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    MULTI-STATE FIELD EFFECT TRANSISTOR DEVICE
    15.
    发明公开
    MULTI-STATE FIELD EFFECT TRANSISTOR DEVICE 审中-公开

    公开(公告)号：US20230411533A1

    公开(公告)日：2023-12-21

    申请号：US17806952

    申请日：2022-06-15

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Karthik Yogendra ,  Maruf Amin Bhuiyan ,  Kangguo Cheng

    IPC: H01L29/792 ,  H01L29/78

    CPC classification number: H01L29/792 ,  H01L29/7846 ,  H01L29/785

    Abstract: Embodiments of present invention provide a transistor structure. The transistor structure includes a composite channel of multiple channel layers of different materials, wherein the multiple channel layers are separated from each other by an isolation layer and a material of the isolation layer has a bandgap that is wider than bandgaps of the different materials of the multiple channel layers; a charge trapping layer surrounding the composite channel; a gate metal surrounding the charge trapping layer; and source/drain regions at a first and a second end of the composite channel. A method of forming the same is also provided.

    COMPACT MRAM ARCHITECTURE WITH MAGNETIC BOTTOM ELECTRODE
    17.
    发明申请
    COMPACT MRAM ARCHITECTURE WITH MAGNETIC BOTTOM ELECTRODE 有权

    公开(公告)号：US20230074676A1

    公开(公告)日：2023-03-09

    申请号：US17469350

    申请日：2021-09-08

    Applicant: International Business Machines Corporation

    Inventor： Julien Frougier ,  Karthik Yogendra ,  Dimitri Houssameddine ,  Kangguo Cheng ,  Ruilong Xie

    IPC: G11C11/16 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22

    Abstract: An approach for minimizing stack height and reducing resistance of an MRAM (Magnetoresistive random-access memory) is disclosed. The approach leverages an MRAM device with a T shape magnetic bottom electrode. The T shape magnetic bottom electrode u can be made a lower resistance metal such as cobalt. Furthermore, the method of creating the MRAM can include, depositing a low-k dielectric layer, forming bottom electrode via within the low-k dielectric layer, depositing bottom electrode metal liner on the bottom electrode via, depositing bottom electrode magnetic metal on the bottom electrode metal liner, planarizing the bottom electrode magnetic metal, depositing coupling layer and an MRAM stack on the bottom electrode magnetic metal, patterning and etching anisotropically the MRAM stack and depositing in-situ conformal dielectric layer and forming a top contact via on the MRAM stack.

    MRAM device formation with in-situ encapsulation
    20.
    发明授权
    MRAM device formation with in-situ encapsulation 有权

    公开(公告)号：US10833258B1

    公开(公告)日：2020-11-10

    申请号：US16402126

    申请日：2019-05-02

    Applicant: International Business Machines Corporation

    Inventor： Ashim Dutta ,  Chih-Chao Yang ,  Daniel C. Edelstein ,  Karthik Yogendra ,  John C. Arnold

    IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01F41/34 ,  H01L43/10 ,  H01F10/32 ,  G11C11/16

    Abstract: MRAM devices with in-situ encapsulation are provided. In one aspect, a method of forming an MRAM device includes: patterning an MRAM stack disposed on a dielectric into individual memory cell stacks, wherein the MRAM stack includes a bottom electrode, a MTJ, and a top electrode, and wherein the patterning is performed using an intermediate angle IBE landing on the dielectric; removing redeposited metal from the memory cell stacks using a high angle IBE; redepositing the dielectric along the sidewalls of the memory cell stacks using a low angle IBE to form a first layer of dielectric encapsulating the memory cell stacks; and depositing a second layer of dielectric, wherein the first/second layers of dielectric form a bilayer dielectric spacer structure, wherein the patterning, removing of the redeposited metal, and redepositing the dielectric steps are all performed in-situ. An MRAM device is also provided.

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