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11.发明授权公开(公告)号：US06335863B1
公开(公告)日：2002-01-01
申请号：US09228423
申请日：1999-01-12
IPC分类号： H05K720
CPC分类号： H01L23/49562 , H01L21/4871 , H01L23/142 , H01L23/3732 , H01L2924/0002 , H01L2924/1423 , H01L2924/00
摘要： A low-cost package for semiconductors that is superior in heat dissipation and capable of preventing the cracking of semiconductor elements at the time of mounting, and a semiconductor module employing the package. The package for semiconductors comprises a CVD diamond substrate 22 made of an independent diamond lamina, and a highly heat-conductive metallic member 21 bonded with the substrate. Semiconductor elements such as MMICs are mounted on an area 25 for mounting semiconductor elements. The CVD diamond substrate 22 may be replaced by a composite in which a CVD diamond layer is formed on a base material having thermal conductivity of 100 W/m·K or more. The provision of protuberances 26 of the metallic member 21 around the CVD diamond substrate 22 prevents the leakage of microwaves and millimeter waves.
摘要翻译： 一种半导体的低成本封装，其散热优良并且能够防止在安装时半导体元件的开裂，以及采用该封装的半导体模块。 用于半导体的封装包括由独立的金刚石薄片制成的CVD金刚石基底22和与基底结合的高导热金属部件21。 诸如MMIC的半导体元件安装在用于安装半导体元件的区域25上。 CVD金刚石基板22可以由在其导热率为100W / m·K以上的基材上形成CVD金刚石层的复合体代替。 在CVD金刚石基底22周围设置金属构件21的突起26防止微波和毫米波的泄漏。
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12.发明授权Method of and apparatus for producing single-crystalline diamond of large size 失效用于生产大尺寸单晶金刚石的方法和设备
公开(公告)号：US6096129A
公开(公告)日：2000-08-01
申请号：US60555
申请日：1998-04-15
CPC分类号： C30B25/02 , C30B25/00 , C30B25/105 , C30B29/04 , Y10S117/902 , Y10S117/913
摘要： An initial single-crystalline diamond base material is prepared from a flat plate having a major surface and side surfaces consisting of low-index planes. Then, single crystalline diamond is homoepitaxially vapor-deposited on the single-crystalline diamond base material, and a resulting diamond material is cut and polished in a particular manner to provide a successive base material on which single-crystalline diamond is again grown, thereby forming a single-crystalline diamond having a large area. A holder for the single-crystalline diamond base material consists of or is coated with a material hardly forming a compound with carbon. Single crystalline diamond can be stably formed on the surfaces of the base material. Consequently, single-crystalline diamond of high quality having a large area can be stably produced in a shorter time using either plasma CVD or a thermal filament method.
摘要翻译： 由具有主要表面和由低折射率平面组成的侧表面的平板制备初始单晶金刚石基材。 然后，将单晶金刚石同轴异质气相沉积在单晶金刚石基材上，并以特定的方式对所得金刚石材料进行切割和抛光，以提供连续的基材，再次生长单晶金刚石，从而形成 具有大面积的单晶金刚石。 用于单晶金刚石基材的保持器由几乎不与碳形成化合物的材料组成或涂覆。 可以在基材的表面上稳定地形成单晶金刚石。 因此，可以使用等离子体CVD或热丝法在更短的时间内稳定地制造具有大面积的高质量的单晶金刚石。
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13.发明授权公开(公告)号：US08155163B2
公开(公告)日：2012-04-10
申请号：US12531855
申请日：2008-01-29
申请人： Hirohisa Saito , Hideki Matsubara
发明人： Hirohisa Saito , Hideki Matsubara
IPC分类号： H01S5/00
CPC分类号： H01S5/18 , B82Y20/00 , H01L2224/48091 , H01L2224/48463 , H01S5/0206 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/105 , H01S5/2009 , H01S5/34333 , H01L2924/00014
摘要： A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion.
摘要翻译： 光子晶体激光器包括n型衬底，n型覆盖层，有源层，p型覆盖层，光子晶体层，p型电极，n型电极和封装构件。 n型覆盖层形成在n型衬底的第一表面上。 有源层形成在n型覆层上。 p型覆盖层形成在有源层上。 光子晶体层形成在n型覆盖层与有源层之间或者在有源层与p型覆盖层之间，并且包括光子晶体部分。 p型电极形成在光子晶体部分上。 n型电极形成在第二表面上，并且包括布置在与光子晶体部分相对的位置的透光部分和具有比透光部分低的透光率的外周部分。
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14.发明申请公开(公告)号：US20090313539A1
公开(公告)日：2009-12-17
申请号：US12478848
申请日：2009-06-05
申请人： Hiroshi OTA , Masaki Tasaka , Seiji Takahashi , Yuichiro Sakuta , Hirohisa Saito
发明人： Hiroshi OTA , Masaki Tasaka , Seiji Takahashi , Yuichiro Sakuta , Hirohisa Saito
IPC分类号： G06F17/24
CPC分类号： G06F17/218 , G06F17/24
摘要： An information processor includes a storage part configured to store multiple hierarchically correlated data elements; a metadata storage part configured to store the metadata of each of the data elements; an editing part configured to edit the metadata stored in the metadata storage part; and a reflection part configured to reflect the result of editing the metadata of one of the data elements by the editing part in the metadata of at least one of the remaining data elements.
摘要翻译： 信息处理器包括被配置为存储多个分层相关数据元素的存储部分; 元数据存储部件，被配置为存储每个数据元素的元数据; 配置为编辑存储在元数据存储部分中的元数据的编辑部分; 以及反射部，被配置为将所述编辑部中的所述数据元素之一的元数据的结果反映在所述剩余数据元素中的至少一个的元数据中。
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公开(公告)号：US07476909B2
公开(公告)日：2009-01-13
申请号：US11311638
申请日：2005-12-20
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/22 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/00011 , H01L2924/10155 , H01L2924/10253 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2924/01049 , H01L2924/01004 , H01L2924/01005
摘要： A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlxGa1-xN layer, a p-type AlxGa1-xN layer positioned further than the n-type AlxGa1-xN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 Ω·cm, the side of p-type AlxGa1-xN layer is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches formed therein.
摘要翻译： 获得具有简单结构的发光器件，其可以容易地制造，长时间稳定地获得高发光效率，该发光器件包括：GaN衬底作为氮化物半导体衬底，并且在第一主表面上 氮化物半导体衬底，n型Al x Ga 1-x N层，从氮化物半导体衬底观察的位于比n型Al x Ga 1-x N层更远的p型Al x Ga 1-x N层，以及位于n型Al x Ga 1-x N层之间的量子阱 -xN层和p型Al x Ga 1-x N层。 在发光器件中，氮化物半导体衬底的比电阻为0.5Ω·cm以下，p型Al x Ga 1-x N层的侧面朝下地安装，并且从第二主表面1a射出光 与氮化物半导体衬底的第一主表面相对。 氮化物半导体衬底的第二主表面1a具有形成在其中的沟槽。
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公开(公告)号：US06184611B2
公开(公告)日：2001-02-06
申请号：US09037514
申请日：1998-03-10
IPC分类号： H01J102
CPC分类号： H01J1/3042 , H01J2201/30457
摘要： An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.
摘要翻译： 电子发射元件包括金刚石衬底和在金刚石衬底的表面上生长的金刚石突起，以便具有能够发射电子的形式的尖端部分。 由于通过生长形成的金刚石突起具有尖锐的尖端部分，所以它可以完全发射电子。 优选地，金刚石基底的表面是{100}面，并且金刚石突起被{111}面包围。
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公开(公告)号：US5138466A
公开(公告)日：1992-08-11
申请号：US642201
申请日：1991-01-16
申请人： Hirohisa Saito
发明人： Hirohisa Saito
CPC分类号： H04N1/32797 , H04N1/32702 , H04Q11/0457 , H04Q2213/179 , H04Q2213/392
摘要： A facsimile apparatus processes a predetermined signal from a second external apparatus by means of correlating a first external apparatus with the second external apparatus if the facsimile apparatus is communicating with the first external apparatus when the second external apparatus transmits the predetermined signal to the facsimile apparatus. The signal is used for the operative connection between the facsimile apparatus and the second external apparatus. According to the present invention, the second external apparatus is prevented from frequently transmitting the predetermined signal to the facsimile apparatus. The present invention is applicable to a facsimile apparatus used for an integrated digital network.
摘要翻译： 如果传真设备正在与第一外部设备进行通信，则当第二外部设备向传真设备发送预定信号时，传真设备通过将第一外部设备与第二外部设备相关联来处理来自第二外部设备的预定信号。 该信号用于传真设备和第二外部设备之间的操作连接。 根据本发明，防止了第二外部装置频繁地将传送装置的预定信号发送。 本发明可应用于用于集成数字网络的传真设备。
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18.发明申请公开(公告)号：US20150104820A1
公开(公告)日：2015-04-16
申请号：US13990991
申请日：2011-12-02
IPC分类号： C12N5/0787 , G01N33/50
CPC分类号： C12N5/0642 , C12N5/0696 , C12N2501/125 , C12N2501/145 , C12N2501/165 , C12N2501/20 , C12N2501/22 , C12N2501/2303 , C12N2501/2305 , C12N2501/2306 , C12N2501/26 , C12N2502/02 , C12N2506/02 , C12N2506/45 , G01N33/5029 , G01N33/5047 , G01N33/505 , G01N2500/04 , G01N2500/10
摘要： The present invention relates to a method for producing human eosinophils from human pluripotent stem cells. More specifically, the present invention provides a method for producing human eosinophils from human pluripotent stem cells, which method comprises the steps of: (1) co-culturing, in the presence of VEGF, human pluripotent stem cells with cells separated from the AGM region of a mammalian fetus; (2) performing suspension culture using a medium comprising IL-3, IL-6, Flt3 ligand, SCF, TPO and serum; (3) performing suspension culture using a medium comprising IL-3, SCF, GM-CSF and serum; and, optionally, (4) performing suspension culture using a medium comprising IL-3, IL-5 and serum.
摘要翻译： 本发明涉及从人多能干细胞生产人嗜酸性粒细胞的方法。 更具体地说，本发明提供从人多能干细胞生产人嗜酸性粒细胞的方法，该方法包括以下步骤：（1）在VEGF的存在下，将人多能干细胞与从AGM区域分离的细胞共培养 的哺乳动物胎儿; （2）使用包含IL-3，IL-6，Flt3配体，SCF，TPO和血清的培养基进行悬浮培养; （3）使用包含IL-3，SCF，GM-CSF和血清的培养基进行悬浮培养; 和（4）使用包含IL-3，IL-5和血清的培养基进行悬浮培养。
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19.发明授权Automatically propagating changes in document access rights for subordinate document components to superordinate document components 有权自动传播下级文档组件的文档访问权限的更改，以将上级文档组件公开(公告)号：US08584009B2
公开(公告)日：2013-11-12
申请号：US12478848
申请日：2009-06-05
申请人： Hiroshi Ota , Masaki Tasaka , Seiji Takahashi , Yuichiro Sakuta , Hirohisa Saito
发明人： Hiroshi Ota , Masaki Tasaka , Seiji Takahashi , Yuichiro Sakuta , Hirohisa Saito
CPC分类号： G06F17/218 , G06F17/24
摘要： In one embodiment, components within different hierarchical document levels of a document have individual access rights and various hierarchical relationships with other components on different hierarchical levels within the document. Rules for automatically propagating changes in access rights for subordinate document components to superordinate document components are maintained. When an access right for a subordinate document component is changed, the change is automatically propagated to one or more superordinate document components, if permitted by the associated rules.
摘要翻译： 在一个实施例中，文档的不同分层文档级别内的组件具有与文档内的不同层级上的其他组件的单独的访问权限和各种分层关系。 自动传播将下属文档组件的访问权限更改维护到上级文档组件的规则。 当下属文档组件的访问权限更改时，如果相关规则允许，更改将自动传播到一个或多个上级文档组件。
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20.发明申请公开(公告)号：US20100103972A1
公开(公告)日：2010-04-29
申请号：US12531855
申请日：2008-01-29
申请人： Hirohisa Saito , Hideki Matsubara
发明人： Hirohisa Saito , Hideki Matsubara
CPC分类号： H01S5/18 , B82Y20/00 , H01L2224/48091 , H01L2224/48463 , H01S5/0206 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/105 , H01S5/2009 , H01S5/34333 , H01L2924/00014
摘要： A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion.
摘要翻译： 光子晶体激光器包括n型衬底，n型覆盖层，有源层，p型覆盖层，光子晶体层，p型电极，n型电极和封装构件。 n型覆盖层形成在n型衬底的第一表面上。 有源层形成在n型覆层上。 p型覆盖层形成在有源层上。 光子晶体层形成在n型覆盖层与有源层之间或者在有源层与p型覆盖层之间，并且包括光子晶体部分。 p型电极形成在光子晶体部分上。 n型电极形成在第二表面上，并且包括布置在与光子晶体部分相对的位置的透光部分和具有比透光部分低的透光率的外周部分。
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