公开(公告)号：US20150117484A1

公开(公告)日：2015-04-30

申请号：US14520500

申请日：2014-10-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Tadataka EDAMURA ,  Naota AKIKUSA

IPC: H01S5/34

CPC classification number: H01S5/3401 ,  H01S5/0207 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0285 ,  H01S5/0286 ,  H01S5/0287 ,  H01S5/22 ,  H01S5/34

Abstract: A quantum cascade laser includes a semiconductor substrate, and an active layer being provided on the substrate, and having a cascade structure in which quantum well emission layers and injection layers are alternately laminated, and the laser has a base portion including the substrate, and a stripe-shaped ridge portion including the active layer. Further, a reflection control film is formed from a ridge end face over a base end face on an end face in a resonating direction of the laser, and, on the base end face, for a second side and a third side adjacent to a first side on the ridge portion side of the base end face, and a fourth side facing the first side, the reflection control film is formed on a region other than regions near those three sides with predetermined widths.

Abstract translation: 量子级联激光器包括半导体衬底，并且有源层设置在衬底上，并且具有量子阱发射层和注入层交替层叠的级联结构，并且激光器具有包括衬底的基部，以及 包括活性层的条纹状脊部。 此外，在激光的共振方向的端面上的基端面上的脊端面形成反射控制膜，并且在基端面上，与第一侧面相邻的第二侧面和第三侧面 在基端面的脊部侧的侧面以及面向第一侧的第四面，反射控制膜形成在除了三边以外的区域以外的区域上，具有预定的宽度。

公开(公告)号：US20230132974A1

公开(公告)日：2023-05-04

申请号：US17914525

申请日：2021-03-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Tadataka EDAMURA ,  Naota AKIKUSA

IPC: H01S5/34 ,  H01S5/026 ,  H01S5/227 ,  H01S5/042

Abstract: A quantum-cascade laser element includes: a semiconductor substrate; a semiconductor mesa formed on the semiconductor substrate to include an active layer having a quantum-cascade structure and to extend along a light waveguide direction; an embedding layer formed to interpose the semiconductor mesa along a width direction of the semiconductor substrate; a cladding layer formed over the semiconductor mesa and over the embedding layer; and a metal layer formed on the cladding layer. A pair of groove portions extending along the light waveguide direction are formed in a surface on an opposite side of the cladding layer from the semiconductor substrate. The pair of groove portions are disposed in two respective outer regions when the cladding layer is equally divided into four regions in the width direction of the semiconductor substrate. The metal layer enters the pair of groove portions.

公开(公告)号：US20230087419A1

公开(公告)日：2023-03-23

申请号：US17945252

申请日：2022-09-15

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Takahide OCHIAI ,  Tadataka EDAMURA

IPC: H01S5/14 ,  H01S5/34 ,  H01S5/023 ,  H01S5/02253 ,  H01S5/0236

Abstract: The laser module includes a QCL element, a diffraction grating unit, a first lens holder, a second lens holder, and a mount member. The first mounting portion has a first top surface on which the first lens holder is mounted via an adhesive layer. The third mounting portion has a third top surface on which the second lens holder is mounted via an adhesive layer. The second mounting portion has a second top surface located higher than the first top surface and the third top surface, a first side surface connecting the second top surface and the first top surface, and a second side surface connecting the second top surface and the third top surface. A notch extending from the second top surface to the first top surface or the third top surface is formed in at least one of the first side surface and the second side surface.

公开(公告)号：US20220271506A1

公开(公告)日：2022-08-25

申请号：US17672768

申请日：2022-02-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Takahide OCHIAI ,  Tadataka EDAMURA ,  Naota AKIKUSA

IPC: H01S5/14 ,  H01S5/02345 ,  H01S5/02325

Abstract: The laser module includes a QCL element, a MEMS diffraction grating, a lens holder holding a lens disposed between the QCL element and the MEMS diffraction grating, a package, an electrode terminal disposed along an inner wall surface of the package, and a wire for electrically connecting the electrode terminal and a coil. The top wall of the package faces the bottom wall of the package in a direction orthogonal to the optical axis direction of the lens. The MEMS diffraction grating includes an electrode pad electrically connected to the coil. The electrode pad is connected to the electrode terminal via the wire. A height position of the electrode pad with respect to the bottom wall is equal to or higher than a height position of the electrode terminal with respect to the bottom wall.

公开(公告)号：US20220271505A1

公开(公告)日：2022-08-25

申请号：US17672772

申请日：2022-02-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Takahide OCHIAI ,  Tadataka EDAMURA ,  Naota AKIKUSA

IPC: H01S5/14 ,  H01S5/02253

Abstract: The laser module includes a QCL element, a MEMS diffraction grating, a lens holder for holding a lens disposed between the QCL element and the MEMS diffraction grating, and a package. The package includes a bottom wall, a side wall erected on the bottom wall and formed in an annular shape so as to surround a region in which the QCL element is accommodated, and a top wall closing an opening of the side wall on a side opposite to a side where the bottom wall is disposed. The top wall faces the bottom wall in a direction orthogonal to the optical axis direction of the lens, and the distance between the top wall and a surface of the lens holder on a side where the top wall is disposed is smaller than a thickness of the lens holder along the optical axis direction of the lens.

公开(公告)号：US20220037849A1

公开(公告)日：2022-02-03

申请号：US17414070

申请日：2019-12-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akio ITO ,  Yoshitaka KUROSAKA ,  Masahiro HITAKA ,  Kazuyoshi HIROSE ,  Tadataka EDAMURA

IPC: H01S5/026 ,  H01S5/042 ,  H01S5/343 ,  H01S5/0236 ,  G06F30/10

Abstract: The light-emitting element of an embodiment outputs a clear optical image while suppressing light output efficiency reduction, and includes a substrate, a light-emitting unit, and a bonding layer. The light-emitting unit has a semiconductor stack, including a phase modulation layer, between first and second electrodes. The phase modulation layer has a base layer and modified refractive index regions, and includes a first region having a size including the second electrode, and a second region. Each gravity center of the second region's modified refractive index region is arranged by an array condition. The light from the stack is a single beam, and regarding a first distance from the substrate to the stack's front surface and a second distance from the substrate to the stack's back surface, a variation amount of the first distance along a direction on the substrate is smaller than a variation amount of the second distance.

公开(公告)号：US20190074664A1

公开(公告)日：2019-03-07

申请号：US16121825

申请日：2018-09-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akio ITO ,  Kazuue FUJITA ,  Daisuke KAWAGUCHI ,  Tatsuo DOUGAKIUCHI ,  Tadataka EDAMURA

IPC: H01S5/34 ,  H01S5/22 ,  H01S5/028

CPC classification number: H01S5/3402 ,  H01S5/0201 ,  H01S5/021 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/028 ,  H01S5/0604 ,  H01S5/1096 ,  H01S5/12 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/2275 ,  H01S2301/176 ,  H01S2302/02

Abstract: A method of manufacturing a quantum cascade laser beam source (1) includes: preparing a semiconductor stacked body (20); forming a pair of first excavated portions (41 and 42) and a ridge portion which is interposed between the pair of first excavated portions (41 and 42); forming channel structures (51 and 52) and circumferential edge portions (61 and 62) which are formed to interpose the channel structures (51 and 52) between the ridge portion (30) and the circumferential edge portion; forming an electrode pattern (81) in contact with a first area (29a) and forming an electrode pattern (82) in contact with a second area (22a); fixing a crystal growth surface side to a support substrate (91); removing an Fe-doped (semi-insulating) InP single-crystal substrate (21); fixing a Si substrate (93); and peeling the support substrate (91).

公开(公告)号：US20170243994A1

公开(公告)日：2017-08-24

申请号：US15423836

申请日：2017-02-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuo DOUGAKIUCHI ,  Akio ITO ,  Tadataka EDAMURA ,  Kazuue FUJITA

IPC: H01L31/0352 ,  H01L31/0304 ,  H01L31/109 ,  H01L31/0216 ,  G01N21/3504 ,  H01L31/0232

CPC classification number: H01L31/035236 ,  G01N21/3504 ,  G01N2201/068 ,  G01N2201/0873 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/035281 ,  H01L31/109

Abstract: A quantum cascade detector includes a semiconductor substrate; an active layer having a cascade structure; a lower cladding layer provided between the active layer and the substrate and having a lower refractive index than the active layer; a lower metal layer provided between the lower cladding layer and the substrate; an upper cladding layer provided on an opposite side to the substrate with respect to the active layer and having a lower refractive index than the active layer; and an upper metal layer provided on an opposite side to the active layer with respect to the upper cladding layer. A first end face being in a waveguide direction in a waveguide structure with the active layer, lower cladding layer, and upper cladding layer is an entrance surface for light to be detected.

公开(公告)号：US20150123076A1

公开(公告)日：2015-05-07

申请号：US14525415

申请日：2014-10-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuue FUJITA ,  Toru HIROHATA ,  Tadataka EDAMURA ,  Tatsuo DOUGAKIUCHI

IPC: H01L31/0352

CPC classification number: H01L31/035236 ,  H01L31/06875 ,  H01L31/09 ,  H01L31/105

Abstract: A quantum cascade detector includes a semiconductor substrate, and an active layer formed by laminating unit laminate structures each having an absorption region with a first barrier layer to a second well layer and a transport region with a third barrier layer to an n-th well layer. A second absorption well layer has a layer thickness ½ or less of that of a first absorption well layer thickest in one period, and a coupling barrier layer has a layer thickness smaller than that of an exit barrier layer thickest in one period. The unit laminate structure has a detection lower level arising from a ground level in the first well layer, a detection upper level generated by coupling an excitation level in the first well layer and a ground level in the second well layer, and a transport level structure for electrons.

Abstract translation: 量子级联检测器包括半导体衬底和通过层叠单元层压结构形成的有源层，每个层叠结构具有带有第一阻挡层的吸收区域到第二阱层以及具有第三阻挡层到第n阱层的传输区域 。 第二吸收阱层具有在一个周期中最厚的第一吸收阱层的层厚度的1/2或更小，并且耦合阻挡层的层厚度小于在一个周期中最厚的出口阻挡层的层厚度。 单元层叠结构具有从第一阱层的地电平产生的检测下位电平，通过耦合第一阱层中的激发电平而产生的检测上限电平和第二阱层中的接地电平，以及传输电平结构 对于电子。

公开(公告)号：US20230092813A1

公开(公告)日：2023-03-23

申请号：US17945271

申请日：2022-09-15

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Tadataka EDAMURA

IPC: H01S5/14 ,  H01S5/02326 ,  H01S5/34

Abstract: The laser module includes a QCL element, a diffraction grating unit, a first lens holder, a second lens holder, and a mount member. The fourth mounting portion of the mount member is provided with a placement hole into which the protruding portion of the diffraction grating unit is inserted. The placement hole is longer than the protruding portion so that the protruding portion can be slid in the X-axis direction relative to the placement hole. A wall surface for positioning the diffraction grating unit is provided between the third mounting portion and the fourth mounting portion. The diffraction grating unit includes a positioning surface facing the wall surface. The diffraction grating unit is fixed to the fourth mounting portion in a state where the protruding portion is inserted into the placement hole and the positioning surface is in surface contact with the wall surface.