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    Light-Emitting Diode and Semiconductor Light-Emitting Device
    1.
    发明申请
    Light-Emitting Diode and Semiconductor Light-Emitting Device 审中-公开
    发光二极管和半导体发光器件

    公开(公告)号：US20050110032A1

    公开(公告)日：2005-05-26

    申请号：US10904622

    申请日：2004-11-19

    申请人： Hirohisa Saito ,  Yoshiyuki Hirose ,  Youichi Nagai ,  Hiroyuki Kitabayashi ,  Ayako Ikeda

    发明人： Hirohisa Saito ,  Yoshiyuki Hirose ,  Youichi Nagai ,  Hiroyuki Kitabayashi ,  Ayako Ikeda

    IPC分类号： F21V8/00 ,  G02F1/1335 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/50 ,  H01L33/00

    CPC分类号： H01L33/505 ,  G02B6/0046 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： A light-emitting diode (1) is furnished with a semiconductor laminate (6), optically reflective layers (17) and (19), an optically reflective film (25), and a phosphorescent plate (27). The laminate (6) is formed by an n-type cladding layer (9), an active layer (11), a p-type cladding layer (13), and a p-type contact layer (15), laminated in order onto a substrate (7). The optically reflective layers (17) and (19) are provided respectively on the p-type contact layer (15) and on the back side (7b) of the substrate (7). The optically reflective film (25) is provided on three side surfaces of the laminate (6). The phosphorescent plate (27) is mounted on a side face, among the side faces of the laminate (6), on which there is no optically reflective film (25). Blue light (L1) output from the active layer (11) is reflected at each of the optically reflective layers, and is gathered on the side face on which the phosphorescent plate (27) is provided. A portion of the blue light (L1) turns into yellow light (2) in the phosphorescent plate (27), and white light derived from the blue light (L1) and yellow light (L2) is emitted.

    摘要翻译： 发光二极管（1）配备有半导体层叠体（6），光反射层（17）和（19），光反射膜（25）和磷光板（27）。 层叠体（6）由n型包覆层（9），有源层（11），p型覆盖层（13）和p型接触层（15）依次层叠而形成 衬底（7）。 光反射层（17）和（19）分别设置在基板（7）的p型接触层（15）和背面（7b）上。 光反射膜（25）设置在层叠体（6）的三个侧面上。 磷光板（27）安装在层叠体（6）的没有光反射膜（25）的侧面中的侧面上。 从有源层（11）输出的蓝光（L 1）在每个光反射层被反射，聚集在设置有磷光板（27）的侧面上。 蓝色光（L 1）的一部分在磷光板（27）中变成黄色光（2），发出蓝色光（L 1）和黄色光（L 2）衍生的白色光。

    Light emitting device
    2.
    发明申请
    Light emitting device 有权
    发光装置

    公开(公告)号：US20060157717A1

    公开(公告)日：2006-07-20

    申请号：US11311638

    申请日：2005-12-20

    申请人： Youichi Nagai ,  Hiroyuki Kitabayashi ,  Hirohisa Saito ,  Ayako Ikeda

    发明人： Youichi Nagai ,  Hiroyuki Kitabayashi ,  Hirohisa Saito ,  Ayako Ikeda

    IPC分类号： H01L33/00

    CPC分类号： H01L33/025 ,  H01L33/22 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00011 ,  H01L2924/10155 ,  H01L2924/10253 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/2076 ,  H01L2924/01049 ,  H01L2924/01004 ,  H01L2924/01005

    摘要： A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlxGa1-xN layer, a p-type AlxGa1-xN layer positioned further than the n-type AlxGa1-xN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 Ω·cm, the side of p-type AlxGa1-xN layer is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches formed therein.

    摘要翻译： 获得具有简单结构的发光器件，其可以容易地制造，长时间稳定地获得高发光效率，该发光器件包括：GaN衬底作为氮化物半导体衬底，并且在第一主表面上 氮化物半导体衬底，n型Al x Ga 1-x N层，p型Al x Ga 1-x N层， x N层比从氮化物半导体衬底观察到的n型Al x Ga 1-x N层更远，并且位于 n型Al x Ga 1-x N层和p型Al x Ga 1-x N层，以及p型Al x Ga 1-x N层， N层。 在发光器件中，氮化物半导体衬底的比电阻为0.5Ω·cm以下，p型Al x Ga 1-x N层的一侧为 并且从与氮化物半导体衬底的第一主表面相对的第二主表面1a发射光。 氮化物半导体衬底的第二主表面1a具有形成在其中的沟槽。

    Light emitting device
    3.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US07476909B2

    公开(公告)日：2009-01-13

    申请号：US11311638

    申请日：2005-12-20

    申请人： Youichi Nagai ,  Hiroyuki Kitabayashi ,  Hirohisa Saito ,  Ayako Ikeda

    发明人： Youichi Nagai ,  Hiroyuki Kitabayashi ,  Hirohisa Saito ,  Ayako Ikeda

    IPC分类号： H01L33/00

    CPC分类号： H01L33/025 ,  H01L33/22 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00011 ,  H01L2924/10155 ,  H01L2924/10253 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/2076 ,  H01L2924/01049 ,  H01L2924/01004 ,  H01L2924/01005

    摘要： A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlxGa1-xN layer, a p-type AlxGa1-xN layer positioned further than the n-type AlxGa1-xN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 Ω·cm, the side of p-type AlxGa1-xN layer is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches formed therein.

    摘要翻译： 获得具有简单结构的发光器件，其可以容易地制造，长时间稳定地获得高发光效率，该发光器件包括：GaN衬底作为氮化物半导体衬底，并且在第一主表面上 氮化物半导体衬底，n型Al x Ga 1-x N层，从氮化物半导体衬底观察的位于比n型Al x Ga 1-x N层更远的p型Al x Ga 1-x N层，以及位于n型Al x Ga 1-x N层之间的量子阱 -xN层和p型Al x Ga 1-x N层。 在发光器件中，氮化物半导体衬底的比电阻为0.5Ω·cm以下，p型Al x Ga 1-x N层的侧面朝下地安装，并且从第二主表面1a射出光 与氮化物半导体衬底的第一主表面相对。 氮化物半导体衬底的第二主表面1a具有形成在其中的沟槽。

    Semiconductor light emitting device
    10.
    发明申请
    Semiconductor light emitting device 审中-公开
    半导体发光器件

    公开(公告)号：US20050098801A1

    公开(公告)日：2005-05-12

    申请号：US10980258

    申请日：2004-11-04

    申请人： Ayako Ikeda ,  Youichi Nagai ,  Takao Nakamura

    发明人： Ayako Ikeda ,  Youichi Nagai ,  Takao Nakamura

    IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L27/10

    CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405

    摘要： A semiconductor light emitting device includes: a first conductivity type semiconductor layer made of nitride semiconductor; a second conductivity type semiconductor layer made of nitride semiconductor, the second conductivity type semiconductor layer being provided on the first conductivity type semiconductor layer; an active layer made of nitride semiconductor, the active layer being provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode provided on the second conductivity type semiconductor layer, the second electrode having a predetermined pattern; and a reflecting metal layer provided on the second conductivity type semiconductor layer and the second electrode.

    摘要翻译： 一种半导体发光器件包括：由氮化物半导体制成的第一导电型半导体层; 由氮化物半导体制成的第二导电型半导体层，所述第二导电类型半导体层设置在所述第一导电型半导体层上; 由氮化物半导体制成的有源层，所述有源层设置在所述第一导电类型半导体层和所述第二导电类型半导体层之间; 电连接到第一导电类型半导体层的第一电极; 设置在所述第二导电类型半导体层上的第二电极，所述第二电极具有预定图案; 以及设置在所述第二导电类型半导体层和所述第二电极上的反射金属层。