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    VERTICAL PHASE CHANGE BRIDGE MEMORY CELL
    11.
    发明申请
    VERTICAL PHASE CHANGE BRIDGE MEMORY CELL 有权

    公开(公告)号：US20220302377A1

    公开(公告)日：2022-09-22

    申请号：US17207798

    申请日：2021-03-22

    Applicant: International Business Machines Corporation

    Inventor： JUNTAO LI ,  Kangguo Cheng ,  Carl Radens ,  Ruilong Xie

    IPC: H01L45/00 ,  H01L27/24

    Abstract: A semiconductor structure for a vertical phase change memory cell that includes a bottom electrode on a portion of a semiconductor substrate and a pair of vertical phase change bridge elements that are each on a portion of the bottom electrode. The semiconductor structure for the vertical phase change memory cell includes a dielectric material separating the pair of vertical phase change bridge elements and a top electrode over the pair of vertical phase change bridge elements.

    SEMICONDUCTOR MEMORY DEVICE HAVING A VERTICAL ACTIVE REGION
    12.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE HAVING A VERTICAL ACTIVE REGION 审中-公开

    公开(公告)号：US20200091245A1

    公开(公告)日：2020-03-19

    申请号：US16691724

    申请日：2019-11-22

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： JUNTAO LI ,  Kangguo Cheng ,  TAKASHI ANDO ,  DEXIN KONG

    IPC: H01L27/24 ,  H01L45/00

    Abstract: Embodiments of the invention provide a semiconductor memory device. In some embodiments, the device includes a bottom electrode extending in a y-direction relative to top surface of a substrate and a top electrode extending in an x-direction relative to the top surface of the substrate. An active area is located at the cross-section between the bottom electrode and the top electrode and is located on vertical side walls extending in a z-direction of the semiconductor memory device with respect to the top surface of the substrate. An insulating layer is located in the active area in between the top electrode and the bottom electrode.

    CLOSELY PACKED VERTICAL TRANSISTORS WITH REDUCED CONTACT RESISTANCE
    13.
    发明申请
    CLOSELY PACKED VERTICAL TRANSISTORS WITH REDUCED CONTACT RESISTANCE 审中-公开

    公开(公告)号：US20200066882A1

    公开(公告)日：2020-02-27

    申请号：US16666590

    申请日：2019-10-29

    Applicant: International Business Machines Corporation

    Inventor： ZHENXING BI ,  Kangguo Cheng ,  JUNTAO LI ,  PENG XU

    IPC: H01L29/66 ,  H01L23/522 ,  H01L21/768 ,  H01L27/112 ,  H01L27/11582 ,  H01L21/311 ,  H01L29/417 ,  H01L29/78 ,  H01L29/08

    Abstract: A method of forming a semiconductor device and resulting structures having closely packed vertical transistors with reduced contact resistance by forming a semiconductor structure on a doped region of a substrate, the semiconductor structure including a gate formed over a channel region of a semiconductor fin. A liner is formed on the gate and the semiconductor fin, and a dielectric layer is formed on the liner. Portions of the liner are removed to expose a top surface and sidewalls of the semiconductor fin and a sidewall of the dielectric layer. A recessed opening is formed by recessing portions of the liner from the exposed sidewall of the dielectric layer. A top epitaxy region is formed on the exposed portions of the semiconductor fin and dielectric layer such that an extension of the top epitaxy region fills the recessed opening. The top epitaxy region is confined between portions of the liner.

    PHASE CHANGE MEMORY WITH CONCENTRIC RING-SHAPED HEATER
    17.
    发明申请
    PHASE CHANGE MEMORY WITH CONCENTRIC RING-SHAPED HEATER 有权

    公开(公告)号：US20220416161A1

    公开(公告)日：2022-12-29

    申请号：US17358223

    申请日：2021-06-25

    Applicant: International Business Machines Corporation

    Inventor： Kangguo Cheng ,  Carl Radens ,  JUNTAO LI ,  Ruilong Xie ,  Praneet Adusumilli ,  Oscar van der Straten ,  Alexander Reznicek

    IPC: H01L45/00

    Abstract: A ring-shaped heater, system, and method to gradually change the conductance of the phase change memory through a concentric ring-shaped heater. The system may include a phase change memory. The phase change memory may include a bottom electrode. The phase change memory may also include a ring-shaped heater patterned on top of the bottom electrode, the ring-shaped heater including: a plurality of concentric conductive heating layers, and a plurality of insulator spacers, where each insulator spacer separates each conductive heating layer. The phase change memory may also include a phase change material proximately connected to the ring-shaped heater. The phase change memory may also include a top electrode proximately connected to the phase change material.

    PHASE CHANGE MEMORY CELL WITH AN AIRGAP TO ALLOW FOR THE EXPANSION AND RESTRICTION OF THE PCM MATERIAL
    18.
    发明申请
    PHASE CHANGE MEMORY CELL WITH AN AIRGAP TO ALLOW FOR THE EXPANSION AND RESTRICTION OF THE PCM MATERIAL 有权

    公开(公告)号：US20220399493A1

    公开(公告)日：2022-12-15

    申请号：US17303836

    申请日：2021-06-09

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Kangguo Cheng ,  Ruilong Xie ,  Carl Radens ,  JUNTAO LI

    IPC: H01L45/00

    Abstract: A phase change memory (PCM) cell comprising a substrate a first electrode located on the substrate. A phase change material layer located adjacent to the first electrode, wherein a first side of the phase change material layer is in direct contact with the first electrode. A second electrode located adjacent to phase change material layer, wherein the second electrode is in direct contact with a second side of the phase change material layer, wherein the first side and the second side are different sides of the phase change material layer. An airgap is located directly above the phase change material layer, wherein the airgap provides space for the phase change material to expand or restrict.

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