Build-up high-aspect ratio opening
    12.
    发明授权

    公开(公告)号:US10111338B2

    公开(公告)日:2018-10-23

    申请号:US15464123

    申请日:2017-03-20

    Abstract: Embodiments herein relate to creating a high-aspect ratio opening in a package. Embodiments may include applying a first laminate layer on a side of a substrate, applying a seed layer to at least part of the laminate layer, building up one or more copper pads on the seed layer, etching the seed layer to expose a portion of the first laminate layer, applying a second laminate layer to fill in around the sides of one or more copper pads, and removing part of the buildup copper pads. Other embodiments may be described and/or claimed.

    Electronic device including a substrate having interconnects

    公开(公告)号:US11348865B2

    公开(公告)日:2022-05-31

    申请号:US16587963

    申请日:2019-09-30

    Abstract: A substrate for an electronic device may include one or more interconnect pockets. Each of the interconnect pockets may be defined by a first pocket wall and a second pocket wall that may extend between the first pocket wall and the second exterior surface of the substrate. The second pocket wall may extend from the first pocket wall at a wall angle that is greater than or equal to 90 degrees. Individual interconnects may be located within respective individual ones of the interconnect pockets.

    Capacitors with nanoislands on conductive plates

    公开(公告)号:US11855125B2

    公开(公告)日:2023-12-26

    申请号:US16560647

    申请日:2019-09-04

    CPC classification number: H01L28/60 H01G4/008 H01G4/1209 H01G4/28 H01L21/4846

    Abstract: Embodiments herein relate to a capacitor device or a manufacturing process flow for creating a capacitor that includes nanoislands within a package. The capacitor a first conductive plate having a first side and a second side opposite the first side and a second conductive plate having a first side and a second side opposite the first side where the first side of the first conductive plate faces the first side of the second conductive plate. A first plurality of nanoislands is distributed on the first side of the first conductive plate and a second plurality of nanoislands is distributed on the first side of the second conductive plate, where the first conductive plate, the second conductive plate, and the first and second pluralities of nanoislands form a capacitor. The nanoislands may be applied to the conductive plates using a sputtering technique.

Patent Agency Ranking