公开(公告)号：US20130108400A1

公开(公告)日：2013-05-02

申请号：US13633155

申请日：2012-10-02

Applicant: Hitachi High-Technologies Corporation

Inventor： Keita NOGI ,  Teruo NAKATA ,  Yoshiro SUEMITSU ,  Michinori KAWAGUCHI ,  Satomi INOUE

IPC: H01L21/677

CPC classification number: H01L21/67276

Abstract: Transportation control in a vacuum processing device with high transportation efficiency without lowering throughput is provided. A control unit is configured to update in real time and holds device state information showing an action state of each of a process chamber, a transportation mechanism unit, a buffer room, and a holding mechanism unit, the presence of a process subject member, and a process state thereof; select a transport algorithm from among transport algorithm judgment rules that are obtained by simulating in advance a plurality of transport algorithms for controlling transportation of a process subject member for each condition of a combination of the number and arrangement of the process chambers and process time of a process subject member based on the device state information and process time of the process subject member; and compute a transport destination of the process subject member based on the selected transport algorithm.

Abstract translation: 提供了具有高运输效率而不降低生产量的真空处理装置中的运输控制。 控制单元被配置为实时更新并保持表示处理室，运送机构单元，缓冲室和保持机构单元的动作状态的装置状态信息，处理对象构件的存在和 其处理状态; 从传输算法判断规则中选择一种传输算法，该传输算法判断规则是通过预先模拟用于控制处理室的数量和布置的组合的每个条件的处理对象构件的传送的多个传输算法而获得的，以及处理室的处理时间 基于过程主体的设备状态信息和处理时间处理主题成员; 并基于所选择的传输算法计算过程主体成员的传输目的地。

公开(公告)号：US20180277377A1

公开(公告)日：2018-09-27

申请号：US15714181

申请日：2017-09-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Soichiro ETO ,  Takeshi OHMORI ,  Tatehito USUI ,  Satomi INOUE

IPC: H01L21/3065 ,  H01L21/02 ,  H01J37/32

Abstract: A plasma processing apparatus processes a film layer to be processed disposed in advance on a surface of a wafer by using a plasma being switched on and off in a processing chamber in predetermined cycles and periods and includes a detection control unit for detecting a processing amount of the film layer on the surface of the wafer. The detection control unit includes a light source unit, a detection unit, and a film thickness/depth calculation unit. This detection control unit detects a plurality of times an amount indicating the intensity of light on a sample surface at predetermined cycles during a period in which the plasma is switched off while the wafer is being processed and detects a processing amount of the film layer on the sample surface by using the detected amount indicating the light intensity.

公开(公告)号：US20180025894A1

公开(公告)日：2018-01-25

申请号：US15445203

申请日：2017-02-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: H01J37/32 ,  G01J3/28

Abstract: According to the present invention, a plasma processing apparatus includes an analysis unit that obtains wavelengths of the light correlated with a plasma processing result, selects, from the obtained wavelengths, a wavelength having a first factor that represents a deviation in an intensity distribution of the light and is larger than a first predetermined value, and predicts the plasma processing result using the selected wavelength, or an analysis unit that obtains values computed using each of light intensities of a plurality of wavelengths and correlated with the plasma processing result, selects, from the obtained values, a value having a second factor that represents a deviation in a distribution of the obtained values and is larger than a second predetermined value, and predicts the plasma processing result using the selected value.

公开(公告)号：US20170358504A1

公开(公告)日：2017-12-14

申请号：US15673151

申请日：2017-08-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67

CPC classification number: H01L22/20 ,  H01J37/32926 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and a real pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.

公开(公告)号：US20140277626A1

公开(公告)日：2014-09-18

申请号：US14289773

申请日：2014-05-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Shoji IKUHARA ,  Toshihiro MORISAWA

IPC: H01J37/32

CPC classification number: H01J37/32926 ,  G05B13/048 ,  G05B2219/31357 ,  H01J37/32935

Abstract: A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes.

Abstract translation: 一种等离子体处理装置，包括：监视器，其监视在等离子体处理时产生的处理量; 监视值估计单元，其具有监视量变化模型，用于根据处理样本的数量存储处理量的监视值的变化，并且通过参考监视量变化估计下一个样本的处理的监视值 楷模; 以及控制量计算单元，其存储用于控制真空处理装置的处理量的控制量与监视值之间的关系，并且基于估计监视值与目标值的偏差来计算控制量，从而控制 下一个试样的加工量。 因此，表示处理处理装置的状态的变化的处理模型可以在这样的运行控制中被添加到控制循环中，即，根据每个晶片处理改变处理条件，从而甚至可以获得稳定的处理结果 当过程发生变化时。

公开(公告)号：US20130274908A1

公开(公告)日：2013-10-17

申请号：US13859812

申请日：2013-04-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Teruo NAKATA ,  Keita NOGI ,  Satomi INOUE

IPC: G05B15/02

CPC classification number: G05B15/02 ,  G05B19/41865 ,  G05B2219/32328 ,  G05B2219/45031 ,  Y02P90/083 ,  Y02P90/18 ,  Y02P90/20 ,  Y02P90/26 ,  Y02P90/265 ,  Y02P90/28

Abstract: Provided is a method that may quickly and simply select the allocation of the type of wafers to the processing chamber having a higher productivity in a semiconductor processing device in which a plurality of conveyance robots is disposed in a conveyance mechanism to which a processing chamber is connected and an object to be processed is delivered between the plurality of conveyance robots, when processings are performed on a plurality of types of wafers in parallel. From the information on the arrangement of the processing chambers of the semiconductor processing device and input type of wafers to be processed, the processing chamber allocation candidate is comprehensively generated and a simulation that manufactures all processing targets for each of the processing chamber allocation candidates is performed to calculate a productivity and the candidates are displayed in the order from a higher productivity to support the adoption of a user.

Abstract translation: 提供了一种方法，其可以在半导体处理装置中快速简单地选择对具有较高生产率的处理室的类型的分配，其中多个输送机器人设置在处理室被连接到的输送机构中 并且当在多个类型的晶片上并行执行处理时，在多个输送机器人之间传送被处理物体。 根据关于半导体处理装置的处理室的布置的信息和要处理的晶片的输入类型，综合地生成处理室分配候选，并且执行为处理室分配候选中的每一个生成所有处理目标的模拟 计算生产率，候选人按照更高的生产率显示顺序，以支持用户的采用。

公开(公告)号：US20200294777A1

公开(公告)日：2020-09-17

申请号：US16084095

申请日：2018-03-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kosa HIROTA ,  Masahiro SUMIYA ,  Koichi NAKAUNE ,  Nanako TAMARI ,  Satomi INOUE ,  Shigeru NAKAMOTO

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66

Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate.According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.

公开(公告)号：US20170372878A1

公开(公告)日：2017-12-28

申请号：US15677260

申请日：2017-08-15

Applicant: Hitachi High-Technologies Corporation

Inventor： Masahito TOGAMI ,  Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO

IPC: H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32458 ,  H01J37/32908 ,  H01J37/32963 ,  H01J37/3299 ,  H01J2237/0266 ,  H01J2237/2445 ,  H01J2237/3341

Abstract: A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.

公开(公告)号：US20170178874A1

公开(公告)日：2017-06-22

申请号：US15277272

申请日：2016-09-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Yohei KAWAGUCHI ,  Tatehito USUI ,  Masahito TOGAMI ,  Satomi INOUE ,  Shigeru NAKAMOTO

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  G01N21/84 ,  G01B11/06

CPC classification number: H01J37/32972 ,  G01B11/0616 ,  G01N21/84 ,  H01J37/32715 ,  H01J37/32834 ,  H01J37/32935 ,  H01J37/32963 ,  H01J2237/334 ,  H01L21/3065 ,  H01L22/26

Abstract: A plasma processing device performing etching processing to a sample disposed in a processing chamber disposed in a vacuum vessel by using plasma formed in the processing chamber includes a light detector, a component detector, and a determination unit. The light detector detects light intensity of a plurality of wavelengths from the inside of the processing chamber at a plurality of times during the sample processing. The component detector detects, by using a result of a principal component analysis of time-series data, a highly correlated component between the time-series data of a plurality of the wavelengths at a certain time in a plurality of the times obtained from output of the light detector. The determination unit determines an amount or an end point of the etching processing based on a change in light intensity of at least one of a plurality of the wavelengths detected by using the time-series data from which the highly correlated component is removed.

公开(公告)号：US20160351405A1

公开(公告)日：2016-12-01

申请号：US15060822

申请日：2016-03-04

Applicant: Hitachi High-Technologies Corporation

Inventor： Kousuke FUKUCHI ,  Shigeru NAKAMOTO ,  Tatehito USUI ,  Satomi INOUE

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/3081 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method includes forming plasma in a processing chamber; and performing etching to a film to be processed of a film structure that has previously been disposed on an upper surface of a wafer that includes a plurality of film layers. The film structure includes: a lower film including at least one film layer and a groove structure; and an upper film including at least one film layer that covers an inside and an upper end of the groove structure. The plasma processing method includes: removing the upper film by etching until an upper end of the groove structure of the lower film is exposed; performing etching to a film layer of the upper film inside the groove structure; and determining an end point by using a value of thickness of the film layer inside the groove structure of the lower film upon completion of the removing.

Abstract translation: 等离子体处理方法包括在处理室中形成等离子体; 并对预先设置在包括多个膜层的晶片的上表面上的膜结构进行处理的膜进行蚀刻。 膜结构包括：下膜，其包括至少一个膜层和凹槽结构; 以及包括至少一个覆盖所述凹槽结构的内侧和上端的薄膜层的上部薄膜。 等离子体处理方法包括：通过蚀刻去除上部膜，直到下部膜的槽结构的上端露出; 对槽结构内的上膜的膜层进行蚀刻; 并且通过在完成去除时使用下膜的沟槽结构内的膜层的厚度值来确定终点。