公开(公告)号：US06647042B2

公开(公告)日：2003-11-11

申请号：US10109721

申请日：2002-04-01

申请人： Mamoru Miyachi ,  Hiroyuki Ota

发明人： Mamoru Miyachi ,  Hiroyuki Ota

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/0216 ,  H01S5/0218

摘要： A group-III nitride semiconductor laser device with excellent optical characteristics and its manufacturing method are provided. The method does not include steps that require high assembly precision. The group-III nitride semiconductor laser device comprises a substrate which has a cut-out portion. A laser facet of a multi-layer body is located near the cut-out portion of the substrate.

公开(公告)号：US06628599B2

公开(公告)日：2003-09-30

申请号：US09739646

申请日：2000-12-20

申请人： Takanori Maeda ,  Hiroyuki Ota

发明人： Takanori Maeda ,  Hiroyuki Ota

IPC分类号： G11B700

CPC分类号： G11B7/1353 ,  G02B5/1828

摘要： An information recording/reproducing apparatus of the invention is equipped with an objective lens, a light source and a variable optical element having a grating which demonstrates a piezo-electric effect by means of an electric field. The light source emits and irradiates a laser beam onto the grating to generate a 0th order diffraction beam and +/− 1st order diffraction beams in accordance with first order diffraction efficiency, and the objective lens converges the 0th diffraction beam and +/− 1st order diffraction beams which are irradiated onto an information recording medium for the purpose of information recording or information reproducing. By controlling an electric field applied to the grating, the first order diffraction efficiency of the grating is adjusted, whereby light beams are generated which have power levels appropriate for various kinds of information recording media.

摘要翻译： 本发明的信息记录/再现装置配有物镜，光源和具有通过电场显示压电效应的光栅的可变光学元件。 光源发射并将光束照射到光栅上，以根据一阶衍射效率产生第0级衍射光束和+/- 1级衍射光束，并且物镜会聚第0衍射光束和+/- 1阶 用于信息记录或信息再现的辐射到信息记录介质上的衍射光束。 通过控制施加到光栅的电场，调整光栅的一阶衍射效率，从而产生具有适用于各种信息记录介质的功率电平的光束。

公开(公告)号：US06609824B1

公开(公告)日：2003-08-26

申请号：US09597690

申请日：2000-06-19

申请人： Tetsuya Sato ,  Hiroyuki Ota

发明人： Tetsuya Sato ,  Hiroyuki Ota

IPC分类号： G01J500

CPC分类号： G01J5/02 ,  G01J5/026 ,  G01J5/16 ,  G01J2005/068

摘要： A radiation thermometer capable of precise measurement without depending upon an absolute precision of an infrared ray sensor for detecting infrared ray or a temperature sensor for measuring a temperature of the infrared ray sensor is provided wherein, controlling means retains a reference temperature for the measurement object, a sensor reference temperature for the sensor, and a sensor reference output for the sensor output when infrared ray radiated from the object of measurement having the object of measurement reference temperature is detected by the infrared ray sensor having the sensor reference temperature, and calculates the temperature of measurement object based on a first difference as a difference between a sensor temperature to be measured by the sensor temperature measuring portion and a sensor reference temperature, a second difference as a difference between a sensor output to be detected by the infrared ray sensor and a sensor reference output and the object of measurement reference temperature.

摘要翻译： 提供一种能够精确测量的辐射温度计，其不依赖于用于检测红外线的红外线传感器的绝对精度或用于测量红外线传感器的温度的温度传感器，其中控制装置保持测量对象的参考温度， 传感器的传感器参考温度，以及当具有测量基准温度对象的测量对象辐射红外线时，传感器输出的传感器基准输出由具有传感器参考温度的红外线传感器检测，并计算温度 基于作为由传感器温度测量部测量的传感器温度与传感器参考温度之间的差的第一差异的测量对象的第二差值作为由红外线传感器检测的传感器输出与 传感器参考输出和测量对象 参考温度。

公开(公告)号：US06335218B1

公开(公告)日：2002-01-01

申请号：US09565025

申请日：2000-05-05

申请人： Hiroyuki Ota ,  Mamoru Miyachi ,  Yoshinori Kimura

发明人： Hiroyuki Ota ,  Mamoru Miyachi ,  Yoshinori Kimura

IPC分类号： H01L2100

CPC分类号： H01L33/325 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/32 ,  H01S5/32341

摘要： A group III nitride semiconductor device producing method is constructed by: a step of forming a first crystal layer made of a group III nitride semiconductor (AlxGa1−x)1−y.InyN (0≦×≦1, 0≦y≦1) doped with a group II impurity element; a step of a second crystal layer made of a group III nitride semiconductor AlzGa1−zN (0.7≦z≦1) onto the first crystal layer; and a step of removing at least a part of the second crystal layer by etching after the formation of the first and second crystal layers.

摘要翻译： III族氮化物半导体器件的制造方法是通过以下步骤构成的：形成由III族氮化物半导体（Al x Ga 1-x）1-y.InyN（0≤x≤1,0

公开(公告)号：US06329667B1

公开(公告)日：2001-12-11

申请号：US09497695

申请日：2000-02-08

申请人： Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

发明人： Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

IPC分类号： H01L2906

CPC分类号： H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/10 ,  H01S5/2081 ,  H01S5/32341

摘要： A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.

摘要翻译： 即使致密的穿透位错延伸穿过单晶层，也具有优选的发光特性的氮化物半导体发光器件。 氮化物半导体发光器件包括通过沉积III族氮化物半导体获得的有源层和与有源层相邻设置并且具有比有源层更大的带隙的势垒层，所述有源层具有包围所述有源层的势垒部分 穿透位错并且由包围穿透位错的界面限定，并且由与阻挡层相同的材料制成。

公开(公告)号：US06259122B1

公开(公告)日：2001-07-10

申请号：US09368535

申请日：1999-08-04

申请人： Hiroyuki Ota ,  Toshiyuki Tanaka ,  Atsushi Watanabe

发明人： Hiroyuki Ota ,  Toshiyuki Tanaka ,  Atsushi Watanabe

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01S5/32341

摘要： In a semiconductor light-emitting device having a multilayered structure which consists essentially of layers of Group III nitride semiconductors (AlxGa1−x) 1−yInyN (0≦x≦1, 0≦y≦1) which are different from each other in chemical composition ratio, generation of cracks at an interface propagating from an interface between adjacent layers is prevented. Two adjacent layers within the multilayered structure, which include a lower layer having a lattice constant larger than a lattice constant of an upper layer of the two adjacent layers, have a portion close to the interface of the two adjacent layers doped such that an element different from the Group III nitride semiconductors is added in a higher concentration, i.e. in a higher distribution density than in other portions thereof.

摘要翻译： 在具有多层结构的半导体发光器件中，其基本上由III族氮化物半导体（Al x Ga 1-x）1-y In y N（0 <= x <= 1,0 <= y <= 1） 彼此之间的化学组成比，防止了从相邻层之间的界面传播的界面产生裂纹。 多层结构中的两个相邻层，其包括具有大于两个相邻层的上层的晶格常数的晶格常数的下层，具有靠近所述两个相邻层的界面的部分，所述界面被掺杂，使得元件不同 从III族氮化物半导体中加入更高的浓度，即比其它部分更高的分布密度。

公开(公告)号：US5659491A

公开(公告)日：1997-08-19

申请号：US355975

申请日：1994-12-14

申请人： Fusao Ichikawa ,  Ryo Mori ,  Hiroyuki Ota

发明人： Fusao Ichikawa ,  Ryo Mori ,  Hiroyuki Ota

IPC分类号： B07C5/344 ,  G03B15/05 ,  G03B19/04 ,  G03B43/00 ,  H05B41/32 ,  G05B19/418

CPC分类号： H05B41/325 ,  B07C5/344 ,  G03B15/05 ,  G03B19/04 ,  G03B43/00 ,  G03B2215/0503 ,  G03B2219/045

摘要： An inspection system for assemblies, especially for flash units of used film packages as to if the flash units are reusable. The inspection system circulates pallets each holding a flash unit in a predetermined posture around a plurality of inspection stations for various inspection items. Inspection data detected in each inspection station is written in a memory of the pallet through a data communication system disposed in each pallet and each inspection station. A computer reads the memory for classifying the flash unit on the basis of the inspection data on all inspection items and writes classification data in the memory. A plurality of electrical inspection apparatuses are disposed in the inspection system for simultaneously inspecting electrical properties of a plurality of flash units. Each inspection apparatus has proving pins, an actuator and a photo-sensor which are moved into their operative positions when the pallet holding the flash unit is stopped at the inspection apparatus, wherein the inspection apparatus charges a main capacitor with a high D.C. voltage while measuring the voltage of the main capacitor.

摘要翻译： 用于组件的检查系统，特别是用于使用胶片包装的闪光单元，如果闪光灯组件是可重复使用的。 检查系统将托盘中的每个保持闪光单元的托板循环在用于各种检查项目的多个检查站周围。 在每个检查站中检测到的检查数据通过设置在每个托盘和每个检查站中的数据通信系统写入托盘的存储器中。 计算机根据所有检查项目的检查数据读取闪存单元的分类存储器，并将分类数据写入存储器。 多个电气检查装置设置在检查系统中，用于同时检查多个闪光单元的电气特性。 每个检查装置具有检测销，致动器和光传感器，当保持闪光单元的托盘停在检查装置时，其移动到其操作位置，其中检查装置对具有高DC电压的主电容器充电，同时测量 主电容的电压。

公开(公告)号：US5496589A

公开(公告)日：1996-03-05

申请号：US215722

申请日：1994-03-22

申请人： Ichiro Igarashi ,  Hiroyuki Ota ,  Yoshio Mizoguchi

发明人： Ichiro Igarashi ,  Hiroyuki Ota ,  Yoshio Mizoguchi

IPC分类号： B27K3/36 ,  B27K5/06 ,  C08F20/28 ,  C08G65/332 ,  C09D4/06 ,  C09D133/14 ,  B05D3/00

CPC分类号： B27K3/15 ,  C08F20/28 ,  C08G65/3324 ,  C09D133/14 ,  C09D4/06

摘要： A curing composition and a method for impregnating wood using the curing composition, which comprises a reaction product represented by formula (1) obtained by reacting an alkylene oxide adduct of a hydrocarbon polyol and (meth)acrylic acid: ##STR1## wherein R.sup.10 represents a residual group of a hydrocarbon polyol having from 3 to 15 carbon atoms and (c1+d1) hydroxyl groups; R.sup.11 represents an alkylene group having from 2 to 4 carbon atoms; R.sup.12 represents an alkylene group having from 2 to 4 carbon atoms; R.sup.13 represents a hydrogen atom or a methyl group; a1 represents a number of from 0 to 10; b1 represents a number of from 0 to 10; c1 represents a number of not less than 1.5; and d1 represents a number of not less than 0.5; provided that (a1+b1) is not less than 1.

摘要翻译： 固化组合物和使用该固化组合物浸渍木材的方法，其包括通过使烃多元醇的烯化氧加合物与（甲基）丙烯酸反应获得的式（1）表示的反应产物：其中 R 10表示碳原子数3〜15的烃多元醇和（c1 + d1）羟基的残基， R11表示碳原子数2〜4的亚烷基。 R 12表示碳原子数2〜4的亚烷基。 R 13表示氢原子或甲基; a1表示0〜10的数; b1表示0〜10的数; c1表示不小于1.5的数; d1表示不小于0.5的数; （a1 + b1）不小于1。

公开(公告)号：US5382334A

公开(公告)日：1995-01-17

申请号：US138214

申请日：1993-10-20

申请人： Satoshi Miyaguchi ,  Atsushi Onoe ,  Hiroyuki Ota

发明人： Satoshi Miyaguchi ,  Atsushi Onoe ,  Hiroyuki Ota

IPC分类号： G02F1/37 ,  G02F1/355 ,  H01L21/00

CPC分类号： G02F1/3558 ,  Y10T29/42

摘要： Disclosed is a process for forming a polarization inversion layer which can form a periodic metal pattern on one major surface of a substrate and can easily form a fine periodic domain inversion structure. According to this process for forming polarization inversion layer, before or after the step of forming a three-dimensional waveguide, plural pairs of ground anodes and voltage-applying cathodes are formed at predetermined intervals, each pair sandwiching the three-dimensional waveguide along the extending direction thereof, facing each other, and set apart from each other, on one major surface of the substrate parallel to an axial direction where polarization inversion easily occurs, an electron beam is irradiated to the cathodes with the anodes grounded to thereby form a plurality of polarization inversion layers along the extending direction of the three-dimensional waveguide.

摘要翻译： 公开了一种用于形成极化反转层的方法，其可以在衬底的一个主表面上形成周期性金属图案，并且可以容易地形成精细的周期性畴反转结构。 根据用于形成极化反转层的方法，在形成三维波导的步骤之前或之后，以预定的间隔形成多对接地阳极和施加电压的阴极，每对将沿着延伸的三维波导夹着三维波导 方向彼此面对，并且彼此分离，在平行于极化反转容易发生的轴向的基板的一个主表面上，电子束照射到阴极，阳极接地，从而形成多个 沿着三维波导的延伸方向的极化反转层。

公开(公告)号：US5337399A

公开(公告)日：1994-08-09

申请号：US800122

申请日：1991-11-29

申请人： Hiroyuki Ota ,  Kiyofumi Chikuma

发明人： Hiroyuki Ota ,  Kiyofumi Chikuma

IPC分类号： G02B6/12 ,  G02B6/42 ,  G02F1/35 ,  G02F1/355 ,  G02F1/37 ,  H01S3/109 ,  H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/227 ,  G02B6/02 ,  H03F7/00

CPC分类号： H01S5/0604 ,  G02B6/12004 ,  G02B6/42 ,  G02F1/377 ,  G02B2006/12064 ,  G02B2006/12078 ,  G02B2006/12121 ,  G02B2006/12147 ,  H01S5/028 ,  H01S5/1032 ,  H01S5/2004 ,  H01S5/2275

摘要： A wavelength conversion element comprises a laser oscillation portion provided with an active layer waveguide formed of a material of III-V group in a periodic table and an output waveguide path portion provided with an output waveguide. The output waveguide path portion is further provided with a buffer layer between the output waveguide and the active layer waveguide having a thickness suitable for propagation of an evanecsent wave from the active layer waveguide to the output waveguide. In result, a wavelength conversion efficiency of a second harmonic can be remarkably improved, and a process of manufacturing the wavelength conversion element becomes more easy.

摘要翻译： 波长转换元件包括设置有由周期表中的III-V族材料形成的有源层波导的激光振荡部分和设置有输出波导的输出波导路径部分。 输出波导路径部分还在输出波导和有源层波导之间设置缓冲层，该缓冲层具有适于将传播波从有源层波导传播到输出波导的厚度。 结果，可以显着提高二次谐波的波长转换效率，并且使波长转换元件的制造过程变得更加容易。