摘要:
A radiation-sensitive resin composition that provides a resist coating film in a liquid immersion lithography process is provided, the radiation-sensitive resin composition being capable of exhibiting a great dynamic contact angle during exposure, whereby the surface of the resist coating film can exhibit a superior water draining property, and the radiation-sensitive resin composition being capable of leading to a significant decrease in the dynamic contact angle during development, whereby generation of development defects can be inhibited, and further shortening of a time period required for change in a dynamic contact angle is enabled. A radiation-sensitive resin composition including (A) a fluorine-containing polymer having a structural unit (I) that includes a group represented by the following formula (1), and (B) a radiation-sensitive acid generator.
摘要:
A radiation-sensitive resin composition that provides a resist coating film in a liquid immersion lithography process is provided, the radiation-sensitive resin composition being capable of exhibiting a great dynamic contact angle during exposure, whereby the surface of the resist coating film can exhibit a superior water draining property, and the radiation-sensitive resin composition being capable of leading to a significant decrease in the dynamic contact angle during development, whereby generation of development defects can be inhibited, and further shortening of a time period required for change in a dynamic contact angle is enabled. A radiation-sensitive resin composition including (A) a fluorine-containing polymer having a structural unit (I) that includes a group represented by the following formula (1), and (B) a radiation-sensitive acid generator.
摘要:
A radiation-sensitive resin composition which has high transparency to radiation, excelling in basic properties as a resist such as sensitivity, resolution, and pattern shape, and, in particular, exhibiting high resolution performance, excellent DOF and LER, and high resistance to a liquid medium used in liquid immersion lithography is provided. Also provided are a polymer which can be used in the composition, a novel compound useful for synthesizing the polymer, and a method of producing the composition. A radiation-sensitive resin composition having an excellent resistance to a liquid medium can be obtained by using the novel compound shown by the following formula (1), wherein R1 represents a methyl group or a hydrogen atom, R2, R3 and R4 individually represent a substituted or unsubstituted monovalent organic group having 1 to 10 carbon atoms, n is an integer from 0 to 3, A represents a methylene group, a linear or branched alkylene group having 2 to 10 carbon atoms, or an arylene group, and X− represents a counter ion of S+.
摘要翻译:对辐射具有高透明度的辐射敏感性树脂组合物,作为抗敏剂如感光度,分辨率和图案形状的基本性能优异,特别是表现出高分辨率性能,优异的DOF和LER,以及对 提供了用于液浸光刻的液体介质。 还提供了可用于组合物中的聚合物,可用于合成聚合物的新化合物,以及该组合物的制备方法。 通过使用由下式(1)表示的新化合物,其中R 1表示甲基或氢原子,可以得到对液体介质具有优异抗性的辐射敏感性树脂组合物,R2,R3和R4分别表示 取代或未取代的碳原子数1〜10的一价有机基团,n表示0〜3的整数,A表示亚甲基,碳原子数2〜10的直链或支链亚烷基或亚芳基,X表示 S +的反离子。
摘要:
A positive-tone radiation-sensitive resin composition comprising: (A) a carbazole derivative shown by the following formula (1), (B) a photoacid generator containing a sulfonimide compound and an iodonium salt compound as essential components, and (C) an acid-dissociable group-containing resin which is insoluble or scarcely soluble in alkali, but becomes soluble in alkali when the acid-dissociable group dissociates is disclosed. wherein R1 and R2 are individually halogen atom, methyl, cyano, or nitro group, X is a C1-20 organic group, and h and i are 0-4. The resin composition is useful as a chemically amplified positive-tone resist excelling in focal depth allowance, sensitivity, resolution, pattern profile, and PED stability.
摘要:
A positive-tone radiation-sensitive resin composition comprising: (A) a carbazole derivative shown by the following formula (1), (B) a photoacid generator containing a sulfonimide compound and an iodonium salt compound as essential components, and (C) an acid-dissociable group-containing resin which is insoluble or scarcely soluble in alkali, but becomes soluble in alkali when the acid-dissociable group dissociates is disclosed. wherein R1 and R2 are individually halogen atom, methyl, cyano, or nitro group, X is a C1-20 organic group, and h and i are 0-4. The resin composition is useful as a chemically amplified positive-tone resist excelling in focal depth allowance, sensitivity, resolution, pattern profile, and PED stability.
摘要:
A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a (A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.
摘要翻译:提供了抗蚀剂下层膜用组合物。 该组合物具有优异的储存稳定性,并且可以形成对抗蚀剂膜具有优异粘附性的抗蚀剂下层膜,可以提高抗蚀剂图案的再现性,并且耐除去抗蚀剂期间用于显影的碱性液体和氧气灰化。 该组合物包含下式(A)的硅烷化合物的水解产物和/或缩合物,其中R1是具有至少一个不饱和键的一价有机基团的R 1 b R 2 c Si(OR 3)4-a(A),R 2各自表示 氢原子,卤原子或一价有机基团,R 3分别表示一价有机基团,R 1为除OR 3以外的基团,a为1〜3的整数,b为1〜3的整数,c为 0〜2的整数,条件是a = b + c。
摘要:
A resist pattern formation method includes providing a first positive-tone radiation-sensitive resin composition on a substrate to form a first resist layer. The first resist layer is selectively exposed and developed to form a first resist pattern. The first resist pattern is coated with a resist pattern insolubilizing resin composition which comprises a resin and an alcohol solvent, the resin having a hydroxyl group. The resist pattern insolubilizing resin composition is baked or cured with UV to insolubilize the first resist pattern in a developer and in a second positive-tone radiation-sensitive resin composition. The resist pattern insolubilizing resin composition is developed to form an insolubilized resist pattern. The second positive-tone radiation-sensitive resin composition is provided on the insolubilized resist pattern to form a second resist layer. The second resist layer is selectively exposed and developed to form a second resist pattern.
摘要:
A positive-tone radiation-sensitive resin composition containing an anthracene-based carboxylic acid component with low sublimation properties and excellent compatibility with other components is provided. The composition exhibits optimum controllability of radiation transmittance as a chemically amplified positive-tone resist effectively responding to active radiation, particularly to deep ultraviolet rays, effectively controlling line width variation in resist patterns due to fluctuation in the resist film thickness on a highly refractive substrate, and exhibiting excellent focal depth allowance.The composition comprises (A) an anthracene derivative of the following formula (1), (B) a photoacid generator comprising a sulfonimide compound, and, (C) a resin containing an acid-dissociable group, wherein R1 is a hydrogen atom or a monovalent organic group, R2 is a monovalent organic group, e is an integer of 0-3, and f is an integer of 0-8. The metal impurity content in the component (A), in terms of the total ion content, is preferably 5,000 ppb or less.
摘要:
1. A copolymer having recurring units of the following formulas (1), (2), and (3), wherein R1, R4, R5, and R6 are a hydrogen atom or a methyl group, R2, R3, and R7 represent a monovalent organic group, k is 1 or 2, 1 is 0–4, n is 1–3, m is 0–3, R8 is a substituted methyl group, 1-substituted ethyl group, 1-branched alkyl group, triorganosilyl group, triorganogermyl group, alkoxycarbonyl group, acyl group, or cyclic acid-dissociable group, with two or more R8 groups being the same or different, q is 1–3, and p is 0–3, the copolymer having a GPC average molecular weight of 3,000–100,000. The composition is useful as a polymer component for a radiation-sensitive resin composition suitable as a chemically-amplified resist.
摘要:
A positive tone radiation-sensitive resin composition comprising (A) a 1-substituted imidazole, (B) a photoacid generator, and (C-a) a resin protected by an acid-dissociable group, insoluble or scarcely soluble in alkali, but becoming soluble in alkali when the acid-dissociable group dissociates or (C-b) an alkali-soluble resin and an alkali solubility controller, and a negative tone radiation-sensitive resin composition comprising (A), (B), (D) an alkali-soluble resin, and (E) a compound that can crosslink the alkali-soluble resin in the presence of an acid. The radiation-sensitive resin composition of the present invention is a chemically amplified resist exhibiting high resolution and high storage stability as a composition, and suitable for microfabrication sensible to active radiations, for example, ultraviolet rays such as g-lines and i-lines, deep ultraviolet rays represented by a KrF excimer laser, ArF excimer laser, F2 excimer laser, and EUV excimer laser, and electron beams.