公开(公告)号：US09685513B2

公开(公告)日：2017-06-20

申请号：US14060916

申请日：2013-10-23

申请人： Francis J. Kub ,  Travis J. Anderson ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Karl D. Hobart

IPC分类号： H01L23/532 ,  H01L29/16 ,  H01L29/205 ,  H01L29/20 ,  H01L29/78 ,  H01L29/66 ,  H01L29/778 ,  H01L23/373

CPC分类号： H01L29/1602 ,  H01L23/3732 ,  H01L23/5329 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/78

摘要： Semiconductor devices that include a semiconductor structure integrated with one or more diamond material layers. A first diamond material layer is formed on a bottom surface and optionally, the side surfaces of the semiconductor structure. In some embodiments, at least a portion of the semiconductor structure is embedded in the diamond. An electrical device can be formed on a top surface of the semiconductor structure. A second diamond material layer can be formed on the top surface of the semiconductor structure. The semiconductor structure can include a III-nitride material such as GaN, which can be embedded within a the first diamond material layer or encased by the first and/or second diamond material layer.

公开(公告)号：US09196614B2

公开(公告)日：2015-11-24

申请号：US14617510

申请日：2015-02-09

申请人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

IPC分类号： H01L27/095 ,  H01L29/78 ,  H01L29/20 ,  H01L29/66 ,  H01L29/417 ,  H01L29/778 ,  H01L29/10 ,  H01L21/285 ,  H01L29/45 ,  H01L29/205 ,  H01L21/8228 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/04 ,  H01L29/201 ,  H01L29/36 ,  H01L21/8252 ,  H01L21/02 ,  H01L21/265 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/762 ,  H01L29/207 ,  H01L29/16 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L27/095 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/30612 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/092 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/365 ,  H01L29/407 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/452 ,  H01L29/51 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7831

摘要： An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride barrier material, a second material layer, a two-dimensional hole gas in the second layer, and wherein the gallium-polar material comprises one or more III-Nitride epitaxial material layers grown such that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making an inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the gallium-polar (0001) face is the dominant face, growing a nucleation layer, growing a gallium-polar epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

摘要翻译： 在通道中具有空穴载流子的反向P沟道III族氮化物场效应晶体管，其包含镓极性III-氮化物阻挡材料，第二材料层，第二层中的二维空穴气体，并且其中镓极性 材料包括一个或多个生长的III-Nitride外延材料层，使得当外延生长GaN时，外延层的顶表面是镓极性的。 在通道中制造具有空穴载流子的反相P沟道III族氮化物场效应晶体管的方法，包括选择衬底的面或切口取向，使得镓极（0001）面是主要面，生长成核层 ，生长镓极性外延层，掺杂外延层，生长势垒层，蚀刻GaN，形成接触，执行器件隔离，限定栅极开口，沉积和限定栅极金属，形成接触窗口，沉积和限定 厚金属。

公开(公告)号：US20150221760A1

公开(公告)日：2015-08-06

申请号：US14617510

申请日：2015-02-09

申请人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L29/201 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  H01L21/265 ,  H01L21/3065 ,  H01L29/36 ,  H01L29/66 ,  H01L29/04

CPC分类号： H01L27/095 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/30612 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/092 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/365 ,  H01L29/407 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/452 ,  H01L29/51 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7831

摘要： An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride first material, a barrier material layer, a two-dimensional hole gas in the barrier layer, and wherein the gallium-polar material comprises one or more III-Nitride epitaxial material layers grown such that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making an inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the gallium-polar (0001) face is the dominant face, growing a nucleation layer, growing a gallium-polar epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

摘要翻译： 在通道中具有空穴载流子的反相P沟道III族氮化物场效应晶体管，其包含镓极性III-氮化物第一材料，阻挡材料层，阻挡层中的二维空穴气体，并且其中镓极性 材料包括一个或多个生长的III-Nitride外延材料层，使得当外延生长GaN时，外延层的顶表面是镓极性的。 在通道中制造具有空穴载流子的反相P沟道III族氮化物场效应晶体管的方法，包括选择衬底的面或切口取向，使得镓极（0001）面是主要面，生长成核层 ，生长镓极性外延层，掺杂外延层，生长势垒层，蚀刻GaN，形成接触，执行器件隔离，限定栅极开口，沉积和限定栅极金属，形成接触窗口，沉积和限定 厚金属。

公开(公告)号：US09029833B2

公开(公告)日：2015-05-12

申请号：US14471001

申请日：2014-08-28

申请人： Francis J. Kub ,  Karl D. Hobart ,  Travis J. Anderson

发明人： Francis J. Kub ,  Karl D. Hobart ,  Travis J. Anderson

IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L31/028 ,  H01L27/148 ,  H01L31/0336 ,  H01L27/146

CPC分类号： H01L31/028 ,  H01L27/14643 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/148 ,  H01L31/0336

摘要： Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.

摘要翻译： 提出了紫外或极紫外和/或可见的检测器装置和制造方法，其中检测器包括设置在半导体表面上的薄的石墨烯电极结构，以在半导体材料表面中建立电位并且收集光生载流子，第一 接触提供用于半导体结构的顶侧或底侧连接以及用于连接到石墨烯层的第二接触。

公开(公告)号：US20140141580A1

公开(公告)日：2014-05-22

申请号：US14165602

申请日：2014-01-28

申请人： Francis J. Kub ,  Travis Anderson ,  Karl D. Hobart ,  Michael A. Mastro ,  Charles R. Eddy, Jr.

发明人： Francis J. Kub ,  Travis Anderson ,  Karl D. Hobart ,  Michael A. Mastro ,  Charles R. Eddy, Jr.

IPC分类号： H01L29/66

CPC分类号： H01L29/778 ,  H01L29/0847 ,  H01L29/0891 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786

摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.

摘要翻译： 提出了高电子迁移率晶体管和制造工艺，其中提供均匀厚度的阻挡材料层用于在栅极区域中去除ECCIML层的源极和漏极区域内的增强沟道电荷诱导材料层（ECCIML）下的阈值电压控制。

公开(公告)号：US08723218B2

公开(公告)日：2014-05-13

申请号：US13605024

申请日：2012-09-06

申请人： Karl D. Hobart ,  Francis J. Kub ,  Mario Ancona ,  Eugene A. Imhoff

发明人： Karl D. Hobart ,  Francis J. Kub ,  Mario Ancona ,  Eugene A. Imhoff

IPC分类号： H01L29/74

CPC分类号： H01L29/1608 ,  H01L21/02365 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/6606 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/8613 ,  H01L29/872

摘要： Silicon carbide PiN diodes are presented with reduced temperature coefficient crossover points by limited p type contact area to limit hole injection in the n type drift layer in order to provide a lower current at which the diode shifts from negative temperature coefficient to a positive temperature coefficient of forward voltage for mitigating thermal runaway.

摘要翻译： 碳化硅PiN二极管通过有限的p型接触面积具有降低的温度系数交叉点，以限制n型漂移层中的空穴注入，以便提供二极管从负温度系数偏移到正温度系数的较低电流 正向电压，用于减轻热失控。

公开(公告)号：US08445383B2

公开(公告)日：2013-05-21

申请号：US12205652

申请日：2008-09-05

申请人： Karl D. Hobart ,  Tatyana I Feygelson ,  Marko J Tadjer ,  Joshua D. Caldwell ,  Kendrick X Liu ,  Francis J. Kub ,  Michael A Mastro ,  James E Butler

发明人： Karl D. Hobart ,  Tatyana I Feygelson ,  Marko J Tadjer ,  Joshua D. Caldwell ,  Kendrick X Liu ,  Francis J. Kub ,  Michael A Mastro ,  James E Butler

IPC分类号： H01L21/302

CPC分类号： H01S5/183 ,  H01L21/0495 ,  H01L29/6606 ,  H01S5/0425 ,  H01S5/32341

摘要： A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n− and p− SiC epilayers. I-V measurements on p+ NCD/n− SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.

摘要翻译： 开发了NCD和4H-SiC薄膜之间的异质结。 未掺杂和B掺杂的NCD沉积在n-和p- SiC外延层上。 在p + NCD / n-SiC上的IV测量显示肖特基整流行为具有约0.2V的导通电压。电流增加超过8个数量级，在30℃下的理想因子为1.17。理想的能带图表示 从SiC导带到NCD膜的价带或受体水平的电子传输的可能传导机制。

公开(公告)号：US06767749B2

公开(公告)日：2004-07-27

申请号：US10126662

申请日：2002-04-22

申请人： Francis J. Kub ,  Karl D. Hobart

发明人： Francis J. Kub ,  Karl D. Hobart

IPC分类号： H01L2100

CPC分类号： H03H3/02 ,  H01L21/76254 ,  H01L27/20 ,  H01L29/7849 ,  H01L41/312 ,  H01L41/313 ,  H03H3/08 ,  H03H9/02574 ,  H03H2003/021 ,  H03H2003/023 ,  H03H2003/025

摘要： Thin layers of high quality single-crystal piezoelectric material, high temperature sintered piezoelectric material, or high quality thin film grown material are transferred to an appropriate substrate using hydrogen ion implant layer splitting and bonding. The substrate to which the thin piezoelectric material layer is transferred may contain CMOS or GaAs circuitry. When the substrate contains CMOS or GaAs circuitry, the circuitry on the surface of the GaAs or CMOS substrate may be covered with an oxide. The oxide is then planarized using chemical mechanical polishing, and the thin film resonator material is transferred to the GaAs or CMOS circuit using wafer bonding and hydrogen ion layer splitting.

摘要翻译： 使用氢离子注入层分离和接合将高质量单晶压电材料，高温烧结压电材料或高质量薄膜生长材料的薄层转移到合适的衬底。 薄压电材料层被转移到的衬底可以包含CMOS或GaAs电路。 当衬底包含CMOS或GaAs电路时，GaAs或CMOS衬底表面上的电路可能被氧化物覆盖。 然后使用化学机械抛光使氧化物平坦化，并且使用晶片键合和氢离子层分裂将薄膜谐振器材料转移到GaAs或CMOS电路。

公开(公告)号：US06242324B1

公开(公告)日：2001-06-05

申请号：US09371782

申请日：1999-08-10

申请人： Francis J. Kub ,  Karl D. Hobart

发明人： Francis J. Kub ,  Karl D. Hobart

IPC分类号： H01J2130

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/2007 ,  H01L21/8221 ,  H01L27/0688 ,  H01L2924/00011 ,  H01L2224/80001

摘要： An aspect of the present invention is a method for making a functional active device (photodetector, laser, LED, optical modulator, optical switch, field effect transistor, MOSFET, MODFET, high electron mobility transistor, heterojunction bipolar transistor, resonant tunneling device, Esaki tunneling device etc.) disposed over a complementary metal oxide semiconductor (CMOS) device, having the steps; (a) forming an ultrathin compliant layer direct bonded to an oxide layer over said-CMOS device; (b) growing an epitaxial layer on said ultra-thin compliant layer (c) forming a functional active device in said epitaxial layer grown on said epitaxial layer that is grown on said ultrathin compliant layer; and (c) interconnecting said functional active device and said CMOS device, wherein said CMOS device is configured as either a readout circuit or a control circuit for said photodetector.

摘要翻译： 本发明的一个方面是制造功能有源器件（光电检测器，激光器，LED，光调制器，光开关，场效应晶体管，MOSFET，MODFET，高电子迁移率晶体管，异质结双极晶体管，谐振隧穿装置，Esaki 隧道装置等），其设置在互补金属氧化物半导体（CMOS）装置上，具有这些步骤; （a）在所述CMOS器件上形成直接结合到氧化物层的超薄柔性层; （b）在所述超薄顺应层上生长外延层（c），以在所述外延层上生长的所述外延层上形成功能有源器件，所述外延层生长在所述超薄柔性层上; 和（c）互连所述功能有源器件和所述CMOS器件，其中所述CMOS器件被配置为用于所述光电检测器的读出电路或控制电路。

公开(公告)号：US09275998B2

公开(公告)日：2016-03-01

申请号：US14265214

申请日：2014-04-29

申请人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L21/335 ,  H01L21/20 ,  H01L27/095 ,  H01L29/78 ,  H01L29/40 ,  H01L29/66 ,  H01L29/417 ,  H01L29/10 ,  H01L21/285 ,  H01L29/45 ,  H01L29/205 ,  H01L21/8228 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/04 ,  H01L29/201 ,  H01L29/36 ,  H01L21/8252 ,  H01L21/02 ,  H01L21/265 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/762 ,  H01L29/207 ,  H01L29/16 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L27/095 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/30612 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/092 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/365 ,  H01L29/407 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/452 ,  H01L29/51 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7831

摘要： An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride grown epitaxially on a substrate, a barrier, a two-dimensional hole gas in the barrier layer material at the heterointerface of the first material, and wherein the gallium-polar III-Nitride material comprises III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face of a substrate so that the gallium-polar (0001) face is the dominant face for growth of III-Nitride epitaxial layer growth material, growing a GaN epitaxial layer, doping, growing a barrier, etching, forming a contact, performing device isolation, defining a gate opening, defining gate metal, making a contact window, and depositing and defining a thick metal.

摘要翻译： 在通道中具有空穴载流子的反向P沟道III族氮化物场效应晶体管，包括在衬底上外延生长的镓极化III-氮化物，势垒，阻挡层材料中二维空穴气体在异质界面处 第一材料，并且其中所述镓极性III-氮化物材料包含以这样的方式生长的III-氮化物外延材料层，使得当外延生长GaN时，所述外延层的顶表面是镓极性的。 在通道中制造具有空穴载流子的P沟道III族氮化物场效应晶体管的方法，包括选择衬底的表面，使得镓极（0001）面是III-氮化物外延层生长生长的主要面 材料，生长GaN外延层，掺杂，生长势垒，蚀刻，形成接触，执行器件隔离，限定栅极开口，限定栅极金属，形成接触窗口以及沉积和限定厚金属。