FIN PATTERNING FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

    公开(公告)号:US20200227413A1

    公开(公告)日:2020-07-16

    申请号:US16647865

    申请日:2017-12-29

    Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of semiconductor fins having a longest dimension along a first direction. Adjacent individual semiconductor fins of the first plurality of semiconductor fins are spaced apart from one another by a first amount in a second direction orthogonal to the first direction. A second plurality of semiconductor fins has a longest dimension along the first direction. Adjacent individual semiconductor fins of the second plurality of semiconductor fins are spaced apart from one another by the first amount in the second direction, and closest semiconductor fins of the first plurality of semiconductor fins and the second plurality of semiconductor fins are spaced apart by a second amount in the second direction

    GATE LINE PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

    公开(公告)号:US20190165147A1

    公开(公告)日:2019-05-30

    申请号:US16170840

    申请日:2018-10-25

    Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first silicon fin having a longest dimension along a first direction. A second silicon fin having a longest dimension is along the first direction. An insulator material is between the first silicon fin and the second silicon fin. A gate line is over the first silicon fin and over the second silicon fin along a second direction, the second direction orthogonal to the first direction, the gate line having a first side and a second side, wherein the gate line has a discontinuity over the insulator material, the discontinuity filled by a dielectric plug.

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