Patent search ap:("IBM") AND inv:"MARINACE JOHN C" Page 2

11.

发明授权
Method of forming an integral masking fixture by epitaxial growth 失效
Title translation: 通过外延生长形成整体遮蔽夹具的方法

公开(公告)号：US3234058A

公开(公告)日：1966-02-08

申请号：US20572562

申请日：1962-06-27

Applicant: IBM

Inventor： MARINACE JOHN C

IPC: H01L21/00 , H01L21/18 , H01L21/205 , H01L21/24 , H01L21/3065 , H01L29/00 , H01L29/06 , H01L29/88

CPC classification number: H01L29/06 , H01L21/00 , H01L21/02546 , H01L21/0262 , H01L21/18 , H01L21/24 , H01L21/3065 , H01L29/00 , H01L29/88 , Y10S148/026 , Y10S438/933 , Y10S438/979

12.

发明授权
Quantum mechanical tunneling semiconductor device 失效
Title translation: 量子力学隧道半导体器件

公开(公告)号：US3215908A

公开(公告)日：1965-11-02

申请号：US11912761

申请日：1961-06-23

Applicant: IBM

Inventor： MARINACE JOHN C , RUTZ RICHARD F

IPC: H01L21/00 , H01L21/24 , H01L29/00 , H01L29/167 , H01L29/36 , H01L29/88

CPC classification number: H01L29/36 , H01L21/00 , H01L21/24 , H01L29/00 , H01L29/167 , H01L29/88

13.

发明授权
Particular masking configuration in a vapor deposition process 失效
Title translation: 气相沉积工艺中特殊的掩模配置

公开(公告)号：US3171761A

公开(公告)日：1965-03-02

申请号：US14332261

申请日：1961-10-06

Applicant: IBM

Inventor： MARINACE JOHN C

IPC: C23C16/04 , H01L21/00 , H01L29/00

CPC classification number: C30B25/04 , C23C16/042 , H01L21/00 , H01L29/00 , Y10S148/026 , Y10S148/085 , Y10S438/944

14.

发明授权
Luminescent germanium dioxide compositions 失效
Title translation: 发光二氧化锗组合物

公开(公告)号：US3154502A

公开(公告)日：1964-10-27

申请号：US12349861

申请日：1961-07-12

Applicant: IBM

Inventor： MARINACE JOHN C , WINOGRADOFF NICHOLAS N

IPC: C09K11/08

CPC classification number: C09K11/0844

15.

发明授权
Method of making crystal shapes having optically related surfaces 失效
Title translation: 制作具有光学相关表面的晶体形状的方法

公开(公告)号：US3457633A

公开(公告)日：1969-07-29

申请号：US3457633D

申请日：1965-12-22

Applicant: IBM

Inventor： MARINACE JOHN C , RUTZ RICHARD F

IPC: H01L21/00 , H01L21/304 , H01L27/146 , H01S5/22 , H01S5/30 , H01S5/40 , H01S5/50 , B01J17/00 , H01L5/00

CPC classification number: H01S5/50 , H01L21/00 , H01L21/3043 , H01L27/14643 , H01S5/22 , H01S5/30 , H01S5/4031 , Y10S257/926 , Y10T225/12

16.

发明授权
Epitaxial semiconductor layer as a diffusion mask 失效
Title translation: 外延半导体层作为扩散掩模

公开(公告)号：US3406049A

公开(公告)日：1968-10-15

申请号：US45158365

申请日：1965-04-28

Applicant: IBM

Inventor： MARINACE JOHN C

IPC: C30B31/18 , H01L21/00

CPC classification number: C30B31/185 , H01L21/00 , Y10S148/043 , Y10S148/065 , Y10S148/106 , Y10S148/122 , Y10S148/145 , Y10S438/945

17.

发明授权
Planar injection laser structure 失效
Title translation: 平面注射激光器结构

公开(公告)号：US3349475A

公开(公告)日：1967-10-31

申请号：US26028463

申请日：1963-02-21

Applicant: IBM

Inventor： MARINACE JOHN C

IPC: H01L21/00 , H01L21/20 , H01L21/78 , H01S5/30 , H01S5/32

CPC classification number: H01S5/32 , H01L21/00 , H01L21/78 , H01S5/30 , Y10S148/05 , Y10S148/115

18.

发明授权
Uniaxial crystal signal device 失效
Title translation: 单轴晶体信号装置

公开(公告)号：US3271631A

公开(公告)日：1966-09-06

申请号：US19312562

申请日：1962-05-08

Applicant: IBM

Inventor： MARINACE JOHN C

IPC: H01L21/00 , H01S3/067 , H01S3/083

CPC classification number: H01S3/067 , H01L21/00 , H01S3/083

19.

发明授权
Vapor deposition process to form a retrograde impurity distribution p-n junction formation wherein the vapor contains both donor and acceptor impurities 失效
Title translation: 气相沉积工艺形成逆向杂质分布p-n结形成，其中蒸气含有供体和受体杂质

公开(公告)号：US3190773A

公开(公告)日：1965-06-22

申请号：US10310361

申请日：1961-04-14

Applicant: IBM

Inventor： ANDERSON RICHARD L , MARINACE JOHN C , O'ROURKE INGHAM MARY J

IPC: C30B25/02 , H01L21/00 , H01L21/205 , H01L29/00

CPC classification number: H01L21/00 , C30B25/02 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L29/00 , Y10S438/925

20.

发明授权
Vapor deposition process wherein the vapor contains both donor and acceptor impurities 失效
Title translation: 气相沉积方法其中蒸气含有供体和受体杂质

公开(公告)号：US3178798A

公开(公告)日：1965-04-20

申请号：US19348062

申请日：1962-05-09

Applicant: IBM

Inventor： MARINACE JOHN C

IPC: C30B25/02 , H01L21/00 , H01L21/205 , H01L27/082 , H01L29/00 , H01L29/06 , H01L29/10 , H01L29/36 , H01L29/73

CPC classification number: H01L29/36 , C30B25/02 , H01L21/00 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L27/082 , H01L29/00 , H01L29/06 , H01L29/10 , H01L29/73 , Y10S438/925 , Y10S438/936

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