Semiconductor package with cavity

    公开(公告)号:US10410940B2

    公开(公告)日:2019-09-10

    申请号:US15639077

    申请日:2017-06-30

    申请人: Intel Corporation

    摘要: An embodiment includes a method comprising: coupling a sacrificial material to a substrate; forming a first dielectric material adjacent the sacrificial material such that a horizontal axis intersects the first dielectric material and the sacrificial material; forming a first layer, on the first dielectric material and the sacrificial material, which includes a first metal interconnect and a third dielectric material; decoupling the substrate from the first dielectric material and the sacrificial material; removing the sacrificial material to form an empty cavity with sidewalls comprising the first dielectric material; after removing the sacrificial material to form the empty cavity, inserting a first die into the empty cavity; and forming a second dielectric material between the first dielectric material and the first die such that the horizontal axis intersects the first and second dielectric materials and the first die. Other embodiments are described herein.

    Electronic device package including a capacitor

    公开(公告)号:US10923443B2

    公开(公告)日:2021-02-16

    申请号:US16369708

    申请日:2019-03-29

    申请人: Intel Corporation

    摘要: A substrate for an electronic device may include a first layer, a second layer, and may include a third layer. The first layer may include a capacitive material, and the capacitive material may be segmented into a first section, and a second section. Each of the first section and the second section may include a first surface and a second surface. The second layer may include a first conductor. The third layer may include a second conductor. The first surface of the second section of capacitive material may be directly coupled to the first conductor. The second surface of the second section of the capacitive material may be directly coupled to the second conductor. A first filler region may include a dielectric material and the first filler region may be located in a first gap between the first section of capacitive material and the second section of capacitive material.

    Semiconductor Package with Cavity
    4.
    发明申请

    公开(公告)号:US20190006252A1

    公开(公告)日:2019-01-03

    申请号:US15639077

    申请日:2017-06-30

    申请人: Intel Corporation

    摘要: An embodiment includes a method comprising: coupling a sacrificial material to a substrate; forming a first dielectric material adjacent the sacrificial material such that a horizontal axis intersects the first dielectric material and the sacrificial material; forming a first layer, on the first dielectric material and the sacrificial material, which includes a first metal interconnect and a third dielectric material; decoupling the substrate from the first dielectric material and the sacrificial material; removing the sacrificial material to form an empty cavity with sidewalls comprising the first dielectric material; after removing the sacrificial material to form the empty cavity, inserting a first die into the empty cavity; and forming a second dielectric material between the first dielectric material and the first die such that the horizontal axis intersects the first and second dielectric materials and the first die. Other embodiments are described herein.