substrate and associated layers are bonded to a second substrate. The layers are split along the hydrogen ion implant and the portion of the growth substrate and associated layers that are on the side of the ion layer away from the second substrate are removed.

    摘要翻译： 提供了制造薄膜器件或热电传感器的方法。 在大直径生长基材上生长薄膜功能材料的薄膜层。 在沉积薄膜功能材料之前，可以在生长衬底的表面上沉积一个或多个保护层。 将氢气注入生长衬底内的选定深度或保护层内以形成氢离子层。 生长衬底和相关层结合到第二衬底。 这些层沿着氢离子注入分裂，除去离子层离开第二衬底一侧的生长衬底和相关层的部分。

    Vertical conducting power semiconductor devices implemented by deep etch
    18.
    发明授权
    Vertical conducting power semiconductor devices implemented by deep etch 有权
    通过深蚀刻实现的垂直导电功率半导体器件

    公开(公告)号：US07132321B2

    公开(公告)日：2006-11-07

    申请号：US10278861

    申请日：2002-10-24

    申请人： Francis J. Kub ,  Karl D. Hobart

    发明人： Francis J. Kub ,  Karl D. Hobart

    IPC分类号： H01L21/338

    CPC分类号： H01L29/7802 ,  H01L24/32 ,  H01L29/0657 ,  H01L29/41741 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/7803 ,  H01L29/868 ,  H01L29/872 ,  H01L2924/01322 ,  H01L2924/10155 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00

    摘要： Semiconductor substrates suitable for making thin vertical current conducting devices are made by providing a relatively thick semiconducting substrate with at least one conductivity type having a thickness of from about 100 μm to 700 μm. At least one active device region is optionally first formed on a first side. Then the semiconducting substrate is thinned in at least one selected region on the other side below at least partially where the active device will be on the first side so as to have the selected region thinned to a thickness ranging from about 10 μm to 400 μm to form at least one deep trench. The depth of the thinning of the semiconducting substrate is controlled when the substrate has more than one conductivity type layers or more than one conductivity type layer concentrations so that either (a) some of the first thinned conductivity type layer or some of the first thinned conductivity type layer concentration remains or (b) the thinning proceeds all the way through the first conductivity type layer or all the way through the first conductivity type layer concentration. A conductivity type dopant can be optionally formed in the semiconductor substrate in the thinned selected region on the second side. Finally, a current electrode is formed on the second side in contact with said thinned selected region or said conductivity type dopant in said thinned selected region. In the event the at least one active device region was not initially formed in the first step, then it can be formed at the end.

    摘要翻译： 适于制造薄的垂直导电装置的半导体衬底是通过提供具有至少一种具有约100μm至700μm厚度的导电类型的相对较厚的半导体衬底而制成的。 可选地，至少一个有源器件区域首先形成在第一侧上。 然后半导体衬底在另一侧的至少一个选定区域中至少部分地变薄，其中有源器件将处于第一侧，使得选定的区域变薄到从约10μm至400μm的厚度至 形成至少一个深沟槽。 当衬底具有多于一种导电类型层或多于一种导电类型层浓度时，半导体衬底的变薄的深度受到控制，使得（a）第一薄化导电类型层中的一些或第一稀释导电类型的一些 类型层浓度保持不变或（b）薄化一直贯穿第一导电类型层或一直通过第一导电类型层浓度。 导电型掺杂剂可以任选地形成在第二侧的稀薄的选定区域中的半导体衬底中。 最后，在所述稀薄的所选区域中，与所述变薄的选​​定区域或所述导电型掺杂剂接触的第二侧上形成电流电极。 在第一步骤中最初没有形成至少一个有源器件区域的情况下，可以在末端形成。

    Method for making electro-optical devices using a hydrogenion splitting technique
    19.
    发明授权
    Method for making electro-optical devices using a hydrogenion splitting technique 有权
    使用氢分解技术制造电光装置的方法

    公开(公告)号：US06593212B1

    公开(公告)日：2003-07-15

    申请号：US09985958

    申请日：2001-10-29

    申请人： Francis J. Kub ,  Karl D. Hobart

    发明人： Francis J. Kub ,  Karl D. Hobart

    IPC分类号： H01L2130

    CPC分类号： H01L21/76254

    摘要： A method is provided for transferring an electro-optical layer grown on a growth substrate to a handle substrate. The method includes implanting hydrogen ions in the transfer substrate to form an intermediate hydrogen ion implant layer and bonding the transfer substrate to the handle substrate to form a joined structure. The joined structure is heated to a temperature sufficient to split the joined structure to thereby transfer a portion of the electro-optical layer to the handle substrate.

    摘要翻译： 提供一种将在生长衬底上生长的电光层转印到手柄衬底上的方法。 该方法包括将氢离子注入转移衬底中以形成中间氢离子注入层并将转移衬底结合到手柄衬底以形成接合结构。 将接合结构加热到足以分开接合结构的温度，从而将电光层的一部分转移到手柄基板。

    Electronic device with composite substrate
    20.
    发明授权
    Electronic device with composite substrate 有权

    公开(公告)号：US06497763B2

    公开(公告)日：2002-12-24

    申请号：US09764349

    申请日：2001-01-19

    申请人： Francis J. Kub ,  Karl D. Hobart

    发明人： Francis J. Kub ,  Karl D. Hobart

    IPC分类号： C30B2518

    CPC分类号： H01L21/2007 ,  Y10S117/915

    摘要： A method for making a multilayered electronic device with at least one epitaxial layer grown on a single-crystal film bonded to a composite wherein at least one layer is polycrystalline, the method includes the step of bonding a single-crystal film at least one of the epitaxial layers on the single-crystal film wherein thermal coefficients of expansion for the substrate and the epitaxial layer are closely matched.