Abstract:
A memory device includes a group or block of k-level memory cells, where k>2, and where each of the k-level memory cells has k programmable states represented by respective resistance levels.
Abstract:
A system can include an optical multiplexer to combine a plurality of optical input signals having respective wavelengths into a wide-channel optical input signal that is provided to an input channel. The system also includes a photonic packet switch comprising a switch core and a plurality of ports defining a switch radix of the photonic packet switch. The input channel and an output channel can be associated with one of the plurality of ports. The photonic packet switch can process the wide-channel optical input signal and can generate a wide-channel optical output signal that is provided to the output channel. The system further includes an optical demultiplexer to separate the wide-channel optical output signal into a plurality of optical output signals having respective wavelengths. The optical multiplexer and the optical demultiplexer can collectively provide the system with a radix greater than the switch radix.
Abstract:
A non-volatile multi-level cell (“MLC”) memory device is disclosed. The memory device has an array of non-volatile memory cells, an array of non-volatile memory cells, with each non-volatile memory cell storing multiple groups of bits. A row buffer in the memory device has multiple buffer portions, each buffer portion storing one or more bits from the memory cells and having different read and write latencies and energies.
Abstract:
Example methods, systems, and apparatus to dynamically select between memory error detection and memory error correction are disclosed herein. An example system includes a buffer, to store a flag settable to a first value to indicate that a memory page is to store error protection information to detect but not correct errors in the memory page. The flag is settable to a second value to indicate that the error protection information is to detect and correct errors for the memory page. The example system includes a memory controller to receive a request based on the flag to enable error detection without correction for the memory page when the flag is set to the first value, and to enable error detection and correction for the memory page when the flag is set to the second value.
Abstract:
A detector detects, using an error code, an error in data stored in a memory. The detector determines whether the error is uncorrectable using the error code. In response to determining that the error is uncorrectable, an error handler associated with an application is invoked to handle the error in the data by recovering the data to an application-wide consistent state.
Abstract:
A method that includes evaluating, with a controller, local error detection (LED) information in response to a first memory access operation is disclosed. The LED information is evaluated per cache line segment of data associated with a rank of a memory. The method further includes determining an error in at least one of the cache line segments based on an error detection code and determining whether global error correction (GEC) data for a first cache line associated with the at least one cache line segment is stored in a GEC cache in the controller. The method also includes correcting the first cache line associated with the at least one cache line segment based on the GEC data retrieved from the GEC cache in the controller without accessing GEC data from a memory.
Abstract:
A memory device includes a group or block of k-level memory cells, where k>2, and where each of the k-level memory cells has k programmable states represented by respective resistance levels.
Abstract:
A system includes a memory controller, a buffer, a first channel to couple the memory controller to the buffer, and a second channel to couple the buffer to a memory. The first channel and second channel are to transmit a codeword including a plurality of symbols. A symbol is formed from a plurality of bursts based on data access of the memory. The memory controller is to identify a memory error based on a corrupted symbol pattern of the codeword. The memory controller is to discriminate between a chip failure, a first pin failure of the first channel, and a second pin failure of the second channel, as being a type of the memory error, according to the corrupted symbol pattern.