Capacitors with nanoislands on conductive plates

    公开(公告)号:US11855125B2

    公开(公告)日:2023-12-26

    申请号:US16560647

    申请日:2019-09-04

    CPC classification number: H01L28/60 H01G4/008 H01G4/1209 H01G4/28 H01L21/4846

    Abstract: Embodiments herein relate to a capacitor device or a manufacturing process flow for creating a capacitor that includes nanoislands within a package. The capacitor a first conductive plate having a first side and a second side opposite the first side and a second conductive plate having a first side and a second side opposite the first side where the first side of the first conductive plate faces the first side of the second conductive plate. A first plurality of nanoislands is distributed on the first side of the first conductive plate and a second plurality of nanoislands is distributed on the first side of the second conductive plate, where the first conductive plate, the second conductive plate, and the first and second pluralities of nanoislands form a capacitor. The nanoislands may be applied to the conductive plates using a sputtering technique.

    MAGNETO-OPTICAL KERR EFFECT INTERCONNECTS FOR PHOTONIC PACKAGING

    公开(公告)号:US20220413233A1

    公开(公告)日:2022-12-29

    申请号:US17357788

    申请日:2021-06-24

    Abstract: An optical package comprising an optical die that is electrically coupled to a package substrate, and an optical interconnect adjacent the optical die. The optical interconnect comprises a first polarizing filter adjacent to a first lens, a second polarizing filter adjacent to a second lens; and a film comprising a magnetic material between the first polarizing filter and the second polarizing filter. The second polarizing filter is rotated with respect to the first polarizing filter and the magnetic material is to rotate a polarization vector of light incoming to the optical interconnect. An optical fiber interface port is immediately adjacent to the first lens. The second lens is immediately adjacent to an optical interface of the optical die.

    Polarization defined zero misalignment vias for semiconductor packaging

    公开(公告)号:US11264239B2

    公开(公告)日:2022-03-01

    申请号:US16535618

    申请日:2019-08-08

    Abstract: Techniques that can assist with fabricating a semiconductor package that includes a zero misalignment-via (ZMV) and/or a trace formed using a polarization process are described. The disclosed techniques can result in creation of ZMVs and/or traces between the ZMVs using a process comprising application of polarized light to one or more resist layers (e.g., a photoresist layer, etc.). One embodiment of a technique includes modulating an intensity of light applied to one or more resist layers by interaction of a light source with a photomask and at least one polarizer such that one or more patterns are created on the one or more resist layers. One embodiment of another technique includes creating patterns on one or more resist layers with different types of polarized light formed from a photomask and at least one polarizer. The disclosed techniques can assist with reducing manufacturing costs, reducing development time, and increasing I/O density.

    INTERCONNECT STACK WITH LOW-K DIELECTRIC

    公开(公告)号:US20210287979A1

    公开(公告)日:2021-09-16

    申请号:US16817309

    申请日:2020-03-12

    Abstract: Embodiments may relate to a microelectronic package with an interconnect stack that includes a cavity therein. The cavity may include a dielectric material with a dielectric value less than 3.9. The microelectronic package may further include first and second conductive elements in the cavity, with the dielectric material positioned therebetween. Other embodiments may be described or claimed.

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